IHW20N120R2

Soft Switching Series

Reverse Conducting IGBT with monolithic body diode

Features: C
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers : G
E
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
1
• Qualified according to JEDEC for target applications PG-TO-247-3-21

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:
• Inductive Cooking
• Soft Switching Applications

Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package

IHW20N120R2 1200V 20A 1.55V 175°C H20R1202 PG-TO-247-3-21
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current IC A
TC = 25°C 40
TC = 100°C 20
Pulsed collector current, tp limited by Tjmax ICpul s 60
Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) - 60
Diode forward current IF
TC = 25°C 40
TC = 100°C 20
Diode pulsed current, tp limited by Tjmax IFpul s 30
Diode surge non repetitive current, tp limited by Tjmax IFSM
TC = 25°C, tp = 10ms, sine halfwave 50
TC = 25°C, tp ≤ 2.5µs, sine halfwave 130
TC = 100°C, tp ≤ 2.5µs, sine halfwave 120
Gate-emitter voltage VGE ±20 V
Transient Gate-emitter voltage (tp < 5 ms) ±25
Power dissipation TC = 25°C Ptot 330 W
Operating junction temperature Tj -40...+175 °C
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1
J-STD-020 and JESD-022

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Soft Switching Series

Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.45 K/W
junction – case
Diode thermal resistance, RthJCD 0.45
junction – case
Thermal resistance, RthJA 40
junction – ambient

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µA 1200 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 20 A
T j =2 5 °C - 1.55 1.75
T j =1 2 5° C - 1.75 -
T j =1 7 5° C - 1.85 -
Diode forward voltage VF V G E = 0V , I F = 2 0 A
T j =2 5 °C - 1.45 1.7
T j =1 2 5° C - 1.6 -
T j =1 7 5° C - 1.65 -
Gate-emitter threshold voltage VGE(th) I C = 0. 5m A, 5.1 5.8 6.4
VCE=VGE
Zero gate voltage collector current ICES V C E = 12 0 0V , µA
V G E = 0V
T j =2 5 °C - - 5
T j =1 7 5° C - - 2500
Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA
Transconductance gfs V C E = 20 V , I C = 20 A - 14.5 - S
Integrated gate resistor RGint none Ω

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Soft Switching Series

Dynamic Characteristic
Input capacitance Ciss V C E = 25 V , - 1887 - pF
Output capacitance Coss V G E = 0V , - 59 -
Reverse transfer capacitance Crss f= 1 MH z - 47 -
Gate charge QGate V C C = 96 0 V, I C =2 0 A - 143 - nC
V G E = 15 V
Internal emitter inductance LE - 13 - nH
measured 5mm (0.197 in.) from case

Switching Characteristic, Inductive Load, at Tj=25 °C

Value
Parameter Symbol Conditions Unit
min. typ. Max.
IGBT Characteristic
Turn-off delay time td(off) T j =2 5 °C , - 359 - ns
Fall time tf V C C = 60 0 V, I C = 2 0 A - 53 -
V G E = 0 /1 5 V,
Turn-on energy Eon R G = 15 Ω, - - -
2)
Turn-off energy Eoff L σ =1 8 0n H, - 1.2 -
2)
Total switching energy Ets C σ = 3 9p F - 1.2 - mJ

Switching Characteristic, Inductive Load, at Tj=175 °C

Value
Parameter Symbol Conditions Unit
min. Typ. Max.
IGBT Characteristic
Turn-off delay time td(off) T j =1 7 5° C - 427 - ns
Fall time tf V C C = 60 0 V, I C = 2 0 A, - 99 -
V G E = 0 / 15 V ,
Turn-on energy Eon R G = 1 5Ω , - - -
2)
Turn-off energy Eoff L σ =1 8 0n H , - 2.0 -
2)
Total switching energy Ets C σ =3 9 pF - 2.0 - mJ

2)
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

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Soft Switching Series

tp=1µs

60A 10µs

TC=80°C
20µs
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

10A
TC=110°C 50µs
40A

Ic
20A 1A 500µs

5ms
DC
0A
10Hz 100Hz 1kHz 10kHz 100kHz
1V 10V 100V 1000V
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of Figure 2. IGBT Safe operating area
switching frequency for hard (D = 0, TC = 25°C,
switching (turn-off) Tj ≤175°C;VGE=15V)
(Tj ≤ 175°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 15Ω)

40A
300W

250W 30A
IC, COLLECTOR CURRENT
Ptot, DISSIPATED POWER

200W

20A
150W

100W
10A

50W

0W 0A
25°C 50°C 75°C 100°C 125°C 150°C 25°C 50°C 75°C 100°C 125°C 150°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of Figure 4. DC Collector current as a function
case temperature of case temperature
(Tj ≤ 175°C) (VGE ≥ 15V, Tj ≤ 175°C)

