Data Sheet HGTG11N120CND

HGTG11N120CND
Data Sheet
December 2001
43A, 1200V, NPT Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode
The HGTG11N120CND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The IGBT
used is the development type TA49291. The Diode used is
the development type TA49189.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Features
43A, 1200V, TC = 25oC
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 340ns at TJ = 150oC
Short Circuit Rating
Low Conduction Loss
Thermal Impedance SPICE Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
G
Formerly Developmental Type TA49303.
Ordering Information
PART NUMBER
HGTG11N120CND
PACKAGE
TO-247
BRAND
11N120CND
NOTE: When ordering, use the entire part number.
Symbol
C
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
2001 Fairchild Semiconductor Corporation
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
HGTG11N120CND Rev. B
HGTG11N120CND
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified

HGTG11N120CND
UNITS
1200
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
43
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
22
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
80
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
20
V
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES

Collector Current Continuous
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
30
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
55A at 1200V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
298
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.38
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
260
oC
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
15
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 840V, TJ = 125oC, RG = 10 .
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage

Gate to Emitter Leakage Current
SYMBOL
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
TEST CONDITIONS
IC = 250A, VGE = 0V
VCE = 1200V
IC = 11A,
VGE = 15V
TC = 25oC
TC = 125oC
TC = 150oC
TC = 25oC
TC = 150oC
IC = 90A, VCE = VGE

VGE = 20V
MIN
TYP
MAX
UNITS
1200
250
300
3.5
mA
2.1
2.4
2.9
3.5
6.0
6.8
250
nA
55
Switching SOA
SSOA
TJ = 150oC, RG = 10, VGE = 15V,

L = 400H, VCE(PK) = 1200V
Gate to Emitter Plateau Voltage
VGEP
IC = 11A, VCE = 600V
10.4
IC = 11A,
VCE = 600V
VGE = 15V
100
120
nC
VGE = 20V
130
150
nC
23
26
ns
12
16
ns
180
240
ns
190
220
ns
0.95
1.3
mJ
1.3
1.6
mJ
On-State Gate Charge
Current Turn-On Delay Time

Current Rise Time
Current Turn-Off Delay Time
QG(ON)
td(ON)I
trI
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
IGBT and Diode at TJ = 25oC,

ICE = 11A,
VCE = 960V,
VGE = 15V,
RG = 10 ,
L = 2mH,
Test Circuit (Figure 20)
HGTG11N120CND
Electrical Specifications
TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
Diode Forward Voltage
VEC
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
RJC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
21
24
ns
12
16
ns
210
280
ns
360
400
ns
1.9
2.5
mJ
2.1
2.5
mJ
IEC = 11A
2.6
3.2
IEC = 11A, dlEC/dt = 200A/s
60
70
ns
IEC = 1A, dlEC/dt = 200A/s
32
40
ns
IGBT
0.42
oC/W
Diode
1.25
oC/W
IGBT and Diode at TJ = 150oC,

ICE = 11A,
VCE = 960V,
VGE = 15V,
RG = 10 ,
L = 2mH,
Test Circuit (Figure 20)
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Unless Otherwise Specified
ICE , DC COLLECTOR CURRENT (A)
45
VGE = 15V
40
35
30
25
20
15
10
5
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
60
50
TJ = 150oC, RG = 10, VGE = 15V, L = 400H
40
30
20
10
0
0
200
400
600
800
1000
1200
1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGTG11N120CND
TJ = 150oC, RG = 10, L = 2mH, V CE = 960V

TC = 75oC, VGE = 15V, IDEAL DIODE
100
50
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)

TC
VGE
fMAX2 = (PD - PC)/(EON + EOFF)
75oC 15V
o
10 PC = CONDUCTION DISSIPATION 75 C 12V
110oC 15V
(DUTY FACTOR = 50%)
110oC 12V
RJC = 0.42oC/W, SEE NOTES
5
5
10
2
20
25
20
200
tSC
150
10
100
5
12
40
30
TC = 150oC
20
10
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250s
0
TC = 25oC
40
TC = -55oC
30
TC = 150oC
20
10
DUTY CYCLE < 0.5%, VGE = 15V
0
0
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3.5
5
RG = 10, L = 2mH, VCE = 960V
EOFF , TURN-OFF ENERGY LOSS (mJ)
EON , TURN-ON ENERGY LOSS (mJ)
50
16
15
50
4
TJ = 150oC, VGE = 12V, VGE = 15V
3
1
TJ = 25oC, VGE = 12V, VGE = 15V
0
14
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
TC = 25oC
2
4
6
13
VGE , GATE TO EMITTER VOLTAGE (V)
50
ISC
15
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT
TC = -55oC
250
VCE = 840V, RG = 10, TJ = 125oC
ISC, PEAK SHORT CIRCUIT CURRENT (A)
fMAX, OPERATING FREQUENCY (kHz)
200
Unless Otherwise Specified (Continued)

tSC , SHORT CIRCUIT WITHSTAND TIME (s)
10
15
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT
20
RG = 10, L = 2mH, VCE = 960V

3.0
2.5
TJ = 150oC, VGE = 12V OR 15V
2.0
1.5
1.0
TJ = 25oC, VGE = 12V OR 15V
0.5
0
10
15
20
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT
HGTG11N120CND
40
50
RG = 10, L = 2mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 12V
35
30
25
20
15
TJ = 25oC, TJ = 150oC, VGE = 12V
40
trI , RISE TIME (ns)
tdI , TURN-ON DELAY TIME (ns)
RG = 10, L = 2mH, VCE = 960V
30
20
10
TJ = 25oC OR TJ = 150oC, VGE = 15V
TJ = 25oC, TJ = 150oC, VGE = 15V

