Fuji Discrete Package IGBT: N N Outline Drawing

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Fuji Discrete Package IGBT n Outline Drawing

n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Minimized Internal Stray Inductance

n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply

n Maximum Ratings and Characteristics n Equivalent Circuit

• Absolute Maximum Ratings ( Tc=25°C)


Items Symbols Ratings Units
Collector-Emitter Voltage VCES 1200 V
Gate -Emitter Voltage VGES ± 20 V
DC Tc= 25°C IC 25 38
Collector Current DC Tc=100°C IC 100 25 A
1ms Tc= 25°C IC PULSE 114
IGBT Max. Power Dissipation PC 310 W
FWD Max. Power Dissipation PC 145 W
Operating Temperature Tj +150 °C
Storage Temperature Tstg -40 ∼ +150 °C
Mounting Screw Torque 70 Nm

• Electrical Characteristics ( at Tj=25°C )


Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current ICES VGE=0V VCE=1200V 1.0 mA
Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 20 µA
Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=25mA 5.5 8.5
V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V IC=25A 3.5
Input capacitance Cies VGE=0V 2500
Output capacitance Coes VCE=10V 500 pF
Reverse Transfer capacitance Cres f=1MHz 200
tON VCC=600V 1.2
Turn-on Time
tr IC=25A 0.6 µs
tOFF VGE=±15V 1.5
Turn-off Time
Switching Time tf RG=82Ω 0.5
tON VCC=600V 0.16
Turn-on Time
tr IC=25A 0.11
µs
tOFF VGE=+15V 0.30
Turn-off Time
tf RG=8Ω 0.5
Diode Forward On-Voltage VF IF=25A VGE=0V 3.0 V
Reverse Recovery Time trr IF=25A, VGE=-10V, di/dt=100A/µs 350 ns

• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
Rth(j-c) IGBT 0.40
Thermal Resistance °C/W
Rth(j-c) Diode 0.86
Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C T j= 1 2 5 ° C
60 60

V GE = 2 0 V , 1 5 V V GE = 2 0 V , 1 5 V
50
12V
12V
[A]

[A]
40 40
C

C
10V
Collector Current : I

Collector Current : I
10V
30

20 20

10

8V
8V
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage : V CE [V]

Collector-Emitter Voltage vs. Gate-Emitter Voltage Collector-Emitter Voltage vs. Gate-Emitter Voltage
T j= 2 5 ° C T j= 1 2 5 ° C
12 12
[V]

[V]

10 10
CE

CE

8 8
Collector-Emitter Voltage : V

Collector-Emitter Voltage : V

6 6

IC =
4 50A 4 IC =
25A 50A
25A
12.5A
2 2 12.5A

0 0
0 5 10 15 20 25 0 5 10 15 20 25

Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V]

Switching Time vs. Collector Current Switching Time vs. Collector Current
V CC = 6 0 0 V , R G=8.2 Ω , V GE = ± 1 5 V , T j= 2 5 ° C V CC = 6 0 0 V , R G =8.2 Ω , V GE= ± 1 5 V , T j= 1 2 5 ° C

1000 1000 t off


, t r, t off , t f [nsec]
, t r, t off , t f [nsec]

tf
t off
t on
t on
tf tr
on
on

tr
Switching Time : t
Switching Time : t

100 100

10 10
0 10 20 30 40 0 10 20 30 40 50

Collector Current : I C [A] Collector Current : I C [A]


Switching Time vs. R G Switching Time vs. R G
V CC =600V, I C = 2 5 A , V GE = ± 1 5 V , T j= 2 5 ° C V CC =600V, I C = 2 5 A , V GE = ± 1 5 V , T j= 1 2 5 ° C
, t r, t off , t f [nsec]

, t r, t off , t f [nsec]
t off
1000 t on t off

1000 t on

tr
on

on
tf
Switching Time : t

Switching Time : t
tf
tr
100

100

10
0 20 40 60 80 100 0 20 40 60 80 100

G a t e R e s i s t a n c e : R G [Ω ] G a t e R e s i s t a n c e : R G [Ω ]

Capacitance vs. Collector-Emitter Voltage Dynamic Input Characteristics


T j= 2 5 ° C T j= 2 5 ° C
10000 1000 25
VCC=
400V
600V
800V
[V]

C ies 800 20

[V]
CE
C res C ies [pF]

GE
1000
Collector-Emitter Voltage : V

Gate-Emitter Voltage : V
600 15
oes

C oes
Capacitance : C

400 10
100
C res

200 5

10 0 0
0 5 10 15 20 25 30 35 0 50 100 150 200 250 300 350 400 450
G a t e C h a r g e : Q G [nQ]

Reverse Recovery Time vs. Forward Current Reverse Recovery Current vs. Forward Current
-di -di
V R= 2 0 0 V , / dt= 1 0 0 A / µ s e c V R= 2 0 0 V , / dt = 1 0 0 A / µ s e c
300 16

125°C
14
[nsec]

[A]

12 125°C
rr
rr

Reverse Recovery Current : I

200
10
Reverse Recovery Time : t

8
25°C
25°C
6
100

0 0
0 10 20 30 40 50 0 10 20 30 40 50

Forward Current : I F [A] Forward Current : I F [A]


Reverse Biased Safe Operating Area Typical Short Circuit Capability

+ V GE= 1 5 V , - V GE< 1 5 V , T j< 1 2 5 ° C , R G > 8.2 Ω V CC = 8 0 0 V , R G =8.2 Ω , T j= 1 2 5 ° C


60 300 60

50 250
t SC

[A]

[µs]
I SC

SC
[A]

40 200 40

SC
C

Short Circuit Current : I

Short Circuit Time : t


Collector Current : I

30 150

20 100 20

10 50

0 0 0
0 200 400 600 800 1000 1200 1400 5 10 15 20 25
Gate Voltage : V GE [V]
Collector-Emitter Voltage : V CE [V]

-di
Reverse Recovery Characteristics vs. / dt
Forward Voltage vs. Forward Current
V R = 2 0 0 V , I F = 2 5 A , T j= 1 2 5 ° C
60 1000 25

T j= 1 2 5 ° C 2 5 ° C I rr
50
[nsec]

800 20

[A] rr
[A]

rr

40

Reverse Recovery Current : I


Reverse Recovery Time : t
F

600 15
Forward Current : I

30

400 10
20
t rr
200 5
10

0 0 0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0 50 100 150 200 250 300
-di
Forward Voltage : V F [V] / dt [A/µsec]

Transient Thermal Resistance


Thermal Resistance : Rth(j-c) [°C/W]

1
10

FWD
0
10

IGBT
-1
10

-2
10
-4 -3 -2 -1 0
10 10 10 10 10

Pulse Width : P W [sec]


Switching losses
(Eon, Eoff vs. IC)

IC [A]

Test Circuit Switching waveforms

P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com

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