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Soft Switching Series

50A 50A
VGE=20V
VGE=20V
15V
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

40A 15V 40A
13V
13V
11V
30A 11V 30A
9V
9V
7V
20A 7V 20A

10A 10A

0A 0A
0V 1V 2V 0V 1V 2V 3V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 175°C)

IC=40A
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

2.5V
50A
IC, COLLECTOR CURRENT

2.0V IC=20A
40A

1.5V
30A
IC=10A
20A 1.0V

TJ=175°C
10A 0.5V
25°C

0A 0.0V
0V 2V 4V 6V 8V 10V 0°C 50°C 100°C 150°C

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation
(VCE=20V) voltage as a function of junction
temperature
(VGE =15V)

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 IHW20N120R2
Soft Switching Series

1000ns

1000ns td(off)

td(off)
t, SWITCHING TIMES

t, SWITCHING TIMES
100ns
tf
100ns tf

0A 10A 20A 30A 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ=175°C, VCE=600V,
VCE=600V, VGE=0/15V, RG=15Ω, VGE=0/15V, IC=20A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE

6V
max.
t, SWITCHING TIMES

100ns tf 5V
typ.

4V
min.

3V

10ns
25°C 50°C 75°C 100°C 125°C 150°C 2V
-50°C 0°C 50°C 100°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as a
function of junction temperature function of junction temperature
(inductive load, VCE=600V, (IC = 0.5mA)
VGE=0/15V, IC=20A, RG=29Ω,
Dynamic test circuit in Figure E)

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Soft Switching Series

Eoff
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

3.0mJ
2.0mJ
Eoff

2.0mJ

1.0mJ

1.0mJ

0.0mJ
0.0mJ
20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω
0A 10A 20A 30A

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical turn-off energy as a Figure 14. Typical turn-off energy as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ=175°C, VCE=600V,
VCE=600V, VGE=0/15V, RG=15Ω, VGE=0/15V, IC=20A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

Eoff
2.0mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

1.5mJ

1.5mJ Eoff

1.0mJ
1.0mJ

0.5mJ 0.5mJ

0.0mJ
0.0mJ
25°C 50°C 75°C 100°C 125°C 150°C 600V 700V

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical turn-off energy as a Figure 16. Typical turn-off energy as a
function of junction temperature function of collector emitter
(inductive load, VCE=600V, voltage
VGE=0/15V, IC=20A, RG=15Ω, (inductive load, TJ=175°C,
Dynamic test circuit in Figure E) VGE=0/15V, IC=20A, RG=15Ω,
Dynamic test circuit in Figure E)

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Soft Switching Series

Ciss

1nF
VGE, GATE-EMITTER VOLTAGE

240V
10V 960V

c, CAPACITANCE
100pF
Coss
5V

Crss

0V 10pF
0nC 50nC 100nC 150nC 0V 10V 20V
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=20 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)

D=0.5
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

-1 0.2
10 K/W
-1 0.2
0.1 10 K/W R,(K/W) τ, (s)
0.0788 1.04*10-1
0.05 R,(K/W) τ, (s) 0.183 1.52*10-2
0.1
0.0578 1.16*10-1 0.162 9.51*10-4
0.02 0.05 0.0505 4.95*10-5
0.1699 1.88*10-2
0.1392 2.03*10-3
-2
10 K/W 0.01 0.087 2.38*10-4 0.02 R1 R2

R1 R2 0.01
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
single pulse -2
10 K/W
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 single pulse

-3
10 K/W
10µs 100µs 1ms 10ms 100ms 10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH tP, PULSE WIDTH

Figure 19. IGBT transient thermal Figure 20. Diode transient thermal
resistance impedance as a function of pulse width
(D = tp / T) (D=tP/T)

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Soft Switching Series

35A 2.0V
IF=40A
30A

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

1.5V 20A
25A

TJ=25°C 10A
20A
175°C 1.0V
15A

10A
0.5V
5A

0A 0.0V
0.0V 0.5V 1.0V 1.5V 2.0V 0°C 50°C 100°C 150°C

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 21. Typical diode forward current as Figure 22. Typical diode forward voltage
a function of forward voltage as a function of junction temperature

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 IHW20N120R2
Soft Switching Series

PG-TO247-3-21

Please refer to mounting instructions for assembly.

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Soft Switching Series

i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS 10% Ir r m t
QF
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

τ1 τ2 τn
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Figure B. Definition of switching losses
Leakage inductance Lσ a n d Stray
capacity C σ

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Soft Switching Series

Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 5/10/06.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Power Semiconductors 12 Rev. 1.2 May 06