Irgb4055Pbf: PDP Trench Igbt
Irgb4055Pbf: PDP Trench Igbt
Irgb4055Pbf: PDP Trench Igbt
IRGB4055PbF
Key Parameters
300 1.70 270 150 V V A C
VCE min VCE(ON) typ. @ 110A IRP max @ TC= 25C c TJ max
G E
n-channel
TO-220AB
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
Max.
30 110 60 270 255 102 2.04 -40 to + 150 300 10lbxin (1.1Nxm)
Units
V A
W W/C C
Thermal Resistance
Parameter
RJC Junction-to-Case d
Typ.
Max.
0.49
Units
C/W
www.irf.com
1
10/13/05
IRGB4055PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVCES VCES/TJ VCE(on) VGE(th) VGE(th)/TJ ICES IGES gfe Qg Qgc tst EPULSE Collector-to-Emitter Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Collector-to-Emitter Voltage Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Shoot Through Blocking Time Energy per Pulse
Conditions
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance
V VGE = 0V, ICE = 1 mA V/C Reference to 25C, ICE = 1mA 1.30 V VGE = 15V, ICE = 35A e 2.10 V VGE = 15V, ICE = 110A e V VGE = 15V, ICE = 200A e V VGE = 15V, ICE = 110A, TJ = 150C 5.0 V VCE = VGE, ICE = 1mA mV/C 25 A VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 150C 100 nA VGE = 30V VGE = -30V -100 V S CE = 25V, ICE = 35A V nC CE = 200V, IC = 35A, VGE = 15Ve ns VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V J VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 100C VGE = 0V pF VCE = 30V = 1.0MHz, See Fig.13 Between lead, nH 6mm (0.25in.) from package and center of die contact
Notes: Half sine wave with duty cycle = 0.25, ton=1sec. R is measured at TJ of approximately 90C. Pulse width 400s; duty cycle 2%.
www.irf.com
IRGB4055PbF
200
Top V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE
200
Top V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE
150
Bottom
150
Bottom
ICE (A)
ICE (A)
100
100
50
50
150
Bottom
150
Bottom
ICE (A)
ICE (A)
100
100
50
50
IC = 35A
T J = 150C
V CE (V)
15 TJ = 25C TJ = 150C
10
www.irf.com
IRGB4055PbF
120 100
IC, Collector Current (A)
300 280
Limited By Package
Repetitive Peak Current (A)
25
50
75
100
125
150
800 700 600 25C 500 400 300 160 170 180 190 200 210 220 230 100C
100C 600 500 25C 400 300 200 150 160 170 180 190 200 210 220 230 240 V CE, Collector-to-Emitter Voltage (V)
C= 0.4F
100
800 C= 0.3F 600 C= 0.2F 400
1sec 10sec
IC (A)
100sec
10
www.irf.com
IRGB4055PbF
100000 VGS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc C oes = C ce + C gc
16 14 12 10 8 6 4 2 0 IC = 30A IC = 35A
10000
Capacitance (pF)
Cies
1000
100
Coes Cres
25
50
75
100
125
150
V CE, Collector-toEmitter-Voltage(V)
1 D = 0.50
Thermal Response ( Z thJC )
0.1
0.01
0.001
0.0001 1E-006
1E-005
0.0001
www.irf.com
IRGB4055PbF
RG
DRIVER L
PULSE A
VCC
B
PULSE B
RG
Ipulse DUT
tST
VCE
Energy IC Current
0
L DUT 1K VCC
www.irf.com
IRGB4055PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB package is not recommended for Surface Mount Application. The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and procedures, which by their nature do not include qualification to all possible or even all widely used applications. Without limitation, we have not qualified our product for medical use or applications involving hi-reliability applications. Customers are encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information.
Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/05
www.irf.com