HGTG10N120BND

Data Sheet

December 2001

35A, 1200V, NPT Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode
The HGTG10N120BND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used
is the development type TA49290. The Diode used is the
development type TA49189.

Features
35A, 1200V, TC = 25oC
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC
Short Circuit Rating
Low Conduction Loss

Packaging
JEDEC STYLE TO-247

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

E
C
G

Formerly Developmental Type TA49302.

Ordering Information
PART NUMBER
HGTG10N120BND

PACKAGE
TO-247

BRAND
10N120BND

NOTE: When ordering, use the entire part number.

Symbol
C

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627

4,417,385
4,605,948
4,684,413
4,809,045
4,890,143

2001 Fairchild Semiconductor Corporation

4,430,792
4,620,211
4,694,313
4,809,047
4,901,127

4,443,931
4,631,564
4,717,679
4,810,665
4,904,609

4,466,176
4,639,754
4,743,952
4,823,176
4,933,740

4,516,143
4,639,762
4,783,690
4,837,606
4,963,951

4,532,534
4,641,162
4,794,432
4,860,080
4,969,027

4,587,713
4,644,637
4,801,986
4,883,767

HGTG10N120BND Rev. B

HGTG10N120BND
Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES

Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

HGTG10N120BND
1200

UNITS
V

35
17
80
20
30
55A at 1200V
298
2.38
-55 to 150
260
8
15

A
A
A
V
V
W
W/oC
oC
oC
s
s

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 840V, TJ = 125oC, RG = 10.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current

Collector to Emitter Saturation Voltage

Gate to Emitter Threshold Voltage

Gate to Emitter Leakage Current

SYMBOL
BVCES
ICES

VCE(SAT)

VGE(TH)
IGES

TEST CONDITIONS
IC = 250A, VGE = 0V
VCE = 1200V

IC = 10A,
VGE = 15V

TC = 25oC
TC = 125oC
TC = 150oC
TC = 25oC
TC = 150oC

IC = 90A, VCE = VGE

VGE = 20V

MIN

TYP

MAX

UNITS

1200

250

170

2.5

mA

2.45

2.7

3.7

4.2

6.0

6.8

250

nA

55

Switching SOA

SSOA

TJ = 150oC, RG = 10, VGE = 15V,

L = 400H, VCE(PK) = 1200V

Gate to Emitter Plateau Voltage

VGEP

IC = 10A, VCE = 600V

10.4

IC = 10A,
VCE = 600V

VGE = 15V

100

120

nC

VGE = 20V

130

150

nC

23

26

ns

11

15

ns

165

210

ns

100

140

ns

0.85

1.05

mJ

0.8

1.0

mJ

On-State Gate Charge

Current Turn-On Delay Time

Current Rise Time
Current Turn-Off Delay Time

QG(ON)

td(ON)I
trI
td(OFF)I

Current Fall Time

tfI

Turn-On Energy

EON

Turn-Off Energy (Note 3)

EOFF

2001 Fairchild Semiconductor Corporation

IGBT and Diode at TJ = 25oC

ICE = 10A
VCE = 960V
VGE = 15V
RG = 10
L = 2mH
Test Circuit (Figure 20)

HGTG10N120BND Rev. B

HGTG10N120BND
Electrical Specifications

TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER

SYMBOL

Current Turn-On Delay Time

td(ON)I

Current Rise Time

trI

Current Turn-Off Delay Time

td(OFF)I

Current Fall Time

tfI

Turn-On Energy

EON

Turn-Off Energy (Note 3)

EOFF

Diode Forward Voltage

VEC

Diode Reverse Recovery Time

trr

Thermal Resistance Junction To Case

RJC

TEST CONDITIONS

MIN

TYP

MAX

UNITS

21

25

ns

11

15

ns

190

250

ns

140

200

ns

1.75

2.3

mJ

1.1

1.4

mJ

IEC = 10A

2.55

3.2

IEC = 10A, dIEC/dt = 200A/s

57

70

ns

IEC = 1A, dIEC/dt = 200A/s

32

40

ns

IGBT

0.42

oC/W

Diode

1.25

oC/W

IGBT and Diode at TJ = 150oC

ICE = 10A
VCE = 960V
VGE = 15V
RG = 10
L = 2mH
Test Circuit (Figure 20)

NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Unless Otherwise Specified

ICE , DC COLLECTOR CURRENT (A)

35
VGE = 15V
30
25
20
15
10
5
0
25

50

75

100

125

TC , CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

2001 Fairchild Semiconductor Corporation

150

ICE , COLLECTOR TO EMITTER CURRENT (A)

Typical Performance Curves

60
50
TJ = 150oC, RG = 10, VG = 15V, L = 400H
40
30
20
10
0
0

200

400

600

800

1000

1200

1400

VCE , COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

HGTG10N120BND Rev. B

HGTG10N120BND

TJ = 150oC, RG = 10, L = 2mH, V CE = 960V

100
50

TC = 75oC, VGE = 15V, IDEAL DIODE

fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
10 fMAX2 = (PD - PC) / (EON + EOFF)
TC
PC = CONDUCTION DISSIPATION 75oC
(DUTY FACTOR = 50%)
75oC
110oC
RJC = 0.42oC/W, SEE NOTES
110oC

VGE
15V
12V
15V
12V

1
2

10

20

25

250
VCE = 840V, RG = 10, TJ = 125oC
200

20
tSC
15

150

10

100

12

ICE , COLLECTOR TO EMITTER CURRENT (A)

