Scribd Logo
Upload

Welcome to Scribd!

  • 136 views

    Bu1508dx PDF

    Uploaded by

    Alexis González
    This document provides specifications for the BU1508DX silicon NPN power transistor from Inchange Semiconductor. It is a high voltage, high speed switching transistor in a TO-220F package with a built-in damper diode. It is intended for use in horizontal deflection circuits of color TV receivers. The document lists maximum ratings, characteristics, and package outline dimensions for the transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Bu1508dx PDF

    Uploaded by

    Alexis González
    136 views3 pages
    This document provides specifications for the BU1508DX silicon NPN power transistor from Inchange Semiconductor. It is a high voltage, high speed switching transistor in a TO-220F package with a built-in damper diode. It is intended for use in horizontal deflection circuits of color TV receivers. The document lists maximum ratings, characteristics, and package outline dimensions for the transistor.

    Original Title

    BU1508DX.PDF

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for the BU1508DX silicon NPN power transistor from Inchange Semiconductor. It is a high voltage, high speed switching transistor in a TO-220F package with a built-in damper diode. It is intended for use in horizontal deflection circuits of color TV receivers. The document lists maximum ratings, characteristics, and package outline dimensions for the transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    136 views3 pages

    Bu1508dx PDF

    Uploaded by

    Alexis González
    This document provides specifications for the BU1508DX silicon NPN power transistor from Inchange Semiconductor. It is a high voltage, high speed switching transistor in a TO-220F package with a built-in damper diode. It is intended for use in horizontal deflection circuits of color TV receivers. The document lists maximum ratings, characteristics, and package outline dimensions for the transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors BU1508DX

    DESCRIPTION
    ・With TO-220F package
    ・High voltage
    ・High speed switching
    ・Built-in damper diode.

    APPLICATIONS
    ・For use in horizontal deflection circuits of
    colour TV receivers.

    PINNING

    PIN DESCRIPTION

    1 Base

    2 Collector
    Fig.1 simplified outline (TO-220F) and symbol
    3 Emitter

    Absolute maximum ratings (Ta=25℃)


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 1500 V

    VCEO Collector-emitter voltage Open base 700 V

    VEBO Emitter-base voltage Open collector 7.5 V

    IC Collector current 8 A

    ICM Collector current (peak) 15 A

    IB Base current 4 A

    IBM Base current (peak) 6 A

    PT Total power dissipation TC=25℃ 35 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -65~150 ℃


    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors BU1508DX

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V

    VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH 700 V

    VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.1A 1.0 V

    VBEsat Base-emitter saturation voltage IC=4.5A; IB=1.7A 1.3 V

    VCE=rated;VBE=0 1.0
    ICES Collector cut-off current mA
    Tj=125℃ 2.0

    IEBO Emitter cut-off current VEB=7.5V; IC=0 140 390 mA

    hFE-1 DC current gain IC=1A ; VCE=5V 13

    hFE-2 DC current gain IC=4.5A ; VCE=1V 4 5.5 7.0

    VF Diode forward voltage IF=4.5A 1.6 2.0 V

    CC Collector output capacitance IE=0;f=1MHz;VCB=10V 80 pF

    2
    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors BU1508DX

    PACKAGE OUTLINE

    Fig.2 Outline dimensions

    You might also like