ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
 FDMC7692S N-Channel PowerTrench® SyncFETTM
FDMC7692S
N-Channel PowerTrench® SyncFETTM
30 V, 18 A, 9.3 mΩ
Features General Description
„ Max rDS(on) = 9.3 mΩ at VGS = 10 V, ID = 12.5 A This FDMC7692S is produced using ON Semiconductor’s
advanced PowerTrench® process that has been especially
„ Max rDS(on) = 13.6 mΩ at VGS = 4.5 V, ID = 10.4 A tailored to minimize the on-state resistance. This device is well
suited for Power Management and load switching applications
„ High performance technology for extremely low rDS(on)
common in Notebook Computers and Portable Battery packs.
„ Termination is Lead-free and RoHS Compliant
Applications
„ DC - DC Buck Converters
„ Notebook DC - DC application

Top Bottom

Pin 1 D 5 4 G
G
S
S D 6 3 S
S

D 7 2 S
D
D
D D 8 1 S
D

MLP 3.3x3.3

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous TC = 25 °C 18
ID -Continuous TA = 25 °C (Note 1a) 12.5 A
-Pulsed 45
EAS Sinlge Pulse Avalanche Energy (Note 3) 21 mJ
Power Dissipation TC = 25 °C 27
PD W
Power Dissipation TA = 25 °C (Note 1a) 2.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 4.7 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDMC7692S FDMC7692S MLP 3.3X3.3 13 ’’ 12 mm 3000 units

©2010 Semiconductor Components Industries, LLC. 1 Publication Order Number:

October-2017, Rev.3 FDMC7692S/D
 FDMC7692S N-Channel PowerTrench® SyncFETTM
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
ΔBVDSS Breakdown Voltage Temperature
ID = 10 mA, referenced to 25 °C 16 mV/°C
ΔTJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 μA
IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA

On Characteristics (Note 2)
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 2.0 3.0 V
ΔVGS(th) Gate to Source Threshold Voltage
ID = 10 mA, referenced to 25 °C -5 mV/°C
ΔTJ Temperature Coefficient
VGS = 10 V, ID = 12.5 A 7.8 9.3
VGS = 4.5 V, ID = 10.4 A 10.8 13.6
rDS(on) Static Drain to Source On Resistance mΩ
VGS = 10 V, ID = 12.5 A
9.6 13.0
TJ = 125 °C
gFS Forward Transconductance VDS = 5 V, ID = 12.5 A 62 S

Dynamic Characteristics
Ciss Input Capacitance 1040 1385 pF
VDS = 15 V, VGS = 0 V,
Coss Output Capacitance 445 590 pF
f = 1 MHz
Crss Reverse Transfer Capacitance 40 60 pF
Rg Gate Resistance 1.1 2.9 Ω

Switching Characteristics
td(on) Turn-On Delay Time 9 17 ns
tr Rise Time VDD = 15 V, ID = 12.5 A, 3 10 ns
td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 19 34 ns
tf Fall Time 3 10 ns
Qg Total Gate Charge VGS = 0 V to 10 V 16 23 nC
Qg Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V 8 10 nC
Qgs Gate to Source Gate Charge ID = 12.5 A 4 nC
Qgd Gate to Drain “Miller” Charge 2 nC

Drain-Source Diode Characteristics

VGS = 0 V, IS = 12.5 A (Note 2) 0.9 1.3
VSD Source to Drain Diode Forward Voltage V
VGS = 0 V, IS = 0.9 A (Note 2) 0.5 0.7
trr Reverse Recovery Time 21 33 ns
IF = 12.5 A, di/dt = 300 A/μs
Qrr Reverse Recovery Charge 16 29 nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.

a. 53 °C/W when mounted on a b. 125 °C/W when mounted on a

1 in2 pad of 2 oz copper. minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 21 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 12.0 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 3.2 A .

www.onsemi.com
2
 FDMC7692S N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted

45 3.5

DRAIN TO SOURCE ON-RESISTANCE

VGS = 10 V PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
36 3.0
VGS = 6 V
ID, DRAIN CURRENT (A)

