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    Group 8 - ECELXM1L - Lab05

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    Hannah Visitacion
    The document describes an experiment on the common emitter configuration of a BJT. It details the objective, theoretical background, materials, procedure, observations, conclusions and questions. The experiment confirmed expected transistor behavior but found discrepancies between measured and calculated voltages, highlighting the need for precise measurement techniques.

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    Download as PDF, TXT or read online from Scribd

    Group 8 - ECELXM1L - Lab05

    Uploaded by

    Hannah Visitacion
    10 views3 pages
    The document describes an experiment on the common emitter configuration of a BJT. It details the objective, theoretical background, materials, procedure, observations, conclusions and questions. The experiment confirmed expected transistor behavior but found discrepancies between measured and calculated voltages, highlighting the need for precise measurement techniques.

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    Group 8_ECELXM1L_Lab05

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    The document describes an experiment on the common emitter configuration of a BJT. It details the objective, theoretical background, materials, procedure, observations, conclusions and questions. The experiment confirmed expected transistor behavior but found discrepancies between measured and calculated voltages, highlighting the need for precise measurement techniques.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    10 views3 pages

    Group 8 - ECELXM1L - Lab05

    Uploaded by

    Hannah Visitacion
    The document describes an experiment on the common emitter configuration of a BJT. It details the objective, theoretical background, materials, procedure, observations, conclusions and questions. The experiment confirmed expected transistor behavior but found discrepancies between measured and calculated voltages, highlighting the need for precise measurement techniques.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    Experiment no.

    5
    BJT COMMON EMITTER CONFIGURATION

    OBJECTIVE/S:
    The activity aims to study the operation and working principle of CE amplifier.

    THEORETICAL BACKGROUND:

    The bipolar junction transistor (BJT) has three terminals, so can be used in three different
    configurations with one terminal common to both input and output signal.

    Common emitter configuration is common to both input and output signal. The arrangement is the
    same to a PNP transistor. Used in this way the transistor has the advantages of a medium input
    impedance, high voltage gain, and high current gain.

    MATERIALS REQUIRED:
    Power Supply, Digital Multimeter
    Resistors ( 1 pc. 40kΩ ½ W, 30kΩ ½ W, 6.8kΩ ½ W, 6.8kΩ ½ W), Transistors (1 pcs NPN 2N222)

    PROCEDURE:

    1. Connect the circuit that has shown in Figure 9-1


    2. Set the supply voltage to 15V

    Figure 6.1 Common Emitter Configuration

    3. Measure the DC voltages and current that shown in table 9-1 and 9-2.
    NATIONAL University 1
    ELECTRONIC DEVICES AND CIRCUITS

    4. Compare your result to the calculated value.

    Table 9-1. DC Currents


    IB IC IE

    Measured 0.32 mA 0.86 mA 0.86 mA


    Computed 0.375 mA 0.5 mA 0.79 mA
    Percent Error (0.32 − 0.375) (0.86 − 0.5) (0.86 − 0.79)
    × 100% × 100% × 100%
    0.375 0.5 0.79
    = −14.67% = 72% = 8.86%

    Table 9-2. DC Voltages


    VB VC VE VBE VCE
    Measured 6V 5.14 V 5.41 V 0.6 V 3.459 V
    Computed 𝑉𝐵 = 𝑉𝐵 𝑉𝐶 = 𝑉𝐶 𝑉𝐸 𝑉𝐵𝐸 𝑉𝐸
    =6𝑉 = 5.14 𝑉 = 0.79 𝑚𝐴 =6𝑉 = 5.14 𝑉
    × 6.8𝑘Ω − 2.908 𝑉 − 2.908 𝑉
    = 2.908 𝑉 = 3.4 𝑉 = 2.232 𝑉

    Percent Error (6 − 6) (5.14 − 5.14) (5.41 − 2.908) (0.6 − 3.4) (3.459 − 2.232)
    6 5.14 2.908 3.4 2.232
    × 100% × 100% = 0% × 100% × 100% × 100%
    = 0% = 85.86% = −83.53% = 55.05%

