Irgb 4064 DPBF

PD - 97113
IRGB4064DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
Features
Low VCE (on) Trench IGBT Technology

Low Switching Losses
Maximum Junction temperature 175 C
5s SCSOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free Package
IC = 10A, TC = 100C
G
tsc > 5s, Tjmax = 175C

E
VCE(on) typ. = 1.6V
n-channel
C
Benefits
High Efficiency in a Wide Range of Applications

Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
E
G
TO-220AB
Gate
Collector
Emitter
Absolute Maximum Ratings

Parameter
VCES
IC@ TC = 25C
IC@ TC = 100C
ICM
ILM
IF@TC=25C
IF@TC=100C
IFM
VGE
PD @ TC =25
PD @ TC =100
TJ
TSTG
Max.
Collector-to-Emitter Breakdown Voltage

Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current c
Units
600
20
10
40
40
20
10
40
20
30
101
50
Diode Continuous Forward Current

Diode Continuous Forward Current
Diode Maximum Forward Current d
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 Screw
V
W
C
-55 to + 175
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Thermal Resistance
Parameter
RJC
RJC
RCS
RJA
Wt
Junction-to-Case - IGBT e
Junction-to-Case - Diode e
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount e
Weight
Min.
Typ.
Max.
Units
0.50
1.44
1.49
3.66
62
C/W
g
www.irf.com
11/28/06
IRGB4064DPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V(BR)CES/TJ
Temperature Coeff. of Breakdown Voltage
0.47
1.6
1.91
VCE(on)
Collector-to-Emitter Saturation Voltage
1.9
2.0
Conditions
VGE = 0V, IC = 100A
IC = 10A, VGE = 15V, TJ = 25C

V
5,6,7,9,
IC = 10A, VGE = 15V, TJ = 175C
10 ,11
4.0
6.5
VGE(th)/TJ
Threshold Voltage temp. coefficient
-11
gfe
Forward Transconductance
6.9
VCE = 50V, IC = 10A, PW = 80s
ICES
Collector-to-Emitter Leakage Current
25
VGE = 0V, VCE = 600V
328
2.5
3.1
IF = 10A
1.7
100
nA
VGE = 20V
IGES
Gate-to-Emitter Leakage Current
IC = 10A, VGE = 15V, TJ = 150C
Gate Threshold Voltage
Diode Forward Voltage Drop
CT6
V/C VGE = 0V, IC = 500A (-55C-175C)
VGE(th)
VFM
Ref.Fig
VCE = VGE, IC = 275A
9,10,11,12
mV/C VCE = VGE, IC = 1.0mA (25C - 175C)
VGE = 0V, VCE = 600V, TJ = 175C
IF = 10A, TJ = 175C
Switching Characteristics @ TJ = 25C (unless otherwise specified)

Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge (turn-on)
21
32
Qge
Gate-to-Emitter Charge (turn-on)
5.3
8.0
Qgc
Gate-to-Collector Charge (turn-on)
8.9
13
Conditions
Ref.Fig
IC = 10A
nC
24
VGE = 15V
CT1
VCC = 400V
Eon
Turn-On Switching Loss
29
71
Eoff
Turn-Off Switching Loss
200
308
Etotal
Total Switching Loss
229
339
td(on)
Turn-On delay time
27
37
tr
Rise time
15
23
td(off)
Turn-Off delay time
79
90
tf
Fall time
21
30
Eon
Turn-On Switching Loss
99
Eoff
Turn-Off Switching Loss
316
Etotal
Total Switching Loss
415
Energy losses include tail & diode reverse recovery
td(on)
Turn-On delay time
27
IC = 10A, VCC = 400V, VGE = 15V
tr
Rise time
16
td(off)
Turn-Off delay time
98
IC = 10A, VCC = 400V, VGE = 15V

J
RG = 22, L = 1.0mH, TJ = 25C
CT4
Energy losses include tail & diode reverse recovery
IC = 10A, VCC = 400V, VGE = 15V

ns
RG = 22, L = 1.0mH, TJ = 25C
CT4
IC = 10A, VCC = 400V, VGE = 15V
13,15
RG=22, L=1.0mH, TJ = 175C
CT4
ns
f
RG = 22, L = 1.0mH, TJ = 175C
WF1,WF2
14,16
CT4
WF1,WF2
tf
Fall time
33
Cies
Input Capacitance
594
Coes
Output Capacitance
49
VCC = 30V
Cres
Reverse Transfer Capacitance
17
f = 1.0Mhz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
VCC = 400V, Vp =600V
Erec
Reverse Recovery Energy of the Diode
191
TJ = 175C
trr
Diode Reverse Recovery Time
62
ns
VCC = 400V, IF = 10A
20,21
Irr
Peak Reverse Recovery Current
16
VGE = 15V, Rg = 22, L=1.0mH
WF3
pF
VGE = 0V
TJ = 175C, IC = 40A
VCC = 480V, Vp =600V
22
4
CT2
Rg = 22, VGE = +15V to 0V

Rg = 22, VGE = +15V to 0V
22, CT3
WF4
17,18,19
Notes:
VCC = 80% (VCES), VGE = 15V, L = 28 H, RG = 22 .
Pulse width limited by max. junction temperature.
R is measured at TJ approximately 90C
Refer to AN-1086 for guidelines for measuring V(BR)CES safely
www.irf.com
24
120
20
100
16
80
Ptot (W)
IC (A)
IRGB4064DPbF
12
60
40
20
0
0
20
40
60
80 100 120 140 160 180
20
40
60
80 100 120 140 160 180
TC (C)
TC (C)
Fig. 1 - Maximum DC Collector Current vs.

