DEFINITIONS

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1.

A fuse is an electrical safety device that protects an electric circuit from
excessive electric current. 
2. A diode is a semiconductor device that essentially acts as a one-way switch for
current.
3. A digital buffer (or a voltage buffer) is an electronic circuit element used to
isolate an input from an output.
4. The R-S flip-flop is used to temporarily hold or store information until it is
needed. A single R-S flip-flop will store one binary digit, either a 1 or a 0.
5. A resistor is an electrical component that limits or regulates the flow of
electrical current in an electronic circuit.
6. An inductor, also called a coil, choke, or reactor, is a passive two-terminal
electrical component that stores energy in a magnetic field when electric
current flows through it.
7. In electronics, a ferrite core is a type of magnetic core made of ferrite on which
the windings of electric transformers and other wound components such as
inductors are formed.
8. a component for producing inductance, a property that has electrical circuits or
components such as coils.
9. An antenna is a specialized transducer that converts electric current into
electromagnetic (EM) waves or vice versa. 
10.  electron tube consisting of three electrodes—cathode filament, anode plate,
and control grid—mounted in an evacuated metal or glass container. 
11. A NOT gate (or inverter) is a logic gate where the output is the opposite of the
input.
12. This feedback selectively enables one of the two set/reset inputs so that they
cannot both carry an active signal to the multivibrator circuit, thus eliminating
the invalid condition.
13. A capacitor is a passive electronic component that stores energy in the form of
an electrostatic field.
14. A variable resistor is a resistor of which the electric resistance value can be
adjusted. A variable resistor is in essence an electro-mechanical transducer
and normally works by sliding a contact (wiper) over a resistive element.
15.  one or more turns, usually roughly circular or cylindrical, of current-carrying
wire designed to produce a magnetic field or to provide electrical resistance or
inductance;
16. Moving the core deeper into the coil increases the permeability, which
increases the inductance. Moving the core further out of the coil lowers the
permeability and, consequently, the inductance.
17. AC generator is a machine that converts mechanical energy into electrical
energy. The AC Generator's input supply is mechanical energy supplied by
steam turbines, gas turbines and combustion engines.
18. The tube has a triode for amplification, along with two diodes, one typically for
use as a detector and the other as a rectifier for automatic gain control, in one
envelope.
19. In digital electronics, a tri-state or three-state buffer is a type of digital buffer
that has three stable states: a high output state, a low output state, and a high-
impedance state.
20. A D (or Delay) Flip Flop (Figure 1) is a digital electronic circuit used to delay the
change of state of its output signal (Q) until the next rising edge of a clock
timing input signal occurs.
21. A rectifier is a special type of diode that converts alternating current (AC) into
direct current (DC).
22. A Zener diode is a silicon semiconductor device that permits current to flow in
either a forward or reverse direction. 
23. Varactor Diode Varactor diode is a type of diode whose internal capacitance
varies with respect to the reverse voltage.
24. Gunn diodes are two-terminal negative differential resistance (NDR) devices
that, when coupled to a suitably tuned ac resonator, generate RF power.
25. The schottky diode is a type of metal – semiconductor junction diode, which is
also known as hot-carrier diode, low voltage diode or schottky barrier diode.
26. A constant current diode also called a current limiting diode (CLD), is an
electronic device that regulates or limits current to a maximum value.
27. In electronics, a step recovery diode (SRD, snap-off diode or charge-storage
diode or memory varactor) is a semiconductor junction diode with the ability to
generate extremely short pulses. 
28. A tunnel diode or Esaki diode is a type of semiconductor diode that has
effectively "negative resistance" due to the quantum mechanical effect called
tunneling.
29. A Tunnel diode is a heavily doped p-n junction diode in which the electric
current decreases as the voltage increases.
30. The schottky diode is a type of metal – semiconductor junction diode, which is
also known as hot-carrier diode, low voltage diode or schottky barrier diode.
31. A trimmer, or preset, is a miniature adjustable electrical component.
32. Definition. As defined by IEC 60539, NTC (Negative Temperature Coefficient)
thermistors are thermally sen- sitive semiconductor resistors which show a
decrease in resistance as temperature increases.
33. Photoresistors, also known as LDR (light-dependent resistors),
are components made of semiconductors. 
