Scribd Logo
Upload

Welcome to Scribd!

  • 108 views

    Data Sheet

    Uploaded by

    patrick1009
    This document provides specifications for an N-channel 75V MOSFET with a typical on-resistance of 0.018 ohms and continuous drain current rating of 40 amps. It includes maximum ratings, electrical characteristics, thermal properties, and application information. The MOSFET uses a strip-based process to achieve high density and low on-resistance. It is packaged in a surface mount DPAK package suitable for high current switching applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Data Sheet

    Uploaded by

    patrick1009
    108 views12 pages
    This document provides specifications for an N-channel 75V MOSFET with a typical on-resistance of 0.018 ohms and continuous drain current rating of 40 amps. It includes maximum ratings, electrical characteristics, thermal properties, and application information. The MOSFET uses a strip-based process to achieve high density and low on-resistance. It is packaged in a surface mount DPAK package suitable for high current switching applications.

    Original Description:

    Data

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for an N-channel 75V MOSFET with a typical on-resistance of 0.018 ohms and continuous drain current rating of 40 amps. It includes maximum ratings, electrical characteristics, thermal properties, and application information. The MOSFET uses a strip-based process to achieve high density and low on-resistance. It is packaged in a surface mount DPAK package suitable for high current switching applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    108 views12 pages

    Data Sheet

    Uploaded by

    patrick1009
    This document provides specifications for an N-channel 75V MOSFET with a typical on-resistance of 0.018 ohms and continuous drain current rating of 40 amps. It includes maximum ratings, electrical characteristics, thermal properties, and application information. The MOSFET uses a strip-based process to achieve high density and low on-resistance. It is packaged in a surface mount DPAK package suitable for high current switching applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 12

    STD45NF75

    N-CHANNEL 75V - 0.018 Ω -40A DPAK


    STripFET™ II POWER MOSFET

    TYPE VDSS RDS(on) ID

    STD45NF75 75 V <0.024 Ω 40 A(**)


    ■ TYPICAL RDS(on) = 0.018 Ω
    ■ 100% AVALANCHE TESTED
    ■ GATE CHARGE MINIMIZED
    ■ SURFACE-MOUNTING DPAK (TO-252) 3
    POWER PACKAGE IN TAPE & REEL 1
    (SUFFIX “T4") DPAK
    TO-252
    DESCRIPTION (Suffix “T4”)
    This Power MOSFET is the latest development of
    STMicroelectronis unique "Single Feature Size™"
    strip-based process. The resulting transistor
    shows extremely high packing density for low on-
    resistance, rugged avalanche characteristics and
    less critical alignment steps therefore a INTERNAL SCHEMATIC DIAGRAM
    remarkable manufacturing reproducibility.

    APPLICATIONS
    ■ HIGH CURRENT, SWITCHING

    APPLICATIONS

    Ordering Information
    SALES TYPE MARKING PACKAGE PACKAGING
    STD45NF75T4 D45NF75 DPAK TAPE & REEL

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    VDS Drain-source Voltage (VGS = 0) 75 V
    VDGR Drain-gate Voltage (RGS = 20 kΩ) 75 V
    VGS Gate- source Voltage ± 20 V
    ID(**) Drain Current (continuous) at TC = 25°C 40 A
    ID Drain Current (continuous) at TC = 100°C 30 A
    IDM(•) Drain Current (pulsed) 160 A
    Ptot Total Dissipation at TC = 25°C 100 W
    Derating Factor 0.67 W/°C
    dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns
    EAS (2) Single Pulse Avalanche Energy 500 mJ
    Tstg Storage Temperature
    -55 to 175 °C
    Tj Operating Junction Temperature
    (•) Pulse width limited by safe operating area. (1) ISD ≤40A, di/dt ≤800A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
    (**) Current Limited by Package (2) Starting Tj = 25 oC, ID = 20 A, VDD = 40V
    April 2004 1/12
    STD45NF75

    THERMAL DATA
    Rthj-case Thermal Resistance Junction-case Max 1.5 °C/W
    Rthj-pcb Thermal Resistance Junction-pcb Max see curve on page 6 °C/W

    Tl Maximum Lead Temperature For Soldering Purpose 275 °C


    (for 10 sec. 1.6 mm from case)

    ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)


    OFF
    Symbol Parameter Test Conditions Min. Typ. Max. Unit

    V(BR)DSS Drain-source ID = 250 µA VGS = 0 75 V


    Breakdown Voltage

    IDSS Zero Gate Voltage VDS = Max Rating 1 µA


    Drain Current (VGS = 0) VDS = Max Rating TC = 125°C 10 µA

    Gate-body Leakage VGS = ± 20 V ±100 nA


    IGSS
    Current (VDS = 0)

