Department of Computer Science and Engineering

Bangamata Sheikh Fojilatunnesa Mujib Science & Technology University

LAB REPORT
Course name: Basic Electronics
Course Code: CSE 2131

Submitted by: Submitted to:

MD Saifullah Azad Md. Humaun Kabir
ID: 21111112, Session:2020-21 Chairman and Assistant Professor
Dept. of Computer Science &Engineering Dept. of Computer Science &Engineering
Bangamata Sheikh Fojilatunnesa Mujib Bangamata Sheikh Fojilatunnesa Mujib
Science & Technology University, Jamalpur Science & Technology University, Jamalpur

Date of submission:
Experiment No: 01

Experiment Name :Introduction to Electronics Components ( resistor , capacitor , inductor ,

diode, transistor etc )and devices( multimeter, DC power supply,AC power supply, transformer,
breadboard ,oscilloscope etc).

Objective :
1.To introduce these electronic equipment and the characteristics of those.
2.To understand and use these components.

Introduction :
The branch of engineering in which the flow and control of electrons in vacuum or semiconductor are
studied is called electronics. The device which controls the flow of electrons is called electronic device.
These devices are the main building blocks of electronic circuits. An electronic component is any
basic discrete device or physical entity in an electronic system used to affect electrons or their
associated fields. Electronic components are mostly industrial products, available in a singular form and
are not to be confused with electrical elements, which are conceptual abstractions representing idealized
electronic components and elements.

There are many ways to classify different types of electronic components ,but the most common way is to
classify them in three types :

1. Active Component

2. Passive Component

3. Electromechanical Component

Apparatus :

1. Resistor
2. Capacitor
3. Inductor
 4. Diode
5. Transistor
6. Multimeter
7. DC power supply
8. AC power supply
9. Transformer
10. Breadboard
11. Oscilloscope

Diagram :

Fig: Resistor Fig : Transistor

Fig: Capacitor Fig : Inductor Fig : Diode

Fig: Transformer Fig : Breadboard

Discussion :

Resistor: A resistor is a passive two-terminal electrical component that implements electrical resistance
as a circuit element. In electronic circuits, resistors are used to reduce current flow, adjust signal levels, to
divide voltages, bias active elements, and terminate transmission lines, among other uses. A resistor is
known for installing electrical resistance in the electronic circuit. These are basically two-terminal passive
components which are of two types namely

1.Fixed resistors 2.Variable resistors.

Types of resistors commonly used include carbon film resistor, carbon resistor, metal film resistor, light-
dependent resistor, non-linear resistor, thermistor, carbon composition resistor, carbon film potentiometer,
wire wound resistor, and wire-wound potentiometer.

Capacitor : A capacitor is a two-terminal electrical device that can store energy in the form of an electric
charge. It consists of two electrical conductors that are separated by a distance. The space between the
conductors may be filled by vacuum or with an insulating material known as a dielectric.

Diode: A diode is a semiconductor device that essentially acts as a one-way switch for current. It allows
current to flow easily in one direction, but severely restricts current from flowing in the opposite direction

Transistor: A transistor is a miniature semiconductor that regulates or controls current or voltage flow in
addition amplifying and generating these electrical signals and acting as a switch/gate for them.
Typically, transistors consist of three layers, or terminals, of a semiconductor material, each of which can
carry a

Multimeter: A multimeter (also known as a volt-ohm-milliammeter, volt-ohmmeter or VOM) is a

measuring instrument that can measure multiple electrical properties. A typical multimeter can measure

voltage, resistance, and current, in which case can be used as a voltmeter, ammeter, and ohmmeter .

DC power supply: A multimeter (also known as a volt-ohm-milliammeter, volt-ohmmeter or VOM)

is a measuring instrument that can measure multiple electrical properties. A typical multimeter can
measure voltage, resistance, and current, in which case can be used as a voltmeter, ammeter, and

ohmmeter.

AC power supply: An AC power supply is a type of power supply used to supply alternating current
(AC) power to a load. The power input may be in an AC or DC form. The power supplied from wall
outlets (mains supply) and various power storage devices is oftentimes incompatible with the power

needed by the load.

