P6NC60FP

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com
STP6NC60 - STP6NC60FP
STB6NC60-1
N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK
PowerMESH™II MOSFET

TYPE VDSS RDS(on) ID

STP(B)6NC60(-1) 600 V < 1.2 Ω 6A


STP6NC60FP 600 V < 1.2 Ω 6A
■ TYPICAL RDS(on) = 1.0 Ω 3
■ EXTREMELY HIGH dv/dt CAPABILITY 1
2

■ 100% AVALANCHE TESTED TO-220 TO-220FP


■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
3
DESCRIPTION 12

The PowerMESH™II is the evolution of the first I2PAK


generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
INTERNAL SCHEMATIC DIAGRAM
ing edge for what concerns swithing speed, gate
charge and ruggedness.

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE


POWER SUPPLIES AND MOTOR DRIVES

ABSOLUTE MAXIMUM RATINGS


Symbol Parameter Value Unit
STP(B)6NC60(-1) STP6NC60FP
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuos) at TC = 25°C 6 6(*) A
ID Drain Current (continuos) at TC = 100°C 3.8 3.8(*) A
IDM (●) Drain Current (pulsed) 24 24(*) A
PTOT Total Dissipation at TC = 25°C 125 40 W
Derating Factor 1.0 0.32 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
VISO Insulation Withstand Voltage (DC) - 2500 V
Tstg Storage Temperature –65 to 150 °C
Tj Max. Operating Junction Temperature 150 °C
(•)Pulse width limited by safe operating area
(1)ISD ≤6A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
May 2001 1/10
STP6NC60/FP/STB6NC60-1
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THERMAL DATA
TO-220/I2PAK TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.0 3.1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 6 A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy 320 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)


OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA, VGS = 0 600 V
Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C 50 µA
IGSS Gate-body Leakage VGS = ±30V ±100 nA
Current (VDS = 0)

ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2 3 4 V
RDS(on) Static Drain-source On VGS = 10V, ID = 3 A 1.0 1.2 Ω
Resistance

ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, 6 A


VGS = 10V

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max, 6.5 S
ID = 3A
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1020 pF
Coss Output Capacitance 145 pF
Reverse Transfer
Crss 21 pF
Capacitance

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STP6NC60/FP/STB6NC60-1
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ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 300 V, ID = 3 A 16 ns
RG = 4.7Ω VGS = 10 V
tr Rise Time (see test circuit, Figure 3) 14 ns

Qg Total Gate Charge VDD = 480V, ID = 6 A, 35 45.5 nC


VGS = 10V
Qgs Gate-Source Charge 5.5 nC
Qgd Gate-Drain Charge 17.2 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff) Off-voltage Rise Time VDD = 480V, ID = 6 A, 13 ns
RG = 4.7Ω, VGS = 10V
tf Fall Time 16 ns
(see test circuit, Figure 5)
tc Cross-over Time 23 ns

SOURCE DRAIN DIODE


Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 6 A
ISDM (2) Source-drain Current (pulsed) 24 A
VSD (1) Forward On Voltage ISD = 6 A, VGS = 0 1.6 V
trr Reverse Recovery Time ISD = 6 A, di/dt = 100A/µs 450 ns
Qrr VDD = 100V, Tj = 150°C
Reverse Recovery Charge 2.9 µC
(see test circuit, Figure 5)
IRRM Reverse Recovery Current 13 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.

Safe Operating Area for TO-220/I2PAK Safe Operating Area for TO-220FP

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STP6NC60/FP/STB6NC60-1
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Thermal Impedence for TO-220/I2PAK Thermal Impedence for TO-220FP

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

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STP6NC60/FP/STB6NC60-1
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Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

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STP6NC60/FP/STB6NC60-1
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching


And Diode Recovery Times

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STP6NC60/FP/STB6NC60-1
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TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151

E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7
L6 L4
P011C

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STP6NC60/FP/STB6NC60-1
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TO-220FP MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

¯
F

G1

G
H

F2

1 2 3
L5
L2 L4

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STP6NC60/FP/STB6NC60-1
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TO-262 (I2PAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531

L1 3.48 3.78 0.137 0.149

L2 1.27 1.4 0.050 0.055


C
A

A1
C2

B2
B

e
E

L1

L2 D L
P011P5/E

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics

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