IHW40N60T

Soft Switching Series q

Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode
Features: C
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs G
• TrenchStop® and Fieldstop technology for 600 V applications E
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCE(sat)
• Positive temperature coefficient in VCE(sat) PG-TO-247-3

• Low EMI
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:
• Inductive Cooking
• Soft Switching Applications

Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package

IHW40N60T 600V 40A 1.55V 175°C H40T60 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited by Tjmax IC A
TC = 25°C 80
TC = 100°C 40
Pulsed collector current, tp limited by Tjmax ICpuls 120
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 120
Diode forward current, limited by Tjmax IF
TC = 25°C 40
TC = 100°C 20
Diode pulsed current, tp limited by Tjmax IFpuls 60
Gate-emitter voltage VGE ±20 V
Transient Gate-emitter voltage (tp < 5 ms) ±25
2)
Short circuit withstand time tSC 5 µs
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C Ptot 303 W
Operating junction temperature Tj -40...+175 °C
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 1 Rev. 2.3 Sep. 08

 IHW40N60T
Soft Switching Series q
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.49 K/W
junction – case
Diode thermal resistance, RthJCD 0.76
junction – case
Thermal resistance, RthJA 40
junction – ambient

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =0.5mA 600 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V, I C =40A
T j = 25°C - 1.55 2.05
T j = 175 °C - 1.9 -
Diode forward voltage VF VGE=0V, IF=20A
T j = 25°C - 1.1 -
T j = 175 °C - 1.05 -
Gate-emitter threshold voltage VGE(th) I C =0.8mA, 4.1 4.9 5.7
V C E =V G E
Zero gate voltage collector current ICES V C E = 60 0 V , µA
VGE=0V
T j = 25°C - - 40
T j = 175 °C - - 1000
Gate-emitter leakage current IGES V C E = 0 V , V G E =20V - - 100 nA
Transconductance gfs V C E =20V, I C =40A - 22 - S
Integrated gate resistor RGint - Ω

Dynamic Characteristic
Input capacitance Ciss V C E =25V, - 2423 - pF
Output capacitance Coss VGE=0V, - 113 -
Reverse transfer capacitance Crss f=1MHz - 72 -
Gate charge QGate V C C = 48 0 V, I C =40A - 215 - nC
V G E =15V
Internal emitter inductance LE - 13 - nH
measured 5mm (0.197 in.) from case

Power Semiconductors 2 Rev. 2.3 Sep. 08

 IHW40N60T
Soft Switching Series q
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 25°C , - - - ns
Rise time tr V C C = 40 0 V, I C =40A, - - -
V G E = 0 /1 5 V,
Turn-off delay time td(off) RG=5.6 Ω, - 186 -
Fall time tf L σ 1 ) =4 0nH , - 66.3 -
Turn-on energy Eon C σ 1 ) =30pF - - - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.92 -
Total switching energy Ets reverse recovery. - 0.92 -

Switching Characteristic, Inductive Load, at Tj=175 °C

Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 175 °C , - - - ns
Rise time tr V C C = 40 0 V, I C =40A, - - -
V G E = 0 /1 5 V,
Turn-off delay time td(off) RG= 5.6 Ω - 196 -
Fall time tf L σ 1 ) =4 0nH , - 76.5 -
Turn-on energy Eon C σ 1 ) =30pF - - - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 1.4 -
Total switching energy Ets reverse recovery. - 1.4 -

1)
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors 3 Rev. 2.3 Sep. 08

 IHW40N60T
Soft Switching Series q

140A
100A
120A
tp=1µs
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

100A
2µs
TC=80°C
80A
TC=110°C 10A
10µs
60A
50µs
40A Ic

20A DC 1ms
1A
10ms
0A
10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency for triangular (D = 0, TC = 25°C, Tj ≤175°C;
current (Eon = 0, hard turn-off) VGE=15V)
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 5.6Ω)

350W

300W
60A
IC, COLLECTOR CURRENT
POWER DISSIPATION

250W

200W
40A

150W

100W
Ptot,

20A

50W

0W 0A
25°C 50°C 75°C 100°C 125°C 150°C 25°C 75°C 125°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of Figure 4. Collector current as a function of
case temperature case temperature
(Tj ≤ 175°C) (VGE ≥ 15V, Tj ≤ 175°C)

Power Semiconductors 4 Rev. 2.3 Sep. 08

 IHW40N60T
Soft Switching Series q

100A 100A
VGE=20V
VGE=20V
15V
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

80A 80A 15V
13V
13V
11V
60A 60A 11V
9V
9V
7V
40A 40A 7V

20A 20A

0A 0A
0V 1V 2V 3V 0V 1V 2V 3V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 175°C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE

100A 2.5V IC=80A

IC, COLLECTOR CURRENT

80A 2.0V

IC=40A
60A 1.5V

IC=20A
40A 1.0V

TJ=175°C
20A 0.5V
25°C

0A 0.0V
0V 2V 4V 6V 8V 10V 0°C 50°C 100°C 150°C
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=20V) saturation voltage as a function of
junction temperature
(VGE = 15V)

Power Semiconductors 5 Rev. 2.3 Sep. 08

 IHW40N60T
Soft Switching Series q

td(off)
td(off)
t, SWITCHING TIMES

t, SWITCHING TIMES
100ns tf
100ns tf

10ns 10ns
0A 20A 40A 60A 10Ω 20Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 5.6Ω, VCE= 400V, VGE = 0/15V, IC = 40A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

6V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE

td(off) max.

