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in

TrenchStop Series

IKW75N60T
q

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode
C

Very low VCE(sat) 1.5 V (typ.)

Maximum Junction Temperature 175 C
Short circuit withstand time 5s
Positive temperature coefficient in VCE(sat)
very tight parameter distribution
high ruggedness, temperature stable behaviour
very high switching speed
Low EMI
Very soft, fast recovery anti-parallel EmCon HE diode
1)
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

PG-TO-247-3-21

Applications:
Frequency Converters
Uninterrupted Power Supply
Type
IKW75N60T

VCE

IC

VCE(sat),Tj=25C

Tj,max

Marking

Package

600V

75A

1.5V

175C

K75T60

PG-TO-247-3-21

Maximum Ratings
Parameter

Symbol

Collector-emitter voltage

VCE

DC collector current, limited by Tjmax

IC

Value

Unit

600

V
A

2)

TC = 25C

80

TC = 100C

75

Pulsed collector current, tp limited by Tjmax

ICpul s

225

Turn off safe operating area (VCE 600V, Tj 175C)

225

Diode forward current, limited by Tjmax

IF
2)

TC = 25C

80

TC = 100C

75

Diode pulsed current, tp limited by Tjmax

IFpul s

225

Gate-emitter voltage

VGE

20

tSC

Power dissipation TC = 25C

Ptot

428

Operating junction temperature

Tj

-40...+175

Storage temperature

Tstg

-55...+175

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

3)

Short circuit withstand time

VGE = 15V, VCC 400V, Tj 150C

260

1)

J-STD-020 and JESD-022

Value limited by bondwire
3)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)

Power Semiconductors

Rev. 2.4 May 06

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IKW75N60T
q

TrenchStop Series
Thermal Resistance
Parameter

Symbol

Conditions

Max. Value

Unit

RthJC

0.35

K/W

RthJCD

0.6

RthJA

40

Characteristic
IGBT thermal resistance,
junction case
Diode thermal resistance,
junction case
Thermal resistance,
junction ambient
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter

Symbol

Conditions

Value
min.

Typ.

max.

600

T j =2 5 C

1.5

2.0

T j =1 7 5 C

1.9

T j =2 5 C

1.65

2.0

T j =1 7 5 C

1.6

4.1

4.9

5.7

Unit

Static Characteristic
Collector-emitter breakdown voltage

V ( B R ) C E S V G E = 0V , I C = 0 .2m A

Collector-emitter saturation voltage

VCE(sat)

VF

Diode forward voltage

V G E = 15 V , I C = 75 A

V G E = 0V , I F = 7 5 A

Gate-emitter threshold voltage

VGE(th)

I C = 1. 2m A, V C E = V G E

Zero gate voltage collector current

ICES

V C E = 60 0 V ,
V G E = 0V

T j =2 5 C

40

T j =1 7 5 C

1000

Gate-emitter leakage current

IGES

V C E = 0V , V G E =2 0 V

100

nA

Transconductance

gfs

V C E = 20 V , I C = 75 A

41

Integrated gate resistor

RGint

Dynamic Characteristic
Input capacitance

Ciss

V C E = 25 V ,

4620

Output capacitance

Coss

V G E = 0V ,

288

Reverse transfer capacitance

Crss

f= 1 MH z

Gate charge

QGate

V C C = 48 0 V, I C =7 5 A

137
470

nC

13

nH

687.5

pF

V G E = 15 V
LE

Internal emitter inductance

measured 5mm (0.197 in.) from case
Short circuit collector current

1)

1)

IC(SC)

V G E = 15 V ,t S C 5 s
V C C = 4 0 0 V,
T j 150C

Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

Rev. 2.4 May 06

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IKW75N60T
q

TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter

Symbol

Conditions

Value
min.

typ.

max.

33

36

330

35

2.0

2.5

4.5

Unit

IGBT Characteristic
Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

T j =2 5 C ,
V C C = 40 0 V, I C = 7 5 A,
V G E = 0/ 15 V ,
R G = 5 ,
1)
L =1 0 0n H,
1)
C = 3 9p F
Energy losses include
tail and diode
reverse recovery.

Diode reverse recovery time

trr

T j =2 5 C ,

121

ns

Diode reverse recovery charge

Qrr

V R = 4 00 V , I F = 7 5 A,

2.4

Diode peak reverse recovery current

Irrm

d i F / d t =1 4 60 A / s

38.5

Diode peak rate of fall of reverse

recovery current during t b

d i r r /d t

921

A/s

ns

mJ

Anti-Parallel Diode Characteristic

Switching Characteristic, Inductive Load, at Tj=175 C

Parameter

Symbol

Conditions

Value
min.

typ.

max.