34. The polarity can be defined as the induced voltage direction in the primary
windings and the secondary winding.
35. A DC generator is an electrical machine whose main function is to convert
mechanical energy into electricity.
36.  a vacuum tube with eight electrodes comprising a cathode, an anode, a
control grid, and five additional electrodes that are usually grids.
37. An AND gate is an electrical circuit that combines two signals so that the
output is on if both signals are present.
38. T Flip-Flop is a single input logic circuit that holds or toggles its output
according to the input state.
39. A PIN diode can be defined as: A diode with a wide and undoped intrinsic
semiconductor region between a p-type and an n-type semiconductor region.
40. A photodiode is a semiconductor device with a P-N junction that converts
photons (or light) into electrical current. The P layer has an abundance of holes
(positive), and the N layer has an abundance of electrons (negative).
41. A Light Emitting Diode (LED) is a semiconductor device, which can emit light
when an electric current passes through it.
42. Bi-color lights are manufactured with a combination of tungsten balanced and
daylight balanced bulbs.
43. A laser diode is a semiconductor that uses a p-n junction for producing
coherent radiation with the same frequency and phase which is either in the
visible or infrared spectrum.
44. A diode that conducts and blocks electrical current magnetically, rather than
through an interface between two semiconductors, has been developed at the
University of Missouri.
45. A sensor device embedded on microprocessors used to monitor the
temperature of the processor's die is also known as a "thermal diode".
46. The DIAC can be switched from the off state to the ON state for either polarity
of the applied voltage. It is equivalent to two PN junction diodes connected in
an anti-parallel combination.
47. Most DIACs have a three-layer structure with breakover voltage
of approximately 30 V and an on voltage of less than 3 V.
48. We can define bridge rectifiers as a type of full-wave rectifier that uses four or
more diodes in a bridge circuit configuration to efficiently convert alternating
(AC) current to a direct (DC) current.
49. A variable capacitor is a capacitor whose capacitance may be intentionally and
repeatedly changed mechanically or electronically.
50. An electrolytic capacitor is a type of capacitor that uses an electrolyte to
achieve a larger capacitance than other capacitor types.
51. A heating element is a material or device that directly converts electrical
energy into heat or thermal energy through a principle known as Joule heating.
52. These resistors, also known as non-inductive resistors, have pure resistance.
53. a rotating machine that supplies an electrical output with unidirectional voltage
and current.
54. a resistor that changes resistance depending on the amount of light incident
on it.
55. an electronic circuit that gives a high output (1) if one or more of its inputs are
high.
56. converts a digital signal from the computer into an electrical voltage which can
be used to drive electrical equipment
57. a diode that conducts electrical current only after its breakover voltage, VBO,
has been reached momentarily.
58. primarily used as trigger devices in phase-triggering and variable power
control applications
59. a bidirectional, three-electrode AC switch that allows electrons to flow in either
direction.
60. a special type of thyristor which combines a diac and a triac in a single
package.
61. is a four-layer semiconductor device, consisting of alternating P-type and N-
type materials (PNPN).
62. a unilateral, four-layer three junction P-N-P-N silicon device with four
electrodes namely cathode C, cathode gate GX, anode gate G2, and the
anode A.
63. a semiconductor diode formed by the junction of a semiconductor with a metal.
64. Differentiating itself from the normal high power thyristor by having an
integrated reverse diode.
65. The gate controls the flow of current between the anode and cathode. The
primary function of a thyristor is to control electric power and current by acting
as a switch.
66. the forward anode current should be brought to zero for sufficient time to allow
the removal of charged carriers
67. Thyristors are switched on by a gate signal, but even after the gate signal is de-
asserted (removed, reverse biased), the thyristor remains in the on state until a
turn-off condition occurs
68. The DIAC (diode for alternating current) is a diode that conducts electrical
current only after its breakover voltage, VBO, has been reached momentarily.
69. Phototransistors are a form of bipolar transistor that is sensitive to light
70. The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor
electrical characteristics closely approximating those of an “ideal” four layer
diode.
71. specifically designed and characterized for applications where stability of
switching voltage over a wide temperature range and well matched bilateral
characteristics are an asset.
72. NPN transistors are a type of bipolar transistor with three layers that are used
for signal amplification
73. The PNP transistor is a type of transistor in which one n-type material is doped
with two p-type materials
74.  The transistor in which one p-type material is placed between two n-type
materials is known as NPN transistor.
