Silicon N-Channel Power MOSFET ○

CS5N50F A9R

General Description ： VDSS 500 V

CS5N50F A9R, the silicon N-channel Enhanced ID 5 A
VDMOSFETs, is obtained by the self-aligned planar Technology P D(TC=25℃) 30 W

which reduce the conduction loss, improve switching RDS(ON)Typ 1.3 Ω

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features：
 Fast Switching
 Low ON Resistance(Rdson≤1.5Ω)
 Low Gate Charge (Typical Data: 12.6nC)

 Low Reverse transfer capacitances(Typical:4pF)

 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter Rating Units
VDSS Drain-to-Source Voltage 500 V
Continuous Drain Current 5 A
ID
Continuous Drain Current TC = 100 °C 3.1 A
a1
IDM Pulsed Drain Current 20 A
VGS Gate-to-Source Voltage ±30 V
a2
EAS Single Pulse Avalanche Energy 250 mJ
a3
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
Power Dissipation 30 W
PD
Derating Factor above 25°C 0.24 W/℃
TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃
TL Maximum Temperature for Soldering 300 ℃

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Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics
Rating Unit
Symbol Parameter Test Conditions
Min. Typ. Max. s
VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA 500 -- -- V

ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.6 -- V/℃

VDS =500V, VGS= 0V,
Ta = 25℃ -- -- 1 µA
IDSS Drain to Source Leakage Current VDS =400V, VGS= 0V,
Ta = 125℃ -- -- 100 µA

IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA

IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=2.5A -- 1.3 1.5 Ω
VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 -- 4.0 V
Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
gfs Forward Trans conductance VDS=15V, ID =2.5A -- 4 -- S
Ciss Input Capacitance -- 584 --
VGS = 0V VDS = 25V
Coss Output Capacitance f = 1.0MHz -- 61 -- pF
Crss Reverse Transfer Capacitance -- 4 --

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 14 --
tr Rise Time ID =5A VDD = 250V -- 18 --
R G =10Ω ns
td(OFF) Turn-Off Delay Time -- 32 --
tf Fall Time -- 11 --
Qg Total Gate Charge -- 12.6 --
ID =5A VDD =400V
Qgs Gate to Source Charge VGS = 10V -- 3.1 -- nC
Qgd Gate to Drain (“Miller”)Charge -- 4.9 --

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Source-Drain Diode Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 5 A
ISM Maximum Pulsed Current (Body Diode) -- -- 20 A
VSD Diode Forward Voltage IS=5.0A,VGS=0V -- -- 1.5 V
trr Reverse Recovery Time -- 328 -- ns
IS=5.0A,Tj = 25℃
Qrr Reverse Recovery Charge dIF/dt=100A/us, -- 1555 -- nC
VGS=0V
IRRM Reverse Recovery Current -- 9.5 -- A
Pulse width tp≤300µs,δ≤2%

Symbol Parameter Typ. Units

Rθ JC Junction-to-Case 4.17 ℃/W
Rθ JA Junction-to-Ambient 62.5 ℃/W

a1
：Repetitive rating; pulse width limited by maximum junction temperature
a2
：L=10mH, I D=7.1A, Start TJ =25℃
a3
：ISD =5A,di/dt ≤100A/us,V DD≤BV DS, Start TJ=25℃

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Characteristics Curve：
100 40

PD , Power Dissipation ，Watts

Id , Drain Current , Amps

10 30

100us

1 20
1ms
OPERATION IN THIS AREA 10ms
MAY BE LIMITED BY RDS(ON) DC
TJ=MAX RATED 10
0.1
TC=25℃ Single Pulse

0
0.01
0 25 50 75 100 125 150
1 10 100 1000
TC , Case Temperature , C
Vds , Drain-to-Source Voltage , Volts
Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power Dissipation vs Case Temperature
7.5 10
250us Pluse Test
Tc = 25℃
Id , Drain Current , Amps

VGS=10V
Id , Drain Current , Amps

7.5
5
VGS=6V

5
VGS=5V
VGS=5.5V
2.5
VGS=4.5V
2.5

0 0
0 25 50 75 100 125 150 0 5 10 15 20 25
TC , Case Temperature , C Vds , Drain-to-Source Voltage , Volts
Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 4 Typical Output Characteristics

Figure 5 Maximum Effective Thermal Impedance , Junction to Case

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12 8

Isd, Reverse Drain Current , Amps

250us Pulse Test 7
Id , Drain Current , Amps

VDS=20V

6
8
5

4
+150℃
+25℃ 3
4
+25℃
+150℃ 2

0 0
2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2
Vgs , Gate to Source Voltage , Volts Vsd , Source - Drain Voltage , Volts
Figure 6 Typical Transfer Characteristics Figure 7 Typical Body Diode Transfer Characteristics

1.7 2.5
Rds(on), Drain to Source ON Resistance,

PULSE DURATION = 10μs PULSE DURATION = 10μs

DUTY CYCLE= 0.5%MAX 2.25 DUTY CYCLE= 0.5%MAX
Rds(on), Drain to Source ON

Tc =25 ℃ VGS=10V ID=2.5A

1.6 2
Resistance, Ohms

VGS=10V 1.75
Nomalized

1.5 1.5

1.25

1.4 1

0.75

1.3 0.5
0 1 2 3 4 -50 0 50 100 150
Id , Drain Current , Amps Tj, Junction temperature , C

Figure 8 Typical Drain to Source ON Resistance Figure 9 Typical Drian to Source on Resistance
vs Drain Current vs Junction Temperature

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1.15 1.15
Vgs(th),Threshold Voltage, Nomalized

1.1

Breakdown Voltage, Normalized

1.05
1.05

Bvdss,Drain to Source
1
0.95
VGS=0V
0.9 VGS=0V 0.95 ID=250μA
ID=250μA
0.85
0.8
0.85
0.75
0.7
0.65 0.75
-75 -50 -25 0 25 50 75 100 125 150 175 -55 -30 -5 20 45 70 95 120 145 170
Tj, Junction temperature , C Tj, Junction temperature , C

Figure 10 Typical Theshold Voltage vs Junction Temperature Figure 11 Typical Breakdown Voltage vs Junction Temperature

12
Vgs , Gate to Source Voltage ,Volts

10 VDS=400V
ID=5A
8

0
0 3 6 9 12 15
Qg , Total Gate Charge , nC

Figure 12 Typical Capacitance vs Drain to Source Voltage Figure 13 Typical Gate Charge vs Gate to Source Voltage

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Test Circuit and Waveform：

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Package Information ：

Values(mm)
Items
MIN MAX
A 9.60 10.4
B 15.4 16.2
B1 8.90 9.50
C 4.30 4.90
C1 2.10 3.00
D 2.40 3.00
E 0.60 1.00
F 0.30 0.60
G 1.12 1.42
3.40 3.80
H
2.40 2.90
L* 12.0 14.0
N 2.34 2.74
Q 3.15 3.55
2.90 3.30
*adjustable
TO-220F Package
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The name and content of poisonous and harmful material in products

Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP

Limit ≤
≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1%
0.01%

Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Compound
Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○
○：Means the hazardous material is under the criterion of 2011/65/EU.
×：Means the hazardous material exceeds the criterion of 2011/65/EU.
Note
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup’s RoHS.

Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heat sink, please pay attention to the torsional moment and the smoothness
of the heat sink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

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