TRENCHSTOP Series

IKW50N60T
q

Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode

Features:

Very low VCE(sat) 1.5V (typ.)

Maximum Junction Temperature 175C

Short circuit withstand time 5s

Designed for :
- Frequency Converters
- Uninterrupted Power Supply

TRENCHSTOP and Fieldstop technology for 600V applications offers :

- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed

Positive temperature coefficient in VCE(sat)

Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel Emitter Controlled HE diode

Qualified according to JEDEC1 for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type
IKW50N60T

PG-TO247-3

VCE

IC

VCE(sat),Tj=25C

Tj,max

Marking

Package

600V

50A

1.5V

175C

K50T60

PG-TO247-3

Maximum Ratings
Parameter

Symbol

Value

Collector-emitter voltage, Tj 25C

VCE

600

IC

80

Unit
V

DC collector current, limited by Tjmax

TC = 25C

2)

50

TC = 100C
Pulsed collector current, tp limited by Tjmax

ICpuls

150

Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1s

150

IF

100

Diode forward current, limited by Tjmax

TC = 25C

50

TC = 100C
Diode pulsed current, tp limited by Tjmax

IFpuls

150

Gate-emitter voltage

VGE

20

tSC

Power dissipation TC = 25C

Ptot

333

Operating junction temperature

Tj

-40...+175

Storage temperature

Tstg

-55...+150

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

3)

Short circuit withstand time

VGE = 15V, VCC 400V, Tj 150C

260

J-STD-020 and JESD-022

Value limited by bond wire
3)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)

IFAG IPC TD VLS

Rev. 2.6 20.09.2013

TRENCHSTOP Series

IKW50N60T
q

Thermal Resistance
Parameter

Symbol

Conditions

Max. Value

Unit

RthJC

0.45

K/W

RthJCD

0.8

RthJA

40

Characteristic
IGBT thermal resistance,
junction case
Diode thermal resistance,
junction case
Thermal resistance,
junction ambient
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter

Symbol

Conditions

Value
min.

Typ.

max.

600

T j =2 5 C

1.5

T j =1 7 5 C

1.9

T j =2 5 C

1.65

2.05

T j =1 7 5 C

1.6

4.1

4.9

5.7

Unit

Static Characteristic
Collector-emitter breakdown voltage

V ( B R ) C E S V G E = 0V , I C = 0 .2m A

Collector-emitter saturation voltage

VCE(sat)

VF

Diode forward voltage

V G E = 15 V , I C = 50 A

V G E = 0V , I F = 5 0 A

Gate-emitter threshold voltage

VGE(th)

I C = 0. 8m A, V C E = V G E

Zero gate voltage collector current

ICES

V C E = 60 0 V ,
V G E = 0V

T j =2 5 C

40

T j =1 7 5 C

3500

Gate-emitter leakage current

IGES

V C E = 0V , V G E =2 0 V

100

nA

Transconductance

gfs

V C E = 20 V , I C = 50 A

31

Integrated gate resistor

RGint

Dynamic Characteristic
Input capacitance

Ciss

V C E = 25 V ,

3140

Output capacitance

Coss

V G E = 0V ,

200

Reverse transfer capacitance

Crss

f= 1 MH z

93

Gate charge

QGate

V C C = 48 0 V, I C =5 0 A

310

nC

13

nH

458.3

pF

V G E = 15 V
LE

Internal emitter inductance

measured 5mm (0.197 in.) from case
Short circuit collector current

1)

1)

IC(SC)

V G E = 15 V ,t S C 5 s
V C C = 4 0 0 V,
T j 1 50 C

Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS

Rev. 2.6 20.09.2013

TRENCHSTOP Series

IKW50N60T
q

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter

Symbol

Conditions

Value
min.

Typ.

max.

26

29

299

29

1.2

1.4

2.6

Unit

IGBT Characteristic
Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

T j=25 C,
VCC=400V,IC=50A,
VGE=0/15V,rG=7,
L =103nH,C=39pF
L , C f rom Fig. E
Energy losses include
tail and diode reverse
recovery.

ns

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

T j =2 5 C ,

143

ns

Diode reverse recovery charge

Qrr

V R = 4 00 V , I F = 5 0 A,

1.8

Diode peak reverse recovery current

Irrm

d i F / d t =1 2 80 A / s

27.7

Diode peak rate of fall of reverse

recovery current during t b

d i r r /d t

671

A/s

Switching Characteristic, Inductive Load, at Tj=175 C

Parameter

Symbol

Conditions

Value
min.

Typ.

max.

