SMD General Purpose

Transistor (NPN)
MMBT3904

SMD General Purpose Transistor (NPN)

Features
 NPN Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
 RoHS compliance

SOT-23
Mechanical Data
Case: SOT-23, Plastic Package

Terminals: Solderable per MIL-STD-202G, Method 208

Weight: 0.008 gram

Maximum Ratings (T Ambient=25ºC unless noted otherwise)

Symbol Description MMBT3904 Unit Conditions

VCEO Collector-Emitter Voltage 40 V

VCBO Collector-Base Voltage 60 V

VEBO Emitter-Base Voltage 6.0 V

IC Collector Current 200 mA

225 mW TA=25 ˚C
PD Total Device Power Dissipation(Note 1)
1.8 mW/°C Derate above 25 ˚C

RθJA Thermal Resistance, Junction to Ambient 556 °C /W

Total Device Power Dissipation, Alumina Substrate 300 mW TA=25 ˚C

PD (Note 2) 2.4 mW/°C Derate above 25 ˚C

RθJA Thermal Resistance, Junction to Ambient 417 °C /W

TJ Junction Temperature -55 to +150 °C

TSTG Storage Temperature Range -55 to +150 °C

Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.)
2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina.

TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Rev. C/CZ

Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Page 1 of 9
Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
 SMD General Purpose Transistor (NPN)

MMBT3904
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
Symbol Description Min. Max. Unit Conditions
Collector-Emitter Breakdown Voltage
V(BR)CEO (Pulse width ≤300µs, Duty Cycle ≤2.0%)
40 - V IC=1mA, IB=0

V(BR)CBO Collector-Base Breakdown Voltage 60 - V IC=10µA, IE=0

V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=10µA, IC=0
IBL Base Cut-off Current - 50 nA VEB=3V, VCE=30V
ICEX Collector Cut-off Current - 50 nA VEB=3V, VCE=30V

On Characteristics
Symbol Description Min. Max. Unit Conditions

40 - VCE=1V, IC=0.1mA
70 - VCE=1V, IC=1mA
hFE D.C. Current Gain 100 300 VCE=1V, IC=10mA
60 - VCE=1V, IC=50mA
30 - VCE=1V, IC=100mA
- 0.2 IC=10mA, IB=1mA
VCE(sat) Collector-Emitter Saturation Voltage V
- 0.3 IC=50mA, IB=5mA
0.65 0.85 IC=10mA, IB=1mA
VBE(sat) Base-Emitter Saturation Voltage V
- 0.95 IC=50mA, IB=5mA
Small-signal Characteristics
Symbol Description Min. Max. Unit Conditions

VCE=20V, IC=10mA,
fT Current Gain-Bandwidth Product 300 - MHz
f=100MHz
VCB=5V, f=1.0MHz,
COBO Output Capacitance - 4.0 pF
IE=0
VEB=0.5V, f=1.0MHz,
CIBO Input Capacitance - 8.0 pF
IC=0
VCE=10V, IC=1mA,
hie Input Impedance 1.0 10 kohms
f=1kHz
-4 VCE=10V, IC=1mA,
hre Voltage Feedback Ratio 0.5 8.0 x 10
f=1kHz
VCE=10V, IC=1mA,
hfe Small-Signal Current Gain 100 400 -
f=1kHz
VCE=10V, IC=1mA,
hoe Output Admittance 1.0 40 UMHOS
f=1kHz
VCE=5V, IC=100µA,
NF Noise Figure - 5.0 dB
Rs=1.0kohms, f=1kHz

Rev. C/CZ
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 SMD General Purpose Transistor (NPN)

MMBT3904
Switching Characteristics
Symbol Description Min. Max. Unit Conditions

td Delay Time - 35 VCC=3V, VBE=-0.5V

tr Rise Time - 35 IC=10mA, IB1=1mA
ns
ts Storage Time - 200 VCC=3V, IC=10mA,
tf Fall Time - 50 IB1= IB2=1mA

Equivalent Test Circuit

Fig.1- Delay and Rise Time Fig.2- Storage and Fall Time

Total Shunt Capacitance of test jig and connectors

Rev. C/CZ
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 SMD General Purpose Transistor (NPN)

MMBT3904
Typical Characteristics Curves ( TJ =25°C --- TJ =125°C )
Fig.3- Capacitance Fig.4- Charge Data
Capacitance (pF)

Charge Q (pC)

Reverse Bias Voltage (V) Collector Current IC (mA)

Fig.5- Turn-On Time Fig.6- Rise Time

Rise Time tr (nS)
Time (ns)

Collector Current IC (mA) Collector Current IC (mA)

Rev. C/CZ
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 SMD General Purpose Transistor (NPN)

MMBT3904
Fig.7- Storage Time Fig.8- Fall Time
Storage Time ts (ns)

Fall Time tf (ns)

Collector Current IC (mA) Collector Current IC (mA)

Typical Audio Small-Signal Characteristics Noise Figure Variations

(VCE=5.0 V. TA=25°C, Bandwidth=1.0Hz)

Fig.9- Noise Figure Fig.10- Noise Figure

Noise Figure NF (dB)

Noise Figure NF (dB)

Frequency f (kHz) Source Resistance RS (kΩ)

Rev. C/CZ
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 SMD General Purpose Transistor (NPN)

MMBT3904
h Parameters (VCE=10V, f=1.0kHz, TA=25°C)
Fig.11- Current Gain Fig.12- Output Admittance

Output Admittance hoe (μ mhos)

Current Gain hfe

Collector Current IC (mA) Collector Current IC (mA)

Fig.13- Input Impedance Fig.14- Voltage Feedback Ratio

Voltage Feedback Ratio hfe (x10 )
-4
Input Impedance hie (KΩ)

Collector Current IC (mA) Collector Current IC (mA)

Rev. C/CZ
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 SMD General Purpose Transistor (NPN)

MMBT3904
Typical Static Characteristics

Fig.15- DC Current Gain

DC Current Gain hFE (Normalized)

Collector Current IC (mA)

Fig.16- Collector Saturation Region

Collector-Emitter Voltage VCE (V)

Base Current IB (mA)

Rev. C/CZ
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 SMD General Purpose Transistor (NPN)

MMBT3904
Fig.17- “On” Voltage Fig.18- Temperature Coefficients

Temperature Coefficient (mV/°C)

Voltage (V)

Collector Current IC (mA) Collector Current IC (mA)

Device Marking: MMBT3904=1A/1AM/ZC

Dimensions in mm
SOT-23

Rev. C/CZ
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 SMD General Purpose Transistor (NPN)

MMBT3904

How to contact us

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Http://www.taitroncomponents.com

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Rev. C/CZ
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