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    S9018 (NPN) : Features

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    ran lan
    This document provides specifications for an NPN bipolar transistor in a TO-92 package. It lists maximum ratings for voltage and current, then provides typical values for electrical characteristics like breakdown voltage, current gain, saturation voltage, and transition frequency. The transistor has a current gain bandwidth product of 1.1 GHz and is rated for continuous collector current up to 50 mA, collector power dissipation of 0.4 W, and junction temperature of 150°C.

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    S9018 (NPN) : Features

    Uploaded by

    ran lan
    53 views2 pages
    This document provides specifications for an NPN bipolar transistor in a TO-92 package. It lists maximum ratings for voltage and current, then provides typical values for electrical characteristics like breakdown voltage, current gain, saturation voltage, and transition frequency. The transistor has a current gain bandwidth product of 1.1 GHz and is rated for continuous collector current up to 50 mA, collector power dissipation of 0.4 W, and junction temperature of 150°C.

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    S9018

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    This document provides specifications for an NPN bipolar transistor in a TO-92 package. It lists maximum ratings for voltage and current, then provides typical values for electrical characteristics like breakdown voltage, current gain, saturation voltage, and transition frequency. The transistor has a current gain bandwidth product of 1.1 GHz and is rated for continuous collector current up to 50 mA, collector power dissipation of 0.4 W, and junction temperature of 150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    53 views2 pages

    S9018 (NPN) : Features

    Uploaded by

    ran lan
    This document provides specifications for an NPN bipolar transistor in a TO-92 package. It lists maximum ratings for voltage and current, then provides typical values for electrical characteristics like breakdown voltage, current gain, saturation voltage, and transition frequency. The transistor has a current gain bandwidth product of 1.1 GHz and is rated for continuous collector current up to 50 mA, collector power dissipation of 0.4 W, and junction temperature of 150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    S9018(NPN)

    TO-92 Bipolar Transistors

    1. EMITTER TO-92
    2. BASE

    3. COLLECTOR

    Features

     High Current Gain Bandwidth Product fT=1.1 GHz (Typ)

    MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

    Symbol Parameter Value Units


    VCBO Collector-Base Voltage 25 V
    VCEO Collector-Emitter Voltage 18 V
    VEBO Emitter-Base Voltage 4 V
    Dimensions in inches and (millimeters)
    IC Collector Current -Continuous 50 mA
    PC Collector Power Dissipation 0.4 W
    Tj Junction Temperature 150 ℃
    Tstg Storage Temperature -55-150 ℃

    ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 25 V

    Collector-emitter breakdown voltage V(BR)CEO IC= 0. 1mA, IB=0 18 V

    Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 4 V

    Collector cut-off current ICBO VCB= 20V, IE=0 0.1 μA

    Collector cut-off current ICEO VCE=15V,IB=0 0.1 μA

    Emitter cut-off current IEBO VEB=3V, IC=0 0.1 μA

    DC current gain hFE VCE=5V, IC= 1mA 28 270

    Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.5 V

    Base-emitter saturation voltage VBE(sat) IC=10mA,IB=1mA 1.42 V

    VCE=5 V, IC=5mA
    Transition frequency fT f =400MHz
    600 MHz

    CLASSIFICATION OF hFE
    Rank D E F G H I J

    Range 28-45 39-60 54-80 72-108 97-146 132-198 180-270


    S9018(NPN)
    TO-92 Bipolar Transistors

    Typical Characteristics

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