Japh

ABSTRACT
The general purpose photoconductive cell is also

known as LDR light dependent resistor. It is a type of
semiconductor and its conductivity changes with
proportional change in the intensity of light. There are
two common types of materials used to manufacture the
photoconductive cells. They are Cadmium Sulphide
(CdS) and Cadmium Selenide (CdSe). Extrinsic devices
have impurities added, which have a ground state energy
closer to the conduction band - since the electrons don't
have as far to jump, lower energy photons (i.e. longer
wavelengths and lower frequencies) are sufficient to
trigger the device. Two of its earliest applications were as
part of smoke and fire detection systems and camera light
meters. The structure is covered with glass sheet to
protect it from moisture and dust and allows only light
to fall on it.
TYPES OF PHOTORESISTOR:
 INTRINSIC PHOTORESISTOR :
Intrinsic photoresistor use un-doped
Semiconductor materials including silicon or
germanium. Photons fall on the LDR excite
electrons moving them from the valence band to the
conduction band. As a result these electrons are free
to conduct electricity. The more light that falls on
the device, the more electrons are liberated and the
greater the level of conductivity, and this results in a
lower level of resistance.
 EXTRINSIC PHOTORESISTOR:
Extrinsic photoresistor are manufactured from
semiconductor of material doped with impurities.
These impurities or dopants create a new energy
band above the existing valence band. As a result,
electrons need less energy to transfer to the
conduction band because of smaller energy gap.
LDR SYMBOL:
The LDR symbol user in circuits is based around
the resistor circuit symbol, but shows the light, in the form
of arrows shining on it.
Circuit symbols used for light dependent

resistor/photoresistor
AIM:
To study the variations in current flowing iii a
circuit containing an LDR because of a variation in
a) The power of the incandescent lamp, used to
‘ilhuninate' the LDR (keeping all the lamps at
a fixed distance.
b) The distance of a incandescent lamp (of fixed
power) used to ‘illuminate' the LDR.
MATERIALS REQUIRED
 Light dependent resistor (LDR)
 Connecting wire
 Bulbs
 Bulb holder
 Meter scale
 Multi meter
 Battery
THEORY
LDR AND ITS CHARACTERISTICS
When light is incident on it, a photon is absorbed

and thereby it excites an electron from valence band
into conduction band. Due to such new electrons
coming up in conduction band area, the electrical
resistance of the device decreases. Thus the LDR or
photoconductive transducer has the resistance which is
the inverse function of radiation intensity.
= threshold avelength, in meters

e = charge on one electron,in Coulombs
Ew = work function of the metal used, in Ev
Here we must note that any radiation with wavelength
greater than the value obtained in above equation cannot
produce any change in the resistance of this device. The
band gap energy of Cadmium Sulphide is 2.42eV and
for Cadmium Selenide it is1.74eV. Due to such large
energy gaps, both the materials have extremely high
resistivity at room temperature
CHARACTERISTICS OF
PHOTOCONDUCTIVE CELLS:
Now when the device kept in darkness, its
resistance is called a dark resistance. This resistance is
typically of the order of 101^ohms. When light falls on
it, its resistance decreases up to level kilo ohms or even
hundreds of ohms, depending on the intensity of light,
falling on it.
The spectral response characteristics of two

commercial cells were compared in our laboratory.
And we found that there is almost no response to the
radiation of a wavelength which was shorter than
300nm. It was very interesting to note that the
Cadmium Sulphide cell has a peak response nearer
or within the green color of the spectrum with a range
of 520nm.
Thus it can be usednearer to the infrared