32

37

363

38

2.9

2.9

5.8

Unit

IGBT Characteristic
Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

T j =1 7 5 C,
V C C = 40 0 V, I C = 7 5 A,
V G E = 0/ 15 V ,
RG= 5
1)
L =1 0 0n H,
1)
C = 3 9p F
Energy losses include
tail and diode
reverse recovery.

Diode reverse recovery time

trr

T j =1 7 5 C

182

ns

Diode reverse recovery charge

Qrr

V R = 4 00 V , I F = 7 5 A,

5.8

Diode peak reverse recovery current

Irrm

d i F / d t =1 4 60 A / s

56.2

Diode peak rate of fall of reverse

recovery current during t b

d i r r /d t

1013

A/s

ns

mJ

Anti-Parallel Diode Characteristic

1)

Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.

Power Semiconductors

Rev. 2.4 May 06

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IKW75N60T
q

TrenchStop Series

t p=1s
100A

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

200A

150A
T C =80C
100A

50A

T C =110C

Ic

100H z

50s
10A

1ms
DC

1A

Ic
0A
10H z

10s

1kH z

10kH z

1V

100kH z

f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 5)

10V

100V

10ms

1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=15V)

400W

120A

IC, COLLECTOR CURRENT

Ptot, POWER DISSIPATION

350W
300W
250W
200W
150W
100W

90A

60A

30A

50W
0W
25C

50C

75C

0A
25C

100C 125C 150C

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of
case temperature
(Tj 175C)

Power Semiconductors

75C

125C

TC, CASE TEMPERATURE

Figure 4. DC Collector current as a function
of case temperature
(VGE 15V, Tj 175C)

Rev. 2.4 May 06

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IKW75N60T
q

TrenchStop Series

120A

V GE =20V

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

120A

15V
90A

13V
11V
9V

60A

7V
30A

0A
0V

1V

2V

VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

IC, COLLECTOR CURRENT

40A
T J = 1 7 5 C
2 5 C

2V

4V

6V

8V

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic
(VCE=20V)

Power Semiconductors

11V
9V

60A

7V
30A

1V

2V

3V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristic
(Tj = 175C)

60A

0V

13V

0V

80A

0A

15V
90A

0A

3V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic
(Tj = 25C)

20A

V G E =20V

IC =150A

2.5V

2.0V
IC =75A

1.5V

IC =37.5A

1.0V

0.5V

0.0V

0C

50C

100C

150C

TJ, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)

Rev. 2.4 May 06

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IKW75N60T
q

TrenchStop Series

t, SWITCHING TIMES

t, SWITCHING TIMES

t d(off)

100ns
tf

t d(off)

100n s
tf

tr
t d(on)

t d(on)

tr
10ns

0A

40A

80A

10 ns

120A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175C,
VCE = 400V, VGE = 0/15V, RG = 5,
Dynamic test circuit in Figure E)

10

15

RG, GATE RESISTOR

Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175C,
VCE= 400V, VGE = 0/15V, IC = 75A,
Dynamic test circuit in Figure E)

t, SWITCHING TIMES

t d(off)

100ns

tr

tf

t d(on)
25C

50C

75C

6V
m ax.
typ.

5V
4V

m in.

3V
2V
1V
0V
-50C

100C 125C 15 0C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 10A, RG=5,
Dynamic test circuit in Figure E)

Power Semiconductors

VGE(th), GATE-EMITT TRSHOLD VOLTAGE

7V

0C

50C

100C

150C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 1.2mA)

Rev. 2.4 May 06

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IKW75N60T
q

TrenchStop Series

*) E on a nd E ts in clu d e lo ss e s

Ets*

12.0mJ

Eon*
8.0mJ

Eoff
4.0mJ

d u e to d io d e rec o v e ry

E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

*) Eon and Ets include losses

due to diode recovery

0A

20A

40A

60A

4 .0m J
E on *
2 .0m J
E off

80A 100A 120A 140A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175C,
VCE = 400V, VGE = 0/15V, RG = 5,
Dynamic test circuit in Figure E)

*) Eon and Ets include losses

due to diode recovery

2.0mJ
Eon*
1.0mJ

75C

8m J

E on *

6m J
E ts *
4m J

E off
2m J

0m J
300V

100C 125C 150C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 75A, RG = 5,
Dynamic test circuit in Figure E)

Power Semiconductors

15

due to diode recovery

Ets*

Eoff

50C

10

*) E on and E ts include losses

4.0mJ

0.0mJ
25C

RG, GATE RESISTOR

Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175C,
VCE = 400V, VGE = 0/15V, IC = 75A,
Dynamic test circuit in Figure E)

