DC DC Boost PPT Seminar

Download as pptx, pdf, or txt
Download as pptx, pdf, or txt
You are on page 1of 16

DC−DC Boost Converter

SUBMITTED TO- SUBMITTED BY-


(1) Mr Anurag Jaiswal (HOD) NISHANT YADAV
(2) Mr Satyendra Kr Gupta (1612220044)
1
Boost converter
+ vL –
iL iD Iout
iin
L +
Vin C Vout
iC

This is a much more unforgiving circuit than the buck converter

• If the MOSFET gate driver sticks in the “on” position, then there
is a short circuit through the MOSFET – blow MOSFET!
• If the load is disconnected during operation, so that Iout = 0, then
L continues to push power to the right and very quickly charges
C up to a high value (250V) – blow diode and MOSFET!
• Before applying power, make sure that your D is at the minimu
m, and that a load is solidly connected
Boost converter
+ vL –
iL iD Iout
iin
L +
Vin C Vout
iC

• Modify your MOSFET firing circuit for Boost Converter op


eration (see the MOSFET Firing Circuit document)
• Limit your output voltage to 120V
Boost converter
+ vL –
iL iD Iout
iin
L +
Vin C Vout
iC

Using KVL and KCL in the average sense, the average val
ues are
+0V– Iout Iout
Iin
L +
Vin C Vout
0A –

Find the input/output equation by examining the voltage a


cross the inductor
Switch closed for DT seconds
+ Vin −
iL Iout
iin
L +
Vin C Vout
Iout –

diL Vin Reverse biased, thus the dio


 de is open
dt L
for DT secon
ds

Note – if the switch stays closed, the input is short circuited!


Switch open for (1 − D)T seconds

+ (Vin − Vout ) −
iL Iout
iin
L +
Vin C Vout
(iL – Iout)

di
LV 
in out Diode closed. Assume contin
V
dt L uous conduction.

for (1−D)T seconds


Since the average voltage across L is zero

V

D
V

1
Lavg
in

D
V
V
in
0
out


V
(
1D
)
out

V
D
V
in
D
V
in
in

The input/output equation becomes

Vin
Vout A realistic upper limit on boost is 5 times
1D
Examine the inductor current

di V
L in
Switch closed, v V, L
in
dt L
diV 
V
Switch open, v
LV
V
in ,  out
L
out
in
dt L
Iavg = Iin is half way between
iL V
inV
out
A/sec Imax and Imin
L
Imax
Iavg = Iin
Vin
A/sec ΔI
Imin L

DT (1 − D)T

T
Inductor current rating

2 21
I 
I
Lrms
avg
2 212
I
pp
II
in
12 12

 
Max impact of ΔI on the rms current occurs at the boundary of continu
ous/discontinuous conduction, where ΔI =2Iin
iL
2Iin
Iavg = Iin
ΔI
0

2
I 
I21

Lrms
in 
2 I
in
12 3
24
I2
in 
Use max
2

ILrms Iin
3
MOSFET and diode currents and current ratings
+ vL –
iL iD Iout
iin
L +
Vin C Vout
iC

2Iin

2Iin

0
Use max

2
Take worst case D for each 
Irms Iin
3
Capacitor current and current rating
iL iD Iout
iin
L +
Vin C Vout
iC

iC = (iD – Iout)
2Iin −Iout

0
−Iout

Max rms current occurs at the boundary of continuous/discontinuous c


onduction, where ΔI =2Iout

Use max

I I
Crms
out
Voltage ratings
Diode sees Vout
iL Iout
iin
C sees Vout
L +
Vin C Vout

iL Iout
iin
L +
Vin C Vout

MOSFET sees Vout

• Diode and MOSFET, use 2Vout


• Capacitor, use 1.5Vout
Continuous current in L
V
inV
out
A/sec
iL L
2Iin

Iavg = Iin
0
(1 − D)T

1
V

inV in
V 

1
1
D
 
in 
 
2
I
in
VV


out
in
1
D
T1
D 

1
D
T
1D
L L
boundary
boundaryL f
boun

VD V D
2  in
Iin , L  in
boundary
L f
boundary 2Iin
f

Then, considering the worst case (i.e., D → 1),

use max
V
L  in guarantees continuous conduction
2Iinf
use min
MATLAB SIMULATION CIRCUIT DIAGRAM
MATLAB SIMULATION RESULT

You might also like