Birla Institute of Technology and Science-Pilani

K K Birla Goa Camous

First Semester (2023-2024) I End-Semester Examination I Electronic Devices (EEE/ECE/INSTR F214)
Date: 13-12-2023 I Time: 180 mlns I Maximum Marks: 80 I Closed Book
Name: ID:

Instructions: -
(i) ~nsw~r all the que~tions (ii) Use !he blue/black pen only (iii) Write the
answer in the space provided {iv) Answer
wntten without S.I. unit or wrong unit will be marked as wrong and (iv)
Show all the relevant steps.
Recheck Request
•I

Average: 27/80

Question 1
(6+4)1
The doping levels of N- and P-type layers, to be utilized for designing
an IC diode are as follows: No= 102
cm-3, NA= 10-tS cm-3. IfLN =LP= i µm and doping dependent mobili 2
ties are J..Ln = 350 cm N-s and µp=lOO
cm2N-s Determine the area of the P~N junction so that the turn-on voltage
of the designed diode will be 0.7 V
if the current rating of the diode is to be specified as 1 mA at room temper
ature. Also, draw the well labeled
energy band diagram at equilibrium and specify the relative differeny~s

2-1 -"1-p- ::.- •½, e t.J-j 19-T ' ;

between the different energies.

1-,!;, ::: A-t .,._; i. p n.,

__-:;- ---
\ .
4' N.A-
DY")
°1

O' 64 5S

l~ )

p
 •

"
,~
~ - ··•--:·

Question 2 Technological parameters of a MOS capacitor are given in table below, together with the values
0 f the relevant physical parameters •
Parameter Value Parameter Value
Substrate doping concentration, NA 7 x 1016 cm-3 Enernv gap Ea. 1.12 eV
Gate-oxide thickness tox 30nm Thermal voltW?e (kT/a) at 300 K 0.026 V
Effective interface density Qi 10 10 qC.cm·2 Oxide permittivity, (i.e. Erf:ox) 3.45 x 10-u F/m
Type of the gate N+ polysilicon Silicon permittivity, (i.e. Erf:s) °
1.04 x 10-1 F/m
Work function of poly gate 4.05 eV Electron affinity of Si, Xs 4.05 eV
Intrinsic carrier concentration ni 1.02 x I 010 cm-3

a) Determ~e the value of the flat-band voltage. (2)

o' lt I V
I cp'FYJ - [Ys -t!:1-t: 1 r)
-o·<=t+V 2-

I
• l. • ' .• i ,, ' •

b) Calculate the charge density at the onset of strong inversion. Identify the type and origin of this
charge. (3)

J_ No., JA0 i:L =- ½ J._ N 4 (_241 f')

2-

·1, 's 8 X l o-S Cf rm ?-

c) Calculate the value of the threshold voltage. (2)

- ('.)' 9 i 4 -t( • 8 t D,:8i

l'f {'x 10~

d) Calculate the charge density in the inversion layer at VG= 5 V. (3)

(L9-y -lJ-j Ln X
- (s 1, o x t • 1.r- x \ o,--3

- 4·s ½x I o~ '+ c_ / L
Question. 3 (a) The measured 1-V characteristics of a Si diode maintained at room temperature is crud~
sketched 1n the figure shown below. Norudealities exhibited ly
by the characteristics are identified by capital
letters. Identify the cause of each nonideal regime shown in the
J-V characteristics. Note: The current scale is
logarithmic for forward bias and linear for the reverse bias. The
answer must be specified in the format say
A: Low level injection. • (3)
....,, A: /+vo -1.f l.N\ ~ Oy-
ciov iJ¾,
T ~ ~ - (b~ m'\-l Villy \ CA
D: , ~
'1
"' E: .l.t» ~ •
F: • p ~ilJ~
Ld a ~ l d- l~ ~)
(b) You are given a metal semiconductor at room temperature
in which the work-function of the metal equals
the electron affinity of the semiconductor plus 3kBT (i.e. <l>M
= x + 3kaT). Assume the Fermi level in the
semiconductor is 3kBT above Ev and the semiconductor has a bandg
ap of 1 eV. (1+3+3)
i) ls the semiconductor n-type or p-type or intrinsic?

ii) What is the numerical value of Vb1?

::- --c{)' YY) ::_f f rt-: ] - ie_f6.8 j- l1 rt-3 ~ 1)

½~ l tc..e,
o, ½ V
Draw the energy band diagram? Is the metal contact to the semic
iii) onductor is ohmic or
rectifying? - - - - - f-c_
I I
 ~~c==:~=::~=~~~~~;;~;;;~;;;;.;;;~~~. -·
,-~'!!!I.

....---

[lli
"':''

uestion 4
A high frequency MOS C - V characteristic is measured below. An~~e~ the tioiiow1?g •
~ues
tion assuming that
·the semiconductor is silicon at room temperature. Assume the perm1tt1v1ty of the oxide is 3.9.

C/A
------ ·1.15xto'"'F/cma1

0.38 x 10°"' F/cm2 ----------

(a) Is the semiconductor N-type or P-type? Explain your answer.

