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    2SK2847

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    jsalinas78
    This document provides specifications for the TOSHIBA 2SK2847 field effect transistor. It is a silicon n-channel MOS transistor intended for use in DC-DC converters and motor drive applications. Key specifications include a typical on-resistance of 1.1 ohms, forward transfer admittance of 7.0 siemens, and enhancement mode operation with a threshold voltage between 2.0-4.0 volts. The document provides maximum ratings, electrical characteristics, and testing results for important parameters.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    2SK2847

    Uploaded by

    jsalinas78
    90 views6 pages
    This document provides specifications for the TOSHIBA 2SK2847 field effect transistor. It is a silicon n-channel MOS transistor intended for use in DC-DC converters and motor drive applications. Key specifications include a typical on-resistance of 1.1 ohms, forward transfer admittance of 7.0 siemens, and enhancement mode operation with a threshold voltage between 2.0-4.0 volts. The document provides maximum ratings, electrical characteristics, and testing results for important parameters.

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    © Attribution Non-Commercial (BY-NC)

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    This document provides specifications for the TOSHIBA 2SK2847 field effect transistor. It is a silicon n-channel MOS transistor intended for use in DC-DC converters and motor drive applications. Key specifications include a typical on-resistance of 1.1 ohms, forward transfer admittance of 7.0 siemens, and enhancement mode operation with a threshold voltage between 2.0-4.0 volts. The document provides maximum ratings, electrical characteristics, and testing results for important parameters.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    90 views6 pages

    2SK2847

    Uploaded by

    jsalinas78
    This document provides specifications for the TOSHIBA 2SK2847 field effect transistor. It is a silicon n-channel MOS transistor intended for use in DC-DC converters and motor drive applications. Key specifications include a typical on-resistance of 1.1 ohms, forward transfer admittance of 7.0 siemens, and enhancement mode operation with a threshold voltage between 2.0-4.0 volts. The document provides maximum ratings, electrical characteristics, and testing results for important parameters.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    2SK2847

    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSIII)

    2SK2847
    DCDC Converter and Motor Drive Applications
    Unit: mm Low drainsource ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 1.1 (typ.) : |Yfs| = 7.0 S (typ.)
    15.8 0.5
    ,

    03.610.2

    : IDSS = 100 A (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

    Maximum Ratings (Ta = 25C)


    Characteristics Drainsource voltage Draingate voltage (RGS = 20 k) Gatesource voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 30 8 24 85 799 8 8.5 150 55~150 Unit
    5 45 0,2
    .

    5 45 0.2
    .

    V V V A A W mJ A mJ C C
    1
    .

    Pulse (Note 1)

    GATE
    DRAIN

    Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

    SOURCE

    JEDEC JEITA TOSHIBA

    2-16F1B

    Weight: 5.8 g (typ.)

    Thermal Characteristics
    Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (chc) Rth (cha) Max 1.47 41.6 Unit C / W C / W

    Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 22.9 mH, RG = 25 , IAR = 8 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.

    2004-07-06

    2SK2847
    Electrical Characteristics (Ta = 25C)
    Characteristics Gate leakage current Gatesource breakdown voltage Drain cutoff current Drainsource breakdown voltage Gate threshold voltage Drainsource ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turnon time Switching time Fall time Turnoff time Total gate charge (gatesource plus gatedrain) Gatesource charge Gatedrain (miller) Charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 8 A Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton
    10V

    Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 15 V, ID = 4 A

    Min 30 900 2.0 3.0

    Typ. 1.1 7.0 2040 45 190 25 60 20 95 58 32 26

    Max 10 100 4.0 1.4

    Unit A V A V V S

    VDS = 25 V, VGS = 0 V, f = 1 MHz

    pF

    ID=4A
    VOUT

    n OV
    o
    .
    -

    4 70

    000

    ns

    /n

    oVdd
    =400V

    Duty

    1%, tw = 10 s

    nC

    SourceDrain Ratings and Characteristics (Ta = 25C)


    Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr IDR = 8 A, VGS = 0 V IDR = 8 A, VGS = 0 V dIDR / dt = 100 A / s Test Condition Min Typ. 1650 21 Max 8 24 1.9 Unit A A V ns C

    Marking

    TOSHIBA

    K2847

    Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

    2004-07-06

    2SK2847

    id - vos
    COMMON SOURCE
    20

    id - Vds
    0
    55
    .

    Tc = 25C PULSE TEST

    y
    /
    J
    r
    y

    15>/l0
    t

    COMMON

    SOURCE

    Tc = 25C PULSE TEST


    <

    16

    5 25
    .