Transformer:  A transformer is a device that transfers electric energy from one alternating-current
circuit to one or more other circuits, either increasing (stepping up) or reducing (stepping down) the
voltage.

Breadboard: A breadboard consists of plastic block holding a matrix of electrical sockets of a size
suitable for gripping thin connecting wire, component wires or the pins of transistors and integrated
circuits (ICs). The sockets are connected inside the board, usually in rows of five sockets.

Oscilloscope: An oscilloscope is a laboratory instrument commonly used to display and analyze the
waveform of electronic signals. In effect, the device draws a graph of the instantaneous signal voltage as a
function of time.

Conclusion: Electronic circuit are very important for any electronics device.Resistors, capacitors, and
inductors are simple passive circuit elements that can be used to process signals with regard to amplitude
and frequency response. They cannot amplify the power of a signal.Diodes can be used as simple
electronic switches, and are often used in the conversion of AC power to DC power.Transistors are the
simplest electronic devices that are capable of amplifying signal power.In this experiment,we learned
about electronics components and devices,which are used in lab and industrial products.
 Experiment No:2

Experiment Name: Volt-Ampere Characteristic of PN junction diode.

Objective:

1. To plot Volt-Ampere Characteristics of Silicon P-N Junction Diode.

2. To find cut-in Voltage for Silicon P-N Junction diode.
3. To find static and dynamic resistances for P-N junction diode.

Apparatus:

S.No Apparatus Type Range Quantity

01 PN Junction diode 1N4007 01

02 Resistance 470Ω,1KΩ 01

03 Regulated Power supply (0-30V) 01

04 Ammeter (0-100mA), (0- 01

100µA)
05 Voltmeter (0-100mA), (0- 01
100µA)
06 Breadboard

07 Wires

Introduction:

The semi -conductor diode is created by simply joining an n-type and a p-type material together nothing
more just the joining of one material with a majority carrier of electrons to one with a majority carrier of
holes. The P-N junction supports uni-directional current flow. If +ve terminal of the input supply is
connected to anode (P-side) and –ve terminal of the input supply is connected to cathode (Nside), then
diode is said to be forward biased. In this condition the height of the potential barrier at the junction is
lowered by an amount equal to given forward biasing voltage. Both the holes from p-side and electrons
from n-side cross the junction simultaneously and constitute a forward current( injected minority current –
due to holes crossing the junction and entering N-side of the diode, due to electrons crossing the
junction and entering P-side of the diode). Assuming current flowing through the diode to be very large,
the diode can be approximated as short- circuited switch. If –ve terminal of the input supply is connected
to anode (p-side) and +ve terminal of the input supply is connected to cathode (n-side) then the diode is
said to be reverse biased. In this condition an amount equal to reverse biasing voltage increases the
height of the potential barrier at the junction. Both the holes on p-side and electrons on n-side tend to
move away from the junction thereby increasing the depleted region. However the process cannot
continue indefinitely, thus a small current called reverse saturation current continues to flow in the diode.
This small current is due to thermally generated carriers.

Circuit Diagram:

Forward Bias:

Reverse Bias:

Experiment:

Forward Biased condition:

1. Connect the PN Junction diode in forward bias i.e Anode is connected to positive of the
power supply and cathode is connected to negative of the power supply .

2. Use a Regulated power supply of range (0-30)V and a series resistance of 470Ώ

3. By varying the input voltage in steps of 0.1V, note down corresponding Ammeter readings.
(IF) and voltmeter reading.

4. Plot the graph between forward voltage (VF) and forward current (IF).

Reverse Biased condition:

1. Connect the PN Junction diode in Reverse bias i.e; anode is connected to negative of the
power supply and cathode is connected to positive of the power supply.

