Scribd Logo
Upload

Welcome to Scribd!

  • 70 views

    EE305

    Uploaded by

    api-3853441
    This document discusses the transfer characteristics of a field effect transistor (FET). It defines key terms like the drain, source and gate terminals. The transfer characteristics curve plots drain current (Id) versus gate-source voltage (Vgs) at a constant drain-source voltage. The drain current reaches a maximum value (Idss) at Vgs = 0 and reduces with increasing negative Vgs. The transconductance (gm) is defined as the change in Id with respect to change in Vgs at constant Vds. The amplification factor (μ) is the product of drain resistance (rd) and transconductance.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd

    EE305

    Uploaded by

    api-3853441
    70 views19 pages
    This document discusses the transfer characteristics of a field effect transistor (FET). It defines key terms like the drain, source and gate terminals. The transfer characteristics curve plots drain current (Id) versus gate-source voltage (Vgs) at a constant drain-source voltage. The drain current reaches a maximum value (Idss) at Vgs = 0 and reduces with increasing negative Vgs. The transconductance (gm) is defined as the change in Id with respect to change in Vgs at constant Vds. The amplification factor (μ) is the product of drain resistance (rd) and transconductance.

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PPT, PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document discusses the transfer characteristics of a field effect transistor (FET). It defines key terms like the drain, source and gate terminals. The transfer characteristics curve plots drain current (Id) versus gate-source voltage (Vgs) at a constant drain-source voltage. The drain current reaches a maximum value (Idss) at Vgs = 0 and reduces with increasing negative Vgs. The transconductance (gm) is defined as the change in Id with respect to change in Vgs at constant Vds. The amplification factor (μ) is the product of drain resistance (rd) and transconductance.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    70 views19 pages

    EE305

    Uploaded by

    api-3853441
    This document discusses the transfer characteristics of a field effect transistor (FET). It defines key terms like the drain, source and gate terminals. The transfer characteristics curve plots drain current (Id) versus gate-source voltage (Vgs) at a constant drain-source voltage. The drain current reaches a maximum value (Idss) at Vgs = 0 and reduces with increasing negative Vgs. The transconductance (gm) is defined as the change in Id with respect to change in Vgs at constant Vds. The amplification factor (μ) is the product of drain resistance (rd) and transconductance.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    You are on page 1of 19

    DEPARTMENT OF TECHNICAL

    EDUCATION,A.P.
    Name : B.RAJARAO
    Designation : Lecturer
    Branch : Electronics & communication Engg
    Institute : Govt. Polytechnic, Visakhapatnam
    Year/Semester : III Semester
    Subject : Electronics -I
    Subject Code : EE-305
    Topic : Special devices
    Duration : 50Mts.
    Sub Topic : Transfer characteristics of FET
    Teaching Aids : Diagrams

    EE-305.48
    Recap

    • Already we discussed about the drain characteristics of


    FET.

    • Functions of Drain, Source and Gate terminals of FET.

    • Working principle of FET .

    EE-305.48 2
    Objectives

    • Upon completion of this period the student will be able to


    know

    • On condition of FET.

    • The Transfer characteristics of FET.

    • The amplification factor of FET.

    EE-305.48 3
    Do you know

    • Behavior of FET channel.

    • Effect of channel width on working of FET.

    EE-305.48 4
    Junction field effect transistor

    DEVICE CIRCUIT SYMBOL

    EE-305.48 5
    Transfer characteristics of FET

    • Source :It is the terminal from


    which the majority carriers enter
    the bar.

    • Drain : It is the terminal from


    which the majority carriers leave
    the bar.

    • Gate: The two sides of a N-type


    bar contains heavily doped P-
    region called gate.

    EE-305.48 6
    Transfer characteristics of FET

    • The gate and channel


    form a P-N junction.

    • Circuit Symbols: Arrow


    indicates direction of
    current flowing.

    EE-305.48 7
    Working principle of JFET using simulation

    EE-305.48 8
    Circuit diagram for Transfer characteristics
    of N-Channel FET
    - (0-10) mA
    +
    D Id

    +
    G Vds
    - _ VDD
    Vgs S (0-30) V (0-30) V
    VGG
    + (0-10) V
    (0-10) V

    CIRCUIT DIAGRAM

    9
    Transfer characteristics of FET

    • Fig. shows the transfer


    characteristics of
    N-channel JFET.

    • The variation of drain


    current ID, with Gate to
    Source voltage VGS is
    plotted for constant value of
    VDS.

    EE-305.48 10
    Transfer characteristics of FET

    • The curve is plotted


    between gate to source Id
    voltage Vgs, and drain
    current Id as shown in fig.

    -3 -2 -1 0
    Vgs

    EE-305.48 11
    Transfer characteristics of FET

    Idss
    • Drain current decreases
    with the increase in – ve
    gate to source bias. Id

    Vp
    • Drain current Id=Idss
    ,when Vgs= 0 -3 -2 -1 0
    Vgs

    EE-305.48 12
    Transfer characteristics of FET

    Idss

    • Drain current Id =0 Id

    when Vgs= Vp

    Vp
    -3 -2 -1 0
    Vgs

    EE-305.48 13
    Transfer characteristics of FET

    • Drain resistance rd: It is defined as the ratio of change in


    drain- source voltage to change in drain current at
    constant Gate –source voltage.

    • rd = Δ Vds/ Δ Ids

    EE-305.48 14
    Transfer characteristics of FET

    • Trans conductance gm : It is defined as the ratio of


    change in drain current to corresponding change in Gate
    –source voltage at constant drain- source voltage.

    • gm = Δ Id / Δ Vgs

    EE-305.48 15
    Transfer characteristics of FET
    • Amplification factor µ:It is defined as the ratio of change
    in drain- source voltage to corresponding change in Gate
    –source voltage at constant drain current .

    µ = Δ Vds / Δ Vgs at constant Id.

    = Δ Vds / Δ Id * Δ Id/Vgs

    = rd * gm

    = rd gm
    EE-305.48 16
    Summary

    • The trans conductance is defined as the ratio of change


    in drain current to change in gate to source voltage at
    constant drain to source voltage.

    • The amplification factor of FET is product of drain


    resistance and trans conductance.

    EE-305.48 17
    Quiz

    • 1) The trans conductance is the ratio of

    (a) The change in VGS to IG at constant VDS

    (b) The change in VDS to IG at constant VGS

    (c) The change in ID to VGS at constant VDS

    (d) The change in VDS to IG at constant VGS


    EE-305.48 18
    Frequently asked questions

    1. Draw the transfer characteristics of JFET?

    3. Define drain resistance , trans conductance


    and amplification factor?

    EE-305.48 19

    You might also like