NGTB30N135IHRWG

IGBT with Monolithic Free

Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, provides superior
performance in demanding switching applications, and offers low
on−state voltage with minimal switching losses. The IGBT is well http://onsemi.com
suited for resonant or soft switching applications.

Features 30 A, 1350 V
• Extremely Efficient Trench with Fieldstop Technology VCEsat = 2.30 V
• 1350 V Breakdown Voltage Eoff = 0.85 mJ
• Optimized for Low Losses in IH Cooker Application
• Reliable and Cost Effective Single Die Solution C
• These are Pb−Free Devices

Typical Applications
• Inductive Heating G
• Consumer Appliances
• Soft Switching E

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit
Collector−emitter voltage @ VCES 1350 V
TJ = 25°C
Collector current IC A
@ TC = 25°C 60 G TO−247
@ TC = 100°C 30 C
E CASE 340AL
Pulsed collector current, Tpulse ICM 120 A
limited by TJmax 10 ms pulse,
VGE = 15 V
Diode forward current IF A MARKING DIAGRAM
@ TC = 25°C 60
@ TC = 100°C 30
Diode pulsed current, Tpulse limited IFM 120 A
by TJmax 10 ms pulse,
VGE = 0 V
Gate−emitter voltage VGE $20 V 30N135IHR
Transient Gate−emitter Voltage ±25 AYWWG
(Tpulse = 5 ms, D < 0.10)
Power Dissipation PD W
@ TC = 25°C 394
@ TC = 100°C 197
Operating junction temperature TJ −40 to +175 °C
range A = Assembly Location
Storage temperature range Tstg −55 to +175 °C Y = Year
WW = Work Week
Lead temperature for soldering, 1/8” TSLD 260 °C G = Pb−Free Package
from case for 5 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended ORDERING INFORMATION
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. Device Package Shipping
NGTB30N135IHRWG TO−247 30 Units / Rail
(Pb−Free)

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

August, 2013 − Rev. 0 NGTB30N135IHR/D
 NGTB30N135IHRWG

THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case RqJC 0.38 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage, VGE = 0 V, IC = 5 mA V(BR)CES 1350 − − V
gate−emitter short−circuited

Collector−emitter saturation voltage VGE = 15 V, IC = 30 A VCEsat − 2.30 2.65 V

VGE = 15 V, IC = 30 A, TJ = 175°C − 2.50 −

Gate−emitter threshold voltage VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate− VGE = 0 V, VCE = 1350 V ICES − − 0.5 mA
emitter short−circuited VGE = 0 V, VCE = 1350 V, TJ = 175°C − − 2.0

Gate leakage current, collector−emitter VGE = 20 V, VCE = 0 V IGES − − 100 nA

short−circuited

DYNAMIC CHARACTERISTIC
Input capacitance Cies − 5290 − pF
Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 124 −
Reverse transfer capacitance Cres − 100 −
Gate charge total Qg − 234 − nC
Gate to emitter charge VCE = 600 V, IC = 30 A, VGE = 15 V Qge − 39 −
Gate to collector charge Qgc − 105 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time TJ = 25°C td(off) − 250 − ns
Fall time VCC = 600 V, IC = 30 A tf − 150 −
Rg = 10 W
Turn−off switching loss VGE = 0 V/ 15V Eoff − 0.85 − mJ
Turn−off delay time TJ = 150°C td(off) − 265 − ns
Fall time VCC = 600 V, IC = 30 A tf − 225 −
Rg = 10 W
Turn−off switching loss VGE = 0 V/ 15V Eoff − 1.90 − mJ
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 30 A VF − 2.10 2.40 V
VGE = 0 V, IF = 30 A, TJ = 175°C − 3.20 −

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TYPICAL CHARACTERISTICS

250 250
TJ = 25°C TJ = 150°C
13 V VGE = 20 to 15 V
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

VGE = 20 to 15 V 11 V 13 V
200 200

11 V
150 150
10 V
10 V
100 100
9V 9V

50 50 8V
8V
7V
7V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics

250 160
VGE = 20 to 15 V 13 V 11 V
IC, COLLECTOR CURRENT (A) 140
IC, COLLECTOR CURRENT (A)

TJ = 25°C
200
120

150 10 V 100
TJ = 150°C
80
100
60

9V 40
50
7V 20
TJ = −40°C 8V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 9 10 11 12 13
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics

4.00
VCE, COLLECTOR−EMITTER VOLTAGE (V)

100000

3.50 IC = 60 A
10000 Cies
3.00
C, CAPACITANCE (pF)

IC = 30 A
2.50
1000
IC = 15 A
2.00
100 Coes
1.50
Cres
1.00
10
0.50
TJ = 25°C
0.00 1
−75 −50 −25 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance

