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    FET - Part 1

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    Gabs Zarella
    The document discusses field effect transistors (FETs), including their basic construction and types. It describes junction field effect transistors (JFETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), focusing on their working principles, characteristics, and static behavior under different bias conditions.

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    FET - Part 1

    Uploaded by

    Gabs Zarella
    5 views46 pages
    The document discusses field effect transistors (FETs), including their basic construction and types. It describes junction field effect transistors (JFETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), focusing on their working principles, characteristics, and static behavior under different bias conditions.

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    Original Title

    FET_-_Part_1

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    The document discusses field effect transistors (FETs), including their basic construction and types. It describes junction field effect transistors (JFETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), focusing on their working principles, characteristics, and static behavior under different bias conditions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    5 views46 pages

    FET - Part 1

    Uploaded by

    Gabs Zarella
    The document discusses field effect transistors (FETs), including their basic construction and types. It describes junction field effect transistors (JFETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), focusing on their working principles, characteristics, and static behavior under different bias conditions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 46

    Electronics Engineering

    Field Effect Transistor


    FETs

    • The acronym FET stands for Field Effect


    Transistor.
    • It is a three-terminal unipolar solid-state device in
    which current is controlled by an electric field as
    is done in vacuum tubes.
    • Two Types of FETs:
    1. JFET
    2. MOSFET
    FETs
    JFETs

    • Basic Construction
    - it can be fabricated with either an N-channel or
    P-channel though N-channel is generally
    preferred.
    - for fabricating an N-channel JFET, first a
    narrow bar of N-type semiconductor material is
    taken and then two P-type junctions are diffused
    on opposite sides of its middle part.
    - these junctions form two P-N diodes or gates
    and the area between this gates is called channel.
    JFETs
    JFETs

    - the two P-regions are internally connected and a


    single lead is brought out which is called the gate
    terminal.
    - Ohmic contacts are made at the two ends of the
    bar - one lead is called source terminal and the
    other drain terminal.
    - when potential difference is established
    between drain and source, current flows along the
    length of the bar through the channel located
    between the two P-regions.
    JFETs

    - the current consists of only majority carriers.


    • Source
    - it is the terminal through which majority
    carriers enter the bar.
    • Drain
    - it is the terminal through which majority
    carriers leave the bar. The drain-to-source voltage
    VDS drives the drain current ID.
    JFETs

    • Gate
    - these are two internally-connected heavily-
    doped impurity regions which form two PN
    junctions. The gate-source voltage VGS reverse-
    biases the gates.
    • Channel
    - it is the space between two gates through which
    majority carriers pass from source-to-drain when
    VDS is applied.
    JFETs

    • Theory of Operation
    1. Gates are always reversed-biased. Hence, gate
    current IG is practically zero.
    2. The source terminal is always connected to the
    end of the drain supply which provides the
    necessary charge carriers.
    JFETs

    • When VGS = 0 and VDS = 0


    - in this case, drain current ID = 0, because
    VDS = 0. The depletion regions around PN
    junctions are of equal thickness and symmetrical.
    JFETs

    • When VGS = 0 and VDS is increased from zero


    - the JFET is connected to the VDD supply
    - the electrons flow from S to D whereas
    conventional drain current ID flows through the
    channel from D to S.
    - the gate-to-channel bias at any point along the
    channel is = /VDS/ + /VGS/.
    - since external bias VGS = 0, gate-channel
    reverse bias is provided by VDS alone.
    JFETs

    - since the value of VDS keeps decreasing, as we


    go from D to S, the gate-channel bias also
    decreases accordingly.
    - it has a maximum value in the drain-gate region
    and minimum in the source-gate region.
    - depletion regions penetrate more deeply into
    the channel in the drain-gate region than in the
    source-gate region.
    JFETs

    - as VDS is gradually increased from zero, ID


    increases proportionally as per Ohm’s law.
    - the ohmic relationship between VDS and ID
    continues till VDS reaches a certain critical value
    called pinch-off voltage VPO when drain current
    becomes constant at its maximum value called
    IDSS.
    JFETs

