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    Nte 2371

    Uploaded by

    Krista Tran
    This document provides specifications for an NTE2371 MOSFET transistor. It is a p-channel, enhancement mode MOSFET in a TO-220 package for high-speed switching applications. The document lists maximum ratings, electrical characteristics, and dimensions for the transistor.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Nte 2371

    Uploaded by

    Krista Tran
    99 views3 pages
    This document provides specifications for an NTE2371 MOSFET transistor. It is a p-channel, enhancement mode MOSFET in a TO-220 package for high-speed switching applications. The document lists maximum ratings, electrical characteristics, and dimensions for the transistor.

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    nte2371(1)

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    This document provides specifications for an NTE2371 MOSFET transistor. It is a p-channel, enhancement mode MOSFET in a TO-220 package for high-speed switching applications. The document lists maximum ratings, electrical characteristics, and dimensions for the transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    99 views3 pages

    Nte 2371

    Uploaded by

    Krista Tran
    This document provides specifications for an NTE2371 MOSFET transistor. It is a p-channel, enhancement mode MOSFET in a TO-220 package for high-speed switching applications. The document lists maximum ratings, electrical characteristics, and dimensions for the transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    NTE2371

    MOSFET
    PCh, Enhancement Mode
    High Speed Switch
    TO220 Type Package

    Features: D
    D Dynamic dv/dt Rating
    D Repetitive Avalanche Rated
    D PChannel
    D Fast Switching
    G
    D Ease of Paralleling
    D Simple Drive Requirements
    S
    Absolute Maximum Ratings:
    Continuous Drain Current (VGS = 10V), ID
    TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19A
    TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13A
    Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A
    Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
    Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C
    GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
    Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mJ
    Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19A
    Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V/ns
    Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +175C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +175C
    Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C
    Mounting Torque (632 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
    Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W
    Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W
    Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W
    Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
    Note 2. VDD = 25V, starting TJ = +25C, L = 2.7mH, RG = 25 , IAS = 19A
    Note 3. ISD  19A, di/dt  200A/s, VDD  V(BR)DSS, TJ  +175C
    Note 4. Pules Width  300s, Duty Cycle  2%.
    Rev. 1013
    Electrical Characteristics: (TJ = +25C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    DraintoSource Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V
    Breakdown Voltage Temp. Coefficient  V(BR)DSS Reference to +25C, ID = 1mA 0.087 V/C
     TJ
    Static DraintoSource OnResistance RDS(on) VGS = 10V, ID = 11A, Note 4 0.20 
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 4.0 V
    Forward Transconductance gfs VDS = 50V, ID = 11A, Note4 6.2 mhos
    DraintoSource Leakage Current IDSS VDS = 100V, VGS = 0V 100 A
    VDS = 80V, VGS = 0V, TJ = +150C 500 A
    GatetoSource Forward Leakage IGSS VGS = 20V 100 nA
    GatetoSource Reverse Leakage IGSS VGS = 20V 100 nA
    Total Gate Charge Qg ID = 19A, VDS = 80V, VGS = 10V, 61 nC
    Note 4
    GatetoSource Charge Qgs 14 nC
    GatetoDrain (Miller) Charge Qgd 29 nC
    TurnOn Delay Time td(on) VDD = 50V, ID = 19A, RG = 9.1 , 16 ns
    RD = 2.4 , Note 4
    Rise Time tr 73 ns
    TurnOff Delay Time td(off) 34 ns
    Fall Time tf 57 ns
    Internal Drain Inductance LD Between lead, .250in. (6.0) mm from 4.5 nH
    package and center of die contact
    Internal Source Inductance LS 7.5 nH
    Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 1400 pF
    Output Capacitance Coss 590 pF
    Reverse Transfer Capaticance Crss 140 pF

    SourceDrain Ratings and Characteristics:


    Parameter Symbol Test Conditions Min Typ Max Unit
    Continuous Source Current (Body Diode) IS 19 A
    Pulsed Source Current (Body Diode) ISM Note 1 72 A
    Diode Forward Voltage VSD TJ = +25C, IS = 3.5A, VGS = 0V, 5.0 V
    Note 3
    Reverse Recovery Time trr TJ = +25C, IF = 3.5A, 130 260 ns
    di/dt = 100A/s, Note 3
    Reverse Recovery Charge Qrr 0.35 0.70 C
    Forward TurnOn Time ton Intrinsic turnon time is neglegible (turnon is dominated by LS+LD)

    Note 1. Repetitive rating; pulse width limited by maximum junction temperature.


    Note 4. Pulse width  300s; duty cycle  2%.
    .420 (10.67)
    Max

    .110 (2.79)

    .147 (3.75) Dia Max .500


    (12.7)
    Max

    .250 (6.35)
    Max

    .500
    (12.7)
    Min
    .070 (1.78) Max

    Gate Source

    .100 (2.54) Drain/Tab

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