DD D GS: Jfet DC Source Data and Result
DD D GS: Jfet DC Source Data and Result
DD D GS: Jfet DC Source Data and Result
JFET DC SOURCE
ID
VDD VGS
VGS = 0 VGS = -0.5 VGS = -1 VGS = -1.5
0 0 0.51pA 1pA 1.5pA
2 2.856mA 1.068mA 0.138uA 22.20-4uA
4 2.96mA 1.108mA 0.144uA 44.409uA
6 3.064mA 1.147mA 0.149uA 0
8 3.167mA 1.186mA 0.154uA 0
10 3.271mA 1.225mA 0.159uA 0
12 3.375mA 1.264mA 0.164uA 177.636pA
TABLE #1
CURRENT ID, CHARACTERISTIC OF JFET
Chart Title
4
3.5
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 12
FIGURE #1
GRAPH FOR TABLE #1
CHARACTERISTIC OF JFE
IMAGE #1
EXPERIMENT #1 CIRCUIT DIAGRAM AND MEASURED RESULT
OBSERVATION
According to the data we gathered, as the drain current increases the gate
source voltage also increases. As time passes by, a certain peak will be
reached. Which causes the pinch-off voltage and the drain current will not
change. Minimal changes might still occur, but it will not make large changes
to the values gathered for the data of the experiment. The changes of the
values are visible in the plotted data. The linearity of the peak voltage and
drain current is constant once the gate source voltage reaches the 14.4V
value.
CONCLUSION
The linearity of the 𝐼𝐷due to the peak value it reached. However, as the drain
source increases, there is also a limit to it with respect to 𝑉𝐷𝑆slows down.
The Q-point varies due to the gate-source voltage. If the 𝑉𝐷𝑆 is low then the
𝐼𝐷 is constant. 𝑉𝐷𝑆and 𝑉𝐺𝑆controls the drain current 𝐼𝐷. Increasing drain
source voltage 𝑉𝐷𝑆 also increases.
GENERALIZATION
The junction field transistor has no PN-junctions but instead has a narrow
piece of high resistivity semiconductor material forming a “Channel”. It is
constructed using the long channel of semiconductor material. If the JFET
contains a great number of positive charges or somehow called as holes, it is
a P-type JFET. While if the JFET contains a great number of negative charges
somehow called electrons, it is a N-type
JFET.
GUIDE QUESTIONS
2. Explain the procedure you would use to verify experimentally that there is
no gate current in the range over which a JFET is normally operated.
Measure the current across the gate with varying 𝑉𝐷𝐷and 𝑉𝐺𝑆 to prove that
there is no current flowing through it. It means that the JFET is operating
normally.
The pinch-off voltage becomes 1V (𝑉𝐷𝑆). Just as shown in the data, when the
𝑉𝐺𝑆 becomes more negative, 𝑉𝑃is decreasing. It is where 𝐼𝐷 is constant.
𝐼𝐷𝑆𝑆varies at the value of 𝑉𝐺𝑆. 𝐼𝐷𝑆𝑆is located in which the 𝐼𝐷become constant.
According to the graph, 𝐼𝐷𝑆𝑆= 2.908 mA for 𝑉𝐺𝑆= 0V and 𝑉𝐷𝑆 = 3𝑉.
5. Referring to your data, and your drain characteristics, compare the level
of ID, for each value of VGS, what conclusion can you draw?
Small quantity change occur when changing the 𝐼𝐷.While, when changing the
𝑉𝐺𝑆causes large changes on the data. Few milliamperes change when 𝐼𝐷is
changed.
7. What values of 𝑽𝑮𝑺 off 𝑰𝑫?
The gathered datas did not match. The computed and measured value is not
accurate.
Experiment #2
COMMON-EMITTER AMPLIIER
Effect on IC of
STEP IB IC
increasing IB
3 Maximum IC 2
Collector
STEP 143.024uA -30.002mA
Voltage
4 30uA -6.514mA 6V
5 40uA -8.667mA 6V
6 215.3 β= ΔIC/ΔIB
TABLE #2
CURRENT IB AND IC
β IN NPN TRANSISTOR
IMAGE #2
EXPERIMENT #2 CIRCUIT DIAGRAM AND MEASURED RESULT
OBSERVATION
𝐼𝐵 is the input or base current. In the experiment, the 𝐼𝐵 is increased
significantly
to the output or collector current 𝐼𝐶. As the current gain increases more than
200, you can easily notice the difference. The current also can be easily
observed. The value of the current starts from microamperes to milliamperes.
CONCLUSION
According to the data gathered, BJT is a current controlled device. When the
input current changes, all of the other values change. The input current is
proportional to the output current. It means that when the input current
increases, the output current also increases and vice versa.
GENERALIZATION
The Bipolar Junction Transistor increases the input current. It is used in
electronics that needs a high amount of current. The current is amplified in
the circuit by the transistor gain or the amplification factor which is the
beta.
GUIDE QUESTIONS
1. Define Beta and Alpha.
Beta is the ratio of the collector current to base current and it is usually a
large number. While the Alpha, is the ratio between the collector current to
emitter current. Both alpha and beta are both ratios.
