Tip31a D

TIP31G, TIP31AG, TIP31BG,
TIP31CG (NPN),
TIP32G,TIP32AG, TIP32BG,
TIP32CG(PNP)
Complementary Silicon
Plastic Power Transistors
www.onsemi.com
Designed for use in general purpose amplifier and switching

applications.
Features
High Current Gain Bandwidth Product

Compact TO220 Package
These Devices are PbFree and are RoHS Compliant*
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
406080100 VOLTS,
40 WATTS
PNP
MAXIMUM RATINGS
Rating
Symbol
Collector Emitter Voltage

TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
Value
Unit
VCEO
1
BASE
VCB
EmitterBase Voltage
VEB
5.0
Vdc
IC
3.0
Adc
Collector Current Peak
Vdc
40
60
80
100
ICM
5.0
Adc
IB
1.0
Adc
Total Power Dissipation

@ TC = 25C
Derate above 25C
PD
Total Power Dissipation

@ TA = 25C
Derate above 25C
PD
Unclamped Inductive Load Energy

(Note 1)
40
0.32
W
W/C
2.0
0.016
W
W/C
32
mJ
TJ, Tstg
65 to + 150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
RqJA
62.5
C/W
Thermal Resistance, JunctiontoCase
RqJC
3.125
C/W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
September, 2015 Rev. 16
3
EMITTER
3
EMITTER
TO220
CASE 221A
STYLE 1
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
Semiconductor Components Industries, LLC, 2015
1
BASE
Base Current
Operating and Storage Junction Temperature Range
COLLECTOR
2,4
Vdc
40
60
80
100
CollectorBase Voltage
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
Collector Current Continuous
NPN
COLLECTOR
2,4
MARKING DIAGRAM
TIP3xxG
AYWW
TIP3xx
xx
A
Y
WW
G
= Device Code
= 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,
= Assembly Location
= Year
= Work Week
PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Publication Order Number:

TIP31A/D
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,

TIP32CG (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
VCEO(sus)
Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)
TIP31G, TIP32G, TIP31AG, TIP32AG
(VCE = 60 Vdc, IB = 0)
TIP31BG, TIP31CG, TIP32BG, TIP32CG
ICEO
Collector Cutoff Current

(VCE = 40 Vdc, VEB = 0)
TIP31G, TIP32G
(VCE = 60 Vdc, VEB = 0)
TIP31AG, TIP32AG
(VCE = 80 Vdc, VEB = 0)
TIP31BG, TIP32BG
(VCE = 100 Vdc, VEB = 0)
TIP31CG, TIP32CG
ICES
Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
40
60
80
100
mAdc
0.3
0.3
mAdc
200
200
200
200
1.0
25
10
50
1.2
1.8
3.0
20
mAdc
ON CHARACTERISTICS (Note 2)
hFE
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
CollectorEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 375 mAdc)
VCE(sat)
BaseEmitter On Voltage
(IC = 3.0 Adc, VCE = 4.0 Vdc)
VBE(on)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
SmallSignal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
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2

TIP32CG (PNP)
40 4.0
TC
30 3.0
20 2.0
TA
10 1.0
40
20
60
80
100
140
120
160
T, TEMPERATURE (C)
Figure 1. Power Derating
TURNON PULSE
APPROX
+11 V
VCC
RC
SCOPE
Vin
Vin 0
RB
VEB(off)
t1
Cjd << Ceb
t3
APPROX
+11 V
t1 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
Vin
t2
TURNOFF PULSE
4.0 V
DUTY CYCLE 2.0%

APPROX 9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
Figure 2. Switching Time Equivalent Circuit
2.0
IC/IB = 10
TJ = 25C
1.0
0.7
0.5
t, TIME (ms)
PD, POWER DISSIPATION (WATTS)
TC TA
tr @ VCC = 30 V
0.3
tr @ VCC = 10 V
0.1
0.07
0.05
0.03
0.02
0.03
td @ VEB(off) = 2.0 V
0.05
0.1
0.3
0.5
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. TurnOn Time
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3
3.0
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

TIP32CG (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
ZqJC(t) = r(t) RqJC

RqJC(t) = 3.125C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
1.0
0.2
1.0
0.5
2.0
5.0
t, TIME (ms)
10
20
50
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500
1.0 k
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
5.0
100ms
5.0ms
2.0
1.0
0.5
0.2
0.1
5.0
SECONDARY BREAKDOWN
LIMITED @ TJ 150C
THERMAL LIMIT @ TC = 25C
(SINGLE PULSE)
BONDING WIRE LIMIT
TIP31A, TIP32A
CURVES APPLY
TIP31B, TIP32B
BELOW RATED VCEO
TIP31C, TIP32C
1.0ms
10
20
50
100
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
300
ts
t, TIME (s)
1.0
tf @ VCC = 30 V
0.7
0.5
0.3
0.2
IB1 = IB2
IC/IB = 10
ts = ts - 1/8 tf
TJ = 25C
TJ = +25C
200
CAPACITANCE (pF)
3.0
2.0
tf @ VCC = 10 V
0.1
0.07
0.05
0.03
0.03
100
Ceb
70
50
0.05 0.07 0.1

