Silicon N-Channel Power MOSFET

○
R

CS830 A4RD

General Description： VDSS 500 V

CS830 A4RD, the silicon N-channel Enhanced ID 5 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 W

which reduce the conduction loss, improve switching RDS(ON)Typ 1.25 Ω

performance and enhance the avalanche energy. The

transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features：
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:14.5nC)

l Low Reverse transfer capacitances(Typical:7.5pF)

l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter Rating Units
VDSS Drain-to-Source Voltage 500 V
Continuous Drain Current 5 A
ID
Continuous Drain Current T C = 100 °C 3.4 A
a1
IDM Pulsed Drain Current 20 A
VGS Gate-to-Source Voltage ±30 V
a2
EAS Single Pulse Avalanche Energy 200 mJ
a1
EAR Avalanche Energy ,Repetitive 30 mJ
a1
IAR Avalanche Current 2.5 A
a3
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
Power Dissipation 75 W
PD
Derating Factor above 25°C 0.6 W/℃
VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ) 3000 V

TJ，T stg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃
TL Maximum Temperature for Soldering 300 ℃

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Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics
Rating Unit
Symbol Parameter Test Conditions
Min. Typ. Max. s
VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA 500 -- -- V

ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.67 -- V/℃

VDS =500V, V GS= 0V,
Ta = 25℃ -- -- 1 µA
IDSS Drain to Source Leakage Current VDS =400V, V GS= 0V,
Ta = 125℃ -- -- 100 µA

IGSS(F) Gate to Source Forward Leakage VGS =+20V -- -- 10 µA

IGSS(R) Gate to Source Reverse Leakage VGS =-20V -- -- -10 µA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =2.5A -- 1.25 1.5 Ω
VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA 2.0 4.0 V
Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
g fs Forward Trans conductance VDS=15V, ID =2.5A 4 -- S
C iss Input Capacitance -- 540
VGS = 0V V DS = 25V
C oss Output Capacitance f = 1.0MHz -- 68 pF
C rss Reverse Transfer Capacitance -- 7.5

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 9 --
tr Rise Time ID =5A VDD = 250V -- 11 --
RG =9.1Ω ns
td(OFF) Turn-Off Delay Time -- 29 --
tf Fall Time -- 16 --
Qg Total Gate Charge -- 14.5
Qgs Gate to Source Charge ID =5A V DD =250V -- 3
VGS = 10V nC
Qgd Gate to Drain (“Miller”)Charge -- 6.5

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Source-Drain Diode Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 5 A
ISM Maximum Pulsed Current (Body Diode) -- -- 20 A
VSD Diode Forward Voltage IS =5.0A,V GS =0V -- -- 1.5 V
trr Reverse Recovery Time IS =5.0A,Tj = 25°C -- 388 -- ns
dIF /dt=100A/us,
Qrr Reverse Recovery Charge VGS=0V -- 1720 -- nC
Pulse width tp≤300µs,δ≤2%

Symbol Parameter Typ. Units

R θJC Junction-to-Case 1.67 ℃/W
R θJA Junction-to-Ambient 62.5 ℃/W

Gate-source Zener diode

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
V GSO Gate-source breakdown voltage I GS = ±1mA(Open Drain) 30 V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

a1
：Repetitive rating; pulse width limited by maximum junction temperature
a2
：L=10mH, ID=6.3A, Start TJ=25℃
a3
：ISD =5A,di/dt ≤100A/us,V DD ≤BV DS, Start TJ =25℃

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Characteristics Curve：
100 100

PD , Power Dissipation ，Watts

Id , Drain Current , Amps

10 75
10us
100us
1ms
1 50

OPERATION IN THIS AREA 10ms

MAY BE LIMITED BY RDS(ON) 100ms
0 .1 TJ=MAX RATED 25
TC=25℃ Single Pulse DC

0 .0 1 0
1 10 100 1000 0 25 50 75 100 125 150
V d s , D ra in -to - S o u r c e V o lta g e , V o lts TC , Case Temperature , C

Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power Dissipation vs Case Temperature
6 6
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
5
Id , Drain Current , Amps

Tc = 25℃
VGS=15V
Id , Drain Current , Amps

4.5
4
VGS=7V

3 3
VGS=6V
VGS=6.5V
2
1.5 VGS=5.5V
VGS=4.5V
1

0 0
0 25 50 75 100 125 150 0 5 10 15 20 25
TC , Case Tem perature , C Vds , Drain-to-Source Voltage , Volts
Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 4 Typical Output Characteristics
1
50%
Thermal Impedance, Normalized