    - when VDS is increased beyond VPO, ID remains


    constant at its maximum value IDSS up to a certain
    point.
    - ultimately, a certain value of VDS (called VDSO)
    is reached when JFET breaks down and ID
    increases to an excessive value.
    JFETs
    JFETs

    • When VDS = 0 and VGS is decreased from


    zero
    - in this case, as VGS is made more and more
    negative, the gate reverse bias increases which
    increases the thickness of the depletion regions.
    - the channel is said to be cut-off
    - the value of VGS which cuts off the channel
    and hence the drain current is called VGS(off).
    JFETs
    JFETs

    • When VGS is negative and VDS is increased


    - values of VP as well as breakdown voltages are
    decreased.
    JFETs

    • Static Characteristics of a JFET


    1. Drain Characteristics – it gives the relation
    between ID and VDS for different values of VGS.

    2. Transfer Characteristics – it gives relation


    between ID and VGS for different values of VDS.
    JFETs
    JFETs

    • JFET Drain Characteristic with VGS= 0


    1. Ohmic Region – this part of the characteristic
    is linear indicating that for low values of VDS,
    current varies directly with voltage.
    2. Curve AB – in this region, ID increases at
    reverse square-law up to point B which is called
    pinch-off point.
    3. Pinch-off Region – it is also known as
    saturation region.
    JFETs
    JFETs

    • JFET Characteristics with External Bias


    - pinch-off voltage is reached at a lower value of
    ID than when VGS = 0.
    - value of VDS for breakdown is decreased
    JFETs

    • Transfer Characteristic
    ID = IDSS ( 1 – VGS/VP)2
    MOSFET OR IGFET

    • Depletion-Enhancement MOSFET or
    DE MOSFET
    - it can be operated in both depletion mode and
    enhancement mode by changing the polarity of
    VGS.

    - it is known as normally-ON MOSFET


    DE MOSFET

    • Construction
    - it has source, gate and drain
    - its gate is insulated from its conducting channel
    by an ultra-thin metal-oxide insulating film.
    DE MOSFET

    • Working
    - depletion mode
    - a DE MOSFET behaves like a JFET
    DE MOSFET

    - enhancement mode
    - positive gate operation
    DE MOSFET

    • Static Characteristics of a DE MOSFET


    MOSFET or IGFET
    • Enhancement-only MOSFET
    - operates only in the enhancement mode and has
    no depletion mode.
    - it works with large positive gate voltages only.
    - there exist no channel between the drain and
    source.
    - normally-OFF MOSFET
    E-MOSFET
    E-MOSFET
    ID = k (VGS – VGS(th))2
    Transfer Characteristics
    • BJT

    • FET
    Transfer Characteristics
    • Obtaining the transfer curves from the drain
    characteristics
    Transfer Characteristics
    • Applying Shockley’s Equation
    Transfer Curve – obtained directly from the Shockley’s equation
    IDSS and VP – define the limit of the curve on both axes and leave
    only the necessity of finding a few intermediate plot points
    VGS=0 VGS = VP
    Transfer Characteristics
    • VGS for a given level of ID
    Transfer Characteristics
    • Shorthand Method
    Transfer Curve – plotted so frequently
    VGS=1/2VP

    ID = IDSS/2
    Transfer Characteristics
    Transfer Characteristics
    • Sketch the transfer curve defined by IDSS=12mA and
    VP= -6V
    Transfer Characteristics
    • Sketch the transfer characteristics for an n-channel depletion type
    MOSFET with IDSS=10mA and VP= - 4V
    Transfer Characteristics
    • E-MOSFET

    K – a constant that is a function of the construction


    of the device
    Transfer Characteristics
    Transfer Characteristics
    • Sketching the Transfer Characteristic for an n-
    channel Enhancement type MOSFET from Drain
    Characteristics
    Transfer Characteristics
    ID = 0.5 x 10 -3 (VGS-4V)2
    a. Horizontal line is drawn at ID=0mA
    Transfer Characteristics
    b. A level of VGS greater than VT is chosen
    Transfer Characteristics
    c. Additional levels of VGS are chosen

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