0.2 0.3 0.5 0.7 1.0
2.0
30
0.1
3.0
Figure 6. TurnOff Time
Ccb
10
0.2 0.3 0.5
1.0
2.0 3.0 5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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4
20 30 40

TIP32CG (PNP)
hFE, DC CURRENT GAIN
300
100
70
50
TJ = 150C
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
VCE = 2.0 V
25C
-55C
30
10
7.0
5.0
0.5 0.7 1.0
0.03 0.05 0.07 0.1
0.3
3.0
2.0
TJ = 25C
1.6
IC = 0.3 A
1.2
0.4
0
1.0
V, TEMPERATURE COEFFICIENTS (mV/C)
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (A)
100
10-1
10-2
500 1000
*APPLIES FOR IC/IB hFE/2

TJ = -65C TO +150C
+2.0
+1.5
+1.0
+0.5
*qVC FOR VCE(sat)
0
-0.5
-1.0
qVB FOR VBE
-1.5
-2.0
-2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3 0.5
1.0
Figure 10. On Voltages
Figure 11. Temperature Coefficients
103
101
10
20
50
100 200
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMPS)
R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
0.6
102
5.0
+2.5
TJ = 25C
1.0
0.2
2.0
Figure 9. Collector Saturation Region
1.4
0.8
3.0 A
0.8
Figure 8. DC Current Gain
1.2
1.0 A
VCE = 30 V
TJ = 150C
100C
REVERSE
FORWARD
25C
10-3
-0.4 -0.3 -0.2 -0.1
ICES
0
+0.1 +0.2 +0.3 +0.4 +0.5 +0.6
2.0 3.0
107
VCE = 30 V
IC = 10 x ICES
106
IC ICES
105
104
IC = 2 x ICES
103
(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
102
20
40
60
80
100
120
140
160
VBE, BASEEMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (C)
Figure 12. Collector CutOff Region
Figure 13. Effects of BaseEmitter Resistance
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5

TIP32CG (PNP)
ORDERING INFORMATION
Device
Package
Shipping
TIP31G
TO220
(PbFree)
50 Units / Rail
TIP31AG
TO220
(PbFree)
50 Units / Rail
TIP31BG
TO220
(PbFree)
50 Units / Rail
TIP31CG
TO220
(PbFree)
50 Units / Rail
TIP32G
TO220
(PbFree)
50 Units / Rail
TIP32AG
TO220
(PbFree)
50 Units / Rail
TIP32BG
TO220
(PbFree)
50 Units / Rail
TIP32CG
TO220
(PbFree)
50 Units / Rail
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6

TIP32CG (PNP)
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AH
T
B
SEATING
PLANE
F
T
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
Q
1 2 3
H
K
Z
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and the

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed
at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each
customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:
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Phone: 3036752175 or 8003443860 Toll Free USA/Canada
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For additional information, please contact your local
Sales Representative
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TIP31G, TIP31AG, TIP31BG,

Designed for use in general purpose amplifier and switching

High Current Gain Bandwidth Product

Collector Emitter Voltage

Collector Current Peak

Total Power Dissipation

Total Power Dissipation

Unclamped Inductive Load Energy

Thermal Resistance, JunctiontoAmbient

Thermal Resistance, JunctiontoCase

September, 2015 Rev. 16

Semiconductor Components Industries, LLC, 2015

Operating and Storage Junction Temperature Range

Publication Order Number:

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,

Collector Cutoff Current

Collector Cutoff Current

Emitter Cutoff Current

SmallSignal Current Gain

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,

Figure 1. Power Derating

DUTY CYCLE 2.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

Figure 2. Switching Time Equivalent Circuit

PD, POWER DISSIPATION (WATTS)

IC, COLLECTOR CURRENT (AMP)

Figure 3. TurnOn Time

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,

ZqJC(t) = r(t) RqJC

Figure 4. Thermal Response

IC, COLLECTOR CURRENT (AMP)

There are two limitations on the power handling ability of

Figure 5. Active Region Safe Operating Area

0.05 0.07 0.1

Figure 6. TurnOff Time

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,

hFE, DC CURRENT GAIN

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

V, TEMPERATURE COEFFICIENTS (mV/C)

VBE @ VCE = 2.0 V

0.2 0.3 0.5

IC, COLLECTOR CURRENT (A)

*APPLIES FOR IC/IB hFE/2

*qVC FOR VCE(sat)

0.2 0.3 0.5

IC, COLLECTOR CURRENT (AMP)

Figure 10. On Voltages

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMPS)

R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

Figure 9. Collector Saturation Region

Figure 8. DC Current Gain

+0.1 +0.2 +0.3 +0.4 +0.5 +0.6

(TYPICAL ICES VALUES

VBE, BASEEMITTER VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (C)

Figure 12. Collector CutOff Region

Figure 13. Effects of BaseEmitter Resistance