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    3DD13009 Lge

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    elvariste jerry
    This document provides specifications for a TO-220 packaged NPN bipolar junction transistor. Key details include: - Maximum ratings for collector-base voltage, collector-emitter voltage, and emitter-base voltage. - Electrical characteristics including DC current gain, collector-emitter saturation voltage, base-emitter saturation voltage, and transition frequency. - Classification of transistors by DC current gain range. - Dimensions of the TO-220 transistor package.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    3DD13009 Lge

    Uploaded by

    elvariste jerry
    84 views2 pages
    This document provides specifications for a TO-220 packaged NPN bipolar junction transistor. Key details include: - Maximum ratings for collector-base voltage, collector-emitter voltage, and emitter-base voltage. - Electrical characteristics including DC current gain, collector-emitter saturation voltage, base-emitter saturation voltage, and transition frequency. - Classification of transistors by DC current gain range. - Dimensions of the TO-220 transistor package.

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    3DD13009-LGE

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    This document provides specifications for a TO-220 packaged NPN bipolar junction transistor. Key details include: - Maximum ratings for collector-base voltage, collector-emitter voltage, and emitter-base voltage. - Electrical characteristics including DC current gain, collector-emitter saturation voltage, base-emitter saturation voltage, and transition frequency. - Classification of transistors by DC current gain range. - Dimensions of the TO-220 transistor package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    84 views2 pages

    3DD13009 Lge

    Uploaded by

    elvariste jerry
    This document provides specifications for a TO-220 packaged NPN bipolar junction transistor. Key details include: - Maximum ratings for collector-base voltage, collector-emitter voltage, and emitter-base voltage. - Electrical characteristics including DC current gain, collector-emitter saturation voltage, base-emitter saturation voltage, and transition frequency. - Classification of transistors by DC current gain range. - Dimensions of the TO-220 transistor package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    3DD13009(NPN)

    TO-220 Transistor

    TO-220
    1. BASE

    2. COLLECTOR

    3. EMITTER
    3
    2
    Features
    1

    — power switching applications

    MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

    Symbol Parameter Value Units


    VCBO Collector-Base Voltage 700 V
    VCEO Collector-Emitter Voltage 400 V
    VEBO Emitter-Base Voltage 9 V
    Dimensions in inches and (millimeters)
    IC Collector Current -Continuous 12 A
    PC Collector Power Dissipation 2 W
    TJ Junction Temperature 150 ℃
    Tstg Storage Temperature -55-150 ℃

    ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO IC =1mA, IE=0 700 V

    Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 400 V

    Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V

    Collector cut-off current ICBO VCB=700V,IE=0 100 µA

    Collector cut-off current ICEO VCE=400V,IB=0 100 µA

    Emitter cut-off current IEBO VEB=9V, IC=0 100 µA

    DC current gain hFE VCE=5V, IC=3A 8 40

    Collector-emitter saturation voltage VCE(sat) IC=8A,IB=1.6A 1.5 V

    Base-emitter saturation voltage VBE(sat) IC=8A, IB=1.6A 1.6 V

    VCE=10V,Ic=500mA,
    Transition frequency fT 4 MHz
    f =1MHz

    Fall time tf IC=8A, IB1=-IB2=1.6A 0.9 µs

    Storage time ts VCC=125V 4 µs

    CLASSIFICATION OF hFE

    Rank

    Range 8-15 15-20 20-25 25-30 30-35 35-40


    3DD13009(NPN)
    TO-220 Transistor

    Typical Characteristics

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