GD100HFU120C1S IGBT Module

STARPOWER
SEMICONDUCTOR IGBT

GD100HFU120C1S
Molding Type Module

1200V/100A 2 in one-package

General Description
STARPOWER IGBT Power Module provides ultrafast
switching speed as well as short circuit ruggedness.
It’s designed for the applications such as electronic
welder and inductive heating.

Features
 NPT IGBT technology
 10μs short circuit capability
 Low switching losses
 Rugged with ultrafast performance
 VCE(sat) with positive temperature coefficient
 Low inductance case
 Fast & soft reverse recovery anti-parallel FWD
 Isolated copper baseplate using DBC technology Equivalent Circuit Schematic

Typical Applications
 Switching mode power supplies
 Inductive heating
 Electronic welder

©2012 STARPOWER Semiconductor Ltd. 7/7/2012 1/9 Rev.E

GD100HFU120C1S IGBT Module

Absolute Maximum Ratings TC=25℃ unless otherwise noted

Symbol Description GD100HFU120C1S Units
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25℃ 170
IC A
@ TC=80℃ 100
ICM Pulsed Collector Current tp=1ms 200 A
IF Diode Continuous Forward Current 100 A
IFM Diode Maximum Forward Current tp=1ms 200 A
PD Maximum Power Dissipation @ Tj=150℃ 679 W
Tjmax Maximum Junction Temperature 150 ℃
Tjop Operating Junction Temperature -40 to +125 ℃
TSTG Storage Temperature Range -40 to +125 ℃
VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V
Mounting Power Terminal Screw:M5 2.5 to 5.0
N.m
Torque Mounting Screw:M6 3.0 to 5.0

Electrical Characteristics of IGBT TC=25℃ unless otherwise noted

Off Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Collector-Emitter
V(BR)CES Tj=25℃ 1200 V
Breakdown Voltage
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 5.0 mA
Current Tj=25℃
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25℃

On Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Gate-Emitter Threshold IC=1.0mA,VCE=VGE,
VGE(th) 4.4 4.9 6.0 V
Vol tage Tj=25℃
IC=100A,VGE=15V,
3.10 3.55
Collector to Emitter Tj=25℃
VCE(sat) V
Saturation Vol tage IC=100A,VGE=15V,
3.45
Tj=125℃

©2012 STARPOWER Semiconductor Ltd. 7/7/2012 2/9 Rev.E

GD100HFU120C1S IGBT Module

Switching Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
td(on) Turn-On Delay Time 300 ns
tr Rise Time 64 ns
td(off) Turn-Off Delay Time 340 ns
VCC=600V,IC=100A,
tf Fall Time 105 ns
RG=5.6Ω,VGE=±15V,
Turn-On Switching Tj=25℃
Eon 4.76 mJ
Loss
Turn-Off Switching
Eoff 4.25 mJ
Loss
td(on) Turn-On Delay Time 320 ns
tr Rise Time 65 ns
td(off) Turn-Off Delay Time 350 ns
VCC=600V,IC=100A,
tf Fall Time 13 ns
RG=5.6Ω,VGE=±15V,
Turn-On Switching
Eon Tj=125℃ 7.20 mJ
Loss
Turn-Off Switching
Eoff 5.50 mJ
Loss
Cies Input Capacitance 8.45 nF
Coes Output Capacitance VCE=30V,f=1MHz, 0.76 nF
Reverse Transfer VGE=0V
Cres 0.31 nF
Capacitance
tP≤10μs,VGE=15 V,
ISC SC Data Tj=125℃,VCC=600V, 900 A
VCEM≤1200V
RGint Internal Gate Resistance / Ω
LCE Stray Inductance 30 nH
Module Lead
RCC’+EE’ Resistance, 0.75 mΩ
Terminal To Chip