27

33

341

55

1.8

1.8

3.6

Unit

IGBT Characteristic
Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

T j=175 C,
VCC=400V,IC=50A,
VGE=0/15V,rG=7,
L =103nH,C=39pF
L , C f rom Fig. E
Energy losses include
tail and diode reverse
recovery.

ns

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

T j =1 7 5 C

205

ns

Diode reverse recovery charge

Qrr

V R = 4 00 V , I F = 5 0 A,

4.3

Diode peak reverse recovery current

Irrm

d i F / d t =1 2 80 A / s

40.7

Diode peak rate of fall of reverse

recovery current during t b

d i r r /d t

449

A/s

IFAG IPC TD VLS

Rev. 2.6 20.09.2013

TRENCHSTOP Series

140A

IKW50N60T
q
t p=2s

100A

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

120A
100A
T C =80C
80A
T C =110C
60A
40A
20A
0A
100H z

Ic
Ic

10s

10A

50s

1ms
DC

1A

1kH z

10kHz

100kH z

1V

f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 7)

10V

100V

10ms

1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)

300W

IC, COLLECTOR CURRENT

Ptot, POWER DISSIPATION

80A
250W

200W

150W

100W

60A

40A

20A

50W

0W
25C

50C

75C

0A
25C

100C 125C 150C

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of
case temperature
(Tj 175C)

IFAG IPC TD VLS

75C

125C

TC, CASE TEMPERATURE

Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 175C)

Rev. 2.6 20.09.2013

TRENCHSTOP Series

120A
V G E =20V

100A

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

120A

15V
13V

80A

11V
9V

60A

7V
40A
20A

100A

V G E =20V
15V
13V

80A

11V
60A

9V
7V

40A
20A

0A
0V

1V

2V

0A

3V

0V

80 A

60 A

40 A

T J = 17 5 C

20 A

2 5 C
0A
0V

2V

4V

6V

2V

3V

2.5V

4V

IC =100A

2.0V
IC =50A

1.5V

IC =25A

1.0V

0.5V

0.0V
0C

8V

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic
(VCE=10V)

IFAG IPC TD VLS

1V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristic
(Tj = 175C)

VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic
(Tj = 25C)

IC, COLLECTOR CURRENT

IKW50N60T
q

50C

100C

150C

TJ, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)

Rev. 2.6 20.09.2013

TRENCHSTOP Series

IKW50N60T
q

t d(off)

100ns

t, SWITCHING TIMES

t, SWITCHING TIMES

t d(off)

tr

tf

t d(on)

100ns

tf

tr

t d(on )

10ns

10ns

0A

20A

40 A

60A

80 A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175C,
VCE = 400V, VGE = 0/15V, rG = 7,
Dynamic test circuit in Figure E)

RG, GATE RESISTOR

Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175C,
VCE= 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)

t, SWITCHING TIMES

t d (off)

100n s
tf
tr

t d(on)

10 ns
25C

50 C

75C

6V
m ax.
typ.

5V
4V

m in.

3V
2V
1V
0V
-50C

100C 12 5C 150C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 50A, rG=7,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS

VGE(th), GATE-EMITT TRSHOLD VOLTAGE

7V

0C

50C

100C

150C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.8mA)

Rev. 2.6 20.09.2013

TRENCHSTOP Series

*) Eon and Ets include losses

due to diode recovery

*) E on a nd E ts in clu d e lo ss e s

Ets*

Eon*

4.0mJ
Eoff
2.0mJ

E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

d u e to d io d e rec o v e ry

6 .0m J

8.0mJ

6.0mJ

E ts *
5 .0m J

4 .0m J

3 .0m J
E off
2 .0m J
E on *

1 .0m J

0 .0m J

0.0mJ
0A

20A

40A

60A

80A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175C,
VCE = 400V, VGE = 0/15V, rG = 7,
Dynamic test circuit in Figure E)

2.0mJ
Eoff

Eon*

75C

4m J

E on *

3m J
E ts *
2m J

E off
1m J

0m J
300V

100C 125C 150C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 50A, rG = 7,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS

E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

due to diode recovery

3.0mJ

50C

*) E on and E ts include losses

Ets*

0.0mJ
25C

RG, GATE RESISTOR

Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175C,
VCE = 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)

*) Eon and Ets include losses

due to diode recovery

1.0mJ

IKW50N60T
q

350V

400V

450V

500V

550V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175C,
VGE = 0/15V, IC = 50A, rG = 7,
Dynamic test circuit in Figure E)

Rev. 2.6 20.09.2013

TRENCHSTOP Series

IKW50N60T
q

VGE, GATE-EMITTER VOLTAGE

C iss
15V

c, CAPACITANCE

1nF
120V
480V

10V

C oss
100pF

5V

C rss
0V
0nC

100nC

200nC

0V

300nC

QGE, GATE CHARGE

Figure 17. Typical gate charge
(IC=50 A)