2. Use a Regulated power supply of range (0-30)V and a series resistance of 1KΏ

3. By varying the input voltage vary voltage (VR) in steps of 1V and note down corresponding
Ammeter readings. (IR)

4. Plot the graph between Reverse voltage (VR) and Reverse current (IR).

Experimental Data:

Forward Bias:

Vi Ima Vo
.1 0 .186
.3 0 .345
,4 .04 .430
,7 .28 .515
.9 .47 .542
 1.8 1.32 .59
3 2.5 .621
4 3.61 .638
5 4.57 .65
7 6.61 .667
10 10.58 .68

Reverse Bias:

Vi I(µA) Vo

.5 0 .52
1 0 1
2 .1 2.1
4 .3 3.7
5 .5 5.21
6.5 .6 6.5
9 .8 8.9
10 1 10.05
15 1.5 14.09
20 2 19.6

Model Graph:

Result and Discussion:

In the case of forward and reverse bias of the diode we see that as the voltage in forward bias
increases the current after the knee voltage also increases, but the value of current dose not
increase much as the voltage increase before the knee voltage. In the case of reverse bias the
value of current dose not increase much as the voltage increase, a small amount that is in micro
ampere.
Precautions:

1. While doing the experiment do not exceed the ratings of the diode. This may lead to damage
of the diode.

2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.

3. Do not switch ON the power supply unless you have checked the circuit connections as per
the circuit diagram.
 Experiment no:03
Experiment name: Study the Volt-Ampere Characteristics of Zener Diode.

Objective:
1. To plot Volt-Ampere Characteristics of Zener Diode in reverse bias.
2. To find Zener Breakdown Voltage in reverse biased condition.
3. To know volt-Ampere Characteristics of Zenner Diode in forward bias.

