FDMC7692S N-Channel Power Trench® SyncFETTM

September 2010

FDMC7692S
N-Channel Power Trench® SyncFETTM
30 V, 12.5 A, 9.3 m:
Features General Description
„ Max rDS(on) = 9.3 m: at VGS = 10 V, ID = 12.5 A This FDMC7692S is produced using Fairchild Semiconductor’s
advanced Power Trench® process that has been especially
„ Max rDS(on) = 13.6 m: at VGS = 4.5 V, ID = 10.4 A tailored to minimize the on-state resistance. This device is well
„ High performance technology for extremely low rDS(on) suited for Power Management and load switching applications
common in Notebook Computers and Portable Battery packs.
„ Termination is Lead-free and RoHS Compliant
Applications
„ DC - DC Buck Converters
„ Notebook DC - DC application

Top Bottom

Pin 1 D 5 4 G
G
S
S D 6 3 S
S

D 7 2 S
D
D
D D 8 1 S
D

MLP 3.3x3.3

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 18
ID -Continuous TA = 25 °C (Note 1a) 12.5 A
-Pulsed 45
EAS Sinlge Pulse Avalanche Energy (Note 3) 21 mJ
Power Dissipation TC = 25 °C 27
PD W
Power Dissipation TA = 25 °C (Note 1a) 2.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RTJC Thermal Resistance, Junction to Case 4.7 °C/W
RTJA Thermal Resistance, Junction to Ambient (Note 1a) 53 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDMC7692S FDMC7692S MLP 3.3X3.3 13 ’’ 12 mm 3000 units

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDMC7692S Rev.C3
 FDMC7692S N-Channel Power Trench® SyncFETTM
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
'BVDSS Breakdown Voltage Temperature
ID = 10 mA, referenced to 25 °C 16 mV/°C
'TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 PA
IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA

On Characteristics (Note 2)
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 2.0 3.0 V
'VGS(th) Gate to Source Threshold Voltage
ID = 10 mA, referenced to 25 °C -5 mV/°C
'TJ Temperature Coefficient
VGS = 10 V, ID = 12.5 A 7.8 9.3
VGS = 4.5 V, ID = 10.4 A 10.8 13.6
rDS(on) Static Drain to Source On Resistance m:
VGS = 10 V, ID = 12.5 A
9.6 13.0
TJ = 125 °C
gFS Forward Transconductance VDS = 5 V, ID = 12.5 A 62 S

Dynamic Characteristics
Ciss Input Capacitance 1040 1385 pF
VDS = 15 V, VGS = 0 V,
Coss Output Capacitance 445 590 pF
f = 1 MHz
Crss Reverse Transfer Capacitance 40 60 pF
Rg Gate Resistance 1.1 2.9 :

Switching Characteristics
td(on) Turn-On Delay Time 9 17 ns
tr Rise Time VDD = 15 V, ID = 12.5 A, 3 10 ns
td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 : 19 34 ns
tf Fall Time 3 10 ns
Qg Total Gate Charge VGS = 0 V to 10 V 16 23 nC
Qg Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V 8 10 nC
Qgs Gate to Source Gate Charge ID = 12.5 A 4 nC
Qgd Gate to Drain “Miller” Charge 2 nC

Drain-Source Diode Characteristics

VGS = 0 V, IS = 12.5 A (Note 2) 0.9 1.3
VSD Source to Drain Diode Forward Voltage V
VGS = 0 V, IS = 0.9 A (Note 2) 0.5 0.7
trr Reverse Recovery Time 21 33 ns
IF = 12.5 A, di/dt = 300 A/Ps
Qrr Reverse Recovery Charge 16 29 nC
Notes:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.

a. 53 °C/W when mounted on a b. 125 °C/W when mounted on a

1 in2 pad of 2 oz copper. minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. EAS of 21 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 12.0 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 3.2 A .

©2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDMC7692S Rev.C3
 FDMC7692S N-Channel Power Trench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted

45 3.5

DRAIN TO SOURCE ON-RESISTANCE

VGS = 10 V PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
36 3.0
VGS = 6 V
ID, DRAIN CURRENT (A)

VGS = 3.5 V
VGS = 4.5 V 2.5

NORMALIZED
27
VGS = 4 V VGS = 4 V
2.0
18 VGS = 4.5 V
VGS = 3.5 V 1.5
VGS = 6 V
9
PULSE DURATION = 80 Ps
1.0
VGS = 10 V
DUTY CYCLE = 0.5% MAX
0 0.5
0 0.2 0.4 0.6 0.8 1.0 0 9 18 27 36 45
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6 40
DRAIN TO SOURCE ON-RESISTANCE

ID = 12.5 A PULSE DURATION = 80 Ps

ID = 12.5 A

SOURCE ON-RESISTANCE (m:)

VGS = 10 V DUTY CYCLE = 0.5% MAX
1.4
rDS(on), DRAIN TO 30
NORMALIZED

1.2
20
1.0
TJ = 125 oC
10
0.8
TJ = 25 oC

0.6 0
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

45 100
PULSE DURATION = 80 Ps VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)

DUTY CYCLE = 0.5% MAX

36 10
ID, DRAIN CURRENT (A)

VDS = 5 V
TJ = 125 oC
27 1
TJ = 125 oC
TJ = 25 oC
18 0.1
TJ = 25 oC
TJ = -55 oC
9 0.01
TJ = -55 oC

