Fuji Discrete Package IGBT: N N Outline Drawing
Fuji Discrete Package IGBT: N N Outline Drawing
Fuji Discrete Package IGBT: N N Outline Drawing
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Minimized Internal Stray Inductance
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
Rth(j-c) IGBT 0.40
Thermal Resistance °C/W
Rth(j-c) Diode 0.86
Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C T j= 1 2 5 ° C
60 60
V GE = 2 0 V , 1 5 V V GE = 2 0 V , 1 5 V
50
12V
12V
[A]
[A]
40 40
C
C
10V
Collector Current : I
Collector Current : I
10V
30
20 20
10
8V
8V
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
Collector-Emitter Voltage vs. Gate-Emitter Voltage Collector-Emitter Voltage vs. Gate-Emitter Voltage
T j= 2 5 ° C T j= 1 2 5 ° C
12 12
[V]
[V]
10 10
CE
CE
8 8
Collector-Emitter Voltage : V
Collector-Emitter Voltage : V
6 6
IC =
4 50A 4 IC =
25A 50A
25A
12.5A
2 2 12.5A
0 0
0 5 10 15 20 25 0 5 10 15 20 25
Switching Time vs. Collector Current Switching Time vs. Collector Current
V CC = 6 0 0 V , R G=8.2 Ω , V GE = ± 1 5 V , T j= 2 5 ° C V CC = 6 0 0 V , R G =8.2 Ω , V GE= ± 1 5 V , T j= 1 2 5 ° C
tf
t off
t on
t on
tf tr
on
on
tr
Switching Time : t
Switching Time : t
100 100
10 10
0 10 20 30 40 0 10 20 30 40 50
, t r, t off , t f [nsec]
t off
1000 t on t off
1000 t on
tr
on
on
tf
Switching Time : t
Switching Time : t
tf
tr
100
100
10
0 20 40 60 80 100 0 20 40 60 80 100
G a t e R e s i s t a n c e : R G [Ω ] G a t e R e s i s t a n c e : R G [Ω ]
C ies 800 20
[V]
CE
C res C ies [pF]
GE
1000
Collector-Emitter Voltage : V
Gate-Emitter Voltage : V
600 15
oes
C oes
Capacitance : C
400 10
100
C res
200 5
10 0 0
0 5 10 15 20 25 30 35 0 50 100 150 200 250 300 350 400 450
G a t e C h a r g e : Q G [nQ]
Reverse Recovery Time vs. Forward Current Reverse Recovery Current vs. Forward Current
-di -di
V R= 2 0 0 V , / dt= 1 0 0 A / µ s e c V R= 2 0 0 V , / dt = 1 0 0 A / µ s e c
300 16
125°C
14
[nsec]
[A]
12 125°C
rr
rr
200
10
Reverse Recovery Time : t
8
25°C
25°C
6
100
0 0
0 10 20 30 40 50 0 10 20 30 40 50
50 250
t SC
[A]
[µs]
I SC
SC
[A]
40 200 40
SC
C
30 150
20 100 20
10 50
0 0 0
0 200 400 600 800 1000 1200 1400 5 10 15 20 25
Gate Voltage : V GE [V]
Collector-Emitter Voltage : V CE [V]
-di
Reverse Recovery Characteristics vs. / dt
Forward Voltage vs. Forward Current
V R = 2 0 0 V , I F = 2 5 A , T j= 1 2 5 ° C
60 1000 25
T j= 1 2 5 ° C 2 5 ° C I rr
50
[nsec]
800 20
[A] rr
[A]
rr
40
600 15
Forward Current : I
30
400 10
20
t rr
200 5
10
0 0 0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0 50 100 150 200 250 300
-di
Forward Voltage : V F [V] / dt [A/µsec]
1
10
FWD
0
10
IGBT
-1
10
-2
10
-4 -3 -2 -1 0
10 10 10 10 10
IC [A]
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