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TYPICAL CHARACTERISTICS

70 16

VGE, GATE−EMITTER VOLTAGE (V)

60 14
IF, FORWARD CURRENT (A)

12
50
10
40 TJ = 25°C
8
30
6
20
TJ = 150°C 4
VCE = 600 V
10 2 VGE = 15 V
IC = 30 A
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 50 100 150 200 250
VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge

2.5 1000

2
SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

td(off)

1.5 Eoff tf

100
1
VCE = 600 V VCE = 600 V
0.5 VGE = 15 V VGE = 15 V
IC = 30 A IC = 30 A
Rg = 10 W Rg = 10 W
0 10
0 20 40 60 80 100 120 140 160 0 20 40 60 80
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature

7 1000
VCE = 600 V
6 VGE = 15 V
TJ = 150°C
SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

5 Rg = 10 W td(off)
Eoff
4 tf
100
3

2
VCE = 600 V
VGE = 15 V
1
TJ = 150°C
Rg = 10 W
0 10
5 20 35 50 65 80 5 20 35 50 65 80
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC

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TYPICAL CHARACTERISTICS

3 10000

2.5
Eoff
SWITCHING LOSS (mJ)

td(off)

SWITCHING TIME (ns)

2 1000

1.5 tf

1 100
VCE = 600 V VCE = 600 V
VGE = 15 V VGE = 15 V
0.5
TJ = 150°C TJ = 150°C
IC = 30 A IC = 30 A
0 10
5 15 25 35 45 55 65 75 85 5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg

2.5 1000

2 Eoff
SWITCHING LOSS (mJ)

td(off)
SWITCHING TIME (ns)

1.5
tf
100
1
IC = 30 A
IC = 30 A
VGE = 15 V
0.5 VGE = 15 V
TJ = 150°C
TJ = 150°C
Rg = 10 W
Rg = 10 W
0 10
250 300 350 400 450 500 550 600 650 700 750 800 250 300 350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE

1000 1000
1 ms 100 ms VGE = 15 V, TC = 125°C
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)

100
50 ms
100
10 dc operation

1
Single Nonrepetitive 10
Pulse TC = 25°C
0.1 Curves must be derated
linearly with increase
in temperature
0.01 1
1 10 100 1000 1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area

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TYPICAL CHARACTERISTICS

140 1650

120 1600

100 TC = 80°C 1550

V(BR)CES (V)
80 1500
TC = 110°C
Ipk (A)

60 1450

40 1400
VCE = 600 V, TJ ≤ 175°C, Rgate = 10 W,
20 1350
VGE = 0/15 V, Tcase = 80°C or 110°C
(as noted), D = 0.5
0 1300
0.01 0.1 1 10 100 1000 −40 −15 10 35 60 85 110 135
FREQUENCY (kHz) TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Collector Current vs. Switching Figure 20. Typical V(BR)CES vs. Temperature
Frequency

1
RqJC = 0.385

50% Duty Cycle

0.1 20% Ri (°C/W) ti (sec)

0.005757 0.000174
R(t) (°C/W)

10% Junction R1 R2 Rn Case 0.000122 0.025884

0.007153 0.001398
5% 0.010643 0.002971
Ci = ti/Ri
0.016539 0.006046
0.01 2% 0.048615 0.006505
C1 C2 Cn 0.019522 0.051225
0.015924 0.198582
Duty Factor = t1/t2 0.051783 0.193115
Single Pulse 0.025689 1.23097
Peak TJ = PDM x ZqJC + TC
0.180713 0.553364
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
PULSE TIME (sec)
Figure 21. IGBT Transient Thermal Impedance

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Figure 22. Test Circuit for Switching Characteristics

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Figure 23. Definition of Turn On Waveform

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Figure 24. Definition of Turn Off Waveform

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PACKAGE DIMENSIONS

TO−247
CASE 340AL
ISSUE A NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
SEATING 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
NOTE 4 A B PLANE
0.635 M B A M
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
E A P NOTE 6 MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
E2/2 EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
Q S L1.
E2 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
NOTE 4 TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
D 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
NOTE 3 BY L1.
4
MILLIMETERS
1 2 3 DIM MIN MAX
A 4.70 5.30
L1 A1 2.20 2.60
b 1.00 1.40
b2 1.65 2.35
L NOTE 5 b4 2.60 3.40
c 0.40 0.80
D 20.30 21.40
E 15.50 16.25
E2 4.32 5.49
2X b2 c e 5.45 BSC
L 19.80 20.80
b4 A1 L1 3.50 4.50
3X b NOTE 7 P 3.55 3.65
0.25 M B A M Q 5.40 6.20
e S 6.15 BSC

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