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 FDD6635 35V N-Channel PowerTrench® MOSFET
March 2015

FDD6635
35V N-Channel PowerTrench® MOSFET

General Description Features

This N-Channel MOSFET has been produced using • 59 A, 35 V R DS(ON) = 10 mΩ @ VGS = 10 V
Fairchild Semiconductor’s proprietary PowerTrench RDS(ON) = 13 mΩ @ VGS = 4.5 V
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the • Fast Switching
applications.
• RoHS compliant
Applications
• Inverter
• Power Supplies

D
G
G
S
D-PAK
TO-252
(TO-252) S

Absolute Maximum Ratings o

TA=25 C unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage 35 V
VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) (Note 4) 40 V
VGSS Gate-Source Voltage ±20 V
ID Continuous Drain Current @TC=25°C (Note 3) 59 A
@TA=25°C (Note 1a) 15
Pulsed (Note 1a) 100
EAS Single Pulse Avalanche Energy (Note 5) 113 mJ
PD Power Dissipation @TC=25°C (Note 3) 55 W
@TA=25°C (Note 1a) 3.8
@TA=25°C (Note 1b) 1.6
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.7 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape width Quantity
FDD6635 FDD6635 D-PAK (TO-252) 13’’ 16mm 2500 units

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

FDD6635 Rev. 1.2
 FDD6635 35V N-Channel PowerTrench® MOSFET
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics(Note 2)
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 μA 35 V
ΔBVDSS Breakdown Voltage Temperature ID = 250 μA, Referenced to 25°C
32 mV/°C
ΔTJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V 1 μA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 1 1.9 3 V
ΔVGS(th) Gate Threshold Voltage ID = 250 μA, Referenced to 25°C
–5 mV/°C
ΔTJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = 10 V, ID = 15 A 8.2 10 mΩ
On–Resistance VGS = 4.5 V, ID = 13 A 10.2 13
VGS = 10 V, ID = 15 A, TJ=125°C 12.4 16
gFS Forward Transconductance VDS = 5 V, ID = 15 A 53 S

Dynamic Characteristics
Ciss Input Capacitance 1400 pF
VDS = 20 V, V GS = 0 V,
Coss Output Capacitance 317 pF
f = 1.0 MHz
Crss Reverse Transfer Capacitance 137 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4 Ω

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time 11 20 ns
tr Turn–On Rise Time VDD = 20 V, ID = 1 A, 6 12 ns
td(off) Turn–Off Delay Time VGS = 10 V, RGEN = 6 Ω 28 45 ns
tf Turn–Off Fall Time 14 25 ns
Qg (TOT) Total Gate Charge, VGS = 10V 26 36 nC
Qg Total Gate Charge, VGS = 5V VDS = 20 V, ID = 15 A 13 18 nC
Qgs Gate–Source Charge 3.9 nC
Qgd Gate–Drain Charge 5.3 nC

FDD6635 Rev. 1.2 www.fairchildsemi.com

 FDD6635 35V N-Channel PowerTrench® MOSFET
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain–Source Diode Characteristics

VSD Drain–Source Diode Forward VGS = 0 V, IS = 15 A (Note 2) 0.8 1.2 V
Voltage
trr Diode Reverse Recovery Time IF = 15 A, diF/dt = 100 A/µs 26 ns
Qrr Diode Reverse Recovery Charge 16 nC

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) RθJA = 40°C/W when mounted on a b) RθJA = 96°C/W when mounted

1in2 pad of 2 oz copper on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%

PD
3. Maximum current is calculated as: R DS(ON)

where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A

4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.