VGS = 3.5 V
VGS = 4.5 V 2.5

NORMALIZED
27
VGS = 4 V VGS = 4 V
2.0
18 VGS = 4.5 V
VGS = 3.5 V 1.5
VGS = 6 V
9
PULSE DURATION = 80 μs
1.0
VGS = 10 V
DUTY CYCLE = 0.5% MAX
0 0.5
0 0.2 0.4 0.6 0.8 1.0 0 9 18 27 36 45
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6 40
DRAIN TO SOURCE ON-RESISTANCE

ID = 12.5 A PULSE DURATION = 80 μs

ID = 12.5 A

SOURCE ON-RESISTANCE (mΩ)

VGS = 10 V DUTY CYCLE = 0.5% MAX
1.4
rDS(on), DRAIN TO 30
NORMALIZED

1.2
20
1.0
TJ = 125 oC
10
0.8
TJ = 25 oC

0.6 0
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

45 100
PULSE DURATION = 80 μs VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)

DUTY CYCLE = 0.5% MAX

36 10
ID, DRAIN CURRENT (A)

VDS = 5 V
TJ = 125 oC
27 1
TJ = 125 oC
TJ = 25 oC
18 0.1
TJ = 25 oC
TJ = -55 oC
9 0.01
TJ = -55 oC

0 0.001
1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

www.onsemi.com
3
 FDMC7692S N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted

10 3000
VGS, GATE TO SOURCE VOLTAGE (V)

IDSS = 12.5 A
VDD = 10 V
8 1000
Ciss

CAPACITANCE (pF)
VDD = 15 V
6 Coss
VDD = 20 V
4 100

2 Crss
f = 1 MHz
VGS = 0 V
0 10
0 3 6 9 12 15 18 0.1 1 10 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

20 100
IAS, AVALANCHE CURRENT (A)

10 TJ = 25 oC ID, DRAIN CURRENT (A) 10 100 us

1ms
TJ = 100 oC
1 THIS AREA IS 10 ms
LIMITED BY rDS(on) 100 ms

SINGLE PULSE 1s
TJ = 125 oC 0.1 TJ = MAX RATED
RθJA = 125 C/Wo 10 s
o DC
TA = 25 C
1 0.01
0.001 0.01 0.1 1 10 50 0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms) VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 9. Unclamped Inductive Figure 10. Forward Bias Safe

Switching Capability Operating Area

1000
SINGLE PULSE
VGS = 10V o
P(PK), PEAK TRANSIENT POWER (W)

RθJA = 125 C/W

o
TA = 25 C
100

10

1
0.5
-4 -3 -2 -1 0 1
10 10 10 10 10 10 100 1000
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation

www.onsemi.com
4
 FDMC7692S N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted

2
r(t), NORMALIZED EFFECTIVE TRANSIENT

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5
THERMAL RESISTANCE

0.2
0.1 0.1 PDM
0.05
0.02
0.01 t1
0.01
t2
SINGLE PULSE NOTES:
ZθJA(t) = r(t) x RθJA
0.001 RθJA = 125 °C/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
0.0001
-4 -3 -2 -1
10 10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)

Figure 12. Junction-to-Ambient Transient Thermal Response Curve

www,onsemi.com
5
 FDMC7692S N-Channel PowerTrench® SyncFETTM
Typical Characteristics (continued)

SyncFET Schottky body diode

Characteristics

ON Semiconductor’s SyncFET process embeds a Schottky Schottky barrier diodes exhibit significant leakage at high tem-
diode in parallel with PowerTrench MOSFET. This diode perature and high reverse voltage. This will increase the power
exhibits similar characteristics to a discrete external in the device.
Schottky diode in parallel with a MOSFET. Figure 13
shows the reverse recovery characteristic of the
FDMC7692S.

15 10
4

IDSS, REVERSE LEAKAGE CURRENT (uA)

TJ = 125 oC
3
10 10
didt = 300 A/μs
CURRENT (A)

10
2 TJ = 100 oC
5
1
10

0
10
0 TJ = 25 oC

-5 -1
10
0 50 100 150 200 250 0 5 10 15 20 25 30
TIME (ns) VDS, REVERSE VOLTAGE (V)

Figure 13. SyncFET body diode reverse Figure 14. SyncFET body diode reverse
recovery characteristic leakage versus drain-source voltage

www.onsemi.com
6
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: [email protected] Phone: 81−3−5817−1050 Sales Representative

❖ © Semiconductor Components Industries, LLC www.onsemi.com