GD100HFL120C2S IGBT Module

STARPOWER
SEMICONDUCTOR IGBT

GD100HFL120C2S
Molding Type Module

1200V/100A 2 in one-package

General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

Features
 Low VCE(sat) SPT+ IGBT technology
 10μs short circuit capability
 VCE(sat) with positive temperature coefficient
 Low inductance case
 Fast & soft reverse recovery anti-parallel FWD
 Isolated copper baseplate using DBC technology Equivalent Circuit Schematic

Typical Applications
 Inverter for motor drive
 AC and DC servo drive amplifier
 Uninterruptible power supply

©2011 STARPOWER Semiconductor Ltd. 2/25/2011 1/9 Rev.D

GD100HFL120C2S IGBT Module

Absolute Maximum Ratings TC=25℃ unless otherwise noted

Symbol Description GD100HFL120C2S Units
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25℃ 200
IC A
@ TC=100℃ 100
ICM(1) Pulsed Collector Current tp=1ms 200 A
IF Diode Continuous Forward Current 100 A
IFM Diode Maximum Forward Current tp=1ms 200 A
PD Maximum Power Dissipation @ Tj=175℃ 1000 W
Tj Maximum Junction Temperature 175 ℃
TSTG Storage Temperature Range -40 to +125 ℃
VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V
Mounting Power Terminal Screw:M6 2.5 to 5.0 N.m
Torque Mounting Screw:M6 3.0 to 5.0 N.m
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature

Electrical Characteristics of IGBT TC=25℃ unless otherwise noted

Off Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Collector-Emitter
V(BR)CES Tj=25℃ 1200 V
Breakdown Voltage
VCE=VCES,VGE=0V,
ICES Collector Cut-Off Current 5.0 mA
Tj=25℃
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25℃

On Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Gate-Emitter Threshold IC=4.0mA,VCE=VGE,
VGE(th) 5.0 6.2 7.0 V
Voltage Tj=25℃
IC=100A,VGE=15V,
1.90 2.35
Collector to Emitter Tj=25℃
VCE(sat) V
Saturation Voltage IC=100A,VGE=15V,
2.10
Tj=125℃

©2011 STARPOWER Semiconductor Ltd. 2/25/2011 2/9 Rev.D

GD100HFL120C2S IGBT Module

Switching Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
td(on) Turn-On Delay Time 279 ns
tr Rise Time 61 ns
td(off) Turn-Off Delay Time 308 ns
VCC=600V,IC=100A,
tf Fall Time 205 ns
RG=5.6Ω,VGE=±15V,
Turn-On Switching
Eon Tj=25℃ 5.56 mJ
Loss
Turn-Off Switching
Eoff 6.95 mJ
Loss
td(on) Turn-On Delay Time 287 ns
tr Rise Time 63 ns
td(off) Turn-Off Delay Time 328 ns
VCC=600V,IC=100A,
tf Fall Time 360 ns
RG=5.6Ω,VGE=±15V,
Turn-On Switching
Eon Tj=125℃ 7.85 mJ
Loss
Turn-Off Switching
Eoff 10.55 mJ
Loss
Cies Input Capacitance 8.58 nF
Coes Output Capacitance VCE=25V,f=1MHz, 0.60 nF
Reverse Transfer VGE=0V
Cres 0.40 nF
Capacitance
tSC≤10μs,VGE=15V,
ISC SC Data Tj=125℃,VCC=900V, 600 A
VCEM≤1200V
RGint Internal Gate Resistance 5.0 Ω
LCE Stray Inductance 20 nH
Module Lead Resistance,
RCC’+EE’ TC=25℃ 0.35 mΩ
Terminal to Chip

Electrical Characteristics of DIODE TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units
Diode Forward Tj=25℃ 1.82 2.22
VF IF=100A V
Voltage Tj=125℃ 1.95
Tj=25℃ 5.5
Qr Recovered Charge μC
IF=100A, Tj=125℃ 11.9
Peak Reverse VR=600 V, Tj=25℃ 85
IRM A
Recovery Current di/dt=-2000A/μs, Tj=125℃ 103
Reverse Recovery VGE=-15V Tj=25℃ 2.07
Erec mJ
Energy Tj=125℃ 5.56

©2011 STARPOWER Semiconductor Ltd. 2/25/2011 3/9 Rev.D

GD100HFL120C2S IGBT Module

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case (per IGBT) 0.150 K/W
RθJC Junction-to-Case (per DIODE) 0.225 K/W
RθCS Case-to-Sink (Conductive grease applied) 0.035 K/W
Weight Weight of Module 300 g

©2011 STARPOWER Semiconductor Ltd. 2/25/2011 4/9 Rev.D

GD100HFL120C2S IGBT Module

Fig 1. IGBT Typical Output Characteristics Fig 2. IGBT Typical Transfer Characteristics

Fig 3. IGBT Switching Loss vs. IC Fig 4. IGBT Switching Loss vs. RG

©2011 STARPOWER Semiconductor Ltd. 2/25/2011 5/9 Rev.D

GD100HFL120C2S IGBT Module

Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance

Fig 7. Diode Typical Forward Characteristics Fig 8. Diode Switching Loss vs. IF

©2011 STARPOWER Semiconductor Ltd. 2/25/2011 6/9 Rev.D

GD100HFL120C2S IGBT Module

Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance

©2011 STARPOWER Semiconductor Ltd. 2/25/2011 7/9 Rev.D

GD100HFL120C2S IGBT Module

Package Dimension

Dimensions in Millimeters

©2011 STARPOWER Semiconductor Ltd. 2/25/2011 8/9 Rev.D

GD100HFL120C2S IGBT Module

Terms and Conditions of Usage

The data contained in this product datasheet is exclusively intended for technically trained staff.
you and your technical departments will have to evaluate the suitability of the product for the
intended application and the completeness of the product data with respect to such application.

This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its characteristics.

Should you require product information in excess of the data given in this product data sheet or
which concerns the specific application of our product, please contact the sales office, which is
responsible for you (see www.powersemi.cc), For those that are specifically interested we may
provide application notes.

Due to technical requirements our product may contain dangerous substances. For information on
the types in question please contact the sales office, which is responsible for you.

Should you intend to use the Product in aviation applications, in health or live endangering or life
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If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.

©2011 STARPOWER Semiconductor Ltd. 2/25/2011 9/9 Rev.D