Case Temperature
Fig. 2 - Power Dissipation vs. Case

Temperature
100
100
10sec
100sec
10
IC A)
IC (A)
1msec
DC
10
1
Tc = 25C
Tj = 175C
Single Pulse
1
0.1
1
10
100
10
1000
100
VCE (V)
VCE (V)
Fig. 4 - Reverse Bias SOA

TJ = 175C; VCE = 15V
Fig. 3 - Forward SOA,

TC = 25C; TJ 175C
40
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
10
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
10
0
0
10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40C; tp = 80s
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VGE = 18V
30
ICE (A)
ICE (A)
40
VGE = 18V
30
1000
10
VCE (V)

TJ = 25C; tp = 80s
IRGB4064DPbF
40
80
VGE = 18V
VGE = 12V
60
VGE = 8.0V
50
VGE = 10V
IF (A)
ICE (A)
30
-40C
25C
175C
70
VGE = 15V
20
40
30
10
20
10
0
0
10
0.0
1.0
2.0
3.0
VCE (V)
20
18
18
16
16
ICE = 5.0A
VCE (V)
VCE (V)
ICE = 20A
ICE = 10A
12
ICE = 20A
10
8
2
0
0
5
10
15
20
10
15
20
VGE (V)
VGE (V)
Fig. 9 - Typical VCE vs. VGE

TJ = -40C

TJ = 25C
20
40
18
16
TJ = 25C
TJ = 175C
30
ICE = 5.0A
14
ICE = 10A
12
ICE = 20A
10
ICE (A)
VCE (V)
7.0
ICE = 5.0A
14
ICE = 10A
10
6.0
Fig. 8 - Typ. Diode Forward Characteristics

tp = 80s
20
12
5.0
VF (V)

TJ = 175C; tp = 80s
14
4.0
8
6
20
10
4
2
0
0
5
10
15
VGE (V)

TJ = 175C
20
10
15
20
VGE (V)
Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10s
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IRGB4064DPbF
1000
600
Swiching Time (ns)
500
Energy (J)
400
EOFF
300
200
tdOFF
100
tF
tdON
tR
10
EON
100
0
0
12
16
20
24
12
I C (A)
20
24
IC (A)
Fig. 14 - Typ. Switching Time vs. IC

TJ = 175C; L=1mH; VCE= 400V
RG= 22; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC

TJ = 175C; L = 1mH; VCE = 400V, RG = 22; VGE = 15V.
350
1000
EOFF
300
16
Swiching Time (ns)
Energy (J)
250
EON
200
150
100
tdOFF
100
tdON
tF
50
tR
0
0
25
50
75
100
10
125
25
50
RG ()
125
Fig. 16- Typ. Switching Time vs. RG

TJ = 175C; L=1mH; VCE= 400V
ICE= 10A; VGE= 15V
24
20
20
16
RG =10
16
RG =22
12
IRR (A)
IRR (A)
100
RG ()
Fig. 15 - Typ. Energy Loss vs. RG

TJ = 175C; L = 1mH; VCE = 400V, ICE = 10A; VGE = 15V
RG =47
12
RG = 100
4
0
0
12
16
20
IF (A)
Fig. 17 - Typical Diode IRR vs. IF

TJ = 175C
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75
24
25
50
75
100
125
RG ()
Fig. 18 - Typical Diode IRR vs. RG

TJ = 175C; IF = 10A
IRGB4064DPbF
20
900
10
20A
22
800
47
15
IRR (A)
QRR (nC)
700
10
100
10A
600
500
5.0A
400
300
0
200
400
600
800
1000
1200
500
diF /dt (A/s)
1500
Fig. 20 - Typical Diode QRR

VCC= 400V; VGE= 15V; TJ = 175C
Fig. 19- Typical Diode IRR vs. diF/dt

VCC= 400V; VGE= 15V;
ICE= 10A; TJ = 175C
80
16
300
RG = 10
RG = 22
150
RG = 47
100
RG = 100
50
70
Isc
12
60
10
50
40
30
20
10
0
0
0
8 10 12 14 16 18 20 22
Current (A)
200
Tsc
14
Time (s)
250
IRR (A)
1000
diF /dt (A/s)
10
12
14
16
VGE (V)
IF (A)
Fig. 22- Typ. VGE vs Short Circuit Time

