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The document discusses different types of sensors used in biomedical applications including resistive, inductive, capacitive, piezoelectric and temperature sensors. It also covers topics such as transducers, Wheatstone bridges, strain gages and ultrasound imaging.

Some common types of sensors discussed include resistive sensors like strain gages, displacement sensors, temperature sensors like thermistors and thermocouples, and electromagnetic radiation sensors.

Piezoelectric sensors convert mechanical strain into an electrical signal based on the piezoelectric effect where certain materials generate an electric charge in response to applied mechanical stress. When pressure is applied, the material generates proportional voltage.

Biomedical Instrumentation

Prof. Dr. Nizamettin AYDIN [email protected] [email protected] http://www.yildiz.edu.tr/~naydin

Basic Sensors and Principles

Transducer Systems

Classification of Transducers
Transducers

Sensors Actuators

Interface Circuits

Control and Processing Circuits

On The Basis of principle Used

Active/Passive

Primary/Secondary

Analogue/Digital

Transducers/ Inverse Transducers

Capacitive Inductive Power Supply I/O Channel /USER Resistive Transducers may be classified according to their application, method of energy conversion, nature of the output signal, and so on.

SPECIAL REQUIREMENTS OF SENSOR IN BIOMEDICAL APPLICATIONS

Passive Transducers

Appliances for diagnosis: measuring or mapping a parameter at a given time Monitoring devices for measuring parameters within a given period Built-in controlling units containing not only sensors but also actuators

Active Transducers

Selecting a Transducer
What is the physical quantity to be measured? Which transducer principle can best be used to measure this quantity? What accuracy is required for this measurement?
Fundamental transducer parameters Physical conditions Environmental conditions Compatibility of the associated equipment

Transducer, Sensor, and Actuator


Transducer:
a device that converts energy from one form to another

Sensor:
converts a physical parameter to an electrical output (a type of transducer, e.g. a microphone)

Reducing the total measurement error :


Using in-place system calibration with corrections performed in the data reduction Artificially controlling the environment to minimize possible errors

Actuator:
converts an electrical signal to a physical output (opposite of a sensor, e.g. a speaker)

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Type of Sensors
Displacement Sensors:
resistance, inductance, capacitance, piezoelectric

Displacement Measurements
Used to measure directly and indirectly the size, shape, and position of the organs. Displacement measurements can be made using sensors designed to exhibit a resistive, inductive, capacitive or piezoelectric change as a function of changes in position.

Temperature Sensors:
Thermistors, thermocouples

Electromagnetic radiation Sensors:


Thermal and photon detectors

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Resistive sensors - potentiometers


Measure linear and angular position Resolution a function of the wire construction Measure velocity and acceleration

Resistive sensors strain gages


Devices designed to exhibit a change in resistance as a result of experiencing strain to measure displacement in the order of nanometer. For a simple wire:

R=

L
A

A change in R will result from a change in (resistively), or a change in L or A (dimension). The gage factor, G, is used to compare various strain-gage materials

G=

R / R / = (1 + 2 ) + L / L L / L
= D / D L / L
for most metals =0.3

2 to 500mm

From 10o to more than 50o


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Is Poissons ratio

Semiconductor has larger G but more sensitive to temperature


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Wheatstone Bridge
vo is zero when the bridge is balanced- that is when

R1 / R2 = R4 / R3

If all resistor has initial value R0 then if R1 and R3 increase by R, and R2 and R4 decreases by R, then

v0 =

R vi R0

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Unbonded strain gage:

With increasing pressure, the strain on gage pair B and C is increased, while that on gage pair A and D is decreased.

Bonded strain gage: - Metallic wire, etched foil, vacuum-deposited film or semiconductor is cemented to the strained surface

Initially before any pressure R1 = R4 and R3 = R2 Wheatstone Bridge


A

R3 Va = Vi R +R 3 2
C

R4 Vb = Vi R +R 1 4

R3 R4 Vo = Va Vb = Vi R +R R +R 2 3 1 4 R4 ( R3 R2 ) + R3 ( R1 R4 ) Vo = Vi ( R2 + R3 )( R1 + R4 )
Rugged, cheap, low mass, available in many configurations and sizes To offset temperature use dummy gage wire that is exposed to temperature but not to strain
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Error in Fig. 2.2 legend: R1 = A, R2 = B, R3 = D, R4 = C