Electrical Characteristics of Diode TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units
Diode Forward IF=100A, Tj=25℃ 1.82 2.22
VF V
Vol tage VGE=0V Tj=125℃ 1.95
Recovered Tj=25℃ 5.4
Qr μC
Charge IF=100A, Tj=125℃ 11.2
Peak Reverse VR=600V, Tj=25℃ 81
IRM A
Recovery Current RG=5.6Ω, Tj=125℃ 101
Reverse Recovery VGE=-15V Tj=25℃ 3.54
Erec mJ
Energy Tj=125℃ 6.57

©2012 STARPOWER Semiconductor Ltd. 7/7/2012 3/9 Rev.E

GD100HFU120C1S IGBT Module

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case (per IGBT) 0.184 K/W
RθJC Junction-to-Case (per Diode) 0.300 K/W
RθCS Case-to-Sink (Conductive grease applied) 0.05 K/W
Weight Weight of Module 150 g

©2012 STARPOWER Semiconductor Ltd. 7/7/2012 4/9 Rev.E

 GD100HFU120C1S IGBT Module

200 200

175 VGE=15V 175 VCE=20V

150 150

125 25℃ 125

IC [A]

IC [A]
100 125℃ 100 125℃ 25℃
75 75

50 50

25 25

0 0
0 1 2 3 4 5 5 6 7 8 9 10 11
VCE [V] VGE [V]

Fig 1. IGBT Output Characteristic Fig 2. IGBT Transfer Characteristic

22 40
20 VCC=600V VCC=600V
RG=5.6Ω 35 IC=100A
18 VGE=±15V VGE=±15V
16 Tj=125℃ 30 Tj=125℃
14 25
EON
E [mJ]

E [mJ]

12
20
10 EON
8 15

6 10
EOFF
4 EOFF
5
2
0 0
0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60
IC [A] RG [Ω]

Fig 3. IGBT Switching Loss vs. IC Fig 4. IGBT Switching Loss vs. RG

©2012 STARPOWER Semiconductor Ltd. 7/7/2012 5/9 Rev.E

 GD100HFU120C1S IGBT Module

160 1

140 Module
IGBT
120
0.1
100

ZthJC [K/W]
IC [A]

80

60
0.01
40 RG=5.6Ω
VGE=±15V
20 Tj=125℃
i: 1 2 3 4
ri[K/W]: 0.0110 0.0607 0.0589 0.0534
τi[s]: 0.0100 0.0200 0.0500 0.1000

0 0.001
0 350 700 1050 1400 0.001 0.01 0.1 1 10
VCE [V] t [s]

Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance

200 10

9
175
8
150
7
125 25℃ EREC
6
E [mJ]
IF [A]

100 125℃ 5

4
75
3 VCC=600V
50 RG=5.6Ω
2 VGE=-15V
25 Tj=125℃
1

0 0
0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 175 200
VF [V] IF [A]

Fig 7. Diode Forward Characteristic Fig 8. Diode Switching Loss vs. IF

©2012 STARPOWER Semiconductor Ltd. 7/7/2012 6/9 Rev.E

 GD100HFU120C1S IGBT Module

7 1
VCC=600V Diode
6.5 IF=100A
VGE=-15V
6 Tj=125℃
0.1
5.5

ZthJC [K/W]
E [mJ]

5 EREC

4.5
0.01
4

3.5 i: 1 2 3 4
ri[K/W]: 0.0180 0.0990 0.0960 0.0870
τi[s]: 0.0100 0.0200 0.0500 0.1000

3 0.001
0 10 20 30 40 50 60 0.001 0.01 0.1 1 10
RG [Ω] t [s]

Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance

©2012 STARPOWER Semiconductor Ltd. 7/7/2012 7/9 Rev.E

GD100HFU120C1S IGBT Module

Package Dimensions
Dimensions in Millimeters

©2012 STARPOWER Semiconductor Ltd. 7/7/2012 8/9 Rev.E

GD100HFU120C1S IGBT Module

Terms and Conditions of Usage

The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.

This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.

Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.

Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.

Should you intend to use the Product in aviation applications, in health or live endangering or
life support applications, please notify.

If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.

©2012 STARPOWER Semiconductor Ltd. 7/7/2012 9/9 Rev.E