2SK2885 (L), 2SK2885 (S) : Silicon N Channel MOS FET High Speed Power Switching

2SK2885(L), 2SK2885(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-545 A 2nd. Edition Features

Low on-resistance R DS(on) = 10m typ. 4V gate drive devices. High speed switching
Outline
LDPAK
4 4
D 1 1 G 2 3
1. Gate 2. Drain 3. Source 4. Drain
2SK2885(L), 2SK2885(S)
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 30 20 45 180 45 75 150 55 to +150
Unit V V A A A W C C
2SK2885(L), 2SK2885(S)
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 30 20 1.0 20 Typ 10 15 30 1570 1100 410 32 300 180 200 1.0 75 Max 10 10 2.0 14 25 Unit V V A A V m m S pF pF pF ns ns ns ns V ns I F = 45A, VGS = 0 I F = 45A, VGS = 0 diF/ dt = 50A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VDS = 30 V, VGS = 0 VGS = 16V, VDS = 0 I D = 1mA, VDS = 10V I D = 20A, VGS = 10V*1 I D = 20A, VGS = 4V*1 I D = 20A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 20A RL = 0.5
Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss
Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test t d(on) tr t d(off) tf VDF t rr
See characteristics curves of 2SK2737
2SK2885(L), 2SK2885(S)
Main Characteristics
Power vs. Temperature Derating 100 Pch (W) 1000 I D (A) 300 100 30 10 3 1 10 s
10
Maximum Safe Operation Area
75
Channel Dissipation
Drain Current
DC
PW
50
25
Operation in this area is limited by R DS(on)
Op 10 m (T erat s c = io 25 n C )
50
100
150 Tc (C)
200
Case Temperature
0.3 Ta = 25C 1 shot pulse 0.1 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V)
Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5
0.3
0.2
0.1
0.1
0.05
ch c(t) = s (t) ch c ch c = 1.67 C/W, Tc = 25 C

PDM PW T
0.03
0.02 1 lse 0.0 t pu o h 1s
D=
PW T
0.01 10
100
1m
10 m 100 m Pulse Width PW (S)
10
2SK2885(L), 2SK2885(S)
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 10 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveforms
90%
2SK2885(L), 2SK2885(S)
Package Dimensions
Unit: mm
10.2 0.3
(1.4)
4.44 0.2
1.3 0.2
8.6 0.3 10.0 +0.3 0.5
11.3 0.5
10.2 0.3
(1.4)
4.44 0.2
1.3 0.2
(1.5)
(1.5)
(1.5)
0.76 0.1
11.0 0.5
8.6 0.3 10.0 +0.3 0.5
1.2 0.2 0.86 +0.2 0.1
1.27 0.2
2.59 0.2
0.1 +0.2 0.1 2.59 0.2 0.4 0.1
0.4 0.1 2.54 0.5 2.54 0.5 2.54 0.5
1.2 0.2
0.86 +0.2 0.1 2.54 0.5
L type
S type
3.0 +0.3 0.5
1.27 0.2
Hitachi Code EIAJ JEDEC
LDPAK
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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2SK2885(L), 2SK2885(S)

Silicon N Channel MOS FET High Speed Power Switching

ADE-208-545 A 2nd. Edition Features

1. Gate 2. Drain 3. Source 4. Drain

Ratings 30 20 45 180 45 75 150 55 to +150

See characteristics curves of 2SK2737

Maximum Safe Operation Area

Operation in this area is limited by R DS(on)

ch c(t) = s (t) ch c ch c = 1.67 C/W, Tc = 25 C

0.02 1 lse 0.0 t pu o h 1s

10 m 100 m Pulse Width PW (S)

8.6 0.3 10.0 +0.3 0.5

8.6 0.3 10.0 +0.3 0.5

1.2 0.2 0.86 +0.2 0.1

0.1 +0.2 0.1 2.59 0.2 0.4 0.1

0.4 0.1 2.54 0.5 2.54 0.5 2.54 0.5

0.86 +0.2 0.1 2.54 0.5

3.0 +0.3 0.5

Hitachi Code EIAJ JEDEC

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