5
15
10
20
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT
700
RG = 10, L = 2mH, VCE = 960V
RG = 10, L = 2mH, VCE = 960V
450
600
400
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
20
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT
500
VGE = 12V, VGE = 15V, TJ = 150oC
350
300
250
500
TJ = 150oC, VGE = 12V OR 15V
400
300
200
200
150
100
TJ = 25oC, VGE = 12V OR 15V
VGE = 12V, VGE = 15V, TJ = 25oC
100
10
15
5
20
10
15
20
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER

CURRENT
20
100
DUTY CYCLE < 0.5%, VCE = 20V
VGE, GATE TO EMITTER VOLTAGE (V)
5
10
15
80
60
TC = 25oC
40
20
TC = 150oC
0
7
TC = -55oC
10
11
12
13
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
14
15
IG(REF) = 1mA, RL = 54.5, TC = 25oC
15
VCE = 1200V
VCE = 800V
10
VCE = 400V
5
0
0
20
60
80
40
QG , GATE CHARGE (nC)
100
120
FIGURE 14. GATE CHARGE WAVEFORMS
HGTG11N120CND

C, CAPACITANCE (nF)
FREQUENCY = 1MHz
3
CIES
2
1
COES
0
CRES
0
10
15
20
25
15
DUTY CYCLE < 0.5%, TC = 110oC

12
VGE = 15V
9
VGE = 10V
6
0
0
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER

VOLTAGE
ZJC , NORMALIZED THERMAL RESPONSE
100
0.5
0.2
10-1
t1
0.1
PD
0.05
t2
0.02
DUTY FACTOR, D = t1 / t2
0.01
PEAK TJ = (PD X ZJC X RJC) + TC
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
70
TC = 25oC, dIEC / dt = 200A/s
60
t, RECOVERY TIMES (ns)
IF , FORWARD CURRENT (A)
100
150oC
10
25oC
50
trr
40
30
ta
20
-55oC
1
1
VF , FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD

VOLTAGE DROP
10
tb
1
10
20
IF , FORWARD CURRENT (A)
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
HGTG11N120CND
Test Circuit and Waveforms
HGTG11N120CND
90%
10%
VGE
EON
EOFF
L = 2mH
VCE
RG = 10
90%
+
-
ICE
VDD = 960V
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to

gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handlers body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
Operating frequency information for a typical device (Figure 3)

is presented as a guide for estimating device performance for
a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows fMAX1 or
fMAX2; whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting
springs or by the insertion into conductive material such as
ECCOSORBD LD26 or equivalent.
2. When devices are removed by hand from their carriers, the
hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup on
the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).

Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions are
possible. td(OFF)I and td(ON)I are defined in Figure 21. Device
turn-off delay can establish an additional frequency limiting
condition for an application other than TJM. td(OFF)I is
important when controlling output ripple under a lightly loaded
condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC .
The sum of device switching and conduction losses must not
exceed PD . A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms shown
in Figure 21. EON is the integral of the instantaneous power
loss (ICE x VCE) during turn-on and EOFF is the integral of the
instantaneous power loss (ICE x VCE) during turn-off. All tail
losses are included in the calculation for EOFF; i.e., the
collector current equals zero (ICE = 0).
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series
FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SILENT SWITCHER
SMART START
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET
VCX
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4

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HGTG11N120CND

43A, 1200V, NPT Series N-Channel IGBT

Formerly Developmental Type TA49303.

NOTE: When ordering, use the entire part number.

2001 Fairchild Semiconductor Corporation

TC = 25oC, Unless Otherwise Specified

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

Short Circuit Withstand Time (Note 2) at VGE = 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

TC = 25oC, Unless Otherwise Specified

Collector to Emitter Saturation Voltage

Gate to Emitter Threshold Voltage

IC = 90A, VCE = VGE

TJ = 150oC, RG = 10, VGE = 15V,

Gate to Emitter Plateau Voltage

IC = 11A, VCE = 600V

On-State Gate Charge

Current Turn-On Delay Time

Current Fall Time

Turn-Off Energy (Note 3)

2001 Fairchild Semiconductor Corporation

IGBT and Diode at TJ = 25oC,

TC = 25oC, Unless Otherwise Specified (Continued)

Current Turn-On Delay Time

Current Rise Time

Current Turn-Off Delay Time

Current Fall Time

Turn-Off Energy (Note 3)

Diode Forward Voltage

Diode Reverse Recovery Time

Thermal Resistance Junction To Case

IEC = 11A, dlEC/dt = 200A/s

IEC = 1A, dlEC/dt = 200A/s

IGBT and Diode at TJ = 150oC,

Unless Otherwise Specified

ICE , DC COLLECTOR CURRENT (A)

TC , CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

2001 Fairchild Semiconductor Corporation

ICE, COLLECTOR TO EMITTER CURRENT (A)

Typical Performance Curves

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

TJ = 150oC, RG = 10, L = 2mH, V CE = 960V

fMAX1 = 0.05 / (td(OFF)I + td(ON)I)

ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

EOFF , TURN-OFF ENERGY LOSS (mJ)

EON , TURN-ON ENERGY LOSS (mJ)