2SK2796(L), 2SK2796(S)

Silicon N Channel MOS FET High Speed Power Switching

ADE-208-534C (Z) 4th. Edition Jun 1998 Features

Low on-resistance R DS(on) = 0.12 typ. 4V gate drive devices. High speed switching

Outline

DPAK |1

D 1 2 G 3

1 2

1. Gate 2. Drain 3. Source 4. Drain

2SK2796(L), 2SK2796(S)
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1

Ratings 60 20 5 20 5 5 2.14 20 150 55 to +150

Unit V V A A A A mJ W C C

EAR

Pch Tch

Tstg

1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50

2SK2796(L), 2SK2796(S)
Electrical Characteristics (Ta = 25C)
Item Symbol Min 60 20 1.0 2.5 Typ 0.12 0.16 4.0 180 90 30 9 25 35 55 1.0 40 Max 10 10 2.0 0.16 0.25 Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 5A, VGS = 0 I F = 5A, VGS = 0 diF/ dt =50A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VDS = 60 V, VGS = 0 VGS = 16V, VDS = 0 I D = 1mA, VDS = 10V I D = 3 A, VGS = 10V Note4 I D = 3A, VGS = 4V Note4 I D = 3A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 3A RL = 10 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Bodydrain diode forward voltage Bodydrain diode reverse recovery time Note: 4. Pulse test V(BR)GSS I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr

2SK2796(L), 2SK2796(S)
Main Characteristics

Power vs. Temperature Derating 40 100 30 10

Maximum Safe Operation Area

Pch (W)

30

I D (A)

10

PW
D C O

10
1
= 10 m s(

Channel Dissipation

Drain Current

0 m s s
ho

20

3 1 0.3

10

Operation in this area is limited by R DS(on)

50

100

150

200

Ambient Temperature Ta (C)

Ta = 25C 0.1 50 100 0.2 0.5 1 2 5 10 20 Drain to Source Voltage V DS (V)

tio ra pe n

1s

t)

c (T =

25 ) C

Typical Output Characteristics 10 V 6 V 5V 4V 3.5 V Pulse Test

Typical Transfer Characteristics 5 25C 25C

I D (A)

4
I D (A)

Tc = 75C

3V 3

Drain Current

2 2.5 V 1 VGS = 2 V 0 2 4 6 Drain to Source Voltage V 8 (V) DS 10

Drain Current

1 V DS = 10 V Pulse Test 0 2 4 6 Gate to Source Voltage V 8 (V) GS 10

2SK2796(L), 2SK2796(S)
Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 0.5 VGS = 4 V 10 V 0.3 3 1 Drain Current 30 10 I D (A) 100

Drain to Source Saturation Voltage V DS(on) (V)

Pulse Test

1.6

1.2

0.8

ID=5A

Drain to Source On State Resistance R DS(on) ( W)

10

2.0

0.2 0.1

0.4

2A 1A 6 2 4 Gate to Source Voltage 8 V GS (V)

0.05 0.1

Static Drain to Source on State Resistance R DS(on) ( W)

Forward Transfer Admittance |y fs | (S)

Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 2A 0.3 V GS = 4 V 0.2 5A 0.1 10 V 0 40 0 40 80 120 160 Case Temperature Tc (C) 1, 2 A ID=5A 1A

Forward Transfer Admittance vs. Drain Current 10 Tc = 25 C 5 2 1 0.5 75 C 25 C

0.2 0.1 0.1

V DS = 10 V Pulse Test 0.2 0.5 1 2 5 Drain Current I D (A) 10

2SK2796(L), 2SK2796(S)
BodyDrain Diode Reverse Recovery Time 500
Reverse Recovery Time trr (ns)

1000 500
Capacitance C (pF)

Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz

200 100 50 20 10 5 0.1 di / dt = 50 A / s V GS = 0, Ta = 25 C 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A)

200 100 50

Ciss

Coss

20 Crss 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V)

Dynamic Input Characteristics

V DS (V) V GS (V)

Switching Characteristics 20 100 50

Switching Time t (ns)

100

ID=5A V DD = 10 V 25 V 50 V V DS V GS

t d(off) tf tr t d(on)

80

16

Drain to Source Voltage

60

12

Gate to Source Voltage

20 10 5

40

20

V DD = 50 V 25 V 10 V 2 4 6 8 Gate Charge Qg (nc)

4 0 10

2 1 0.1 0.2

V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 0.5 1 Drain Current 2 5 I D (A) 10

2SK2796(L), 2SK2796(S)
Reverse Drain Current vs. Source to Drain Voltage 10
Reverse Drain Current I DR (A)

Repetitive Avalanche Energy E AR (mJ)

Maximun Avalanche Energy vs. Channel Temperature Derating 2.5 I AP = 5 A V DD = 25 V duty < 0.1 % Rg > 50 W

5V

2.0

10 V V GS = 0, 5 V

1.5

1.0

2 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V)

0.5 0 25

50

75

100

125

150

Channel Temperature Tch (C)

Avalanche Test Circuit EAR =

Avalanche Waveform 1 2 L I AP 2 VDSS VDSS V DD

V DS Monitor

L I AP Monitor

V (BR)DSS I AP VDD ID V DS

Rg Vin 15 V

D. U. T

50 W 0 VDD

2SK2796(L), 2SK2796(S)
Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance g s (t) Tc = 25C 1 D=1 0.5
0.2
0.1 0.05
0.02
0.0 1

0.3

0.1

q ch c(t) = g s (t) q ch c q ch c = 6.25 C/W, Tc = 25 C

uls e
PDM PW T

0.03

1s

P ot

D=

PW T

0.01 10

100

1m

10 m Pulse Width

100 m PW (S)

10

Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 W V DD = 30 V Vout 10% 10% Vout Monitor

Waveform

90%

10% 90% td(off) tf

90% td(on) tr

2SK2796(L), 2SK2796(S)
Package Dimensions
Unit: mm

1.7 0.5

6.5 0.5 5.4 0.5

2.3 0.5 0.55 0.1

5.5 0.5

7.2

1.7 0.5

1.15 0.1
3.1 0.5 16.2 0.5

6.5 0.5 5.4 0.5

2.3 0.5 0.55 0.1

1.2 Max

5.5 0.5

0.8 0.1

9.5 0.5

1.15 0.1 0.8 0.1 2.29 0.5 2.29 0.5 2.29 0.5 0.55 0.1 1.5 Max 2.29 0.5
2.5 0.5

0 ~ 0.25 0.55 0.1

L type

S type

Hitachi Code EIAJ ( L type) EIAJ ( S type) JEDEC

DPAK SC63 SC64

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