10V

20V

30V

40V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)

tSC, SHORT CIRCUIT WITHSTAND TIME

IC(sc), short circuit COLLECTOR CURRENT

12s

800A
700A
600A
500A
400A
300A
200A
100A
0A
12V

14V

16V

8s

6s

4s

2s

0s
10V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE 400V, Tj 150C)

IFAG IPC TD VLS

10s

11V

12V

13V

14V

VGE, GATE-EMITETR VOLTAGE

Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25C,
TJmax<150C)

Rev. 2.6 20.09.2013

TRENCHSTOP Series

IKW50N60T
q

10 K/W
D=0.5

0.2

-1

10 K/W

0.1
R,(K/W)
0.18355
0.12996
0.09205
0.03736
0.00703

0.05

0.02

-2

10 K/W

, (s)
7.425*10-2
8.34*10-3
7.235*10-4
1.035*10-4
4.45*10-5

R1

R2

0.01
C 1 = 1 /R 1

C 2 = 2 /R 2

ZthJC, TRANSIENT THERMAL IMPEDANCE

ZthJC, TRANSIENT THERMAL IMPEDANCE

D=0.5

0.2
-1

10 K/W

0.05
0.02

10s 100s

1ms

6.53*10

R2

0.01

-2

10 K/W

10ms 100ms

C1= 1/ R1

1s

C 2 = 2 /R 2

10s 100s

1ms

10ms 100ms

tP, PULSE WIDTH

Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)

4.0C

300ns

Qrr, REVERSE RECOVERY CHARGE

TJ=175C

trr, REVERSE RECOVERY TIME

, (s)
7.037*10-2
7.312*10-3
6.431*10-4
4.79*10-5

single pulse

tP, PULSE WIDTH

Figure 21. IGBT transient thermal
impedance
(D = tp / T)

250ns
200ns
150ns
TJ=25C
100ns
50ns
0ns
700A/s

R,(K/W)
0.2441
0.2007
0.1673
0.1879
R1

single pulse
1s

0.1

T J =175C
3.5C
3.0C
2.5C
2.0C
1.5C
T J=25C
1.0C
0.5C
0.0C
700A/s

800A/s

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=50A,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS

800A/s

900A/s

1000A/s

900A/s 1000A/s

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 50A,
Dynamic test circuit in Figure E)

Rev. 2.6 20.09.2013

TRENCHSTOP Series

T J =175C

-750A/s

dirr/dt, DIODE PEAK RATE OF FALL

OF REVERSE RECOVERY CURRENT

Irr, REVERSE RECOVERY CURRENT

40A

30A
T J =25C

20A

10A

800A/s

900A/s

1000A/s

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 50A,
Dynamic test circuit in Figure E)

-600A/s

-450A/s

T J=175C
-300A/s

-150A/s

800A/s

900A/s

I F =100A

VF, FORWARD VOLTAGE

2.0V

100A

T J =25C
175C

80A
60A
40A

1000A/s

diF/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=50A,
Dynamic test circuit in Figure E)

120A

IF, FORWARD CURRENT

T J=25C

0A/s
700A/s

0A
700A/s

IKW50N60T
q

50A

1.5V

25A
1.0V

0.5V
20A

0.0V
0C

0A
0V

1V

2V

VF, FORWARD VOLTAGE

Figure 27. Typical diode forward current as
a function of forward voltage

IFAG IPC TD VLS

10

50C

100C

150C

TJ, JUNCTION TEMPERATURE

Figure 28. Typical diode forward voltage as a
function of junction temperature

Rev. 2.6 20.09.2013

TRENCHSTOP Series

IFAG IPC TD VLS

11

IKW50N60T
q

Rev. 2.6 20.09.2013

TRENCHSTOP Series

IKW50N60T
q

i,v
tr r =tS +tF

diF /dt

Qr r =QS +QF
tr r
IF

tS
QS

Ir r m

tF

QF

10% Ir r m

dir r /dt
90% Ir r m

t
VR

Figure C. Definition of diodes

switching characteristics
1

r1

r2

rn

Tj (t)
p(t)

r1

r2

rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

IFAG IPC TD VLS

12

Rev. 2.6 20.09.2013

TRENCHSTOP Series

IKW50N60T
q

Published by
Infineon Technologies AG
81726 Munich, Germany
2013 Infineon Technologies AG
All Rights Reserved.

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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
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human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.

IFAG IPC TD VLS

13

Rev. 2.6 20.09.2013