Zener diode is a silicon

semiconductor device that
permits current to flow in either
a
forward or reverse direction.
The diode consists of a special,
heavily doped p-n junction,
designed to
conduct in the reverse direction
when a certain specified voltage
is reached..
Fig # 01
An ideal P-N Junction diode
does not conduct in reverse
biased condition. A Zener diode
Conducts
excellently even in reverse
biased condition. These diodes
operate at a precise Value of
voltage
called break down voltage.
A Zener diode when forward
biased behaves like an ordinary
P-N junction diode.
A Zener diode when reverse
biased can either undergo
avalanche break down or zener
break down.
Avalanche break down:-
If both
p-side and n-side of the diode
are lightly doped, depletion
region at
the junction widens.
Application of a very large
electric field at the junction may
rupture covalent
bonding between electrons.
Such rupture leads to the
generation of a large number of
charge carriers
resulting in avalanche
multiplication.
Zener breaks down:-
If both p-
side and n-side of the diode are
heavily doped, depletion region
at the
junction reduces. Application of
even a small voltage at the
junction ruptures covalent
bonding and
generates large number of
charge carriers. Such sudden
increase in the number of
charge carriers
results in Zener mechanism
Zener diode is a silicon
semiconductor device that
permits current to flow in either
a
forward or reverse direction.
The diode consists of a special,
heavily doped p-n junction,
designed to
conduct in the reverse direction
when a certain specified voltage
is reached..
Fig # 01
An ideal P-N Junction diode
does not conduct in reverse
biased condition. A Zener diode
Conducts
excellently even in reverse
biased condition. These diodes
operate at a precise Value of
voltage
called break down voltage.
A Zener diode when forward
biased behaves like an ordinary
P-N junction diode.
A Zener diode when reverse
biased can either undergo
avalanche break down or zener
break down.
Avalanche break down:-
If both
p-side and n-side of the diode
are lightly doped, depletion
region at
the junction widens.
Application of a very large
electric field at the junction may
rupture covalent
bonding between electrons.
Such rupture leads to the
generation of a large number of
charge carriers
resulting in avalanche
multiplication.
Zener breaks down:-
If both p-
side and n-side of the diode are
heavily doped, depletion region
at the
junction reduces. Application of
even a small voltage at the
junction ruptures covalent
bonding and
generates large number of
charge carriers. Such sudden
increase in the number of
charge carriers
results in Zener mechanism
Zener diode is a silicon
semiconductor device that
permits current to flow in either
a
forward or reverse direction.
The diode consists of a special,
heavily doped p-n junction,
designed to
conduct in the reverse direction
when a certain specified voltage
is reached..
Fig # 01
An ideal P-N Junction diode
does not conduct in reverse
biased condition. A Zener diode
Conducts
excellently even in reverse
biased condition. These diodes
operate at a precise Value of
voltage
called break down voltage.
A Zener diode when forward
biased behaves like an ordinary
P-N junction diode.
A Zener diode when reverse
biased can either undergo
avalanche break down or zener
break down.
Avalanche break down:-
If both
p-side and n-side of the diode
are lightly doped, depletion
region at
the junction widens.
Application of a very large
electric field at the junction may
rupture covalent
bonding between electrons.
Such rupture leads to the
generation of a large number of
charge carriers
resulting in avalanche
multiplication.
Zener breaks down:-
If both p-
side and n-side of the diode are
heavily doped, depletion region
at the
junction reduces. Application of
even a small voltage at the
junction ruptures covalent
bonding and
generates large number of
charge carriers. Such sudden
increase in the number of
charge carriers
results in Zener mechanism
Zener diode is a silicon
semiconductor device that
permits current to flow in either
a
forward or reverse direction.
The diode consists of a special,
heavily doped p-n junction,
designed to
conduct in the reverse direction
when a certain specified voltage
is reached..
Fig # 01
An ideal P-N Junction diode
does not conduct in reverse
biased condition. A Zener diode
Conducts
excellently even in reverse
biased condition. These diodes
operate at a precise Value of
voltage
called break down voltage.
A Zener diode when forward
biased behaves like an ordinary
P-N junction diode.
A Zener diode when reverse
biased can either undergo
avalanche break down or zener
break down.
Avalanche break down:-
If both
p-side and n-side of the diode
are lightly doped, depletion
region at
the junction widens.
Application of a very large
electric field at the junction may
rupture covalent
bonding between electrons.
Such rupture leads to the
generation of a large number of
charge carriers
resulting in avalanche
multiplication.
Zener breaks down:-
If both p-
side and n-side of the diode are
heavily doped, depletion region
at the
junction reduces. Application of
even a small voltage at the
junction ruptures covalent
bonding and
generates large number of
charge carriers. Such sudden
increase in the number of
charge carriers
results in Zener mechanism
Introduction: Zener diode is a silicon semiconductor device that permits current to flow in
either a forward or reverse direction. The diode consists of a special, heavily doped p-n junction,
designed to conduct in the reverse direction when a certain specified voltage is reached.
An ideal P-N Junction diode does not conduct in reverse biased condition. A Zener diode
Conducts excellently even in reverse biased condition. These diodes operate at a precise Value of
voltage called break down voltage.
A Zener diode when forward biased behaves like an ordinary P-N junction diode. A Zener diode
when reverse biased can either undergo avalanche break down or Zener break down.
Avalanche break down: If both p-side and n-side of the diode are lightly doped, depletion
region at the junction widens. Application of a very large electric field at the junction may
rupture covalent bonding between electrons. Such rupture leads to the generation of a large
number of charge carriers resulting in
Zener break down: If both p-side and n-side of the diode are heavily doped, depletion region at
the junction reduces. Application of even a small voltage at the junction ruptures covalent
bonding and generates large number of charge carriers. Such sudden increase in the number of
charge carriers results in Zener mechanism.
Apparatus:
SL NO Name Rating Quantity
1 Zener diode 1
2 Resistance 1kΩ 1
3 Regulated Power supply 0-30V 1
4 Ammeter 0-200mA 1
5 Voltmeter 0-700V 1
6 Breadboard 1
7 Connecting wire 1

Circuit Diagram:

Fig1: Forward Bias

 Fig2: Reverse Bias
Precautions:
1. While doing the experiment do not exceed the ratings of the diode. This may lead to damage
of the diode.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as per
the circuit diagram.
Procedure:
Forward Bias Condition:
1. Connect the Zener diode in forward bias i.e; cathode is connected to negative of the power
supply and anode is connected to positive of the power supply as in circuit(Fig1).
2. Vary the input voltage and note down voltage (VR) and the corresponding values of current
( IR ).
Reverse Bias Condition:
1. Connect the Zener diode in Reverse bias i.e; anode is connected to negative of the power
supply and cathode is connected to positive of the power supply as in circuit(Fig2).
2. Vary the input voltage and note down reverse voltage (VR) and the corresponding values of
reverse current ( IR ).

