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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
 FDP7030BL/FDB7030BL
October 2003

FDP7030BL/FDB7030BL
N-Channel Logic Level PowerTrench MOSFET

General Description Features

This N-Channel Logic Level MOSFET has been • 60 A, 30 V RDS(ON) = 9 mΩ @ VGS = 10 V
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or RDS(ON) = 12 mΩ @ VGS = 4.5 V
conventional switching PWM controllers.
• Critical DC electrical parameters specified at
These MOSFETs feature faster switching and lower elevated temperature
gate charge than other MOSFETs with comparable
RDS(ON) specifications. • High performance trench technology for extremely
The result is a MOSFET that is easy and safer to drive low RDS(ON)
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency. • 175°C maximum junction temperature rating

It has been optimized for low gate charge, low RDS(ON)

and fast switching speed.

D D

G G
G S TO-263AB
D TO-220
S FDP Series FDB Series
S

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ± 20 V
ID Drain Current – Continuous (Note 1) 60 A
– Pulsed (Note 1) 180
PD Total Power Dissipation @ TC = 25°C 60 W
Derate above 25°C 0.4 W/°C
TJ, TSTG Operating and Storage Junction Temperature Range –65 to +175 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case 2.5 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDB7030BL FDB7030BL 13’’ 24mm 800 units
FDP7030BL FDP7030BL Tube n/a 45

2003 Fairchild Semiconductor Corporation FDP7030BL/FDB7030BL Rev D1(W)

 FDP7030BL/FDB7030BL
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 1)

WDSS Single Pulse Drain-Source VDD = 15 V, ID = 60 A 73 mJ
Avalanche Energy
IAR Maximum Drain-Source Avalanche 60 A
Current
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C mV/°C
22
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
IGSS Gate–Body Leakage VGS = ± 20 V, VDS = 0 V ± 100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.9 3 V
∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C mV/°C
–5
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source On– VGS = 10 V, ID = 30 A 6.8 9
Resistance VGS = 4.5 V, ID = 25 A 8.5 12 mΩ
VGS= 10 V, ID = 30 A, TJ=125°C 10.1 18
ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V 30 A
gFS Forward Transconductance VDS = 10V, ID = 30 A 85 S

Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, V GS = 0 V, 1760 pF
Coss Output Capacitance f = 1.0 MHz 440 pF
Crss Reverse Transfer Capacitance 185 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.2 Ω

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time VDD = 15V, ID = 1 A, 12 22 ns
tr Turn–On Rise Time VGS = 10 V, RGEN = 6 Ω 12 22 ns
td(off) Turn–Off Delay Time 30 48 ns
tf Turn–Off Fall Time 19 33 ns
Qg Total Gate Charge VDS = 15 V, ID = 30 A, 17 24 nC
VGS = 5 V
Qgs Gate–Source Charge 5.4 nC
Qgd Gate–Drain Charge 6.4 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 60 A
Drain–Source Diode Forward
VSD VGS = 0 V, IS = 30 A (Note 1) 0.92 1.3 V
Voltage
trr Diode Reverse Recovery Time IF = 30 A, 30 nS
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs 20 nC

Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDP7030BL/FDB7030BL Rev D1(W)

 FDP7030BL/FDB7030BL
Typical Characteristics

180 1.8
VGS=10V
6.0V

DRAIN-SOURCE ON-RESISTANCE
VGS = 3.5V
150 4.5V 1.6 3.5V
ID, DRAIN CURRENT (A)

RDS(ON), NORMALIZED
120
4.0V 1.4
4.0V
90
4.5V
1.2 5.0V
60 3.5V 6.0V
10V
1
30
3.0V

0 0.8
0 1 2 3 4 5 0 20 40 60 80 100
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 0.030
ID = 30A
ID = 30A
DRAIN-SOURCE ON-RESISTANCE

VGS =10V
RDS(ON), ON-RESISTANCE (OHM)

1.4 0.025
RDS(ON), NORMALIZED

1.2 0.020

TA = 125oC
1 0.015

0.8 0.010
o
TA = 25 C

0.6 0.005
-50 -25 0 25 50 75 100 125 150 175 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

90 1000
VDS = 5V VGS = 0V
IS, REVERSE DRAIN CURRENT (A)

75 100
ID, DRAIN CURRENT (A)

60 10 TA = 125oC

45 1
o
TA = 125 C 25oC
o
-55 C
30 0.1
-55oC
o
25 C
15 0.01

0 0.001
1.5 2 2.5 3 3.5 4 4.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDP7030BL/FDB7030BL Rev D1(W)

 FDP7030BL/FDB7030BL
Typical Characteristics

10 2500
f = 1MHz
ID = 30A VDS = 10V
20V VGS = 0 V
VGS, GATE-SOURCE VOLTAGE (V)

8 2000
Ciss

CAPACITANCE (pF)
15V
6 1500

4 1000

Coss

2 500

Crss
0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

1000 5000
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJC = 2.5°C/W
4000
TA = 25°C
ID, DRAIN CURRENT (A)

10µs
RDS(ON) LIMIT
100 100µs
3000
1mS
10mS

100m 2000
10 DC
VGS = 10V
SINGLE PULSE
1000
RθJC = 2.5oC/W
o
TA = 25 C
1 0
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE

D = 0.5 RθJC(t) = r(t) * RθJC

RθJC = 2.5 °C/W
0.2

0.1 P(pk
0.1
0.05 t1
t2
0.02 TJ - TA = P * RθJC(t)
0.01
Duty Cycle, D = t1 / t2

SINGLE PULSE

0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

FDP7030BL/FDB7030BL Rev D1(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT Quiet Series™ LittleFET™ Power247™ SuperSOT™-6
ActiveArray™ FAST MICROCOUPLER™ PowerTrench SuperSOT™-8
Bottomless™ FASTr™ MicroFET™ QFET SyncFET™
CoolFET™ FRFET™ MicroPak™ QS™ TinyLogic
CROSSVOLT™ GlobalOptoisolator™ MICROWIRE™ QT Optoelectronics™ TINYOPTO™
DOME™ GTO™ MSX™ Quiet Series™ TruTranslation™
EcoSPARK™ HiSeC™ MSXPro™ RapidConfigure™ UHC™
E2CMOSTM I2C™ OCX™ RapidConnect™ UltraFET
EnSigna TM
ImpliedDisconnect™ OCXPro™ SILENT SWITCHER VCX™
FACT™ ISOPLANAR™ OPTOLOGIC SMART START™
Across the board. Around the world.™ OPTOPLANAR™ SPM™
The Power Franchise™ PACMAN™ Stealth™
Programmable Active Droop™ POP™ SuperSOT™-3
DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I5
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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