    Computations of percent error:

    𝑀𝑒𝑎𝑠𝑢𝑟𝑒𝑑−𝐶𝑜𝑚𝑝𝑢𝑡𝑒𝑑
    Percent Error = ∗ 100
    𝐶𝑜𝑛𝑝𝑢𝑡𝑒𝑑

    OBSERVATION:

    During the experiment, the transistor operated within expected parameters, exhibiting typical
    characteristics of a common emitter configuration. The measured values of base current (IB), collector
    current (IC), and emitter current (IE) were reasonably close to the computed values, indicating that the
    transistor was biased properly. However, there were notable discrepancies between the measured and
    computed values of certain voltages, particularly VBE (the voltage across the base-emitter junction) and
    VCE (the voltage across the collector-emitter junction). These discrepancies suggest potential inaccuracies
    in either the measurement techniques employed or the theoretical assumptions made in the calculations.
    Additionally, variations in component tolerances or experimental conditions may have contributed to the
    observed differences. Overall, while the transistor exhibited expected behavior, the discrepancies in voltage
    measurements highlight the importance of meticulous measurement techniques and thorough
    understanding of the underlying principles.

    Angeles, M., Nalunat, J. (2023)


    NATIONAL University 2
    ELECTRONIC DEVICES AND CIRCUITS

    CONCLUSION:
    The BJT common emitter configuration experiment offered valuable insights into the operational
    characteristics of bipolar junction transistors. It confirmed the expected benefits of this setup, such as
    medium input impedance, high voltage gain, and high current gain. While the experiment successfully
    demonstrated typical transistor behavior, differences in measured and calculated voltages, especially VBE
    and VCE, highlighted the need for precise measurement techniques and a thorough grasp of theoretical
    concepts. Possible reasons for discrepancies, like component variations or experimental conditions,
    require further exploration to improve experimental procedures and accuracy. This experiment
    emphasizes the intricacies of practical electronics testing and the continuous quest for precise
    measurement and analysis. dfdsdfsfdgdklhdghjdlfjghdkfhgdsfsdhdkjfghdsfkhshghsdkhfgkdfgdshgdskgd
    QUESTIONS:
    1. Discuss the effect of the input resistance on the bias circuit
    The input resistance of the bias circuit in a Bipolar Junction Transistor (BJT) common
    emitter configuration has a significant effect on the transistor's operation. A higher input resistance
    can provide better stability in biasing the transistor, reducing the influence of external factors like
    temperature variations. It also affects the gain of the transistor circuit, with a higher input resistance
    generally resulting in higher voltage gain.
    2. Discuss the stability of voltage divider bias
    The stability of voltage divider biasing is essential for maintaining the transistor's operating
    point despite variations in temperature and transistor parameters. This biasing method relies on
    resistors to establish a stable base bias voltage, but variations in resistor values, particularly due
    to temperature changes, can lead to shifts in the bias point and affect the transistor's operating
    conditions, potentially causing signal distortion. To enhance stability, careful selection of resistor
    values and the addition of a bypass capacitor across the emitter resistor can help mitigate these
    effects, ensuring consistent performance despite external influences.
    3. Discuss voltage divider bias for a pnp transistor
    In a common emitter configuration experiment involving a PNP transistor, voltage divider
    biasing is employed to establish a stable operating point despite variations in temperature and
    transistor parameters. This method utilizes two resistors connected between the positive supply
    voltage (Vcc) and the base terminal, with the emitter connected to ground. The voltage across the
    base resistor determines the bias voltage for the base-emitter junction. Stability is achieved through
    careful selection of resistor values and the potential addition of a bypass capacitor across the
    emitter resistor to compensate for variations in transistor parameters. Overall, voltage divider
    biasing for a PNP transistor in a common emitter configuration aims to ensure consistent
    performance by maintaining a stable operating point.

    Angeles, M., Nalunat, J. (2023)

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