    ON (*)
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2 4 V

    RDS(on) Static Drain-source On VGS = 10 V ID = 20 A 0.018 0.024 Ω


    Resistance

    DYNAMIC
    Symbol Parameter Test Conditions Min. Typ. Max. Unit

    gfs (*) Forward Transconductance VDS = 25 V ID = 20 A 50 S

    Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1760 pF


    Coss Output Capacitance 360 pF
    Crss Reverse Transfer 140 pF
    Capacitance

    2/12
    STD45NF75

    ELECTRICAL CHARACTERISTICS (continued)


    SWITCHING ON
    Symbol Parameter Test Conditions Min. Typ. Max. Unit

    td(on) Turn-on Delay Time VDD = 37 V ID = 20 A 15 ns


    tr Rise Time RG = 4.7 Ω VGS = 10 V 40 ns
    (Resistive Load, Figure 3)
    Qg Total Gate Charge VDD=60 V ID=40A VGS= 10V 60 80 nC
    Qgs Gate-Source Charge 13 nC
    Qgd Gate-Drain Charge (see test circuit, Figure 4) 23 nC

    SWITCHING OFF
    Symbol Parameter Test Conditions Min. Typ. Max. Unit

    td(off) Turn-off Delay Time VDD = 37 V ID = 20 A 55 ns


    tf Fall Time RG = 4.7Ω, VGS = 10 V 12 ns
    (Resistive Load, Figure 3)

    SOURCE DRAIN DIODE


    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    ISD Source-drain Current 40 A
    ISDM (•) Source-drain Current (pulsed) 160 A

    VSD (*) Forward On Voltage ISD = 40 A VGS = 0 1.5 V

    trr Reverse Recovery Time ISD = 40 A di/dt = 100A/µs 120 ns


    Qrr Reverse Recovery Charge VDD = 30 V Tj = 150°C 410 nC
    IRRM Reverse Recovery Current (see test circuit, Figure 5) 7.5 A
    (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
    (•)Pulse width limited by safe operating area.

    Safe Operating Area Thermal Impedance

    3/12
    STD45NF75

    Output Characteristics Transfer Characteristics

    Transconductance Static Drain-source On Resistance

    Gate Charge vs Gate-source Voltage Capacitance Variations

    4/12
    STD45NF75

    Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

    Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.

    .
    Power Derating vs Tc .
    Max Id Current vs Tc.

    5/12
    STD45NF75

    Thermal Resistance Rthj-a vs PCB Copper Area Max Power Dissipation vs PCB Copper Area

    Allowable Iav vs. Time in Avalanche

    The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
    under the following conditions:

    PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)


    EAS(AR) = PD(AVE) * tAV

    Where:
    IAV is the Allowable Current in Avalanche
    PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
    tAV is the Time in Avalanche

    To derate above 25 oC, at fixed IAV, the following equation must be applied:

    IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)


    Where:
    Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV .

    6/12
    STD45NF75

    SPICE THERMAL MODEL

    Parameter Node Value

    CTHERM1 7-6 6 * 10-4


    CTHERM2 6-5 8 * 10-3
    CTHERM3 5-4 2 * 10-2
    CTHERM4 4-3 6 * 10-2
    CTHERM5 3-2 9.65 * 10-2
    CTHERM6 2-1 6 * 10-1

    RTHERM1 7-6 0.045


    RTHERM2 6-5 0.105
    RTHERM3 5-4 0.150
    RTHERM4 4-3 0.225
    RTHERM5 3-2 0.375
    RTHERM6 2-1 0.600

    7/12
    STD45NF75

    Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

    Fig. 3: Switching Times Test Circuits For Resistive Fig. 3.1: Switching Time Waveform
    Load

    Fig. 4: Gate Charge Test Circuit Fig. 4.1: Gate Charge Test Waveform

    8/12
    STD45NF75

    Fig. 5: Diode Switching Test Circuit Fig. 5.1: Diode Recovery Times Waveform

    9/12
    STD45NF75

    TO-252 (DPAK) MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.

    A 2.2 2.4 0.086 0.094

    A1 0.9 1.1 0.035 0.043

    A2 0.03 0.23 0.001 0.009

    B 0.64 0.9 0.025 0.035

    B2 5.2 5.4 0.204 0.212

    C 0.45 0.6 0.017 0.023

    C2 0.48 0.6 0.019 0.023

    D 6 6.2 0.236 0.244

    E 6.4 6.6 0.252 0.260

    G 4.4 4.6 0.173 0.181

    H 9.35 10.1 0.368 0.397

    L2 0.8 0.031

    L4 0.6 1 0.023 0.039

    H
    A

    C2

    A1

    DETAIL "A"
    C

    A2

    L2 D
    DETAIL "A"
    B
    3
    =

    =
    B2

    G
    E

    2
    =

    =
    1

    L4
    0068772-B

    10/12
    STD45NF75

    11/12
    STD45NF75

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
    of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
    by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
    to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
    authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

    The ST logo is registered trademark of STMicroelectronics


    All other names are the property of their respective owners.

    © 2004 STMicroelectronics - All Rights Reserved

    STMicroelectronics GROUP OF COMPANIES


    Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
    Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
    www.st.com

    12/12

    You might also like