region up to 750nm. It was found that the
maximum response of Cadmium Sulphoselenide is
in the yellow- orange range at 615nm and also it can
be used in the infrared region up to about 970nm.
SENSITIVITY
The sensitivity of a photo detector is the
relationship between the light falling on the device
and the resulting output signal. In the case of a
photocell, one is dealing with the relationship
between the incident light and the corresponding
resistance of the cell.
SPECTRAL RESPONSE:
Like the human eye, the relative sensitivity of a
photoconductive cell is dependent on the wavelength
(color) of the incident light. Each photoconductor
material type has its own unique spectral response curve
or plot of relative response of the photocell versus
wavelength of light.
CIRCUIT DIAGRAM
39
0
9V
+
BC54
7
PROCEDURE
 Choose a specific position for the source and
mount it using a holder, make sure it is stable
 Select the bulb with the lowest power rating and

connect il to the holder as shown in the figure.
 Connect the LDR, battery (6V) and the multimeter

in series.
 Set the multimeter to ohm section and select

suitable range and measure the resistance with a
bulb on.
 Similarly switch to current section and move to

micro ampere in the multimeter. This gives the
value of the current.
 Repeat these steps with different power sources

at different distances and note down observations.
OBSERVATIONS.
 The experiment has been conducted by using
various sources with different power ratings.
 Voltage of the battery = 6V
1. 15 watts (Yellow)(wavelength=570nm)
Distance from Current
Resistance
Serial No source (micro
(Kilo ohm)
(cm) ampere)
1. 50 142.5 40
2. 40 69 80
3. 30 41 150
4. 20 21 300
2. 15 watts (incandescent)(mean wavelength=610nm)
Resistance
(Kilo ohm)
(cm) ampere)
1. 50 51 120
2. 40 35 170
3. 30 22 270
4. 20 11 540
3. 40 watts (incandescent)(mean wavelength=610nm)

Resistance
(Kilo ohm)
(cm) ampere)
1. 50 20 300
2. 40 13 460
3. 30 8.5 700
4. 20 4.5 1330
4. 20 watts (CFL)(white light)
Resistance
(Kilo ohm)
(cm) ampere)
1. 50 15.5 380
2. 40 10 600
3. 30 6 1000
4. 20 3 2000
APPLICATION
Lead sultide (Pbs) and indiurn antimonide (InSb)

LDRs are used for the mid infrared spectral region.
GeCu photoconductors are among the best farinfrared
detectors available, and are used for infrared astronomy
and infrared spectroscopy.
ANALOG APPLICATION
 Camera Exposure Control
 Auto Slide Focus- dual cell
 Photocopy Machines- density of toner
 Colorimetric Test Equipment
 Densitometer
 Electronics Scales- dual cell
 Automatic Gain Control- modulated light
source
 Automated Rear View Mirror
DIGITAL APPLICATION
 Automatic Headlight Summer
 Night Light Control
 Oil Burner Flame Out
 Street Light Control
 Position Sensor
CONCLUSION
 The LDR resistance decreases with increase in
intensity of light and hence there is an increase in
the flow of current.
 There is an increase in current as the distance from
the source decreases.
 The intensity decreases as the distance thorn the
source increases.
PRECAUTIONS
No stay light should fall on the LDR.
It is better to work at the dark room.
Connect LDR carefully to the voltage storage.
All the connections should be made tight.
LDR is placed normally to the light source
So that angle of incidence of light rays remain

constant and normal throughout the experiment.

Japh

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ABSTRACT

The general purpose photoconductive cell is also

Circuit symbols used for light dependent

 Light dependent resistor (LDR)

LDR AND ITS CHARACTERISTICS

When light is incident on it, a photon is absorbed

= threshold avelength, in meters

The spectral response characteristics of two

Thus it can be usednearer to the infrared

 Select the bulb with the lowest power rating and

 Connect the LDR, battery (6V) and the multimeter

 Set the multimeter to ohm section and select

 Similarly switch to current section and move to

 Repeat these steps with different power sources

 Voltage of the battery = 6V

3. 40 watts (incandescent)(mean wavelength=610nm)

Lead sultide (Pbs) and indiurn antimonide (InSb)

It is better to work at the dark room.

Connect LDR carefully to the voltage storage.

All the connections should be made tight.

LDR is placed normally to the light source

So that angle of incidence of light rays remain

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