Silicon N-Channel Power Trench MOSFET ○

CS100N06 D4

General Description ： VDSS 60 V

CS100N06 D4 the silicon N-channel Enhanced ID（ Silicon limited current ） 100 A
VDMOSFETs, is obtained by the high density Trench technology P D(TC=25℃) 125 W
which reduce the conduction loss, improve switching RDS(ON)Typ 6.5 mΩ

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-252, which accords with the RoHS standard.
Features：
 Fast Switching
 Low ON Resistance (Rdson≤10mΩ)
 Low Gate Charge (Typical Data: 88.8nC)

 Low Reverse transfer capacitances(Typical:220pF)

 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter Rating Units
VDSS Drain-to-Source Voltage 60 V
Continuous Drain Current 100 A
ID
Continuous Drain Current TC = 100 °C 70 A
a1
IDM Pulsed Drain Current 400 A
VGS Gate-to-Source Voltage ±20 V
a2
EAS Single Pulse Avalanche Energy 211 mJ
PD Power Dissipation 125 W
TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃
TL Maximum Temperature for Soldering 300 ℃

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Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA 60 -- -- V
VDS = 60V, VGS= 0V,
Ta = 25℃ -- -- 1
IDSS Drain to Source Leakage Current VDS =48V, VGS= 0V, µA
Ta = 125℃ -- -- 100

IGSS(F) Gate to Source Forward Leakage VGS =+20V -- -- 100 nA

IGSS(R) Gate to Source Reverse Leakage VGS =-20V -- -- -100 nA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
VGS=10V,ID=30A -- 6.5 10 mΩ
RDS(ON) Drain-to-Source On-Resistance
VGS=4.5V,ID=30A -- 9.1 12 mΩ
VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA 1.0 3.0 V
Pulse width tp≤380µs,δ≤2%

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2.4 Ω
Ciss Input Capacitance -- 4398 --
VGS = 0V VDS = 25V
Coss Output Capacitance f = 1.0MHz -- 296 -- pF
Crss Reverse Transfer Capacitance -- 220 --

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 25.3 --
tr Rise Time ID =8A VDD =30V -- 95.7 --
VGS = 10V R G =9.1Ω ns
td(OFF) Turn-Off Delay Time -- 154 --
tf Fall Time -- 77.9 --
Qg Total Gate Charge -- 88.8
ID =20A VDD =30V
Qgs Gate to Source Charge VGS = 10V -- 17.3 -- nC
Qgd Gate to Drain (“Miller”)Charge -- 17.4 --

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Source-Drain Diode Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 100 A
ISM Maximum Pulsed Current (Body Diode) -- -- 400 A
VSD Diode Forward Voltage IS=30A,VGS=0V -- -- 1.5 V
trr Reverse Recovery Time IS=30A,Tj = 25°C -- 56 73 ns
dIF/dt=100A/us,
Qrr Reverse Recovery Charge VGS=0V -- 11.2 15 nC
Pulse width tp≤380µs,δ≤2%

Symbol Parameter Max. Units

RθJC Junction-to-Case 1 ℃/W
RθJA Junction-to-Ambient 60 ℃/W

Notes：
a1
：Repetitive rating; pulse width limited by maximum junction temperature
a2
：L=0.1mH, I D=65A, Start TJ =25℃

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Characteristics Curve：
Figure 1. Maximum Effective Thermal impedance，Junction-to-Ambient

Note：
ID=30A
250us Pulse Test

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Figure 6. Typical Transfer Characteristics Figure 7. Typical Body Diode Transfer Characteristics

Figure 8. Typical Drain-to-Source ON Figure 9. Drain-to-Source ON Resistance vs

Resistance vs Drain Current Junction Temperature

Figure 10. Typical Breakdown Voltage vs Figure 11. Typical Threshold Voltage vs Junction
Junction Temperature Temperature

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Figure 12.Maximum Forward Bias Figure 13. Typical Capacitance vs

Safe Operating Area Drain-to-Source Voltage

Figure 14. Typical Gate Charge vs

Gate-to-Source Voltage

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Test Circuit and Waveform

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Package Information：

Values(mm)
Items
MIN MAX
A 6.30 6.90
A1 0 0.13
B 5.70 6.30
C 2.10 2.50
D 0.30 0.60
E1 0.60 0.90
E2 0.70 1.00
F 0.30 0.60
G 0.70 1.20
L1 9.60 10.50
L2 2.70 3.10
H 0.60 1.00
M 5.10 5.50
N 2.09 2.49
R 0.3
T 1.40 1.60
Y 5.10 6.30
TO-252 Package
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The name and content of poisonous and harmful material in products

Hazardous Substance
Part’s Name
Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP

Limit ≤
≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1%
0.01%

Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Compound
Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○
○：Means the hazardous material is under the criterion of 2011/65/EU.
×：Means the hazardous material exceeds the criterion of 2011/65/EU.
Note
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup’s RoHS.

Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

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