TrenchStop Series Low Loss DuoPack :

IKA15N60T q

IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C

Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

P-TO-220-3-31 (TO-220 FullPak)

Applications: Air Condition Inverters Type IKA15N60T VCE 600V IC 15A VCE(sat),Tj=25C 1.5V Tj,max 175C Marking Code K15T60 Package P-TO-220-3-31

Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 600V, Tj 175C) Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time
2)

Symbol VCE IC

Value 600 14.7 8.9

Unit V A

ICpul s IF

45 45 15.5 9

IFpul s VGE tSC Ptot Tj Tstg

45 20 5 35.7 -40...+175 -55...+175 260 V s W C

VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Solder temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Isolation Voltage

Visol

2500

Vr m s

1 2)

J-STD-020 and JESD-022 Allowed number of short circuits:

<1000; time between short circuits: >1s.

Power Semiconductors

Rev. 2.1 July 06

TrenchStop Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A VCE(sat) V G E = 15 V , I C = 15 A T j =2 5 C T j =1 7 5 C Diode forward voltage VF V G E = 0V , I F = 1 5 A T j =2 5 C T j =1 7 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 21 0 A , V C E = V G E V C E = 60 0 V , V G E = 0V T j =2 5 C T j =1 7 5 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)

IKA15N60T q
Max. Value 4.2 4.8 80 Unit K/W

Symbol RthJC RthJCD RthJA

Conditions

Symbol

Conditions

Value min. 600 4.1 Typ. 1.5 1.9 1.65 1.6 4.9 max. 2.05 2.05 5.7

Unit

A 8.7 40 1000 100 nA S

IGES gfs RGint

V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 15 A

Ciss Coss Crss QGate LE IC(SC)

V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 48 0 V, I C =1 5 A V G E = 15 V

860 55 24 87 7 137.5

pF

nC nH A

V G E = 15 V , t S C 5 s V C C = 4 0 0 V, T j 150 C

1)

Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.1 July 06

Power Semiconductors

TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm d i r r /d t T j =2 5 C , V R = 4 00 V , I F = 1 5 A, d i F / d t =8 2 5 A/ s td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 1 5 A, V G E = 0 /1 5 V, R G = 15 , 1) L =1 5 4n H, 1) C = 3 9p F Energy losses include tail and diode reverse recovery. Symbol Conditions

IKA15N60T q
Value min. Typ. 17 11 188 50 0.22 0.35 0.57 34 0.24 10.4 718 max. ns C A A/s mJ Unit

ns

Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm d i r r /d t T j =1 7 5 C V R = 4 00 V , I F = 1 5 A, d i F / d t =8 2 5 A/ s 140 1.0 14.7 495 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets T j =1 7 5 C, V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , RG= 15 1) L =1 5 4n H, 1) C = 3 9p F Energy losses include tail and diode reverse recovery. 17 15 212 79 0.34 0.47 0.81 mJ ns Symbol Conditions Value min. Typ. max. Unit

1)

Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.1 July 06

Power Semiconductors

TrenchStop Series

IKA15N60T q
tp=2s

TC=80C 30A

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

10A

10s

50s 1A 1ms 10ms DC 0.1A

20A TC=110C 10A

Ic
Ic

0A 10Hz

100Hz

1kHz

10kHz

100kHz

1V

10V

100V

1000V

f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 15)

VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)

35W 30W 25W 20W 15W 10W 5W 0W 25C

IC, COLLECTOR CURRENT

Ptot, POWER DISSIPATION

10A

5A

50C

75C

100C

125C

150C

0A 25C

75C

125C

TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)

TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)

Power Semiconductors

Rev. 2.1 July 06

TrenchStop Series
40A 40A 35A V GE =20V 35A V GE =20V 15V 13V 11V 20A 15A 10A 5A 0A 0V 1V 2V 3V 0V 1V 9V 7V

IKA15N60T q

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

30A 25A 20A 15A 10A 5A 0A

15V 13V 11V 9V 7V

30A 25A

2V

3V

VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)

VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)

35A 30A 25A 20A 15A 10A T J = 1 7 5 C 5A 0A 2 5 C

VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

2.5V

IC =30A

IC, COLLECTOR CURRENT

2.0V

1.5V

IC =15A IC =7.5A

1.0V

0.5V

0.0V

0V

2V

4V

6V

8V

0C

50C

100C

150C

VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)

TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)

Power Semiconductors

Rev. 2.1 July 06

TrenchStop Series

IKA15N60T q
t d(off)

t d(off)

100ns

t, SWITCHING TIMES

tf t d(on) 10ns

t, SWITCHING TIMES

100ns tf

tr

t d(on) tr

1ns 0A 5A 10A 15A 20A 2 5A 10ns

IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 15, Dynamic test circuit in Figure E)

RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E)

7V 6V m ax. 5V 4V 3V 2V 1V 0V -50C m in. typ.

t d(off) 100ns tf

t d(on)

10ns

tr 50C 75C 100C 125C 15 0C

VGE(th), GATE-EMITT TRSHOLD VOLTAGE

t, SWITCHING TIMES

25C

0C

50C

100C

150C

TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, RG=15, Dynamic test circuit in Figure E)

TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.21mA)