Bonded strain gage terminology:

Carrier (substrate + cover)

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Semiconductor Integrated Strain Gages


To patient

4 cm Clear plastic Saline Gel Flush valve IV tubing

Pressure strain gages sensor with high sensitivity Silicon chip Electrical cable

Integrated cantilever-beam force sensor

Isolation in a disposable blood-pressure sensor. Disposable blood pressure sensors are made of clear plastic so air bubbles are easily seen. Saline flows from an intravenous (IV) bag through the clear IV tubing and the sensor to the patient. This flushes blood out of the tip of the indwelling catheter to prevent clotting. A lever can open or close the flush valve. The silicon chip has a silicon diaphragm with a four-resistor Wheatstone bridge diffused into it. Its electrical connections are protected from the saline by a compliant silicone elastomer gel, which also provides electrical isolation. This prevents electric shock from the sensor to the patient and prevents destructive currents during defibrillation from the patient to the silicon chip.
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Elastic-Resistance Strain Gages


Extensively used in Cardiovascular and respiratory dimensional and volume determinations. As the tube stretches, the diameter decreases and the length increases, causing the resistance to increase

Inductive Sensors

23ubat2k11

Amperes Law: flow of electric current will create a magnetic field Faradays Law: a magnetic field passing through an electric circuit will create a voltage i

b) venous-occlusion plethysmography c) arterial-pulse plethysmography

+ v -

+ v1

+ v2 -

v=N

d dt

N1

N2

v1 =

N1 v2 N2

Filled with a conductive fluid (mercury, conductive paste, electrolyte solution. Resistance = 0.02 - 2 /cm, linear within 1% for 10% of maximal extension
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Inductive Sensors
Amperes Law: flow of electric current will create a magnetic field Faradays Law: a magnetic field passing through an electric circuit will create a voltage

LVDT : Linear variable differential transformer - full-scale displacement of 0.1 to 250 mm - 0.5-2 mV for a displacement of 0.01mm - sensitivity is much higher than that for strain gages Disadvantage requires more complex signal processing
http://www.macrosensors.com/lvdt_macro_sensors/lvdt_tutorial/lvdt_primer.pdf

vo = vcd = vce vde


+
+

_
+

Self-inductance Mutual inductance Differential transformer

L = n G
2

v=L

di dt

= effective magnetic permeability of the medium


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n = number of turns of coil G = geometric form factor

(a) As x moves through the null position, the phase changes 180 , while the magnitude of vo is proportional to the magnitude of x. (b) An ordinary rectifierdemodulator cannot distinguish between (a) and (b), so a phase-sensitive demodulator is required.

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Capacitive Sensors
Sensitivity of capacitor sensor, K Capacitive sensors

For a parallel plate capacitor:

A C = 0 r x

C A = 0 r 2 x x

Sensitivity increases with increasing plate size and decreasing distance

0 = dielectric constant of free space r = relative dielectric constant of the insulator A = area of each plate x = distance between plates

Change output by changing r (substance flowing between plates), A (slide plates relative to each other), or x.

When the capacitor is stationary xo the voltage v1=E. A change in position x = x1 -xo produces a voltage vo = v1 E.

Vo ( j ) (E / xo ) j = X 1 ( j ) j + 1
Characteristics of capacitive sensors:

i=c

dvc dt

High resolution (<0.1 nm) Dynamic ranges up to 300 m (reduced accuracy at higher displacements) High long term stability (<0.1 nm / 3 hours) Bandwidth: 20 to 3 kHz
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Example 2.1
For a 1 cm2 capacitance sensor, R is 100 M. Calculate x, the plate spacing required to pass sound frequencies above 20 Hz. Answer: From the corner frequency, C =1/2fR=1/(220108)= 80 pF. x can be calculated as follows:

Piezoelectric Sensors
Measure physiological displacement and record heart sounds Certain materials generate a voltage when subjected to a mechanical strain, or undergo a change in physical dimensions under an applied voltage. Uses of Piezoelectric External (body surface) and internal (intracardiac) phonocardiography Detection of Korotkoff sounds in blood-pressure measurements Measurements of physiological accelerations Provide an estimate of energy expenditure by measuring acceleration due to human movement.