20%

0.1 10%
5%

2%
PDM
t1
t2
0.01
1%
Single pulse
NOTES：
DUTY FACTOR ：D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC

0.001
0.00001 0.0001 0.001 0.01 0.1 1
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case

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100
TRANSCONDUCTANCE MAY LIMIT
FOR TEMPERATURES
CURRENT IN THIS REGION
ABOVE 25℃ DERATE PEAK
Idm , Peak Current , Amps

CURRENT AS FOLLOWS:
 150 − TC 
I = I 25  
 125 
10

1
1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01
t ，Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
9 6
PULSE DURATION = 10μs
PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX
Rds(on), Drain to Source ON
Id , Drain Current , Amps

7.5 DUTY CYCLE = 0.5%MAX 5 Tc =25 ℃

VDS=30V
Resistance , Ohms

6 4
ID=5A

ID= 2.5A
4.5 3
ID= 1.25A
3 -55℃ 2
+25℃
1.5 1
+150℃

0 0
2 3 4 5 6 4 8 610 12 14
Vgs , Gate to Source Voltage , Volts Vgs , Gate to Source Voltage，Volts
Figure 7 Typical Transfer Characteristics Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3 2.5
Rds(on), Drain to Source ON Resistance,

PULSE DURATION = 10μs

PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX 2.25 DUTY CYCLE= 0.5%MAX
Rds(on), Drain to Source ON

Tc =25 ℃
VGS=10V ID=2.5A
2.5 2
Resistance, Ohms

1.75
Nomalized

VGS=20V
2 1.5

1.25

1
1.5
0.75

0.5
1
-50 0 50 100 150
0 1 2 3 4
Tj, Junction temperature , C
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance Figure 10 Typical Drian to Source on Resistance
vs Drain Current vs Junction Temperature

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1.15
1.1
Vgs(th),Threshold Voltage, Nomalized

1.1

Breakdown Voltage, Normalized

1.05

Bvdss,Drain to Source
1.05
1
0.95
0.9 1
0.85
0.8
0.95 VGS=0V
0.75 VGS=0V
ID=250μA
0.7 ID=250μA

0.65 0.9
-75 -50 -25 0 25 50 75 100 125 150 175 -55 -30 -5 20 45 70 95 120 145 170
Tj, Junction temperature , C Tj, Junction temperature , C
Figure 11 Typical Theshold Voltage vs Junction Temperature Figure 12 Typical Breakdown Voltage vs Junction Temperature

10000 12
VDS=150V

Vgs , Gate to Source Voltage ,Volts

10 VDS=300V
1000 Ciss
VDS=400V
Capacitance , pF

100 Coss 6

VGS=0V , f=1MHz 4
10 Ciss=Cgs+Cgd Crss
Coss=Cds+Cgd
Crss=Cgd 2
ID=5A
1 0
0.1 1 10 100 0 2 4 6 8 10 12 14 16 18 20
Vds , Drain - Source Voltage , Volts Qg , Total Gate Charge , nC
Figure 13 Typical Capacitance vs Drain to Source Voltage Figure 14 Typical Gate Charge vs Gate to Source Voltage
8 100
Isd, Reverse Drain Current , Amps

7
Id , Drain Current , Amps

STARTING Tj = 25℃
6
10 STARTING Tj = 150℃
5

4
+150℃
3
+25℃ 1
2 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD)
-55℃
If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]
R equals total Series resistance of Drain circuit
1

0 0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00
Vsd , Source - Drain Voltage , Volts tav,Time in Avalanche,Seconds
Figure 15 Typical Body Diode Transfer Characteristics Figure 16 Unclamped Inductive Switching Capability

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Test Circuit and Waveform

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Package Information：

Values(mm)
Items
MIN MAX
A 6.30 6.90
A1 0 0.13
B 5.70 6.30
C 2.10 2.50
D 0.30 0.60
E1 0.60 0.90
E2 0.70 1.00
F 0.30 0.60
G 0.70 1.00
L1 9.60 10.30
L2 2.70 3.10
H 0.60 1.00
M 5.10 5.50
N 2.09 2.49
R 0.3
T 1.40 1.60
Y 5.10 6.30
TO-252 Package

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The name and content of poisonous and harmful material in products

Part’s Name
Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE
Limit ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1%

Lead Frame ○ ○ ○ ○ ○ ○
Molding Compound ○ ○ ○ ○ ○ ○
Chip ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○
○：means the hazardous material is under the criterion of SJ/T11363-2006.
×：means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup’s RoHS.

Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn HTU UTH

Tel: +86 0510-85807228 Fax: +86- 0510-85800864

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Fax: +86 0510-85800360/85803016
E-mail：[email protected]

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