Experimental Data:

Graph:
Results and Discussion: The V-I characteristic of Zener diode indicates that characteristic of
Zener diode in forward bias is same as PN junction diode. In reverse bias, a negligible constant
current flow through the Zener diode but the current becomes abruptly large at certain voltage.
This voltage is called as Zener voltage. This sudden and sharp increase in Zener current is called
as Zener breakdown.
Conclusion: Through this experiment, we were able to fully grasp the idea of forward and
reverse bias for the Zener diode.

Experiment No – 04
Experiment Name: Design and construction of a voltage stabilizer using Zener
diode.
Objective:
The objective of this experiment was to design and construct a voltage stabilizer
using a Zener diode. The Zener diode is a specialized type of diode that exhibits a
constant voltage drop across its terminals when operated in the reverse bias
mode. By utilizing this characteristic, we aimed to create a voltage stabilizer
circuit that would regulate the output voltage despite fluctuations in the input
voltage. The experimental setup involved selecting a suitable Zener diode,
designing the circuit, constructing it on a breadboard, and testing its performance
using varying input voltages.

Introduction:
Voltage stabilizers are crucial in electronic circuits to provide a constant and
stable output voltage. They protect sensitive components from damage caused by
voltage variations or spikes. The Zener diode, with its ability to maintain a
constant voltage across its terminals, serves as a valuable component in voltage
stabilization applications. In this experiment, we utilized the Zener diode's
characteristics to design and construct a voltage stabilizer.
Equipment:
I. Zener diode (specifications: [Insert specifications])
II. Resistors
III. Breadboard
IV. Connecting wires
V. DC power supply
VI. Digital multimeter

Circuit Diagram:
1. With load voltage stabilizer:

2. Without load voltage stabilizer:

Procedure:
With Load Voltage Regulation: --
1.
I. From a reverse characteristic of Zener diode the reverse breakdown
voltage is found.
II. Make connections as shown in circuit diagram.
III. Make sure the Zener is connected in reverse bias i.e. +V terminal
ofsupply being connected to Negative and –V terminal is connected
toPositive of Zener.
IV. Any two terminal of load resistance is connected to form one end and
theother terminal acts as the other end. Connect the load resistance in
parallelto the Zener Diode.
V. Increase the supply DC voltage to enter into the Zener
VI. Breakdown regionor the voltage which is found.
VII. Now change the variable point of the load resistance and measure
thecorresponding voltage.
VIII. Continue the taking voltage until the voltage falls below the
constantvalue.

2. Without Load Voltage Regulation:--

I. From a reverse characteristic of Zener diode the reverse
breakdownvoltage is found.
II. Make connections as shown in circuit diagram.
III. Make sure the Zener is connected in reverse bias i.e. +V terminal
ofsupply being connected to Negative and –V terminal is connected
toPositive of Zener.
IV. Increase the supply DC voltage to enter into the Zener Breakdown
regionor the voltage which is found.
V. Now vary the supply voltage and measure the corresponding voltage.
VI. Continue the taking voltage until the voltage falls below
the constantvalue.

Experiment Result:
1. With load voltage stabilization:
SI. NO. Suppy voltage Output voltage
1
2
3
4
5
6
7

2. Without Load voltage regulation:

SI. NO. Suppy voltage Output voltage
1
2
3
4
5
6
7

Results and Discussion:

Upon testing the voltage stabilizer circuit, we observed that the output voltage
remained relatively constant despite fluctuations in the input voltage. The Zener
diode regulated the voltage across its terminals, effectively stabilizing the output
voltage. The measurements obtained were recorded and analyzed for accuracy
and consistency.
Conclusion:
In conclusion, we successfully designed and constructed a voltage stabilizer using
a Zener diode. The circuit effectively regulated the output voltage, providing
stability despite variations in the input voltage. This experiment demonstrates the
practical application of Zener diodes in voltage stabilization systems.
Precautions:-
 I. The connection should be correct.
II. The supply voltage should not exceed 14 volts.c.
III. The load resistance not to be kept at minimum.d.
IV. Separate points should be used for +V and –V wires.e.
V. The series resistance must be connected to the Zener Diode