Power Semiconductors

Rev. 2.1 July 06

TrenchStop Series
1.6 mJ 1.4 mJ 1.2 mJ 1.0 mJ 0.8 mJ 0.6 mJ 0.4 mJ
0 .0m J 0A

IKA15N60T q
E ts*

1 .6m J

*) E on an d E ts in c lu d e lo s s es d u e to d io de re c ov e ry

*) E on and E ts include losses due to diode recovery

E, SWITCHING ENERGY LOSSES

1 .2m J E off 0 .8m J

E on * 0 .4m J

E, SWITCHING ENERGY LOSSES

E ts *

E off

5A

10A

1 5A

20 A

25 A

0.2 mJ

E on*
0 10 20 30 40 50 60 70 80

IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 15, Dynamic test circuit in Figure E)

RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E)

0.9mJ *) E on and E ts include losses 0.8mJ due to diode recovery

E, SWITCHING ENERGY LOSSES

0.7mJ 0.6mJ 0.5mJ 0.4mJ E off 0.3mJ E on* 0.2mJ 25C 50C 75C 100C 125C 150C E ts*

E, SWITCHING ENERGY LOSSES

1.0m J

0.8m J E ts * 0.6m J E off 0.4m J

0.2m J E on * 0.0m J 300V 350V 400V 450V

TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, RG = 15, Dynamic test circuit in Figure E)

VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 15A, RG = 15, Dynamic test circuit in Figure E)

Power Semiconductors

Rev. 2.1 July 06

TrenchStop Series

IKA15N60T q
C iss

1nF

VGE, GATE-EMITTER VOLTAGE

15V

120V 480V

10V

c, CAPACITANCE

100pF C oss

5V

C rss
0V 0nC

20nC

40nC

60nC

80nC

100nC

10pF

0V

10V

20V

30V

40V

50V

QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A)

VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)

12s

IC(sc), short circuit COLLECTOR CURRENT

200A

tSC, SHORT CIRCUIT WITHSTAND TIME

10s 8s 6s 4s 2s 0s 10V

150A

100A

50A

0A 12V

14V

16V

18V

11V

12V

13V

14V

VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)

VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C)

Power Semiconductors

Rev. 2.1 July 06

TrenchStop Series

IKA15N60T q

D=0.5

D=0.5

ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

10 K/W

0.2 0.1
R,(K/W) 1.634 1.541 0.423 0.223 0.236 0.122
R1

10 K/W

0.2 0.1 0.05 0.02

0.05 0.02 10 K/W

4.13 1.00 3.83*10-2 3.26*10-3 4.82*10-4 6.64*10-5

, (s)

10 K/W

-1

0.01

, (s) 1.11*10-1 2.552*10-2 3.914*10-3 4.92*10-4 7.19*10-5 7.4*10-6

0.01 single pulse

single pulse

C1=1/R1

C2=2/R2

10s 100s 1ms

10ms 100ms

1s

10s

10 K/W

-2

10s 100s 1ms

10ms 100ms

1s

10s

tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T)

tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)

200ns

1.0C

T J=175C

trr, REVERSE RECOVERY TIME

TJ=175C
160ns

Qrr, REVERSE RECOVERY CHARGE

0.8C

120ns

0.6C

80ns

TJ=25C

0.4C

T J=25C

40ns

0.2C

0ns 400A/s

600A/s

800A/s

0.0C 400A/s

600A/s

800A/s

diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=15A, Dynamic test circuit in Figure E)

diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 15A, Dynamic test circuit in Figure E)

Power Semiconductors

Rev. 2.1 July 06

TrenchStop Series

IKA15N60T q

16A 14A 12A 10A 8A 6A 4A 2A 0A

T J =175C
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT

-700A/s -600A/s -500A/s -400A/s -300A/s -200A/s -100A/s 0A/s 400A/s

Irr, REVERSE RECOVERY CURRENT

T J=175C

T J =25C

T J=25C

400A/s

600A/s

800A/s

600A/s

800A/s

diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 15A, Dynamic test circuit in Figure E)

diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=15A, Dynamic test circuit in Figure E)

40A

2.0V

I F =30A

30A

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

1.5V

15A

20A TJ=25C 175C 10A

1.0V

7.5A

0.5V

0A

0V

1V

2V

0.0V 0C

50C

100C

150C

VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage

TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature

Power Semiconductors

10

Rev. 2.1 July 06

TrenchStop Series

IKA15N60T q

PG-TO220-3-31

Please refer to mounting instructions

Power Semiconductors

11

Rev. 2.1 July 06

TrenchStop Series
i,v diF /dt

IKA15N60T q
tr r =tS +tF Qr r =QS +QF tr r

IF

tS QS

tF 10% Ir r m t VR

Ir r m

QF

dir r /dt 90% Ir r m

Figure C. Definition of diodes switching characteristics

r1

r2

rn

r1

r2

rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent circuit

Figure B. Definition of switching losses

Figure E. Dynamic test circuit Leakage inductance L =60nH an d Stray capacity C =40pF.

Power Semiconductors

12

Rev. 2.1 July 06

TrenchStop Series

IKA15N60T q

Edition 2006-01 Published by Infineon Technologies AG 81726 Mnchen, Germany Infineon Technologies AG 7/10/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Power Semiconductors

13

Rev. 2.1 July 06