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    Metal Oxide Field Effect Transistor (MOSFET) : Lecture-5

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    Asim Javaid
    The document discusses the Metal Oxide Field Effect Transistor (MOSFET). It describes the basic MOSFET structure including the gate, source, drain and channel. It explains how an inversion charge is created in the channel when a threshold voltage is exceeded. The document also outlines the current-voltage characteristics of MOSFETs and different types of MOSFETs including enhancement mode and depletion mode.

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    Metal Oxide Field Effect Transistor (MOSFET) : Lecture-5

    Uploaded by

    Asim Javaid
    54 views32 pages
    The document discusses the Metal Oxide Field Effect Transistor (MOSFET). It describes the basic MOSFET structure including the gate, source, drain and channel. It explains how an inversion charge is created in the channel when a threshold voltage is exceeded. The document also outlines the current-voltage characteristics of MOSFETs and different types of MOSFETs including enhancement mode and depletion mode.

    Original Description:

    transistor MOS

    Original Title

    Lecture 5_MOS Transistor

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    The document discusses the Metal Oxide Field Effect Transistor (MOSFET). It describes the basic MOSFET structure including the gate, source, drain and channel. It explains how an inversion charge is created in the channel when a threshold voltage is exceeded. The document also outlines the current-voltage characteristics of MOSFETs and different types of MOSFETs including enhancement mode and depletion mode.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    54 views32 pages

    Metal Oxide Field Effect Transistor (MOSFET) : Lecture-5

    Uploaded by

    Asim Javaid
    The document discusses the Metal Oxide Field Effect Transistor (MOSFET). It describes the basic MOSFET structure including the gate, source, drain and channel. It explains how an inversion charge is created in the channel when a threshold voltage is exceeded. The document also outlines the current-voltage characteristics of MOSFETs and different types of MOSFETs including enhancement mode and depletion mode.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 32

    Metal Oxide Field Effect

    Transistor (MOSFET)

    Lecture-5
    Outline
    • Field Effect Transistor (FET)
    o Trends of Gate Dimension
    o Difference between FET and BJT
    o FET’s family
    o FET’s Types
    o FETs Channel

    • Metal Oxide Field Effect Transistor (MOSFET)


     Basic MOSFET
     Inversion Charge (Channel Creation)
     Current – Voltage (I-V) Characteristics
     MOSFET Types
     MOSFET Comparison
    2
    Trend of FET Gate Dimensions

    Minimum gate dimension


    in commercial integrated
    circuit

    Fig. 1 Chapter – 6, Page # 294


    Physics of Semiconductor device, 3rd Edition
    S . M. Sze
    3
    Difference b/w FET & BJT

    Fig. 2 Chapter – 6, Page # 295


    Physics of Semiconductor device, 3rd Edition
    S . M. Sze

    4
    FETs Family

    Fig. 3, Chapter – 6, Page # 295


    Physics of Semiconductor device, 3rd Edition
    S . M. Sze
    5
    FET’s Channel

    Buried Channel Surface Inversion Channel


    MESFETs and JFETs are buried-channel MODFETs, MOSFETs are surface-
    devices channel devices

    • Buried channels are based on bulk • The surface inversion channel is a


    conduction and, thus, are free of two-dimensional charge sheet of
    surface effects such as scattering and thickness in the order of few nm
    surface defects, resulting in better while buried layer is thicker
    carrier mobility.

    • for depletion-mode device, it is


    6
    common to use buried channel
    FET’s Types

    • Junction FET (JFET)

    • Metal-Oxide-Semiconductor FET (MOSFET)

    • Metal-Semiconductor FET (MESFET)

    7
    FET Types

    • Junction FET (JFET)

    8
    FET Types
    MESFET

    9
    FET Types
    • Metal-Oxide-Semiconductor FET (MOSFET)

    10
    MOSFET

    11
    MOSFET Structure

    Fig. 5,6 Chapter – 6, Page # 297-8


    Physics of Semiconductor device, 3rd Edition
    S . M. Sze
    12
    MOSFET Device
    Transistor (Bell Labs)

    13
    Inversion Charge in Channel

    Fig. 7 Chapter – 6, Page #


    2D-band diagram of n-channel MOSFET.
    299
    (a) Device configuration Physics of Semiconductor device, rd
    14 3
    (b) Flat-band zero-bias equilibrium Edition S . M. Sze
    Inversion Charge in Channel

    2D-band diagram of n-channel MOSFET


    (c) Equilibrium condition (VD = 0) under gate bias(Vg > 0) Fig. 7 Chapter – 6, Page #
    d) Non-equilibrium condition under both gate and drain 299
    biases Physics of Semiconductor device,
    15 3
    rd

    Edition S . M. Sze
    Inversion Charge in Channel

    Comparison of charge
    distribution and energy-
    band variation of an
    inverted p-region
    (a) equilibrium and
    (b) Non-equilibrium at drain end

    Fig. 8 Chapter – 6, Page # 300


    Physics of Semiconductor device, 3rd
    Edition S . M. Sze

    16
    Inversion Charge in Channel
    Total semiconductor surface charge is then obtained from Gauss' law

    Debye length is Surface potential w. r. t bulk

    Inversion charge per unit area Qn, (after strong inversion)

    17
    Current-Voltage (I-V) Characteristics

    18
    I-V Characteristics

    19
    Ideal Output Characteristics

    Fig. 9 Chapter – 6, Page # 303


    Physics of Semiconductor device, 3rd Edition
    S . M. Sze 20
    I-V Characteristics

    21
    Ideal Transfer Characteristics

    22
    Field-Dependent Mobility
    (Two-Piece Linear Approximation)

    The Critical Electric


    field (Ec)
    Ec = vsat / µ
    Vsat - saturation velocity
    µ - Low field mobility

    Fig. 11 Chapter – 6, Page # 307


    Physics of Semiconductor device, 3rd Edition
    S . M. Sze
    23
    Field-Dependent Mobility:
    (Two-Piece Linear Approximation)

    Surface potential
    M is a function of doping concentration and oxide thickness

    Dielectric constant
    Fermi level (intrinsic Fermi level)

    24
    Threshold Voltage

    When a substrate bias is applied

    Back-substrate voltage

    25
    Sub-Threshold
    When the gate bias is below the threshold and the semiconductor
    surface is in weak inversion or depletion, the corresponding drain
    current is called the sub-threshold current.

    The subthreshold region tells how sharply the current drops with
    gate bias

    • important for low-voltage (MOSFET used as a switch in digital logic and


    memory applications)

    In weak inversion and depletion,


    The electron charge is small, thus, the drift current is low.
    Hence, the drain current is dominated by diffusion current only.

    26
    Sub-Threshold Region

    27
    MOSFET Type

    Versions of MOSFETs based on their output and transfer characteristics


    Fig. 4, Chapter – 6, Page # 297
    Physics of Semiconductor device, 3rd Edition
    S . M. Sze
    28
    MOSFET Types

    Versions of MOSFETs; their output and transfer


    characteristics
    Fig. 4, Chapter – 6, Page # 297
    Physics of Semiconductor device, 3rd Edition
    S . M. Sze
    29
    MOSFET Symbols

    Enhancement Mode Enhancement Mode

    Depletion Mode Depletion Mode


    30
    MOSFET Comparison

    31
    Thank you!

    32

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