5V
typ.
t, SWITCHING TIMES

100ns
tf
min.
4V

3V

10ns
25°C 50°C 75°C 100°C 125°C 150°C 25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as
function of junction temperature a function of junction temperature
(inductive load, VCE = 400V, (IC = 0.8mA)
VGE = 0/15V, IC = 40A, RG=5.6Ω,
Dynamic test circuit in Figure E)

Power Semiconductors 6 Rev. 2.3 Sep. 08

 IHW40N60T
Soft Switching Series q

2.5mJ 2.0mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

Eoff
Eoff
2.0mJ
1.5mJ

1.5mJ
1.0mJ

1.0mJ

0.5mJ
0.5mJ

0.0mJ
0.0mJ
0Ω 10Ω 20Ω
0A 10A 20A 30A 40A 50A 60A 70A

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, TJ = 175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 5.6Ω, VCE = 400V, VGE = 0/15V, IC = 40A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

1.4mJ

1.2mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

Eoff 1.5mJ
Eoff
1.0mJ

0.8mJ
1.0mJ

0.6mJ

0.4mJ 0.5mJ

0.2mJ

0.0mJ 0.0mJ
25°C 50°C 75°C 100°C 125°C 150°C 300V 350V 400V 450V

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses Figure 16. Typical switching energy losses
as a function of junction as a function of collector emitter
temperature voltage
(inductive load, VCE = 400V, (inductive load, TJ = 175°C,
VGE = 0/15V, IC = 40A, RG = 5.6Ω, VGE = 0/15V, IC = 40A, RG = 5.6Ω,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

Power Semiconductors 7 Rev. 2.3 Sep. 08

 IHW40N60T
Soft Switching Series q

Ciss
12V 1nF
VGE, GATE-EMITTER VOLTAGE

120V

c, CAPACITANCE
9V 480V

6V
Coss
100pF

3V
Crss

0V 0V 10V 20V 30V 40V

0nC 30nC 60nC 90nC 120nC150nC180nC210nC
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=40 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)

D=0.5
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

0.2
0.2
-1
10 K/W
R,(K/W) τ, (s) -1 0.1
0.1 -2 10 K/W
0.093 8.74*10 R,(K/W) τ, (s)
-2 -1
0.119 1.07*10 0.151 1.26*10
-4 -3
0.05 0.0828 7.49*10 0.223 9.7*10
-5 0.05 -3
0.0386 8.85*10 0.273 1.4*10
-6
0.02 0.0221 7.39*10 0.02 0.111 1.51*10
-4

R1 R2 R1 R2
0.01 0.01
single pulse
-2
single pulse C1= τ1/R1 C2= τ2/R2 C1= τ1/R1 C2= τ2/R2
10 K/W
-2
10 K/W
1µs 10µs 100µs 1ms 10ms 100ms 10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH tP, PULSE WIDTH

Figure 19. IGBT transient thermal resistance Figure 20. Diode transient thermal
(D = tp / T) impedance as a function of pulse
width
(D=tP/T)

Power Semiconductors 8 Rev. 2.3 Sep. 08

 IHW40N60T
Soft Switching Series q

70A
IF=40A
TJ=25°C
60A

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

175°C 1.0V 20A

50A
10A
40A

30A
0.5V
20A

10A

0A 0.0V
0.0V 0.5V 1.0V 1.5V 25°C 50°C 75°C 100°C 125°C 150°C

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 21. Typical diode forward current as Figure 22. Typical diode forward voltage as a
a function of forward voltage function of junction temperature

Power Semiconductors 9 Rev. 2.3 Sep. 08

 IHW40N60T
Soft Switching Series q
PG-TO247-3

MIN MAX MIN MAX

4.90 5.16 0.193 0.203
2.27 2.53 0.089 0.099
1.85 2.11 0.073 0.083 Z8B00003327
1.07 1.33 0.042 0.052
0
1.90 2.41 0.075 0.095
1.90 2.16 0.075 0.085
2.87 3.38 0.113 0.133
2.87 3.13 0.113 0.123
0 5 5
0.55 0.68 0.022 0.027
20.82 21.10 0.820 0.831 7.5mm
16.25 17.65 0.640 0.695
1.05 1.35 0.041 0.053
15.70 16.03 0.618 0.631
13.10 14.15 0.516 0.557
3.68 5.10 0.145 0.201
1.68 2.60 0.066 0.102
5.44 0.214
3 3
19.80 20.31 0.780 0.799 17-12-2007
4.17 4.47 0.164 0.176
3.50 3.70 0.138 0.146
5.49 6.00 0.216 0.236 03
6.04 6.30 0.238 0.248

Power Semiconductors 10 Rev. 2.3 Sep. 08

 IHW40N60T
Soft Switching Series q
i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS QF 10% Ir r m t
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

τ1 τ2 τn
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Power Semiconductors 11 Rev. 2.3 Sep. 08

 IHW40N60T
Soft Switching Series q
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

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Power Semiconductors 12 Rev. 2.3 Sep. 08