    5
    OS D U 47
    .

    55-

    \/GS

    = 4.5V

    i
    Q

    o 4

    1
    8 12 16 20
    40 80 120

    VGS = 4V
    160 200

    DRAIN-SOURCE VOLTAGE

    VDs

    (V)

    DRAIN-SOURCE VOLTAGE

    VdS

    (V)

    id - vgs
    20

    vds - vqs
    z

    COMMON SOURCE

    VDS = 50V
    PULSE TEST
    16

    COMMON SOURCE Tc = 25<'C PULSE TEST


    Q
    >

    16

    00

    12

    <
    o >
    o

    12

    id = 8A

    Di

    IT c=-i

    < K 3

    10

    12

    16

    20

    GATE-SOURCE VOLTAGE

    Vqs

    (V)

    GATE-SOURCE VOLTAGE

    Vqs

    (V)

    |Yfs| - ID
    30

    Rdscon) - id
    COMMON

    COMMON SOURCE

    SOURCE
    Tr = 95n

    Vds=50V
    PULSE TEST
    10

    P ULSE

    Tc=-55C

    T EST

    vg s
    '
    -

    10

    4ioo 2 -

    15

    a 2
    05
    .

    Da 03
    .

    03
    .

    0.5

    10

    30

    01 03
    .
    .

    0.5

    10

    30

    DRAIN CURRENT

    ID

    (A)

    DRAIN CURRENT

    Id

    (A)

    2004-07-06

    2SK2847

    RDS(ON) - Te
    30

    IDR - Vos
    COMMON
    &u

    COMMON SOURCE

    VGs = 10V
    u

    PULSE TEST

    ID=

    8A
    t. a

    10

    Te = 25 c PL LSE TE T
    -

    z o z
    t.

    /
    .
    -

    /i
    3
    O

    M 9
    OS Q

    t
    05
    .

    3
    Z

    >

    >

    in

    f //
    '
    i

    i
    Q
    -

    03
    .

    1
    01
    .

    '

    / )

    /
    -0.4

    //

    //

    v( JS = ' 1

    IV

    80

    -40

    40

    80

    120

    160

    _0.2

    -0.6

    -0.8

    -1.0

    -1

    CASE TEMPERATURE

    Te

    CC)

    DRAIN-SOURCE VOLTAGE

    VDs

    (V)

    CAPACITANCE - VDS
    10000

    Vth - Te
    1
    5
    >
    a

    COMMON

    SOURCE

    VDS = 10V lD = lmA


    PULSE TEST

    o
    >

    3
    o

    COMMON SOURCE

    ns

    P
    u
    <

    Vgs=0V
    f=lMHz
    Te = 25C

    0 0 3 0.5
    .

    10

    30

    50

    100

    80

    40

    40

    80

    120

    160

    DRAIN-SOURCE VOLTAGE

    Vds

    (V)

    CASE TEMPERATURE

    Te

    (C)

    PD - Te

    DYNAMIC INPUT/OUTPUT

    CHARACTERISTICS

    P
    >

    VDD = 100V
    z

    >

    O <
    c

    I
    o >

    i
    t
    w

    >

    COMMON

    5
    o z

    g
    Z
    <

    SOURCE

    lD = 8A
    Tc = 250C

    <

    PULSE TEST

    40

    80

    120

    160

    200

    20

    40

    60

    80

    100

    CASE TEMPERATURE

    Te

    (C)

    TOTAL GATE CHARGE Qg (nC)

    2004-07-06

    2SK2847

    rth - tw

    Duty = 0.5
    I

    0 01
    .

    SINGLE FUI

    Duty = t/T

    0 005
    .

    Rth(ch-c) = l-C/W
    Im lOm lOOm
    10

    PULSE WIDTH

    (s)

    SAFE OPERATING AREA


    i i 11ii 1-r

    EAS " Tch


    1000

    ID MAX. (PULSE) . ;
    mu- In MAX. (CONTINUOUS)
    <
    '

    800

    i
    600

    i
    3
    05
    .

    DC

    :,::.\TIOtf
    Tc = 25C

    \
    200

    <

    SINGLE
    Q

    >

    03
    .

    NONREPETITIVE PULSE Tc = 25C Curves must be derated

    < o

    0 1
    .

    iinearly with ncrease in


    temperature.

    VDSS
    MAX.

    26

    50

    75

    100

    126

    150

    0 05
    .

    ti
    30 100 300 1000 3000

    CHANNEL TEMPERATURE (INITIAL) Tch CC)

    10

    DRAIN-SOURCE VOLTAGE

    VDs (V)

    BVDSS
    15V
    -

    r-i L
    O-vw-

    lAR

    15V

    VDD
    m m

    VDS

    TV
    WAVE FORM

    TEST CIRCUIT

    RG = 25 VDD = 90 V, L = 22.9 mH

    E AS =

    1 B VDSS L I2 2 B V DD VDSS

    2004-07-06

    2SK2847

    RESTRICTIONS ON PRODUCT USE


    The information contained herein is subject to change without notice.

    030619EAA

    The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.

    2004-07-06

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