Experiment No – 05
Experiment Name: Design and construction of Half-Wave rectifier with and
without filter
Objective: 
1. To plot input and output waveforms of the Half Wave Rectifier with and without Filter
2. To find ripple factor of Half Wave Rectifier with and without Filter 
3. To find percentage regulation of Half Wave Rectifier with and without Filter 

Apparatus: 
S.No  Apparatus  Type  Range  Quantity

01  Transformer  Step-down  0-12V  01

02  Diode  IN4007  01

03  Decade Resistance Box  10-1KΩ  01

04  Capacitor  1000µF/25V  01

05  Digital Multimeter (DMM)  (0-20V)  01

06  Oscilloscope & Probes  01

07  Breadboard and Wires

Introduction: A device is capable of converting a sinusoidal input waveform into a

unidirectional waveform with non  zero average component is called a rectifier. A practical half
wave rectifier with a resistive load is shown in the circuit diagram. During the positive  half
cycle of the input the diode conducts and all the input voltage is dropped across R . During the L

negative half cycle the diode is reverse biased and it acts as almost open circuit so the output
voltage is  zero. The filter is simply a capacitor connected from the rectifier output to ground.
The capacitor quickly  charges at the beginning of a cycle and slowly discharges through R after L

the positive peak of the input  voltage. The variation in the capacitor voltage due to charging and
discharging is called ripple voltage.  Generally, ripple is undesirable, thus the smaller the ripple,
the better the filtering action.

Circuit Diagram: 

heoretical calculations for Ripple factor: 

Without Filter: 
With Filter: 
Ripple factor = 1 = 
2 3 fCR   L

Where f =50Hz 
C =1000µF  
R =1KΩ L

Experiment (without Filter) 

1. Connections are made as per the circuit diagram of the rectifier without filter.

2. Connect the primary side of the transformer to ac mains and the secondary side to the rectifier input. 
3.Note down the no load voltage before applying the load to the Circuit and by using the Multimeter,  measure
the ac input voltage of the rectifier and its frequency. 

4.Now Vary the RL in steps of 100Ω by varying the DRB from 1100Ω to 100Ω and note down the load  voltage
(VL) using the multimeter for each value of RL and calculate the percentage regulation. 

5.Measure the AC and DC voltage at the output of the rectifier for each value of RL using Multimeter.  6.Now
Observe the output waveform on CRO across RL and find out value of Vm. 
7. Now calculate Vdc, Vrms, Ripple Factor and other parameters of half wave rectifier according to the  given
formulae. 

8.Measure the amplitude and timeperiod of the transformer secondary(input waveform) by connecting  CRO. 

9.Feed the rectified output voltage to the CRO and measure the time period and amplitude ofthe  waveform.

Experiment (with Filter)

1. Connections are made as per the circuit diagram of the rectifier with filter.

2. Connect the primary side of the transformer to ac mains and the secondary side to the rectifier input.

3. By the multimeter, measure the ac input voltage of the rectifier and, ac and dc voltage at the output of the
rectifier.

4. Measure the amplitude and time period of the transformer secondary (input waveform) by connecting
oscilloscope.

5. Feed the rectified output voltage to the oscilloscope and measure the time period and amplitude ofthe
waveform.

Experiment Data: Without Filter  

 Using DMM: 
Vac Vdc Ripple Factor(ɤ)= Vac / Vdc

Using CRO: VNL=

RL VL Vm Vr Vdc Vr(rms) R.F %Regulation

(Ω) (V) (V) (V) =(Vm-Vr/2) =(Vr/4√3) =Vr(rms)/Vdc =(VNL-VL)/VL

Experiment Data: With Filter

Using DMM:
Vac Vdc Ripple Factor(ɤ)= Vac / Vdc

Using CRO: VNL=

RL VL Vm Vr Vdc Vr(rms) R.F %Regulation
 (Ω) (V) (V) (V) =(Vm-Vr/2) =(Vr/4√3) =Vr(rms)/Vdc =(VNL-VL)/VL