A (8.854 10 )(110 ) = C 80 10 12 5 x = 1.1110 m = 1.11 m x = 0 r


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12

30

q = kf
Vo

k = piezoelectric constant, C/N


(typically pC/N, a material property) k for Quartz = 2.3 pC/N k for barium titanate = 140 pC/N

Models of Piezoelectric Sensors

To find Vo, assume system acts like a capacitor (with infinite leak resistance):

Vo =

q kf kfx = = C C 0 r A

Capacitor:

C = 0 r

A x

For piezoelectric sensor of 1-cm2 area and 1-mm thickness with an applied force due to a 10-g weight, the output voltage v is 0.23 mV for quartz crystal 14 mV for barium titanate crystal. Piezoelectric polymeric films, such as polyvinylidence fluoride (PVDF). Used for uneven surface and for microphone and loudspeakers.
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Transfer Function of Piezoelectric Sensors


View piezoelectric crystal as a charge generator:

Transfer Function of Piezoelectric Sensors


Convert charge generator to current generator:

q = Kx K = proportionality constant x = deflection


Rs: sensor leakage resistance Cs: sensor capacitance Cc: cable capacitance Ca: amplifier input capacitance Ra: amplifier input resistance

q = Kx

is =

is = ic + iR ic = is i R

dq dx =K dt dt
Ra

dx Vo dV C o = K dt R dt
Vo ( j ) K s j = X ( j ) j + 1
Ra

Current

Ra

Ks = K/C, sensitivity, V/m = RC, time constant


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Voltage-output response of a piezoelectric sensor to a step displacement x.

Example 2.2
A piezoelectric sensor has C = 500 pF. Sensor leakage resistanse is 10 G. The amplifier input impedance is 5 M. What is the low corner frequency?

Decay due to the finite internal resistance of the PZT

q = VC = Kx V0 = Kx C

The decay and undershoot can be minimized by increasing the time constant =RC.
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Example 2.2
C = 500 pF Rleak = 10 G Ra = 5 M What is fc,low ?
Current

High Frequency Equivalent Circuit


Vo ( j ) K s j = X ( j ) j + 1

Rs

f c ,low =

1 1 = = 64 Hz 2RC 2 (5 106 )(500 10 12 )

If input impedance is increased 100 times: (Ra = 500 M ) Then the fc,low :

f c ,low =

1 = 0.64 Hz 2 (500 106 )(500 10 12 )


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Temperature Measurement
The human body temperature is a good indicator of the health and physiological performance of different parts of the human body. Temperature indicates:
Shock by measuring the big-toe temperature Infection by measuring skin temperature Arthritis by measuring temperature at the joint Body temperature during surgery Infant body temperature inside incubators Thermocouples Thermistors Radiation and fiber-optic detectors p-n junction semiconductor (2 mV/oC)
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Thermocouple
Electromotive force (emf) exists across a junction of two dissimilar metals. Two independent effects cause this phenomena:
1- Contact of two unlike metals and the junction temperature (Peltier)
T1 A B B T2 T1

E = f(T1 T2)

Temperature sensors type

2- Temperature gradients along each single conductor (Lord Kelvin) E = f ( T1 2 - T2 2 )

Advantages of Thermocouple
fast response (=1ms), small size (12 m diameter), ease of fabrication and long-term stability

Disadvantages
Small output voltage, low sensitivity, need for a reference temperature
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Thermocouple
Empirical calibration data are usually curvefitted with a power series expansion that yield the Seebeck voltage.
T1 A B B T2 T1

Thermocouple Laws
1- Homogeneous Circuit law: A circuit composed of a single homogeneous metal, one cannot maintain an electric current by the application of heat alone. See Fig. 2.12b (next slide) 2- Intermediate Metal Law: The net emf in a circuit consisting of an interconnection of a number of unlike metals, maintained at the same temperature, is zero. See Fig. 2.12c (next slide)
- Second law makes it possible for lead wire connections

E = f(T1 T2)

1 E = aT + bT 2 + .... 2

T: Temperature in Celsius Reference junction is at 0 oC

3- Successive or Intermediate Temperatures Law: See Fig. 2.12d (next slide)


The third law makes it possible for calibration curves derived for a given reference-junction temperature to be used to determine the calibration curves for another reference temperature.