0 0.001
1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

©2010 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDMC7692S Rev.C3
 FDMC7692S N-Channel Power Trench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted

10 3000
VGS, GATE TO SOURCE VOLTAGE (V)

IDSS = 12.5 A
VDD = 10 V
8 1000
Ciss

CAPACITANCE (pF)
VDD = 15 V
6 Coss
VDD = 20 V
4 100

2 Crss
f = 1 MHz
VGS = 0 V
0 10
0 3 6 9 12 15 18 0.1 1 10 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

20 100
IAS, AVALANCHE CURRENT (A)

10 TJ = 25 oC ID, DRAIN CURRENT (A) 10 100 us

1ms
TJ = 100 oC
1 THIS AREA IS 10 ms
LIMITED BY rDS(on) 100 ms

SINGLE PULSE 1s
TJ = 125 oC 0.1 TJ = MAX RATED
RTJA = 125 C/Wo 10 s
o DC
TA = 25 C
1 0.01
0.001 0.01 0.1 1 10 50 0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms) VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 9. Unclamped Inductive Figure 10. Forward Bias Safe

Switching Capability Operating Area

1000
SINGLE PULSE
VGS = 10V o
P(PK), PEAK TRANSIENT POWER (W)

RTJA = 125 C/W

o
TA = 25 C
100

10

1
0.5
-4 -3 -2 -1 0 1
10 10 10 10 10 10 100 1000
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation

©2010 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDMC7692S Rev.C3
 FDMC7692S N-Channel Power Trench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted

2
DUTY CYCLE-DESCENDING ORDER
1

D = 0.5
NORMALIZED THERMAL

0.2
0.1
IMPEDANCE, ZTJA

0.1
0.05
0.02 PDM
0.01
0.01
t1
SINGLE PULSE t2
o
1E-3 RTJA = 125 C/W NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA

1E-4
-4 -3 -2 -1 0 1
10 10 10 10 10 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)

Figure 12. Junction-to-Ambient Transient Thermal Response Curve

©2010 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDMC7692S Rev.C3
 FDMC7692S N-Channel Power Trench® SyncFETTM
Typical Characteristics (continued)

SyncFET Schottky body diode

Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in parallel Schottky barrier diodes exhibit significant leakage at high tem-
with PowerTrench MOSFET. This diode exhibits similar perature and high reverse voltage. This will increase the power
characteristics to a discrete external Schottky diode in parallel in the device.
with a MOSFET. Figure 13 shows the reverses recovery
characteristic of the FDMC7692S.

15 10
4

IDSS, REVERSE LEAKAGE CURRENT (uA)

TJ = 125 oC
3
10 10
didt = 300 A/Ps
CURRENT (A)

10
2 TJ = 100 oC
5
1
10

0
10
0 TJ = 25 oC

-5 -1
10
0 50 100 150 200 250 0 5 10 15 20 25 30
TIME (ns) VDS, REVERSE VOLTAGE (V)

Figure 13. SyncFET body diode reverse Figure 14. SyncFET body diode reverses
recovery characteristic leakage versus drain-source voltage

©2010 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FDMC7692S Rev.C3
 FDMC7692S N-Channel Power Trench® SyncFETTM
Dimensional Outline and Pad Layout

©2010 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FDMC7692S Rev.C3
 FDMC7692S N-Channel Power Trench® SyncFETTM
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
®
AccuPower™ F-PFS™ Power-SPM™ *
Auto-SPM™ FRFET® PowerTrench®
SM
PowerXS™ The Power Franchise®
Build it Now™ Global Power Resource
CorePLUS™ Green FPS™ Programmable Active Droop™
CorePOWER™ Green FPS™ e-Series™ QFET®
CROSSVOLT™ Gmax™ QS™ TinyBoost™
CTL™ GTO™ Quiet Series™ TinyBuck™
Current Transfer Logic™ IntelliMAX™ RapidConfigure™ TinyCalc™
DEUXPEED® ISOPLANAR™ ™ TinyLogic®
Dual Cool™ MegaBuck™ TINYOPTO™
Saving our world, 1mW/W/kW at a time™
EcoSPARK® MICROCOUPLER™ TinyPower™
SignalWise™
EfficientMax™ MicroFET™ TinyPWM™
SmartMax™
ESBC™ MicroPak™ TinyWire™
® SMART START™
MicroPak2™ SPM® TriFault Detect™
MillerDrive™ STEALTH™ TRUECURRENT™*
Fairchild® μSerDes™
MotionMax™
Fairchild Semiconductor® SuperFET™
Motion-SPM™ SuperSOT™-3
FACT Quiet Series™
OptoHiT™
FACT® SuperSOT™-6
OPTOLOGIC® UHC®
FAST® SuperSOT™-8
OPTOPLANAR® Ultra FRFET™
FastvCore™ ® SupreMOS™
FETBench™ SyncFET™ UniFET™
Sync-Lock™ VCX™
FlashWriter®*
PDP SPM™ VisualMax™
FPS™
XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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As used herein:
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change in
Advance Information Formative / In Design
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
No Identification Needed Full Production
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Obsolete Not In Production
The datasheet is for reference information only.
Rev. I48

©2010 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FDMC7692S Rev.C3