PD - 94858

IRG4PC50WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power C
Supply and PFC (power factor correction)
applications VCES = 600V
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter G VCE(on) max. = 2.30V
• Low IGBT conduction losses
• Latest-generation IGBT design and construction E @VGE = 15V, IC = 27A
offers tighter parameters distribution, exceptional n-channel
reliability
• Lead-Free

Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >300 kHz)
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 55
IC @ TC = 100°C Continuous Collector Current 27 A
ICM Pulsed Collector Current  220
ILM Clamped Inductive Load Current ‚ 220
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy ƒ 170 mJ
PD @ TC = 25°C Maximum Power Dissipation 200
W
PD @ TC = 100°C Maximum Power Dissipation 78
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.64
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount ––– 40
Wt Weight 6 (0.21) ––– g (oz)
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IRG4PC50WPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)CES Emitter-to-Collector Breakdown Voltage „ 18 — — V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.41 — V/°C VGE = 0V, IC = 5.0mA
— 1.93 2.3 IC = 27A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage — 2.25 — IC = 55A See Fig.2, 5
V
— 1.71 — IC = 27A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance … 27 41 — S VCE = 100 V, IC = 27A
— — 250 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current µA
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
— — 5000 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 180 270 IC = 27A
Qge Gate - Emitter Charge (turn-on) — 24 36 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) — 63 95 VGE = 15V
t d(on) Turn-On Delay Time — 46 —
tr Rise Time — 33 — TJ = 25°C
ns
td(off) Turn-Off Delay Time — 120 180 IC = 27A, VCC = 480V
tf Fall Time — 57 86 VGE = 15V, RG = 5.0Ω
Eon Turn-On Switching Loss — 0.08 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 0.32 — mJ See Fig. 9, 10, 14
Ets Total Switching Loss — 0.40 0.5
t d(on) Turn-On Delay Time — 31 — TJ = 150°C,
tr Rise Time — 43 — IC = 27A, VCC = 480V
ns
t d(off) Turn-Off Delay Time — 210 — VGE = 15V, RG = 5.0Ω
tf Fall Time — 62 — Energy losses include "tail"
E ts Total Switching Loss — 1.14 — mJ See Fig. 10,11, 14
LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
Cies Input Capacitance — 3700 — VGE = 0V
Coes Output Capacitance — 260 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 68 — ƒ = 1.0MHz
Notes:

 Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, „ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
(See fig. 13a) … Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.

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 IRG4PC50WPbF
100
For both: Triangular wave:
Duty cycle: 50%
TJ = 125°C
80 Tsink = 90°C
Gate drive as specified
Power Dissipation = 40W Clamp voltage:
Load Current ( A )

80% of rated

60
Square wave:
60% of rated
voltage
40

20
Ideal diodes

0 A
0.1 1 10 100 1000

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000 1000
I C , Collector-to-Emitter Current (A)

I C, Collector-to-Emitter Current (A)

100 100
TJ = 150 °C

TJ = 150 °C

TJ = 25 °C
TJ = 25 °C
10 10

V GE = 15V V CC = 50V
20µs PULSE WIDTH 5µs PULSE WIDTH
1 1
1 10 5 6 7 8 9 10 11
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PC50WPbF
60 3.0
VGE = 15V
80 us PULSE WIDTH

VCE , Collector-to-Emitter Voltage(V)

Maximum DC Collector Current(A)

50

40
IC = 54 A

30 2.0
IC = 27 A

20
IC =13.5 A

10

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

0.50
Thermal Response (Z thJC )

0.20
0.1
0.10

0.05
0.02
0.01 SINGLE PULSE PDM
(THERMAL RESPONSE)
0.01
t1
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4PC50WPbF
8000 20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 27A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

Coes = Cce + Cgc 16
6000
C, Capacitance (pF)

Cies 12

4000

Coes
2000
4
Cres

0 0
1 10 100 0 40 80 120 160 200
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

3.0 10
V CC = 480V 5.0Ω
RG = Ohm
V GE = 15V VGE = 15V
TJ = 25 °C VCC = 480V
I C = 27A
Total Switching Losses (mJ)
Total Switching Losses (mJ)

IC = 54 A

2.0

IC = 27 A
1

IC = 13.5 A
1.0

0.0 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
RGRG, ,Gate
GateResistance Ω)
Resistance ((Ohm) TJ , Junction Temperature (° C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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 IRG4PC50WPbF
3.0 1000
RG 5.0Ω
= Ohm VGE = 20V
TJ = 150 ° C T J = 125 oC

I C , Collector-to-Emitter Current (A)

VCC = 480V
VGE = 15V
Total Switching Losses (mJ)

2.0 100

1.0 10

SAFE OPERATING AREA

0.0 1
0 10 20 30 40 50 60 1 10 100 1000
I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current

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 IRG4PC50WPbF

L D.U.T.
VC * 480V
RL =
4 X I C@25°C
50V 0 - 480V
1000V 480µF
960V
c
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.

Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector

Load Test Circuit Current Test Circuit

IC
L
Driver* D.U.T. Fig. 14a - Switching Loss
VC Test Circuit
50V
1000V
c * Driver same type
as D.U.T., VC = 480V
d e

d
90%

e 10%

VC
90%
t d(off)
Fig. 14b - Switching Loss
Waveforms

10%
I C 5%
tr tf
t d(on) t=5µs
E on E off
E ts = (Eon +Eoff )

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IRG4PC50WPbF

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

3.65 (.143) -D-

15.90 (.626) 3.55 (.140) 5.30 (.209)
15.30 (.602) 4.70 (.185)
0.25 (.010) M D B M
-B- -A- 2.50 (.089)
1.50 (.059)
5.50 (.217) 4

20.30 (.800)
19.70 (.775) 5.50 (.217) NOTES:
2X
4.50 (.177) 1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
1 2 3 2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
-C- TO-247-AC.
14.80 (.583)
4.30 (.170)
14.20 (.559) 3.70 (.145)
LEAD ASSIGNMENTS
Hexfet IGBT
2.40 (.094) 1.40 (.056) 0.80 (.031) 1 -LEAD
GateASSIGNMENTS
1 - Gate
2.00 (.079) 3X 1.00 (.039) 3X 0.40 (.016) 2 - Drain
1 - GATE 2 - Collector
2X 2 - DRAIN
0.25 (.010) M C A S 2.60 (.102) 3 - Source 3 - Emitter
3 - SOURCE
5.45 (.215) 2.20 (.087) 4 - Drain
4 - DRAIN4 - Collector
3.40 (.133)
2X 3.00 (.118)

TO-247AC Part Marking Information

EXAMPLE: T HIS IS AN IRFPE30
WIT H ASSEMBLY PART NUMBER
LOT CODE 5657 INT ERNATIONAL
ASSEMBLED ON WW 35, 2000 RECT IFIER IRFPE30

IN THE AS SEMBLY LINE "H" LOGO 035H

56 57
Note: "P" in assembly line DAT E CODE
position indicates "Lead-Free" ASSEMBLY YEAR 0 = 2000
LOT CODE WEEK 35
LINE H

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/