3. Explain how you would measure the beta of a PNP transistor. Draw the
circuit diagram of the test setup. It can be calculated if the currents, 𝐼𝐵
(the base current) and the 𝐼𝐸 (the emitter current) or 𝐼𝐶 (the collector
current) are known. Using the formula Beta =𝐼𝐶/𝐼𝐵
Parameter VE VC IE IC
Expected
0.7V 8.17V 830uA ≈830uA
Value
Measure
0.65V 8.17V 835.24uA 829.593uA
Value
Parameter Value
IE Calculated 835uA
IC Calculated ≈835uA
TABLE #4
CALCULATED IE AND IC
OBSERVATION
In the experiment, I can say that the input voltage is higher that the output
voltage. It means that the voltage gain is less than 1. The oscilloscope shows
us the inphase waveform. Also, we can see the peak of the wave form reached on
the same time but different values.
CONCLUSION
I can conclude that the emitter follower circuit has higher current gain, the
voltage gain is lower up to the point in almost reach 1. The input resistance
is very high while the output resistance is low. And also It draws a little
current from the source so there is a very small voltage drop across the
internal resistance.
GENERALIZATION
GUIDE QUESTIONS
1. What are the AC characteristics of a common base amplifier?
The characteristics of a common base amplifier: (a) high voltage gain, (b) low
current gain, © low power gain, (d) input and output phase relation is 0, (e)
it has low input impedance, and (f) it has high output impedance.
𝐴𝑉 = 𝑉𝑂𝑈𝑇/𝑉𝐼𝑁
𝐴𝑉 = (𝐼𝐶)(𝑅𝐶)/ (𝐼𝐸)(𝑅𝐸)
𝐴𝑉 = 𝑅C/RE
Experiment #5
AC COMMON-BASE AMPLIFIER
Data and Result:
Gain=
Vout (V) Vin (V) Vout/ VAB (V) Iin (A)
Rin Iin2 Rin
(Ω) (W)
Vin
210.647mV 211.270mV 0.997 145.541mV 9.703uA 15kΩ 1.412uW
TABLE #6
VOLTAGE GAIN, INPUT IMPEDANCE AND INPUT POWER
RL= Rout
Vout (V) Vout/2 (V)
(Ω) Vout 2 /Rout (W) Power Gain
119.6uW
100mV 50mV 20.903Ω 0.25
478.4uW
TABLE #7
POWER GAIN, VOLTAGE OUT AND LOAD RESISTANCE
IMAGE #4
EXPERIMENT #5 CIRCUIT DIAGRAM AND MEASRUED RESULT
OBSERVATION
We observed that the emitter input voltage VE is very low, the collector output voltage is very high
compared to V1 and the current in the emitter current to collector current is very small and the gain is
approximately equal to 1. I also observed that there are many factors neglected in the circuit like the
values that cannot affect the performance of the circuit. The oscilloscope is used to analyze the signals.
On the other hand, the power gain increased from 98.62𝜇𝑊to 1.073𝑚𝑊. The output voltage resulted in
a power gain of 10.9.
CONCLUSION
I can conclude that the AC base current amplifies the voltages not the current. The common base
amplifier is non-inverting and the current gain is not exceeding 1 so it means that the output current in
this configuration is decreasing The output voltage is much bigger in the input voltage, so it means the
voltage amplified.
GENERALIZATION
It is the lead widely used amplifier circuit because it only provides good voltage gain whereas current is
unity and it has very low input impedance hence it is preamplifiers in the microphone base circuit and
for impedance matching application of frequency amplifier.Common collector circuit is also known as an
emitter follower. It has a high input impedance and low output impedance. It provides an ideal buffer
stage used in many circuits. It has a very straightforward circuit.
GUIDE QUESTIONS
The common collector configuration has current gain but no voltage gain. While emitter follower has
both current and voltage gain.
2. Emitter-follower is primarily used to match a high impedance source to allow impedance load, why is
that so?
The emitter follower has a high impedance used as a voltage buffer. Used in impedance matching
applications due to the high impedance of the emitter follower.
3. Referring to your experiment data, what can you say about the voltage gain of the emitter-follower?
The gain of an emitter follower is almost 1 or less than 1. It can also be declared as “no gain” voltage.
Due to its minimal changes in the results. Rather, it keeps it's input voltage.
4. Is the size of bias resistor R1? In Fig. 5.1 affect input impedance of the circuit? Justify your answer.
Yes, due to the parallel connection. The internal resistance is dependent in the circuit's input
impedance.
5. Comment about the relationship between the phase of the input and output waveforms in the
emitter-follower.
The in-phase relationship on the emitter follower waveform does not have the same peak level.
6. Assume that Vout / Vin = 1. Write the approximate formula for power gain and explain in detail how
you can determine the input impedance of the experimental amplifier.
Since,
1 =𝑉𝑜𝑢𝑡/𝑉𝑖𝑛
And,
𝐴𝑝 =
(𝑉𝑜𝑢𝑡^2) (𝑅𝑜𝑢𝑡)/(𝑉𝑖𝑛^2)(𝑅𝑖𝑛)
𝐴𝑝 = 𝑅𝑜𝑢𝑡/𝑅𝑖𝑛
Then,
𝑅𝑖𝑛 = 𝑅𝑜𝑢𝑡/𝐴p