E, SWITCHING ENERGY LOSSES

5.0mJ

E, SWITCHING ENERGY LOSSES

6 .0m J

0 .0m J

0.0mJ

3.0mJ

E ts *

8 .0m J

350V

400V

450V

500V

550V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175C,
VGE = 0/15V, IC = 75A, RG = 5,
Dynamic test circuit in Figure E)

Rev. 2.4 May 06

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IKW75N60T
q

TrenchStop Series

VGE, GATE-EMITTER VOLTAGE

C iss

c, CAPACITANCE

15V

120V
10V

480V

1nF

C oss

5V

C rss

100pF

0V
0nC

100nC

200nC

300nC

0V

400nC

QGE, GATE CHARGE

Figure 17. Typical gate charge
(IC=75 A)

10V

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)

tSC, SHORT CIRCUIT WITHSTAND TIME

IC(sc), short circuit COLLECTOR CURRENT

12s

1000A

750A

500A

250A

0A
12V

14V

16V

8s
6s
4s
2s
0s
10V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE 400V, Tj 150C)

Power Semiconductors

10s

11V

12V

13V

14V

VGE, GATE-EMITETR VOLTAGE

Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25C,
TJmax<150C)

Rev. 2.4 May 06

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IKW75N60T
q

TrenchStop Series

D=0.5

ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

D=0.5
-1

10 K/W

0.2
0.1
0.05

-2

10 K/W

R,(K/W)
0.1968
0.0733
0.0509
0.02 0.0290

0.01 R 1

, (s)

0.115504
0.009340
0.000823
0.000119
R2

C 1 = 1 /R 1

C 2 = 2 /R 2

single pulse

0.2
-1

10 K/W

0.1
0.05
0.02
0.01

-2

10 K/W

R,(K/W)
0.1846
0.1681
0.1261
0.0818
0.04
R1

, (s)
0.110373
0.015543
0.001239
0.000120
0.000008
R2

C 1 = 1 /R 1 C 2 = 2 /R 2

single pulse

-3

10s 100s

1ms

10ms 100ms

tP, PULSE WIDTH

Figure 21. IGBT transient thermal resistance
(D = tp / T)

trr, REVERSE RECOVERY TIME

200ns

TJ=175C

150ns

100ns

TJ=25C
50ns

0ns
1000A/s

tP, PULSE WIDTH

Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)

5C

1500A/s

T J=175C

4C

3C

2C

T J=25C
1C

0C
1000A/s

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=75A,
Dynamic test circuit in Figure E)

Power Semiconductors

100ns 1s 10s 100s 1ms 10ms100ms

Qrr, REVERSE RECOVERY CHARGE

10 K/W
1s

1500A/s

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 75A,
Dynamic test circuit in Figure E)

Rev. 2.4 May 06

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TrenchStop Series

T J =175C

IKW75N60T
q
T J=175C

-1200A/s

-1000A/s

50A
40A

T J =25C
30A
20A
10A
0A

1000A/s

200A

VF, FORWARD VOLTAGE

100A

50A

1V

-400A/s

-200A/s

1500A/s

I F =150A

10

75A

1.5V

37.5A

1.0V

0.5V

0.0V
0C

2V

VF, FORWARD VOLTAGE

Figure 27. Typical diode forward current as
a function of forward voltage

Power Semiconductors

-600A/s

2.0V

150A

0V

-800A/s

diF/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=75A,
Dynamic test circuit in Figure E)

T J =25C
175C

0A

T J=25C

0A/s
1000A/s

1500A/s

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 75A,
Dynamic test circuit in Figure E)

IF, FORWARD CURRENT

dirr/dt, DIODE PEAK RATE OF FALL

OF REVERSE RECOVERY CURRENT

Irr, REVERSE RECOVERY CURRENT

60A

50C

100C

150C

TJ, JUNCTION TEMPERATURE

Figure 28. Typical diode forward voltage as a
function of junction temperature

Rev. 2.4 May 06

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TrenchStop Series

IKW75N60T
q

PG-TO247-3-21

Power Semiconductors

11

Rev. 2.4 May 06

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IKW75N60T
q

TrenchStop Series
i,v

tr r =tS +tF

diF /dt

Qr r =QS +QF
IF

tS
QS

Ir r m

tr r

tF

QF

10% Ir r m

dir r /dt
90% Ir r m

t
VR

Figure C. Definition of diodes

switching characteristics
1

r1

r2

rn

Tj (t)
p(t)

r1

r2

rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Figure B. Definition of switching losses

Power Semiconductors

12

Rev. 2.4 May 06

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TrenchStop Series

IKW75N60T
q

Edition 2006-01
Published by
Infineon Technologies AG
81726 Mnchen, Germany
Infineon Technologies AG 11/20/06.
All Rights Reserved.
Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information

For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings

Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Power Semiconductors

13

Rev. 2.4 May 06