1 1 E23 = E13 E12 = a1T3 + b1T3 a1T2 b1T2 2 2


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T1

T2

T3
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Thermoelectric Sensitivity
For small changes in temperature:
T1

E = T
A B E = f(T1 T2) T2

1 E = aT + bT 2 + 2

Differentiate above equation to find , the Seebeck coefficient, or thermoelectric sensitivity. Generally in the range of 6.5 - 80 V/oC at 20 oC.

=
43

dE = a + bT + dT
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Thermistors
Thermistors are semiconductors made of ceramic materials whose resistance decreases as temperature increases. Advantages Small in size (0.5 mm in diameter) Large sensitivity to temperature changes (-3 to -5% /oC) Blood velocity Temperature differences in the same organ Excellent long-term stability characteristics (R=0.2% /year) Disadvantages Nonlinear Self heating Limited range
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Circuit Connections of Thermistors


Bridge Connection to measure voltage
R1 V va R2 Rt R3 vb

Amplifier Connection to measure currents


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Thermistors Resistance
Relationship between Resistance and Temperature at zero1000 power resistance of thermistor.

Voltage-Versus-Current Characteristics
The temperature of the thermistor is that of its surroundings. However, above specific current, current flow generates heat that make the temperature of the thermistor above the ambient B temperature.
100

Rt = R0 e[ (T0 T ) / TT0 ]
Resistance ratio, R/R25 C

100

= material constant for thermistor, K (2500 to 5000 K) To = standard reference temperature, K To = 293.15 K = 20C = 68F

10

A Voltage, V
10

C
Water

Air 1.0

0.1

1 dRt = = 2 Rt dT T

0.01 0.1 0.10 1.0 10.0 100.0

(% / K )

0.001

Current, mA (b)

is a nonlinear function of temperature


50 0 50 100 150 200

Temperature, C

(a) Typical thermistor zero-power resistance ratio-temperature characteristics for various materials.

(a)

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(b) Thermistor voltage-versus-current characteristic for a thermistor in air and water. The diagonal lines with a positive slope give linear resistance values and show the degree of thermistor linearity at low currents. The intersection of the thermistor curves and the diagonal lines with the negative slope give the device power dissipation. Point A is the maximal current value for no appreciable self-heat. Point B is the peak voltage. Point C is the maximal safe continuous current in air.

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Radiation Thermometry
The higher the temperature of a body the higher is the electromagnetic radiation (EM). Electromagnetic Radiation Transducers
Convert energy in the form of EM radiation into an electrical current or potential, or modify an electrical current or potential. Medical thermometry maps the surface temperature of a body with a sensitivity of a few tenths of a Kelvin.
http://en.wikipedia.org/wiki/Blackbody_radiation

Application
Breast cancer, determining location and extent of arthritic disturbances, measure the depth of tissue destruction from frostbite and burns, detecting various peripheral circulatory disorders (venous thrombosis, carotid artery occlusions)
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Radiation Thermometry
Sources of EM radiation:
Acceleration of charges can arise from thermal energy. Charges movement cause the radiation of EM waves.

Power Emitted by a Blackbody


C1 5 e

C2
Spectral radient emittance, W-cm-2mm-1

Stefan-Boltzman law

Power emitted at a specific wavelength:

W =

100% m= 9.66 m 0.00312 0.003 80

The amount of energy in a photon is inversely related to the wavelength: 1

40 0.001 20 T = 300 K 5 10 15 20 25

1 eV = 1.602 10 19 J
Thermal sources approximate ideal blackbody radiators:
Blackbody radiator:
an object which absorbs all incident radiation, and emits the maximum possible thermal radiation (0.7 m to 1mm).
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Unit : W/cm2. m C1 = 3.74x104 (W. m4/cm2) C2 = 1.44x104 (m. K) T = blackbody temperature, K = emissivity (ideal blackbody = 1)
Wavelength for which W is maximum:

Wavelength, m

m =

2898 T

(m )

(a) Spectral radiant emittance versus wavelength for a blackbody at 300 K on the left vertical axis; percentage of total energy on the right vertical axis.

