ARF300

125V, 300W, 45MHz

RF POWER MOSFET
N-CHANNEL ENHANCEMENT MODE

The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package.

It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at
frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF
power transistor making the pair well suited for bridge configurations

• Specified 125 Volt, 27 MHz Characteristics: • High Performance

Output Power = 300 Watts. • High Voltage Breakdown and Large SOA
Gain = 15dB (Class E) for Superior Ruggedness
Efficiency = 80% • Low Thermal Resistance.
• RoHS Compliant • Capacitance matched with ARF301 P-Channel

Maximum Ratings All Ratings: TC =25°C unless otherwise specified

Symbol Parameter Ratings Unit
VDSS Drain-Source Voltage 500
V
VDGO Drain-Gate Voltage 500
ID Continuous Drain Current @ TC = 25°C 24 A
VGS Gate-Source Voltage ±30 V
PD Total Power Dissipation @ TC = 25°C 1000 W
TJ, TSTG Operating and Storage Junction Temperature Range -55 to 175
°C
TL Lead Temperature: 0.063” from Case for 10 Sec. 300

Static Electrical Characteristics

Symbol Parameter Min Typ Max Unit
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 500
V
VDS(ON) On State Drain Voltage 1 (ID(ON) = 12A, VGS = 10V) 3 4
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25
IDSS μA
Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C) 250
IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) ±100 nA
gfs Forward Transconductance (VDS = 15V, ID = 12A) 5 8 mhos
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 10mA) 2.5 4 5 Volts

Thermal Characteristics
Symbol Parameter Min Typ Max Unit
RθJC Junction to Case 0.15
°C/W
RθJHS
050-4948 Rev B 9-2010

Junction to Sink (High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.27

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

 Dynamic Characteristics ARF300
Symbol Parameter Test Conditions Min Typ Max Unit
CISS Input Capacitance VGS = 0V 1890 2100
Coss Output Capacitance VDS = 50V 350 390 pF
Crss Reverse Transfer Capacitance f = 1MHz 75 90

Functional Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
GPS Common Source Amplifier Power Gain f = 27MHz 15 17 dB
η Drain Efficiency Idq = 0mA VDD = 125V 80 85 %
Ψ Electrical Ruggedness VSWR 10:1 POUT = 300W No Damage

1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Dynamic Characteristics

1.0E−8 60
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
ID, DRAIN CURRENT (AMPERES)

@ <0.5 % DUTY CYCLE

Ciss 50
TJ = -55°C
1.0E−9 40
CAPACITANCE

TJ = +25°C
30
Coss

1.0E−10 20
Crss
10
TJ = +125°C

1.0E−11 0
0 50 100 150 200 250 300 2 4 6 8 10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Capacitance vs. Drain-to-Source Voltage Figure 2, Typical Transfer Characteristics

100
OPERATION HERE
LIMITED BY R (ON)
DS
ID, DRAIN CURRENT (AMPERES)

ID Max
BVdss Line
n
O
s
Rd

10
100µs 1ms
PD
Lin
e

TC =+25°C 10ms
TJ =+175°C 100ms
SINGLE PULSE
1
050-4948 Rev B 9-2010

1 10 100 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Maximum Safe Operating Area
Dynamic Characteristics ARF300
8 60
15V
10V
7

ID, DRAIN CURRENT (AMPERES)

VGS(th), THRESHOLD VOLTAGE 50
8V
6
40
5 7.5V

4 30
6.5V
3
20
2 6V
10
1 5.5V

0 0
-50 0 50 100 150 0 5 10 15 20 25 30

TC, CASE TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 4, Typical Threshold Voltage vs Temperature Figure 5, Typical Output Characteristics

0.16

0.14 D = 0.9

0.12
0.7
0.10

0.08 0.5

0.06
0.3
0.04

0.02 0.1
0.05 SINGLE PULSE
0
10-4 10-310-2 10-1 0.1 1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 6a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

TJ (˚C) TC (˚C)

ZEXT are the external thermal

0.068 0.062 0.019
ZEXT

impedances: Case to sink,

Dissipated Power
sink to ambient, etc. Set to
(Watts)
zero when modeling only
0.0150 0.135 2.133 the case to junction.

Figure 6b, TRANSIENT THERMAL IMPEDANCE MODEL

Table 1 - Typical Class AB Large Signal Input - Output Impedance

Freq. (MHz) Zin (Ω) ZOL (Ω)

2.0 18 - j 10.5 21 - j 1.4
13.56 2.66 - j 4.6 17.5 - j 7.8
27.12 1.79 - j 1.6 11.7 - j 10.4
40.68 1.68 - j 0.14 7.7 - j 10
050-4948 Rev B 9-2010

ZIN - Gate shunted with 25Ω Idq = 0

ZOL - Conjugate of optimum load for 300 Watts output at Vdd=125V
 ARF300

T11 Package Outline

1.141

Use 4-40 (M3) screws for mounting.

0.04
0.16 Torque = 4-6 in-lb (0.45- 0.7 Nm).

0.009
0.963

0.135
0.890

ATTENTION: This is a high power device.

0.237 S D S Special considerations must be followed in
R0.125 mounting to ensure proper operation of
these devices. Incorrect mounting can
cause internal temperatures to exceed the
0.507 maximum allowable operating junction
temperature.
0.257 Refer to Microsemi Application Note #1810
0.980 before starting system design.
http://www.microsemi.com/support/
D 0.125 micnotes/1810.pdf
R0.050

S G S
050-4948 Rev B 9-2010

0.100 x 4 0.140 x 6