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    N-CHANNEL 100V - 0.055 - 22A TO-220 Low Gate Charge Stripfet™ Ii Power Mosfet

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    N-CHANNEL 100V - 0.055 - 22A TO-220 Low Gate Charge Stripfet™ Ii Power Mosfet

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    IRF540

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    N-CHANNEL 100V - 0.055 - 22A TO-220 Low Gate Charge Stripfet™ Ii Power Mosfet

    Uploaded by

    Code Main Project

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 8

    IRF540

    N-CHANNEL 100V - 0.055 Ω - 22A TO-220


    LOW GATE CHARGE STripFET™ II POWER MOSFET

    TYPE VDSS RDS(on) ID

    IRF540 100 V <0.077 Ω 22 A


    ■ TYPICAL RDS(on) = 0.055Ω
    ■ EXCEPTIONAL dv/dt CAPABILITY
    ■ 100% AVALANCHE TESTED
    ■ LOW GATE CHARGE
    ■ APPLICATION ORIENTED 2
    3

    CHARACTERIZATION 1

    TO-220
    DESCRIPTION
    This MOSFET series realized with STMicroelectronics
    unique STripFET process has specifically been designed
    to minimize input capacitance and gate charge. It is
    therefore suitable as primary switch in advanced high-
    efficiency, high-frequency isolated DC-DC converters for
    Telecom and Computer applications. It is also intended INTERNAL SCHEMATIC DIAGRAM
    for any applications with low gate drive requirements.

    APPLICATIONS
    ■ HIGH-EFFICIENCY DC-DC CONVERTERS

    ■ UPS AND MOTOR CONTROL

    Ordering Information
    SALES TYPE MARKING PACKAGE PACKAGING
    IRF540 IRF540& TO-220 TUBE

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    VDS Drain-source Voltage (VGS = 0) 100 V
    VDGR Drain-gate Voltage (RGS = 20 kΩ) 100 V
    VGS Gate- source Voltage ± 20 V
    ID Drain Current (continuous) at TC = 25°C 22 A
    ID Drain Current (continuous) at TC = 100°C 15 A
    IDM(•) Drain Current (pulsed) 88 A
    Ptot Total Dissipation at TC = 25°C 85 W
    Derating Factor 0.57 W/°C
    dv/dt (1) Peak Diode Recovery voltage slope 9 V/ns
    EAS (2) Single Pulse Avalanche Energy 220 mJ
    Tstg Storage Temperature
    -55 to 175 °C
    Tj Max. Operating Junction Temperature
    (•) Pulse width limited by safe operating area. 1) ISD ≤22A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX
    (2) Starting T j = 25 oC, ID = 12A, VDD = 30V

    February 2003 1/8


    NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &
    IRF540

    THERMAL DATA
    Rthj-case Thermal Resistance Junction-case Max 1.76 °C/W
    Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
    Tl Maximum Lead Temperature For Soldering Purpose Typ 300 °C

    ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)


    OFF
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    Drain-source ID = 250 µA, VGS = 0 100 V
    V(BR)DSS
    Breakdown Voltage

    IDSS Zero Gate Voltage VDS = Max Rating 1 µA


    Drain Current (VGS = 0) VDS = Max Rating TC = 125°C 10 µA

    Gate-body Leakage VGS = ± 20V ±100 nA


    IGSS
    Current (VDS = 0)

    ON (1)
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2 3 4 V

    Static Drain-source On VGS = 10 V ID = 11 A 0.055 0.077 Ω


    RDS(on)
    Resistance

    DYNAMIC
    Symbol Parameter Test Conditions Min. Typ. Max. Unit

    gfs (*) Forward Transconductance VDS =25 V ID = 11 A 20 S

    Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 870 pF


    Coss Output Capacitance 125 pF
    Crss Reverse Transfer 52 pF
    Capacitance

    2/8
    IRF540

    ELECTRICAL CHARACTERISTICS (continued)


    SWITCHING ON
    Symbol Parameter Test Conditions Min. Typ. Max. Unit

    td(on) Turn-on Delay Time VDD = 50 V ID = 12 A 60 ns


    tr Rise Time RG = 4.7 Ω VGS = 10 V 45 ns
    (Resistive Load, Figure 3)
    Qg Total Gate Charge VDD= 80 V ID= 22 A VGS= 10V 30 41 nC
    Qgs Gate-Source Charge 6 nC
    Qgd Gate-Drain Charge 10 nC

    SWITCHING OFF
    Symbol Parameter Test Conditions Min. Typ. Max. Unit

    td(off) Turn-off Delay Time VDD = 50 V ID = 12 A 50 ns


    tf Fall Time RG = 4.7Ω, VGS = 10 V 20 ns
    (Resistive Load, Figure 3)

    SOURCE DRAIN DIODE


    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    ISD Source-drain Current 22 A
    ISDM (•) Source-drain Current (pulsed) 88 A

    VSD (*) Forward On Voltage ISD = 22 A VGS = 0 1.3 V

    trr Reverse Recovery Time ISD = 22 A di/dt = 100A/µs 100 ns


    Qrr Reverse Recovery Charge VDD = 30 V Tj = 150°C 375 nC
    IRRM Reverse Recovery Current (see test circuit, Figure 5) 7.5 A
    (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
    (•)Pulse width limited by safe operating area.

    Safe Operating Area Thermal Impedance

    3/8
    IRF540

    Output Characteristics Transfer Characteristics

    Transconductance Static Drain-source On Resistance

    Gate Charge vs Gate-source Voltage Capacitance Variations

    4/8
    IRF540

    Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

    Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature

    . .

    5/8
    IRF540

    Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

    Fig. 3: Switching Times Test Circuits For Resistive Fig. 4: Gate Charge test Circuit
    Load

    Fig. 5: Test Circuit For Inductive Load Switching


    And Diode Recovery Times

    6/8
    IRF540

    TO-220 MECHANICAL DATA

    mm. inch.
    DIM.
    MIN. TYP. MAX. MIN. TYP. TYP.
    A 4.4 4.6 0.173 0.181
    C 1.23 1.32 0.048 0.051
    D 2.40 2.72 0.094 0.107
    E 0.49 0.70 0.019 0.027
    F 0.61 0.88 0.024 0.034
    F1 1.14 1.70 0.044 0.067
    F2 1.14 1.70 0.044 0.067
    G 4.95 5.15 0.194 0.203
    G1 2.40 2.70 0.094 0.106
    H2 10 10.40 0.393 0.409
    L2 16.40 0.645
    L3 28.90 1.137
    L4 13 14 0.511 0.551
    L5 2.65 2.95 0.104 0.116
    L6 15.25 15.75 0.600 0.620
    L7 6.20 6.60 0.244 0.260
    L9 3.50 3.93 0.137 0.154
    DIA 3.75 3.85 0.147 0.151

    7/8
    IRF540

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
    of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
    by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
    to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
    authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

    The ST logo is registered trademark of STMicroelectronics


     2003 STMicroelectronics - All Rights Reserved

    All other names are the property of their respective owners.

    STMicroelectronics GROUP OF COMPANIES


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    http://www.st.com

    8/8

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