m varies inversely with T - Wiens displacement law


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Power Emitted by a Blackbody


Spectral radient emittance, W-cm-2mm-1

Stefan-Boltzman law
100% m= 9.66 m

Thermal Detector Specifications


Infrared Instrument Lens Properties; -pass wavelength > 1 m -high sensitivity to the weak radiated signal -Short response -Respond to large bandwidth
100 Fused silica Sapphire Arsenic trisulfide Thallium bromide iodine 50

W =

C1 e
5 C2

0.00312 0.003

80

60 0.002 40 % Total power 0.001 20 T = 300 K

Total radiant power:

10

Wt = W d = T
1
Unit : W/cm2. m

5 10 Wavelength, m

15

20

25

80% of the total radiant power is found in the wavelength band from 4 to 25 m

Thermal Detectors -Law sensitivity -Respond to all wavelength Photon (Quantum) Detector -higher sensitivity -Respond to a limited wavelength

0 1 Wavelength, m 10 100

Fig. a

All thermal detectors 100 Indium antimonide (InSb) 60 (photovoltaic)

= Stefan' s constant = 5.67 10

-12

(W / cm ) K

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Fig. a) Spectral transmission for a number of optical materials. (b) Spectral sensitivity of photon and thermal detectors.

Lead sulfide (PbS) 20 0 1 2 3 Wavelength, m 4 5 6 7 8

Fig. b

% Total power
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60 0.002

Radiation Thermometer System

Application of Radiation Thermometer


Measuring the core body temperature of the human by measuring the magnitude of infrared radiation emitted from the tympanic membrane and surrounding ear canal.
Response time is 0.1 second Accuracy of 0.1 oC

Stationary chopped-beam radiation thermometer


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Fiber-Optic Temperature Sensors


Small and compatible with biological implantation. Nonmetallic sensor so it is suitable for temperature measurements in a strong electromagnetic heating field.

Optical Measurements
Applications:
1- Clinical-chemistry lab (analyze sample of blood and tissue) 2- Cardiac Catheterization (measure oxygen saturation of hemoglobin and cardiac output)

Components: Sources, filters, and detectors.


General block diagram of an optical instrument. (b) Highest efficiency is obtained by using an intense lamp, lenses to gather and focus the light on the sample in the cuvette, and a sensitive detector. (c) Solidstate lamps and detectors may simplify the system.

Gallium Arsenide (GaAs) semiconductor temperature probe. The amount of power absorbed increases with temperature

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Radiation Sources
1- Tungsten Lamps - Coiled filaments to increase emissivity and efficiency. - Ribbon filaments for uniform radiation - Tungsten-halogen lamps have iodine or bromine to maintain more than 90% of their initial radiant.

Radiation Sources
2- ARC Discharges - Low-pressure lamp: Fluorescent lamp filled with Argon-Mercury (Ar-Hg) mixture. Accelerated electron hit the mercury atom and cause the radiation of 250 nm (5 eV) wavelength which is absorbed by phosphor. Phosphor will emits light of longer visible wavelengths. - Fluorescent lamp has low radiant so it is not used for optical instrument, but can be turned on in 20 sec and used for tachistoscope to provide brief stimuli to the eye. - High pressure lamp: mercury, sodium, xenon lamps are compact and can provide high radiation per unit area. Used in optical instruments.

Spectral characteristics of sources, (a) Light sources, Tungsten (W) at 3000 K has a broad spectral output. At 2000 K, output is lower at all wavelengths and peak output shifts to longer wavelengths.
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10

Radiation Sources
3- Light-Emitting Diodes (LED) A p-n junction devices that are optimized to radiant output. -GaAs has a higher band gap and radiate at 900 nm. Switching time 10 nsec. -GaP LED has a band gap of 2.26 eV and radiate at 700 nm -GaAsP absorb two photons of 940 nm wavelength and emits one photon of 540 nm wavelength. Advantages of LED: compact, rugged, economical, and nearly monochromatic.

