24 N 60
24 N 60
24 N 60
IC25 48 A 48 A
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 10 W Clamped inductive load, L = 100 mH VGE = 15 V, VCE = 360 V, TJ = 125C RG = 82 W, non repetitive TC = 25C
Maximum Ratings 600 600 20 30 48 24 96 ICM = 48 @ 0.8 VCES 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W C C C
TO-247 AD
G = Gate, E = Emitter,
Features International standard package JEDEC TO-247 AD High frequency IGBT with guaranteed Short Circuit SOA capability 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity Applications
Mounting torque
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 3.5 TJ = 25C TJ = 125C 6.5 200 1 100 IXSH 24N60 IXSH 24N60A 2.2 2.7 V V
IC IC
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
Advantages mA mA nA V V Easy to mount with 1 screw (isolated mounting screw hole) Switching speed for high frequency applications High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
92809H(11/96)
1-2
gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % VGE = 15 V, VCE = 10 V
1.5 2.49
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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