VCC=400V, TC =25C
Fig. 21 - Typical Diode ERR vs. IF

TJ = 175C
1000
16
Cies
14
300V
400V
100
VGE (V)
Capacitance (pF)
12
Coes
10
8
6
10
Cres
4
2
0
1
0
20
40
60
VCE (V)
80
Fig. 23- Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz
100
12
16
20
24
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE

ICE = 10A, L=600H
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IRGB4064DPbF
Thermal Response ( Z thJC )
10
D = 0.50
0.20
0.10
0.1
0.05
J
1
R2
R2
R3
R3
R4
R4
C
Ci= i/Ri
Ci i/Ri
0.02
0.01
R1
R1
Ri (C/W) (sec)
0.007362
0
0.342317 0.000048
0.647826 0.000192
0.493231 0.001461
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10
Thermal Response ( Z thJC )
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
R1
R1
J
1
Ci= i/Ri
0.01
R2
R2
2
Ri (C/W)
(sec)
1.939783 0.000975
1.721867 0.006135
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGB4064DPbF
L
L
DUT
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.5 - Resistive Load Circuit
VCC
80 V
+
-
DUT
Rg
480V
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.6 - Typical Filter Circuit for

V(BR)CES Measurement
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IRGB4064DPbF
500
10
TEST CURRENT
tf
25
350
tr
275
90% ICE
VCE (V)
200
ICE (A)
VCE (V)
200
15
125
10
5% ICE
100
10% test current
2
5% VCE
Eoff Loss
0
-0.04
0.06
-25
-0.1
0.16
time(s)
Eon Loss
0.1
110
QRR
tRR
90
70
450
VC
E
Vce (V)
Peak
IRR
IF (A)
VF (V)
-5
375
300
-175
-250
Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 175C using Fig. CT.4
10
-100
time (s)
Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 175C using Fig. CT.4
-25
5% VCE
50
IC
50
225
-10
30
150
-400
-15
10
75
-475
-0.05
-20
-10
-325
0.15
10%
Peak
IRR
0.35
time (S)
WF.3- Typ. Reverse Recovery Waveform
@ TJ = 175C using CT.4
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-5
Ice (A)
300
20
90% test current
ICE (A)
400
10
Time (uS)
WF.4- Typ. Short Circuit Waveform
@ TJ = 25C using CT.3
IRGB4064DPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information

EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 2000
IN THE ASS EMBLY LINE "C"
Note: "P" in as s embly line pos ition
indicates "Lead - Free"
PART NUMBER
INT ERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 0 = 2000
WEEK 19
LINE C
AS S EMBLY
LOT CODE
TO-220AB packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/06
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/

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PD - 97113

Low VCE (on) Trench IGBT Technology

tsc > 5s, Tjmax = 175C

VCE(on) typ. = 1.6V

High Efficiency in a Wide Range of Applications

Absolute Maximum Ratings

Collector-to-Emitter Breakdown Voltage

Diode Continuous Forward Current

Min. Typ. Max. Units

Collector-to-Emitter Breakdown Voltage

Temperature Coeff. of Breakdown Voltage

Collector-to-Emitter Saturation Voltage

IC = 10A, VGE = 15V, TJ = 25C

IC = 10A, VGE = 15V, TJ = 175C

Threshold Voltage temp. coefficient

VCE = 50V, IC = 10A, PW = 80s

Collector-to-Emitter Leakage Current

VGE = 0V, VCE = 600V

Gate-to-Emitter Leakage Current

IC = 10A, VGE = 15V, TJ = 150C

Gate Threshold Voltage

Diode Forward Voltage Drop

V/C VGE = 0V, IC = 500A (-55C-175C)

VCE = VGE, IC = 275A

mV/C VCE = VGE, IC = 1.0mA (25C - 175C)

VGE = 0V, VCE = 600V, TJ = 175C

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Min. Typ. Max. Units

Total Gate Charge (turn-on)

Gate-to-Emitter Charge (turn-on)

Gate-to-Collector Charge (turn-on)

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On delay time

Turn-Off delay time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Energy losses include tail & diode reverse recovery

Turn-On delay time

IC = 10A, VCC = 400V, VGE = 15V

Turn-Off delay time

IC = 10A, VCC = 400V, VGE = 15V

RG = 22, L = 1.0mH, TJ = 25C

Energy losses include tail & diode reverse recovery

IC = 10A, VCC = 400V, VGE = 15V

RG = 22, L = 1.0mH, TJ = 25C

IC = 10A, VCC = 400V, VGE = 15V

RG=22, L=1.0mH, TJ = 175C

RG = 22, L = 1.0mH, TJ = 175C

Reverse Transfer Capacitance

Reverse Bias Safe Operating Area

Short Circuit Safe Operating Area

VCC = 400V, Vp =600V

Reverse Recovery Energy of the Diode

Diode Reverse Recovery Time

VCC = 400V, IF = 10A