75. The emitter "emits" electrons into the base, which controls the number of
electrons the emitter emits.
76. The Darlington Transistor consists of two PNP transistors or NPN transistors
connected back to back.
77. A type of bipolar junction transistor including a photodiode junction.
78. It is a single package with a common collector terminal for both transistors.
The Emitter terminal of the first transistor is connected with the base terminal of
the second transistor.
79. An avalanche transistor is a bipolar junction transistor designed for operation
in the region of its collector-current/collector-to-emitter voltage
80.  A combination of a transistor and a Schottky diode that prevents the transistor
from saturating by diverting the excessive input current.
81.  Reduces a thermal system to a number of discrete “lumps” and assumes that
the temperature difference inside each lump is negligible.
82. Polarized Capacitors are the ones that have specific positive and negative
polarities.
83. A capacitor is a passive electronic component that stores energy in the form of
an electrostatic field.
84. A varistor is a voltage dependent resistor (VDR). The resistance of a varistor is
variable and depends on the voltage applied.
85. Ground, in the context of electronics, is the reference point for all signals or a
common path in an electrical circuit where all of the voltages can be measured
from.
86. A cathode ray tube (CRT) is the glass video display component of an
electronic device (usually a television or computer monitor).
87. An OR gate is a logical gate that produces inclusive disjunction.
88. A semiconductor wafer on which thousands or millions of tiny resistors,
capacitors, diodes and transistors are fabricated.
89. MOSFETs also have three terminals, namely Drain (D), Source (S) and Gate
(G) and also one more (optional) terminal called substrate or Body (B).
90. MOSFETs also have three terminals, namely Drain (D), Source (S) and Gate
(G) and also one more (optional) terminal called substrate or Body (B).
91. MOSFETs also have three terminals, namely Drain (D), Source (S) and Gate
(G) and also one more (optional) terminal called substrate or Body (B).
92. The substrate or body of the transistor is made of p-type silicon formed from a
single crystal. 
93. The substrate or body of the transistor is made of p-type silicon formed from a
single crystal. 
94. The substrate or body of the transistor is made of p-type silicon formed from a
single crystal. 
95. The substrate or body of the transistor is made of p-type silicon formed from a
single crystal. 
96. It has four terminals namely; source S, Drain D, Gate G and Body B.
97. It has four terminals namely; source S, Drain D, Gate G and Body B.
98. A MOSFET that normally turns ON without applying any gate voltage when
you connect is known as a depletion mode MOSFET. 
99. A MOSFET that normally turns ON without applying any gate voltage when
you connect is known as a depletion mode MOSFET. 
100. The depletion-mode MOSFET has a physically implanted channel
connecting the source side and the drain side
101. When a negative voltage is applied to the gate terminal of MOSFET, the
positive charge carrying holes get accumulated near the oxide layer, forming a
channel from source to drain termina
102. When a negative voltage is applied to the gate terminal of MOSFET, the
positive charge carrying holes get accumulated near the oxide layer, forming a
channel from source to drain termina
103. Source, gate, and drain. The MOSFET is very far the most common
transistor and can be used in both analog and digital ckt. 
104. A unijunction transistor (UJT) is a three-lead electronic semiconductor
device with only one junction that acts exclusively as an electrically controlled
switch.
105. The UJT is a three-terminal, semiconductor device which exhibits negative
resistance and switching. characteristics for use as a relaxation oscillator in
phase control applications.
106. A N-Channel JFET is a JFET whose channel is composed of primarily
electrons as the charge carrier.
107. A N-Channel JFET is a JFET whose channel is composed of primarily
electrons as the charge carrier.
108. A P-Channel JFET is a JFET whose channel is composed primarily of
holes as the charge carrier.
109. A P-Channel JFET is a JFET whose channel is composed primarily of
holes as the charge carrier.
110. A promising device architecture that can concomitantly achieve low dark
current and high gain is the photo field-effect transistor
111. NPN transistors are a type of bipolar transistor with three layers that are
used for signal amplification
112. A programmable unijunction transistor (PUT) is a three-lead electronic
semiconductor device which is similar in its characteristics to a unijunction
transistor, except that its behavior can be controlled using external
components.

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