Model Graph:

Result: The input and output waveforms of Bridge wave rectifier is plotted and the ripple
factor and regulation at 1100Ω are
Ripple factor with Filter =
Ripple factor without Filter =
%Regulation=

Precautions:
1. The primary and secondary sides of the transformer should be carefully identified.
2. The polarities of the diode should be carefully identified

Experiment No: 07
Experiment Name: Design and construction of Full Wave Bridge rectifier
with and without filter
Introduction: A device is capable of converting a sinusoidal input waveform into a
unidirectional waveform with non-zero average component is called a rectifier. The Bridge
rectifier is a circuit, which converts an ac voltage to dc voltage using both half cycles of the input
ac voltage. The Bridge rectifier has four diodes connected to form a Bridge. The load resistance
is connected between the other two ends of the bridge. For the positive half cycle of the input ac
voltage, diode D1 and D3 conducts whereas diodes D2 and D4 remain in the OFF state. For the
negative half cycle of the input ac voltage, diode D2 and D4 conducts whereas diodes D1 and D3
remain in the OFF state. The conducting diodes will be in series with the load resistance RL and
hence the load current flows through RL in the same direction as in the previous half cycle. Thus
a bidirectional wave is converted into a unidirectional wave.

Objective
1. To plot input and output waveforms of the Bridge Rectifier with and without Filter
2. To find ripple factor for Bridge Rectifier with and without Filter
3. To find Regulation factor for Bridge Rectifier with and without Filter

Apparatus
S.N Apparatus Type Range Quantity
01 Transformer Stepdown 12-0-12V 01
02 Diode IN4007 04
03 Resistance 1KΩ 01
04 Capacitor 1000μF/25V 01
05 Voltmeter (0-20V) 01
06 CRO 01
07 Breadboard and Wires

Circuit Diagram:

With Filter
Without Filter

Theoretical calculations for Ripple factor:

With Filter:

Without Filter:

Experiment (With filter)

1. Connections are made as per the circuit diagram of the rectifier with filter.
2. Connect the primary side of the transformer to ac mains and the secondary side to the rectifier input.
3. By the multimeter, measure the ac input voltage of the rectifier and, ac and dc voltage at the output of
the rectifier.
4. Measure the amplitude and timeperiod of the transformer secondary(input waveform) by connecting
CRO.
5. Feed the rectified output voltage to the CRO and measure the time period and amplitude of the
waveform.
Experiment (without filter)
1. Connections are made as per the circuit diagram of the rectifier without filter.
2. Connect the primary side of the transformer to ac mains and the secondary side to the rectifier input.
3. By the multimeter, measure the ac input voltage of the rectifier and, ac and dc voltage at the output of the
rectifier.
4. Measure the amplitude and timeperiod of the transformer secondary(input waveform) by connecting CRO.
5. Feed the rectified output voltage to the CRO and measure the time period and amplitude of the
waveform.

Experimental Data: With Filter

Using DMM:
Vac Vdc Ripple Factor(ɤ)= Vac / Vdc

Using CRO: VNL=

RL VL Vm Vr Vdc Vr(rms) R.F %Regulation

(Ω) (V) (V) (V) =(Vm-Vr/2) =(Vr/4√3) =Vr(rms)/Vdc =(VNL-VL)/VL

Experimental Data: Without Filter

Using DMM:
Vac Vdc Ripple Factor(ɤ)= Vac / Vdc
Using CRO: VNL=
RL VL Vm Vr Vdc Vr(rms) R.F %Regulation
(Ω) (V) (V) (V) =(Vm-Vr/2) =(Vr/4√3) =Vr(rms)/Vdc =(VNL-VL)/VL

Model Graph:

Result: The input and output waveforms of Bridge wave rectifier is plotted and the ripple
factor and regulation at 1100Ω are
Ripple factor with Filter =
Ripple factor without Filter =
%Regulation=

Precautions:
1. The primary and secondary sides of the transformer should be carefully identified.
2. The polarities of the diode should be carefully identified