Silicon N-Channel Power MOSFET

○
R

CS10N50F A9R

General Description： VDSS 500 V

CS10N50F A9R, the silicon N-channel Enhanced ID 10 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 40 W

which reduce the conduction loss, improve switching RDS(ON)Typ 0.5 Ω

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤0.75Ω)
l Low Gate Charge (Typical Data:32nC)

l Low Reverse transfer capacitances(Typical:8.4pF)

l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter Rating Units
VDSS Drain-to-Source Voltage 500 V
Continuous Drain Current 10 A
ID
Continuous Drain Current T C = 100 °C 6.3 A
a1
IDM Pulsed Drain Current 40 A
VGS Gate-to-Source Voltage ±30 V
a2
EAS Single Pulse Avalanche Energy 580 mJ
a3
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
Power Dissipation 40 W
PD
Derating Factor above 25°C 0.32 W/℃
TJ，T stg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃
TL Maximum Temperature for Soldering 300 ℃

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Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics
Rating Unit
Symbol Parameter Test Conditions
Min. Typ. Max. s
VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA 500 -- -- V

ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.6 -- V/℃

VDS =500V, V GS= 0V,
Ta = 25℃ -- -- 1 µA
IDSS Drain to Source Leakage Current VDS =400V, V GS= 0V,
Ta = 125℃ -- -- 100 µA

IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA

IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =5A -- 0.5 0.75 Ω
VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA 2.0 -- 4.0 V
Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
g fs Forward Transconductance VDS=15V, ID =5A -- 10 -- S
C iss Input Capacitance -- 1620 --
VGS = 0V V DS = 25V
C oss Output Capacitance f = 1.0MHz -- 154 -- pF
C rss Reverse Transfer Capacitance -- 8.4 --

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 26 --
tr Rise Time ID =10A VDD = 250V -- 20 --
RG =10Ω ns
td(OFF) Turn-Off Delay Time -- 52 --
tf Fall Time -- 21 --
Qg Total Gate Charge -- 32 --
ID =10A V DD =400V
Qgs Gate to Source Charge VGS = 10V -- 7.9 -- nC
Qgd Gate to Drain (“Miller”)Charge -- 12 --

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Source-Drain Diode Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 10 A
ISM Maximum Pulsed Current (Body Diode) -- -- 40 A
VSD Diode Forward Voltage IS =10A,VGS=0V -- -- 1.5 V
trr Reverse Recovery Time -- 411 -- ns
IS =10A,Tj = 25℃
Qrr Reverse Recovery Charge dIF /dt=100A/us, -- 2588 -- nC
VGS=0V
IRRM Reverse Recovery Current -- 12.6 -- A
Pulse width tp≤300µs,δ≤2%

Symbol Parameter Typ. Units

R θ JC Junction-to-Case 3.13 ℃/W
R θ JA Junction-to-Ambient 62.5 ℃/W

a1
：Repetitive rating; pulse width limited by maximum junction temperature
a2
：L=10mH, ID=10.8A, Start T J=25℃
a3
：ISD =10A,di/dt ≤100A/us,V DD≤BV DS, Start T J=25℃

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Characteristics Curve：
100 40

PD , Power Dissipation ，Watts

Id , Drain Current , Amps

10 30
100us

1ms
1 20
10ms
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
0 .1 TJ=MAX RATED 10
DC
TC=25℃ Single Pulse

0 .0 1 0
1 10 100 1000 0 25 50 75 100 125 150
V d s , D r a in - t o - S o u r c e V o lta g e , V o lts TC , Case Temperature , C
Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power Dissipation vs Case Temperature
15 32
250us Pluse Test
Tc = 25℃
Id , Drain Current , Amps

Id , Drain Current , Amps

VGS=10V
24
10
VGS=7V

16
VGS=5V
VGS=6V
5
8 VGS=4.5V

0 0
0 25 50 75 100 125 150 0 5 10 15 20 25
TC , Case Tem perature , C Vds , Drain-to-Source Voltage , Volts
Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 4 Typical Output Characteristics

Figure 5 Maximum Effective Thermal Impendance , Junction to Case

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30 16

Isd, Reverse Drain Current , Amps

250us Pulse Test
Id , Drain Current , Amps

VDS=20V

12
20

8
+150℃
+25℃
10
+25℃
+150℃ 4

0 0
2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2
Vgs , Gate to Source Voltage , Volts Vsd , Source - Drain Voltage , Volts
Figure 6 Typical Transfer Characteristics Figure 7 Typical Body Diode Transfer Characteristics

0.9 2.5
Rds(on), Drain to Source ON Resistance,

PULSE DURATION = 10μs PULSE DURATION = 10μs

DUTY CYCLE= 0.5%MAX 2.25 DUTY CYCLE= 0.5%MAX
Rds(on), Drain to Source ON

Tc =25 ℃ VGS=10V ID=5A

0.8 2
Resistance, Ohms

VGS=10V 1.75
Nomalized

0.7 1.5

1.25

0.6 1

0.75
0.5 0.5
0 4 8 12 16 -50 0 50 100 150
Id , Drain Current , Amps Tj, Junction temperature , C
Figure 8 Typical Drain to Source ON Resistance Figure 9 Typical Drian to Source on Resistance
vs Drain Current vs Junction Temperature

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1.15 1.15
Vgs(th),Threshold Voltage, Nomalized

1.1

Breakdown Voltage, Normalized

1.05
1.05

Bvdss,Drain to Source
1
0.95
VGS=0V
0.9 VGS=0V 0.95 ID=250μA
ID=250μA
0.85
0.8
0.85
0.75
0.7
0.65 0.75
-75 -50 -25 0 25 50 75 100 125 150 175 -55 -30 -5 20 45 70 95 120 145 170
Tj, Junction temperature , C Tj, Junction temperature , C

Figure 10 Typical Theshold Voltage vs Junction Temperature Figure 11 Typical Breakdown Voltage vs Junction Temperature

12
Vgs , Gate to Source Voltage ,Volts

10 VDS=100V
VDS=250V
8 VDS=400V

4
VGS=0V , f=1MHz
Ciss=Cgs+Cgd 2
Coss=Cds+Cgd
Crss=Cgd ID=10A
0
0 8 16 24 32 40
Qg , Total Gate Charge , nC

Figure 12 Typical Capacitance vs Drain to Source Voltage Figure 13 Typical Gate Charge vs Gate to Source Voltage

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Test Circuit and Waveform

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Package Information

Values(mm)
Items
MIN MAX
A 9.60 10.40
B 15.40 16.20
B1 8.15 8.75
C 4.30 4.90
C1 2.10 3.00
D 2.40 3.00
E 0.60 1.00
F 0.30 0.60
G 1.12 1.42
3.40 3.80
H
2.00 2.40
12.00 14.00
L
6.30 7.70
N 2.34 2.74
Q 3.15 3.55
3.00 3.30

TO-220F Package

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The name and content of poisonous and harmful material in products

Part’s Name
Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE
Limit ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1%

Lead Frame ○ ○ ○ ○ ○ ○
Molding Compound ○ ○ ○ ○ ○ ○
Chip ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○
○：means the hazardous material is under the criterion of SJ/T11363-2006.
×：means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup’s RoHS.

Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn HTU UTH

Tel: +86 0510-85807228 Fax: +86- 0510-85800864

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Fax: +86 0510-85800360/85803016
E-mail：[email protected]

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