(b) What is the thickness of the oxide?
(c) What is the thickness of the depletion layer in inversion?
(d)--Determine the deping conccntratien ef the substrate,

(b) =- ,, l f9 X J o·-6
(_c)_ 1_ 1
C

-
I

~.
=--- 0 • 5 t;/- 'f.. I D f2/&wi

l/·&'A i·fS'-1 ')(tt>.-1~

0 S~ XI o-%
vJ1 =:- l •4 n 'n1
Question 5 A p-channel MOSFET has a p+ polysilicon gate, a substrate doping ofNo=2x l0 16
cm·3, an oxide
thickness oftox-18 run, and an effective interface charge density of Qi=l0 11 qC.cm·2 . (a) Calculate the threshold
voltage. (b) If the required threshold voltage is VT =-0.40 ,v. Determine the type and the change in doping
concentration necessary to achieve this specification. (c) Compare and comment on the state of the MOS system
using the energy band diagram when Qi= 0 C cm·2 and Qi=l0 11 qC.cm·2?
(6+4)
Answer:

Refer example 6.1 of Streetman textbook

 . .

! . .- . •. , - I

Question 6 The transconductance of an n-channel MOSFET is found to be gm = did d Vas = 1.25 mA/V when
measured at VDS = 50 mV. The threshold voltage is Vr= 0.3 V. (a) Determine K,,. (b) What is the current at Vas
= 0.8V and Vos= 50mV. (c) Determine the current at Vos= 0.8V and Vos= 1.5 V. (3+2+1)

.
-·- K:::... 1• ==- ~.r Tl) A--/ v-,
o~o_r

Q?) -
f""'I k__[ r ~ --- tJ-~ L-9-c,U J
·-- b •}_s~ 1o---'-f •.

(_G) -Lo r;_ )_kr)lo~KJ

L-
cl}-~ ~t.J-r )~
- 2-
-- !s' I Y X {o''.3
 ~ti
5
.---Tw-o-lo_n_c~hann-e~l-n--typ-e~M:-;::;O~S~FE~T~s~(M~li--::an~d~M2~)~~;:::-eAd~es~ign~~ed~b~yt1thhfe~d~e;vicic;e~em~gt~·~n;eer;_ s~uccl~ltltha;tttiitb;ie ~\
~~te do:ing in Ml < M2. To check the perfonnance of the transistor, the device engmeer mve8tigates !11e
threshold voltage (Vt1t1@Ml and Vth2@M2) and subthreshold swing (SS1@ ~1 and S82 @Ml)~ function
of gate length. Plot the typical behavior of Vth and S-swing observed by the engineer for both the devices when
the gate length is scaled down.

M2- (\{ \
1\-1 , £,.S

._

o·
\t·
Question 7 Consider a process technology for which W = Lmm = 0.4 µm, tox = 8 nm, Jln = 450 cm N-s and VT= 0.7 V.
2

Find (a) Cox and Kn (b) For a MOSFET with W/L = 8mm/0.8 mm, calculate the minimum Vos needed to operate the
transistor in the saturation region with a de current of 100 µA. (c) For the device in part b, find the Vos required to to
cause the device to operate as 1000 Ohm resistor for very small Vos. (4+3+3)

Cox ~.,,.. ~>t -:::.- 3•L\ ~x, 0-1' :. l4., 5 2- x,0- F/ rr/) 2-
3
•

~)(. ~x \ or-4
L-0 x i,0 -:::- Lt _0J X 4 ,31- 'X I =- I 1 Y }..{ / \/ 1- ·
L-
Q,) ½ -:::---_L Lo'X tO t ~--~) t.J_~ - ~-h-1 =- b •3l---V
J- L- ., '1)·1/V •
U-DS, D·· 2)1--'V •.

(c.,) Jc:::.._ I ::: e •~2-'V •

C-Oy_ 0/ 0 (_ lJ-- :::. I' 2-'l--'V
Question 8 The characteristic feature ofa P:-N junction -is to be used as a voltage-dependent capacitor (also
called as varactor). This property is used for the tunihg element in microwave circuits. If the doping
20 3
concentrations in the P-type and N+ type regions are known: NA= 10 cm- and No= 10 cm- , respectively.
18 3

a) Design the varactor (determine,the needed junction area) so that the maximum capacitance is Cmax
= 30 pF. (5)
b) Calculate the varactor sensitivity (dC/dVR) at VR = 5 V. (5)

O>--p~ a., p,.-'17

0 UiL
~.z_ lLi ~(!1~ P)
~l2--
- l' os-V,
}_-

uY\._A_x -- 7ry_ 2-½ tJ2u Pr {orr t--l p 'r >- ,J A-- LI )

-A - 3o lD~'L f2- z_ l' o <:)- XI 1) ,_,~ L , l~

~- 8 f--/ /y(\ ,}_
 i,ji . )

lxJf = "'-) ')_~ l -t !¾__)

~A-

ti,A,·
l ,~ ~~ )~2 J/L .

All the best... I Ir

Formula Sheet

r=pa +qb+ sc

d = a/(.fr + Ii'- + /2)112 2d sin 8 = n). ,_ 1

Po - N,, -2 N, + y(N• -2 Nd} 2
+ n2
,
A= h/p = h/mv
p =hf>.= (h/2'11)(2'1f/A) = Mc 1
T=---
" a,,.(no + Po)

1
f{.E) = 1 + e(E-E,)/kT p = n;e(E,-F, ,)/kT

f( E)
e
=
1
1
+ (!~-E,)/ltl'
QI e-<E,-E,J/k.T

6n = 6p = gop-r,,

1 _ I( E) = 1 _ 1 .Qit ,r<E,-E.>t"T
dn(x) dp(x)
J\ " 1+ e(E.-E,)/kT
4>,(x) = -D~
cf,,.(x) - D,. dx dx

_ (2-rrm:tT)3/l
Ne - 2 . .. _ . dp(x)
h2 dn(x)
J~(dtff.) - +qD,, dx J,(diff.) = -qD, .d.t