Radiation Sources
4- Laser (Light Amplification by Stimulated Emission of Radiation) -He-Ne lasers operate at 633 nm with 100 mW power. -Argon laser operates at 515 nm with the highest continuous power level with 1-15 W power. -CO2 lasers provide 50-500 W of continuous wave output power. -Ruby laser is a solid state lasers operate in pulsed mode and provide 693 nm with 1-mJ energy. The most medical use of the laser is to mend tear in the retina. Spectral characteristics of sources, (a) Monochromatic outputs from common lasers are shown by dashed lines: Ar, 515 nm; HeNe, 633 nm; ruby, 693 nm; Nd, 1064 nm
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Spectral characteristics of sources, (a) Lightemitting diodes yield a narrow spectral output with GaAs in the infrared, GaP in the red, and GaAsP in the green.

Optical Filters
Optical filters are used to control the distribution of radiant power or wavelength. Power Filters
Glass partially silvered: most of power are reflected Carbon particles suspended in plastic: most of power are absorbed Two Polaroid filters: transmit light of particular state of polarization

Optical Filters
Spectral characteristics of filters (b) Filters. A Corning 5-65 glass filter passes a blue wavelength band. A Kodak 87 gelatin filter passes infrared and blocks visible wavelengths. Germanium lenses pass long wavelengths that cannot be passed by glass. Hemoglobin Hb and oxyhemoglobin HbO pass equally at 805 nm and have maximal difference at 660 nm.

Wavelength Filters
Color Filters: colored glass transmit certain wavelengths Gelatin Filters: a thin film of organic dye dried on a glass (Kodak 87) or combining additives with glass when it is in molten state (corning 5-56 ). Interference Filters: Depositing a reflective stack of layers on both sides of a thicker spacer layer. LPF, BPF, HPF of bandwidth from 0.5 to 200nm. Diffraction grating Filters: produce a wavelength spectrum.
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Optical method for measuring fat in the body (fat absorption 930 nm Water absorption 970 nm

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Classifications of Radiation Sensors


Thermal Sensors: absorbs radiation and change the temperature of the sensor.
Change in output could be due to change in the ambient temperature or source temperature. Sensitivity does not change with wavelength Slow response Example: Pyroelectric sensor: absorbs radiation and convert it to heat which change the electric polarization of the crystals.

Photoemissive Sensors
Phototube: have photocathode coated with alkali metals. A radiation photon with energy cause electron to jump from cathode to anode. Photon energies below 1 eV are not large enough to overcome the work functions, so wavelength over 1200nm cannot be detected.

Quantum Sensors: absorb energy from individual photons and use it to release electrons from the sensor material.
sensitive over a restricted band of wavelength Fast response Less sensitive to ambient temperature Example: Eye, Phototube, photodiode, and photographic emulsion.

Photomultiplier An incoming photon strikes the photocathode and liberates an electron. This electron is accelerated toward the first dynode, which is 100 V more positive than the cathode. The impact liberates several electrons by secondary emission. They are accelerated toward the second dynode, which is 100 V more positive than the first dynode, This electron multiplication continues until it reaches the anode, where currents of about 1 A flow through RL. Time response < 10 nsec
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Photoconductive Cells
Photoresistors: a photosensitive crystalline materials such as cadmium Sulfide (CdS) or lead sulfide (PbS) is deposited on a ceramic substance. The resistance decrease of the ceramic material with input radiation. This is true if photons have enough energy to cause electron to move from the valence band to the conduction band.
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Photojunction Sensors
Photojunction sensors are formed from p-n junctions and are usually made of silicon. If a photon has enough energy to jump the band gap, hole-electron pairs are produced that modify the junction characteristics.

Photodiode: With reverse biasing, the reverse photocurrent increases linearly with an increase in radiation. Phototransistor: radiation generate base current which result in the generation of a large current flow from collector to emitter. Response time = 10 microsecond

Voltage-current characteristics of irradiated silicon p-n junction. For 0 irradiance, both forward and reverse characteristics are normal. For 1 mW/cm2, open-circuit voltage is 500 mV and short-circuit current is 8 A.
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Photovoltaic Sensors
Photovoltaic sensors is a p-n junction where the voltage increases as the radiation increases.

Optical Combinations
Total effective irradiance, is found by breaking up the spectral curves into many narrow bands and then multiplying each together and adding the resulting increments.