DUTY CYCLE <0.5%, VGE = 12V

PULSE DURATION = 250s
40

TC = 25oC

20
TC = 150oC
10

10

16

50

TC = -55oC

TC = 25oC

40

30

TC = 150oC

20

10
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250s
0
0

10

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE

FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

2.0

5
RG = 10, L = 2mH, VCE = 960V

EOFF , TURN-OFF ENERGY LOSS (mJ)

EON , TURN-ON ENERGY LOSS (mJ)

15

50

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

4
TJ = 150oC, VGE = 12V, VGE = 15V
3

1
TJ = 25oC, VGE = 12V, VGE = 15V
0

14

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

50

TC = -55oC

13

VGE , GATE TO EMITTER VOLTAGE (V)

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

30

ISC

ISC, PEAK SHORT CIRCUIT CURRENT (A)

Unless Otherwise Specified (Continued)

tSC , SHORT CIRCUIT WITHSTAND TIME (s)

fMAX , OPERATING FREQUENCY (kHz)

Typical Performance Curves

10

15

ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

2001 Fairchild Semiconductor Corporation

20

RG = 10, L = 2mH, VCE = 960V

1.5
TJ = 150oC, VGE = 12V OR 15V
1.0
TJ = 25oC, VGE = 12V OR 15V
0.5

10

15

20

ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

HGTG10N120BND Rev. B

HGTG10N120BND
Typical Performance Curves

Unless Otherwise Specified (Continued)

50
RG = 10, L = 2mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 12V

RG = 10, L = 2mH, VCE = 960V

40

35
trI , RISE TIME (ns)

tdI , TURN-ON DELAY TIME (ns)

40

30

25

TJ = 25oC, TJ = 150oC, VGE = 12V

30

20

10

20

TJ = 25oC OR TJ = 150oC, VGE = 15V

TJ = 25oC, TJ = 150oC, VGE = 15V

15

15

10

20

ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

300

15

20

RG = 10, L = 2mH, VCE = 960V

RG = 10, L = 2mH, VCE = 960V

350

250

300

tfI , FALL TIME (ns)

td(OFF)I , TURN-OFF DELAY TIME (ns)

10

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

400

VGE = 12V, VGE = 15V, TJ = 150oC

250
200

200
TJ = 150oC, VGE = 12V OR 15V
150

100
150
100

TJ = 25oC, VGE = 12V OR 15V

VGE = 12V, VGE = 15V, TJ = 25oC

50
0

15

10

20
VGE, GATE TO EMITTER VOLTAGE (V)

DUTY CYCLE <0.5%, VCE = 20V

PULSE DURATION = 250s
80

60

TC = 25oC

TC = 150oC

TC = -55oC
10

11

12

13

VGE , GATE TO EMITTER VOLTAGE (V)

FIGURE 13. TRANSFER CHARACTERISTIC

2001 Fairchild Semiconductor Corporation

14

20

FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER

CURRENT

100

20

15

10

ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

40

20

ICE , COLLECTOR TO EMITTER CURRENT (A)

ICE , COLLECTOR TO EMITTER CURRENT (A)

ICE , COLLECTOR TO EMITTER CURRENT (A)

15

IG (REF) = 1mA, RL = 60, TC = 25oC

15
VCE = 1200V

VCE = 800V

10
VCE = 400V
5

20

40

60

80

100

120

QG , GATE CHARGE (nC)

FIGURE 14. GATE CHARGE WAVEFORMS

HGTG10N120BND Rev. B

HGTG10N120BND
Unless Otherwise Specified (Continued)

C, CAPACITANCE (nF)

FREQUENCY = 1MHz

3
CIES
2

CRES
COES

0
0

10

15

20

25

ICE, COLLECTOR TO EMITTER CURRENT (A)

Typical Performance Curves

15

DUTY CYCLE <0.5%, TC = 110oC

PULSE DURATION = 250s

12
VGE = 15V
9
VGE = 10V

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER

VOLTAGE

ZJC , NORMALIZED THERMAL RESPONSE

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE

100
0.5
0.2
0.1
10-1

0.05
0.02

t1

0.01

DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZJC X RJC) + TC

SINGLE PULSE

10-2
10-5

10-4

10-3

10-2

PD
t2
10-1

100

t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

100
t, RECOVERY TIMES (ns)

IF , FORWARD CURRENT (A)

70

150oC
10

25oC

TC = 25oC, dIEC / dt = 200A/s

60
50
trr

40
30

ta
20

-55oC

tb

10

1
1

VF , FORWARD VOLTAGE (V)

FIGURE 18. DIODE FORWARD CURRENT vs FORWARD

VOLTAGE DROP

2001 Fairchild Semiconductor Corporation

10

20

IF , FORWARD CURRENT (A)

FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT

HGTG10N120BND Rev. B

HGTG10N120BND
Test Circuit and Waveforms
HGTG10N120BND
90%
10%

VGE

EON
EOFF
VCE

L = 2mH

90%
RG = 10
+

ICE
VDD = 960V

FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT

10%
td(OFF)I

tfI

trI
td(ON)I

FIGURE 21. SWITCHING TEST WAVEFORMS

Handling Precautions for IGBTs

Operating Frequency Information

Insulated Gate Bipolar Transistors are susceptible to

gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handlers body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:

Operating frequency information for a typical device

(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2 ; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as ECCOSORBD LD26 or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.

2001 Fairchild Semiconductor Corporation

fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).

Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM . td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC .
The sum of device switching and conduction losses must not
exceed PD . A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).

HGTG10N120BND Rev. B

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series

FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE

OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SILENT SWITCHER

SMART START
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
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UltraFET

VCX

STAR*POWER is used under license

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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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As used herein:
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failure to perform when properly used in accordance
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with instructions for use provided in the labeling, can be
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4