5. Starting TJ = 25°C, L = 1mH, IAS = 15A, VDD = 35V, VGS = 10V

FDD6635 Rev. 1.2 www.fairchildsemi.com

 FDD6635 35V N-Channel PowerTrench® MOSFET
Typical Characteristics

80 2.4
VGS=10V 4.0V

DRAIN-SOURCE ON-RESISTANCE
70 2.2
6.0V 4.5V
ID, DRAIN CURRENT (A)

60 2

RDS(ON), NORMALIZED
VGS = 3.5V
50 3.5V 1.8

40 1.6
4.0V
30 1.4
4.5V
20 1.2 5.0V
3.0V 6.0V
10V
10 1

0 0.8
0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50 60 70 80
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage

1.8 0.029
ID = 7.5A
DRAIN-SOURCE ON-RESISTANCE

ID = 15A
RDS(ON), ON-RESISTANCE (OHM)

1.6 VGS = 10V 0.025

RDS(ON), NORMALIZED

1.4 0.021
TA = 125oC
1.2 0.017

1 0.013
TA = 25oC
0.8 0.009

0.6 0.005
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature Gate-to-Source Voltage

80 100
VDS = 5V VGS = 0V
25oC
IS, REVERSE DRAIN CURRENT (A)

70
10
TA =-55oC
TA = 125oC
ID, DRAIN CURRENT (A)

60
125oC 1
50
25oC
40 0.1

-55oC
30 0.01

20
0.001
10

0 0.0001
1.5 2 2.5 3 3.5 4 4.5 0 0.2 0.4 0.6 0.8 1 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

FDD6635 Rev. 1.2 www.fairchildsemi.com

 FDD6635 35V N-Channel PowerTrench® MOSFET
Typical Characteristics

10 2000
f = 1MHz
ID = 15A VDS = 10V
VGS, GATE-SOURCE VOLTAGE (V)

15V VGS = 0 V
8 1600
CISS

CAPACITANCE (pF)
20V

6 1200

4 800

COSS
2 400
CRSS

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

1000 100
P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE
RDS(ON) LIMIT 100µs RθJA = 96°C/W
100 80
ID, DRAIN CURRENT (A)

TA = 25°C
1ms
10ms
10 100ms 60
1s
10s
DC
1 40
VGS = 10V
SINGLE PULSE
0.1 RθJA = 96oC/W 20
TA = 25oC

0.01 0
0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation

100 1000
I(pk), PEAK TRANSIENT CURRENT (A)

SINGLE PULSE
I(AS), AVALANCHE CURRENT (A)

RθJA = 96癈 /W
80 TA = 25癈
o
TJ = 25 C
100
60

40
10

20

0 1
0.1 1 10 100 1000 0.001 0.01 0.1 1 10
t1, TIME (sec) tAV, TIME IN AVANCHE(ms)

Figure 11. Single Pulse Maximum Peak Figure 12. Unclamped Inductive Switching
Current Capability

FDD6635 Rev. 1.2 www.fairchildsemi.com

 FDD6635 35V N-Channel PowerTrench® MOSFET
Typical Characteristics

1
r(t), NORMALIZED EFFECTIVE TRANSIENT

D = 0.5

RθJA(t) = r(t) * RθJA

0.2
THERMAL RESISTANCE

RθJA = 96 °C/W
0.1 0.1

0.05
P(pk)
0.02
t1
0.0
0.01 t2

TJ - TA = P * RθJA(t)
SINGLE PULSE Duty Cycle, D = t1 / t2

0.001
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 13. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDD6635 Rev. 1.2 www.fairchildsemi.com

 FDD6635 35V N-Channel PowerTrench® MOSFET
Test Circuits and Waveforms

L
VDS BVDSS
tP
VGS VDS
RGEN DUT + IAS
VDD
VDD
0V -
VGS tp IAS
vary tP to obtain
required peak IAS 0.01Ω

tAV

Figure 14. Unclamped Inductive Load Test Figure 15. Unclamped Inductive Waveforms
Circuit

Drain Current Regulator

Same type as DUT

+ QG
50kΩ 10V
10V
- 10μF 1μF +
VDD VGS QGS QGD
-
VGS
DUT

Ig(REF) Charge, (nC)

Figure 16. Gate Charge Test Circuit Figure 17. Gate Charge Waveform

RL tON
VDS tOFF
td(ON) td(OFF)
VGS + VDS tr tf
90% 90%
RGEN DUT VDD
-
10% 10%
VGS 0V
Pulse Width ≤ 1μs
Duty Cycle ≤ 0.1% 90%
VGS
50% 50%

10%
Pulse Width
0V

Figure 18. Switching Time Test Circuit Figure 19. Switching Time Waveforms

FDD6635 Rev. 1.2 www.fairchildsemi.com

 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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