Lecture 4 - MOS Capacitors

Metal Insulator Semiconductor
(MIS,MOS) Capacitances
Lecture-3
Outline
• Metal Insulator Semiconductor (MIS)
– Ideal Energy band diagram
– Energy band diagram under bias condition
– Surface space charge region
– Ideal MIS capacitance curve
• MOS Capacitors
– Interface traps
– MOS current-voltage (CV) curve
– Flat-band voltage
– Threshold voltage
2
MIS Capacitors
• “Metal” can be metal,
or more frequently
heavily doped poly-Si
• “Oxide” is usually
silicon dioxide, but can
be some other high k
dielectric
• “Semiconductor” is
usually Si, SiGe, SiC,
GaN and others Fig. 1 Chapter – 4, Page # 198
Physics of Semiconductor device, 3rd Edition
S . M. Sze
3
Ideal Energy Band diagram of MIS
At Equilibrium (V=0 )
Ec
Ef
Ev
Fig. 2 Chapter – 4,
Page # 199
Physics of Semiconductor device,
3rd Edition
S . M. Sze
4
Energy Band Diagram (under bias conditions)
5
Energy band diagram under bias conditions
6
Surface Space-Charge Region
Ψs -- Surface Potential
Fig. 4 Chapter – 4, Page # 200

Physics of Semiconductor device, 3rd Edition
S . M. Sze
7
Surface Space-Charge Region
8
Band-bending (in P-type Semiconductor)
• At inversion
Surface potential ψs =2φB ~ 0.7- 0.8 V
• Threshold voltage: Gate Voltage required to just

produce inversion
4qεNAφ
VT = 2φB + B
+ VFB ~ 0.3 - 1.0 V
C OX
9
Ideal MIS Capacitance Curve
Variation of space
charge density as
a function of ψs
(For a P-type Si with 4 x
1015 cm-3 at RT)
Page # 203
Physics of Semiconductor device,
3rd Edition by S . M. Sze
10
Ideal MIS curves
Electric field distribution

Band diagram under strong inversion
Potential distribution
11
Charge distribution
Ideal MIS curves
Low frequency
Intermediate
frequency
High frequency
High frequency with

deep depletion
Fig. 7 , Ch- 4 , p.g. # 206 12

Important relations
Space charge density (Qs)
Depletion Approximation (WD)
Depletion Capacitance (CD)
13
Depletion layer vs. Impurity Concentration
under a heavy-
inversion condition
Page # 208
Physics of Semiconductor
device, 3rd Edition by S . M.
Sze
14
MOS Capacitors
(All MIS capacitors, the metal-oxide-silicon (MOS)
capacitor is the most practical and important)
15
MOS Capacitors
MOS capacitors are
• Basic building blocks of CMOS transistors
• Purify the basic physics of MOS transistors
• Excellent tools for measurement
• Used as circuits,
– DRAMs, Flash etc.
16
Interface traps
Page # 213
Sze
17
Interface trap density
interface-trap charge:
interface-trap density distribution:
Interface-trap capacitance:
18
MOS C-V curves
Cox = Oxide Capacitance

= ox / dox
CD = Depletion Capacitance
= s / XD
XD = Depletion width in Si
=  (2.s.s / q.Na)
19
Depletion Layer thickness
(at the threshold inversion)
20
Example-1
21
Example -2
22
23
Flat Band Voltage
• Flat-band voltage is defined as the applied gate
voltage such that there is no band bending in
the semiconductor and, as a result, zero net
space charge in this region.
24
Flat Band Voltage (Cont.)
If a gate voltage is applied, the potential drop across the gate

oxide and semiconductor changes as:
25
Flat Band Voltage Condition
• Charge distribution in MOS capacitor at flat
band
• Voltage across the oxide
• Flat band voltage for the MOS device
26
Threshold Voltage
• Gate voltage required to achieve the threshold
inversion point
• Charge distribution at the threshold inversion
27
Threshold voltage
• Where VTN is the threshold voltage that creates

the electron inversion layer charge and ᵠs = 2ɸfp
28
Carrier Transport
Chapter – 4, Page # 227

Physics of Semiconductor device, 3rd Edition by S . M. Sze
29
Carrier Transport

30
Non-Equilibrium and Avalanche

31
Breakdown (MOS) vs. Doping Concentration
Edge effect causing

lower breakdown is
included

Sze
32
Dielectric Breakdown
Common concern in MOS device is reliability,, Under large bias, some current will conduct
through the insulator, as tunneling current. These energetic carriers cause defects in the
bulk of the dielectric film. When these defects reach a critical density level,, catastrophic
breakdown occurs.
Fig. 30 Chapter – 4, Page # 235 Time to breakdown t BD vs. oxide field

Fig. 31 Chapter – 4, Page # 236
Physics of Semiconductor device, 3rd Edition by S . M. Sze 33
Thank you !
34

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Metal Insulator Semiconductor

Fig. 4 Chapter – 4, Page # 200

• Threshold voltage: Gate Voltage required to just

Electric field distribution

High frequency with

Fig. 7 , Ch- 4 , p.g. # 206 12

Depletion Approximation (WD)

Depletion Capacitance (CD)

interface-trap density distribution:

Cox = Oxide Capacitance

If a gate voltage is applied, the potential drop across the gate

• Voltage across the oxide

• Flat band voltage for the MOS device

• Where VTN is the threshold voltage that creates

Chapter – 4, Page # 227

Chapter – 4, Page # 228

Chapter – 4, Page # 231

Edge effect causing

Chapter – 4, Page # 232

Fig. 30 Chapter – 4, Page # 235 Time to breakdown t BD vs. oxide field

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