IRF730

N-CHANNEL 400V - 0.75Ω - 5.5A TO-220

PowerMESH™II MOSFET

TYPE VDSS RDS(on) ID

IRF730 400 V <1Ω 5.5 A

■ TYPICAL RDS(on) = 0.75Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
3 SOURCE
2 DRAIN
1GATE
DESCRIPTION TO-220
The PowerMESH™II is the evolution of the first gen-
eration of MESH OVERLAY™. The layout refine-
ments introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate INTERNAL SCHEMATIC DIAGRAM
charge and ruggedness.

APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS

■ UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 400 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 400 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuos) at TC = 25°C 5.5 A
ID Drain Current (continuos) at TC = 100°C 3.5 A
IDM (●) Drain Current (pulsed) 22 A
PTOT Total Dissipation at TC = 25°C 100 W
Derating Factor 0.8 W/°C
dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns
Tstg Storage Temperature –65 to 150 °C
Tj Max. Operating Junction Temperature 150 °C
(●) Pulse width limited by safe operating area (1)ISD ≤5.5A, di/dt ≤90A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX.

March 2001 1/8

This datasheet has been downloaded from http://www.digchip.com at this page

IRF730

THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 5.5 A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy 300 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA, VGS = 0 400 V
Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C 50 µA
IGSS Gate-body Leakage VGS = ±20V ±100 nA
Current (VDS = 0)

Electrical Characteristcs
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2 3 4 V
RDS(on) Static Drain-source On VGS = 10V, ID = 3 A 0.75 1 Ω
Resistance

ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, 5.5 A

VGS = 10V

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max, 2.9 S
ID = 3 A
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 530 pF
Coss Output Capacitance 90 pF
Reverse Transfer
Crss 15 pF
Capacitance

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 IRF730

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 200V, ID = 3 A 11 ns
RG = 4.7Ω VGS = 10V
tr Rise Time (see test circuit, Figure 3) 15 ns

Qg Total Gate Charge VDD = 320V, ID =5.5A, 18 24 nC

Qgs Gate-Source Charge VGS = 10V 4 nC
Qgd Gate-Drain Charge 8.5 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Off-voltage Rise Time Vclamp =320V, ID = 7 A 8 ns
tf Fall Time RG = 4.7Ω, VGS = 10V 12 ns
tc Cross-over Time (see test circuit, Figure 5) 23 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 6 A
ISDM (2) Source-drain Current (pulsed) 24 A
VSD (1) Forward On Voltage ISD = 5.5 A, VGS = 0 1.6 V
trr Reverse Recovery Time ISD = 7 A, di/dt = 100A/µs, 280 ns
Qrr Reverse Recovery Charge VDD = 100V, Tj = 150°C 1.4 µC
IRRM Reverse Recovery Current (see test circuit, Figure 5) 10 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.

Safe Operating Area Thermal Impedence

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IRF730

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

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 IRF730

Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

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IRF730

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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 IRF730

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151

E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7
L6 L4
P011C

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IRF730

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