IXGN200N60A

HiPerFASTTM IGBT
IXGN 200N60
IXGN 200N60A
VCES
IC25
VCE(sat)
600 V
600 V
200 A
200 A
2.5 V
2.7 V
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25C to 150C
600
VCGR
TJ = 25C to 150C; RGE = 1 MW
600
VGES
Continuous
20
VGEM
Transient
30
IC25
TC = 25C
200
IC90
TC = 90C
100
ICM
TC = 25C, 1 ms
300
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125C, RG = 22 W

Clamped inductive load, L = 30 mH
ICM = 100
@ 0.8 VCES
PC
TC = 25C
600
-55 ... +150
TJM
150
Tstg
-55 ... +150
2500
3000
V~
V~
TJ
SOT-227B, miniBLOC
E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
International standard package
miniBLOC (ISOTOP compatible)
Aluminium nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Very high current, fast switching IGBT
Low VCE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Low collector-to-case capacitance
(< 50 pF)
Low package inductance (< 5 nH)
- easy to drive and to protect
VISOL
Md
50/60 Hz
IISOL 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
BVCES
IC
= 250 mA, VGE = 0 V
600
VGE(th)
IC
= 10 mA, VCE = VGE
2.5
ICES
VCE = 0.8 VCES

VGE = 0 V
IGES
VCE = 0 V, VGE = 20 V
VCE(sat)
IC
TJ = 25C
TJ = 125C
200
2
mA
mA
400
nA
2.5
2.7
V
V
Advantages
Easy to mount with 2 screws
Space savings
High power density
= IC90, VGE = 15 V
200N60
200N60A
IXYS reserves the right to change limits, test conditions, and dimensions.
2000 IXYS All rights reserved
92776I (1/98)
1-4
IXGN200N60
Symbol
Test Conditions
gfs
IC
Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ.
max.
= 60 A; VCE = 10 V,
40
57
9000
pF
IXGN200N60A
miniBLOC, SOT-227 B
Pulse test, t 300 ms, duty cycle 2 %

C ies
600
pF
C res
Coes
305
pF
Qg
465
nC
52
nC
Qgc
228
nC
td(on)
100
ns
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
M4 screws (4x) supplied

Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
t ri
Inductive load, TJ = 25C
100
ns
Eon
IC = IC90, VGE = 15 V, L = 30 mH,

VCE = 0.8 VCES, RG = Roff = 2.4 W
2.4
mJ
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
td(off)
tfi
Eoff
Remarks: Switching times

may increase for
VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
200N60
800
1100
ns
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
200N60A
700
950
ns
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
200N60
350
500
ns
200N60A
200
280
ns
200N60
14.4
mJ
200N60A
9.6
mJ
ns
td(on)
Inductive load, TJ = 125C (IXGN 200N60A)
100
t ri
IC = IC90, VGE = 15 V, L = 30 mH
200
ns
Eon
VCE = 0.8 VCES, RG = Roff = 2.4 W
4.8
mJ
td(off)
Remarks: Switching times

may increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
780
ns
250
ns
14.4
mJ
tfi
Eoff
0.21 K/W
RthJC
RthCK
0.05
K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXGN200N60
400
200
9V
120
80
40
11V
240
160
9V
7V
5V
0
1
13V
80
7V
VGE = 15V
320
IC - Amperes
160
IC - Amperes
TJ = 25C
VGE = 15V
13V
11V
TJ = 25C
10
VCE - Volts
VCE - Volts
Fig. 1. Saturation Voltage Characteristics
Fig. 2. Extended Output Characteristics

1.4
200
TJ = 125C
VGE = 15V
VCE (sat) - Normalized
VGE = 15V
13V
11V
160
IC - Amperes
IXGN200N60A
9V
120
80
7V
40
1.2
IC = 200A
1.0
IC = 100A
0.8
0.6
5V
0.4
25
0
0
50
75
VCE - Volts
100
125
150
TJ - Degrees C
Fig. 3. Saturation Voltage Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
160
VCE = 10V
f = 1Mhz
Capacitance - pF
IC - Amperes
120
80
TJ = 125C
40
10000
Ciss
1000
Coss
Crss
TJ = 25C
100
0
0
VGE - Volts
Fig. 5. Turn-off Safe Operating Area
10
12
14
10
15
20
25
30
35
40
VCE-Volts
Fig. 6. Temperature Dependence of

BVCES & VGE(th)
3-4
IXGN200N60
10
20
20
E(ON) - millijoules
12
E(ON)
IC = 200A
16
24
12
18
E(OFF)
0
250
E(ON)
IC = 100A
E(ON)
IC = 50A
12
E(OFF)
E(OFF) - millijoules
E(OFF)
E(OFF) - milliJoules
16
E(ON) - millijoules
RG = 4.7
30
E(OFF)
TJ = 125C
TJ = 125C
IXGN200N60A
E(ON)
50
100
150
200
10
IC - Amperes
30
40
50
0
60
RG - Ohms
Fig. 8. Dependence of tfi and EOFF on RG.
Fig. 7. Dependence of tfi and EOFF on IC.
400
18 VCE = 300V
IC = 50A
100
15
TJ = 125C
IC - Amperes
VGE - Volts
20
12
9
6
RG = 4.7
dV/dt < 5V/ns
10
3
0.1
0
0
100
200
300
400
500
600
100
200
300
400
500
600
VCE - Volts
Qg - nanocoulombs
Fig. 9. Gate Charge
Fig. 10. Junction Capacitance Curves
ZthJC (K/W)
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
10
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
4-4

IXGN200N60A

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IXGN200N60A

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HiPerFASTTM IGBT

TJ = 25C to 150C; RGE = 1 MW

VGE = 15 V, TVJ = 125C, RG = 22 W

-55 ... +150

-55 ... +150

= 250 mA, VGE = 0 V

= 10 mA, VCE = VGE

VCE = 0.8 VCES

2000 IXYS All rights reserved

Pulse test, t 300 ms, duty cycle 2 %

VCE = 25 V, VGE = 0 V, f = 1 MHz

IC = IC90, VGE = 15 V, VCE = 0.5 VCES

M4 screws (4x) supplied

Inductive load, TJ = 25C

IC = IC90, VGE = 15 V, L = 30 mH,

Remarks: Switching times

Inductive load, TJ = 125C (IXGN 200N60A)

VCE = 0.8 VCES, RG = Roff = 2.4 W

Remarks: Switching times

2000 IXYS All rights reserved

Fig. 1. Saturation Voltage Characteristics

Fig. 2. Extended Output Characteristics

VCE (sat) - Normalized

Fig. 3. Saturation Voltage Characteristics

Fig. 4. Temperature Dependence of VCE(sat)

Fig. 5. Turn-off Safe Operating Area

2000 IXYS All rights reserved

Fig. 6. Temperature Dependence of

Fig. 8. Dependence of tfi and EOFF on RG.

Fig. 7. Dependence of tfi and EOFF on IC.

Fig. 9. Gate Charge

Fig. 10. Junction Capacitance Curves

Pulse Width - Seconds

Fig. 11. Transient Thermal Resistance

2000 IXYS All rights reserved

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