Ee = S F D
Spectral characteristics of detectors, (c) Detectors. The S4 response is a typical phototube response. The eye has a relatively narrow response, with colors indicated by VBGYOR. CdS plus a filter has a response that closely matches that of the eye. Si p-n junctions are widely used. PbS is a sensitive infrared detector. InSb is useful in far infrared. Note: These are only relative responses. Peak responses of different detectors differ by 107.
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S= relative source output; F= relative filter transmission D= relative sensor responsivity Spectral characteristics of combinations thereof (d) Combination. Indicated curves from (a), (b), and (c) are multiplied at each wavelength to yield (d), which shows how well source, filter, and detector are matched.

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Measuring Core Temperature


Because skin temperature cannot directly be correlated with interior body temperature, body (core) temperature measurement is traditionally performed inside a body cavity

Electronic thermometers
They generally contain diodes as temperaturesensing elements with a special package design that can assure small thermal capacity and good thermal conductivity to the environment. They have relatively short response times and good visible display units

An old and traditional device used for body temperature measurement is the mercury thermometer that does not contain sensors. Its drawbacks are slow operation and difficult reading and registration of the result
Structure of a disposable oral thermometer.

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12

Radiation Ear Thermometer

Skin Blood-Flow Sensor


Skin blood flow (SBF) or skin perfusion is a complex phenomenon that occurs in capillaries. In perfused tissue, thermal conductivity depends not only on the thermal conductivity of the tissue materials, but also on the heat convection transferred by the blood flow in capillaries. Thus, thermal conductivity of the skin can vary within a wide range; its minimum value, 2.5 mW/cm C

This version is based on a pyroelectric sensor. Thermal radiation flux from the auditory canal is channeled by the optical waveguide toward the pyroelectric sensor. When pressing the start button, the shutter opens momentarily, exposing the sensor to thermal radiation and replacing the radiation coming from the shutter itself. An ambient temperature sensor element is behind the shutter. The radiation reaches the sensor where it is converted into electric current impulse due to the pyroelectric effect
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A Thermal Conductivity Sensor for the Measurement of Skin Blood Flow

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Sensors for Pressure Pulses and Movement


Pulse sensing is a convenient and efficient way of acquiring important physiological information concerning the cardiovascular system. Finger pulse pickups can be employed in systems that measure blood pressure, heart rate, and blood flow

SENSORS IN ULTRASOUND IMAGING


The first and simplest ultrasound imaging systems applied the A-mode (amplitude modulation) imaging illustrated in Figure

The pulse-wave signal is sent through the buffer to the signal-processing electronics. The PVDF film is in direct contact with the finger therefore, its metallized surfaces have to be shielded on both sides with thin metallized protecting polymer films and sealed with highly insulating silicone rubber to avoid damage to the surface electrodes
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ULTRASOUND IMAGING
In B-mode (brightness modulation) imaging, all echo impulses are represented by a pixel on the display, and the brightness corresponds to the amplitude of the echo. To get a two-dimensional cross-sectional image, an appropriate scanning of the desired cross section is necessary

The Doppler blood-flow measurement

Scanning methods in B-mode ultrasound imaging: (a) sequential linear array scanner, (b) mechanical sector scanner, and (c) phased array sector scanne
77

Doppler blood flow detectors operate by means of continuous sinusoidal excitation. The frequency difference calibrated for flow velocity can be displayed or transformed by a loudspeaker into an audio output.
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13

X-ray Imaging System


In optically coupled CCD X-ray imaging system, X rays are impinged into a fluorescent screen and the image produced is then transferred onto the surface of an individual CCD by optical lenses

Optical Coherence Tomography


The technique of optical coherence tomography (OCT) provides a micronscale resolution crosssectional image from the overall eyeball, not only from the retina. OCT is similar to B-scan ultrasonic imaging

Schematic diagram of optical coherence tomography instrumentation

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Project (Sensors)
Resistive Sensors Strain Gages (Bounded and Unbonded) Blood Pressure Sensors Inductive Sensor (LVDT) Capacitive Sensors Piezoelectric Sensors Temperature Sensors (Thermocouple, Thermistors) Radiation Thermometry Infrared Thermometer Sensors Fiber Optic temperature Sensors Radiation Sources (ARC, LEDs) Thermal Sensors Quantum Sensors Photoemissive Sensors Photoconductive cells Photojunction Sensors Photovoltaic Sensors

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